PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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1 Surface Mount (IRFBC20S) Low-profie through-hoe (IRFBC20L) Avaiabe in Tape & Ree (IRFBC20S) Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching Fuy Avaanche Rated PRELIMINARY G PD HEXFET Power MOSFET D S V DSS = 600V R DS(on) = 4.4Ω I D = 2.2A Description Third generation HEXFETs from internationa Rectifier provide the designer with the best combination of fast switching, ruggedized device design, ow on-resistance and cost-effectiveness. The D 2 Pak is a surface mount power package capabe of the accommodatingdie sizes up to HEX-4. It provides the highest power capabiity and the owest possibe onresistance in any existing surface mount package. The D 2 Pak is suitabe for high current appications because of its ow interna connection resistance and can dissipate up to 2.0W in a typica surface mount appication. The through-hoe version (IRFBC20L) is avaiabe for ow-profie appications. 2 D Pak TO-262 Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V 2.2 I T C = 100 C Continuous Drain Current, V 10V 1.4 A I DM Pused Drain Current 8.0 P A = 25 C Power Dissipation 3.1 W P C = 25 C Power Dissipation 50 W Linear Derating Factor 0.40 W/ C V GS Gate-to-Source Votage ± 20 V E AS Singe Puse Avaanche Energy 84 mj I AR Avaanche Current 2.2 A E AR Repetitive Avaanche Energy 5.0 mj dv/dt Peak Diode Recovery dv/dt ƒ 3.0 V/ns T J Operating Junction and -55 to T STG Storage Temperature Range C Sodering Temperature, for 10 seconds 300 (1.6mm from case ) Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 2.5 C/W R θja Junction-to-Ambient ( PCB Mounted,steady-state)** 40 7/22/97
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 600 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient 0.88 V/ C Reference to 25 C, I D =1mA R DS(on) Static Drain-to-Source On-Resistance 4.4 Ω V GS =10V, I D = 1.3A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 1.4 S V DS = 50V, I D = 1.3A I DSS Drain-to-Source Leakage Current 100 V DS = 600V, V GS = 0V µa 500 V DS = 480V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 100 V GS = 20V na Gate-to-Source Reverse Leakage -100 V GS = -20V Q g Tota Gate Charge 18 I D = 2.0A Q gs Gate-to-Source Charge 3.0 nc V DS = 360V Q gd Gate-to-Drain ("Mier") Charge 8.9 V GS = 10V, See Fig. 6 and 13 t d(on) Turn-On Deay Time 10 V DD = 300V t r Rise Time 23 I D = 2.0A ns t d(off) Turn-Off Deay Time 30 R G = 18Ω t f Fa Time 25 R D = 150Ω, See Fig. 10 L S Interna Source Inductance 7.5 nh Between ead, and center of die contact C iss Input Capacitance 350 V GS = 0V C oss Output Capacitance 48 pf V DS = 25V C rss Reverse Transfer Capacitance 8.6 ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo (Body Diode) 2.2 showing the A I SM Pused Source Current integra reverse G 8.0 (Body Diode) p-n junction diode. S V SD Diode Forward Votage 1.6 V T J = 25 C, I S = 2.2A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 2.0A Q rr Reverse Recovery Charge µc di/dt = 100A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S +L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. 11 ) V DD =50V, starting T J = 25 C, L =31mH R G = 25Ω, I AS = 2.2A. (See Figure 12) ƒ I SD 2.2A, di/dt 40A/µs, V DD V (BR)DSS, T J 150 C Puse width 300µs; duty cyce 2%. Uses IRFBC20 data and test conditions ** When mounted on 1" square PCB (FR-4 or G-10 Materia ). For recommended footprint and sodering techniques refer to appication note #AN-994.
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7 Peak Diode Recovery dv/dt Test Circuit D.U.T + ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. - Device Under Test + - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =10V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-Appied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 14. For N-Channe HEXFETS
8 D 2 Pak Package Outine 1.40 (.055) MAX (.415) (.405) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.400) RE F (.255) 6.18 (.243) 1.78 (.070) 1.27 (.050) (.610) (.580) 2.79 (.110) 2.29 (.090) 5.28 (.208) 4.78 (.188) 2.61 (.103) 2.32 (.091) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 3X 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) 8.89 (.350) RE F (.010) M B A M MINIMUM RECOMMENDED FOOTPRINT (.450) NOTES: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS 1 - G ATE 2 - DRA IN 3 - S OU RC E 8.89 (.350) 3.81 (.150) (.700) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking Information D 2 Pak IN TER NATION AL RECTIFIER LOGO ASSEMBLY LOT CODE F530S B 1M A PART NUMBER DATE CODE (YYWW ) YY = YEAR WW = WEEK
9 Package Outine TO-262 Outine Part Marking Information TO-262
10 Tape & Ree Information D 2 Pak TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) (.429) (.421) (.457) (.449) (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) M AX (2.362) MIN. NOTES : 1. CO MFOR MS TO EIA CO NTRO LLING DIMENSION: MILLIMETER. 3. DIMENSIO N HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MA X. 4 WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (310) EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Te: (905) IR GERMANY: Saaburgstrasse 157, Bad Homburg Te: IR ITALY: Via Liguria 49, Borgaro, Torino Te: IR FAR EAST: K&H Bdg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Te: IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Buiding, Singapore 0316 Te: Data and specifications subject to change without notice. 7/97
IRFL9110 V DSS = -100V. R DS(on) = 1.2Ω I D = -1.1A
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More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
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Applications l High frequency DC-DC converters SMPS MOSFET PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.082Ω 31A Benefits l Low Gate-to-Drain Charge to
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationD-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
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l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationFB180SA10. HEXFET Power MOSFET V DSS = 100V. R DS(on) = W I D = 180A
PD 965C FB80SA0 Fuy Isoated Package Easy to Use and Parae Very Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Drain to Case Capacitance Low Interna Inductance G D
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94114 IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 42.6A Benefits l Low Gate-to-Drain Charge
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Logic-Leve Gate Drive dvanced Process Technoogy Isoated Package High Votage Isoation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature PChanne Fast Switching Fuy vaanche Rated LeadFree Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
More informationIRF7555. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.055Ω
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (
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l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio
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HEXFET Power MOSFET PD - 9.235 IRLI620G Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive R DS(ON) Specified at V GS = 4V & 5V Fast Switching Ease
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HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD 9.278B PRELIMINRY IRFN dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated HEXFET Power MOSFET V DSS = 55V R DS(on) = 0.02Ω I D = 72 Description
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
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SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
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HEXFET Power MOSFET dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD - 9.35 IRF530N V DSS = 00V R DS(on) = 0.Ω Description Fifth
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PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
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dvanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD 9.383 IRFP064N HEXFET Power MOSFET V DSS = 55V R DS(on)
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
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Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
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