HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
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1 Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (<.mm) Avaiabe in Tape and Ree Fast Switching Lead-Free Haogen-Free Description These N-Channe MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in battery and oad management. A thermay enhanced arge pad eadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smaest footprint. This package, dubbed the Micro3, is idea for appications where printed circuit board space is at a premium. The ow profie (<.mm) of the Micro3 aows it to fit easiy into extremey thin appication environments such as portabe eectronics and PCMCIA cards. The therma resistance and power dissipation are the best avaiabe. * 6 IRLML2502PbF HEXFET Power MOSFET V DSS = 20V ' Micro3 PD C R DS(on) = 0.045Ω Absoute Maximum Ratings Parameter Max. Units V DS Drain- Source Votage 20 V I T A = 25 C Continuous Drain Current, V 4.5V 4.2 I T A = 70 C Continuous Drain Current, V 4.5V 3.4 A I DM Pused Drain Current 33 P A = 25 C Power Dissipation.25 P A = 70 C Power Dissipation 0.8 W Linear Derating Factor 0.0 W/ C V GS Gate-to-Source Votage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Typ. Max. Units R θja Maximum Junction-to-Ambientƒ 75 0 C/W 05/3/
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 20 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient 0.0 V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance V GS = 4.5V, I D = 4.2A Ω V GS = 2.5V, I D = 3.6A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 5.8 S V DS = V, I D = 4.0A I DSS Drain-to-Source Leakage Current.0 V DS = 6V, V GS = 0V µa 25 V DS = 6V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -2V na Gate-to-Source Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge I D = 4.0A Q gs Gate-to-Source Charge nc V DS = V Q gd Gate-to-Drain ("Mier") Charge V GS = 5.0V t d(on) Turn-On Deay Time 7.5 V DD = V t r Rise Time I D =.0A ns t d(off) Turn-Off Deay Time 54 R G = 6Ω t f Fa Time 26 R D = Ω C iss Input Capacitance 740 V GS = 0V C oss Output Capacitance 90 pf V DS = 5V C rss Reverse Transfer Capacitance 66 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo.3 (Body Diode) showing the A I SM Pused Source Current integra reverse G 33 (Body Diode) p-n junction diode. V SD Diode Forward Votage.2 V T J = 25 C, I S =.3A, V GS = 0V t rr Reverse Recovery Time 6 24 ns T J = 25 C, I F =.3A Q rr Reverse Recovery Charge nc di/dt = 0A/µs D S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ Surface mounted on FR-4 board, t 5sec. Puse width 300µs; duty cyce 2%. 2
3 I D, Drain-to-Source Current (A) 0 VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V I D, Drain-to-Source Current (A) 0 VGS TOP 7.00V 5.00V 4.50V 3.50V 3.00V 2.70V 2.50V BOTTOM 2.25V 2.25V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, Drain-to-Source Votage (V) 20µs PULSE WIDTH T J = 50 C 0. 0 V DS, Drain-to-Source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, Drain-to-Source Current (A) 0 T J = 25 C T J = 50 C V DS= 5V 20µs PULSE WIDTH V GS, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 I D = 4.0A V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) 200 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED C = 00 rss Cgd Coss = Cds + Cgd 800 C iss C oss C rss 0 0 V DS, Drain-to-Source Votage (V) V GS, Gate-to-Source Votage (V) I = D 4.0A V DS = V Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Votage (V) I, Drain Current (A) D 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TA = 25 C TJ = 50 C Singe Puse V DS, Drain-to-Source Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4
5 4.0 I D, Drain Current (A) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 00 Therma Response (Z thja ) 0 D = PDM t SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA t, Rectanguar Puse Duration (sec) Fig. Maximum Effective Transient Therma Impedance, Junction-to-Ambient 5
6 R DS(on), Drain-to -Source Votage ( Ω ) R DS ( on ), Drain-to-Source On Resistance ( Ω ) IRLML2502PbF VGS = 2.5V Id = 4.0A VGS = 4.5V V GS, Gate -to -Source Votage ( V ) i D, Drain Current ( A ) Fig. On-Resistance Vs. Gate Votage Fig 2. On-Resistance Vs. Drain Current 6
7 Micro3 (SOT-23) Package Outine Dimensions are shown in miimeters (inches) 5 6 B 6 A 5 D 3 E E 0.5 [0.006] M CBA 2 e e H 4 L c A A2 C 0. [0.004] C A 3X b 0.20 [0.008] M C B A NOTES: Recommended Footprint DIMENSIONS SYMBOL MILLIMETERS INCHES MIN MAX MIN MAX A A A b c D E E e 0.95 BSC %6& e.90 BSC %6& L L 0.54 REF REF L BSC BSC L X L 7 Micro3 (SOT-23/TO-236AB) Part Marking Information.900. DIMENSIONING & TOLERANCING PER ANSI Y4.5M DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.0 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB. RWHV7KLVSDUWPDUNLQJLQIRUPDWLRQDSSOLHVWRGHYLFHVSURGXFHGDIWHU '$7(&2'( 3$5780%(5 &X:,5( +$/2*()5(( ; 3$5780%(5&2'(5()(5(&( $,5/0/ %,5/0/ &,5/0/ ',5/0/ (,5/0/ ),5/0/ *,5/0/ +,5/0/,,5/0/ -,5/0/.,5/0/ /,5/0/ 0,5/0/,5/0/ 3,5/0/ 5,5/0/ /27&2'( /($')5(( :,)35(&('('%</$67',*,72)&$/('$5<($5 :,)35(&('('%<$/(77(5 $ $ % % & & ' ' ( ) * + -. ; Note: For the most current drawing pease refer to IR website at: <($5 < <($5 < :25. :((. : $ % & ' ; < = :25. :((. :
8 Micro3 Tape & Ree Information Dimensions are shown in miimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (3) TAC Fax: (3) Visit us at for saes contact information. 05/20 8
HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.045Ω
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SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
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SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Surface Mount (IRFBC20S) Low-profie through-hoe (IRFBC20L) Avaiabe in Tape & Ree (IRFBC20S) Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching Fuy Avaanche Rated PRELIMINARY G PD - 9.1014
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
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PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationIRLR8103VPbF. Absolute Maximum Ratings. Thermal Resistance PD A DEVICE CHARACTERISTICS. IRLR8103V 7.9 mω Q G Q SW Q OSS.
PD - 95093A IRLR803VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 00%
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters
More information1 = D 2 = S 3 = S 4 = G
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationThermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambient 100 C/W
P - 95345 Generation V Technoogy Urtra Low On-Resistance ua N-Channe MOSFET Very Sma SOIC Package Low Profie (
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Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationIRFR3504ZPbF IRFU3504ZPbF
Features Advanced Process Technoogy Utra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avaanche Aowed up to Tjmax Lead-Free Description This HEXFET Power MOSFET utiizes the atest
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
PD - 95212A IRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 0%
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Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
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SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationV DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET
HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
More informationV DSS R DS(on) max Qg 30V GS = 10V 9.3nC
IRFH792PbF Appications High Frequency Point-of-Load Synchronous Buck Converter for Appications in Neworking & Computing Systems Optimized for Contro FET Appications HEXFET Power MOSFET V DSS R DS(on) max
More informationIRFR/U5505. HEXFET Power MOSFET V DSS = -55V. R DS(on) = 0.11Ω I D = -18A
Utra Low OnResistance PChanne Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technoogy Fast Switching Fuy Avaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
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Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
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