FB180SA10. HEXFET Power MOSFET V DSS = 100V. R DS(on) = W I D = 180A

Transcription

1 PD 965C FB80SA0 Fuy Isoated Package Easy to Use and Parae Very Low OnResistance Dynamic dv/dt Rating Fuy Avaanche Rated Simpe Drive Requirements Low Drain to Case Capacitance Low Interna Inductance G D S HEXFET Power MOSFET V DSS = 00V R DS(on) = W I D = 80A Description Fifth Generation, high current density HEXFETS are paraed into a compact, high power modue providing the best combination of switching, ruggedized design, very ow ON resistance and cost effectiveness. The isoated SOT227 package is preferred for a commercia industria appications at power dissipation eves to approximatey 500 watts. The ow therma resistance and easy connection to the SOT 227 package contribute to its universa acceptance throughout the industry. SOT227 Absoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 0V 80 I T C = 00 C Continuous Drain Current, V 0V 20 A I DM Pused Drain Current 720 P C = 25 C Power Dissipation 480 W Linear Derating Factor 2.7 W/ C V GS GatetoSource Votage ± 20 V E AS Singe Puse Avaanche Energy 700 mj I AR Avaanche Current 80 A E AR Repetitive Avaanche Energy 48 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.7 V/ns T J Operating Junction and 55 to 50 C T STG Storage Temperature Range V ISO Insuation Withstand Votage (ACRMS) 2.5 kv Mounting torque, M4 srew.3 N m Therma Resistance Parameter Typ. Max. Units R qjc JunctiontoCase 0.26 R qcs CasetoSink, Fat, Greased Surface 0.05 C/W 2//99

2 FB80SA0 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Votage 00 V V GS = 0V, I D = 250µA DV (BR)DSS /DT J Breakdown Votage Temp. Coefficient V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance W V GS = 0V, I D = 08A V GS(th) Gate Threshod Votage V V DS = V GS, I D = 250µA g fs Forward Transconductance 93 S V DS = 25V, I D = 08A I DSS DraintoSource Leakage Current 50 V µa DS = 00V, V GS = 0V 500 V DS = 80V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 200 V GS = 20V na GatetoSource Reverse Leakage 200 V GS = 20V Q g Tota Gate Charge I D = 80A Q gs GatetoSource Charge nc V DS = 80V Q gd GatetoDrain ("Mier") Charge 0 65 V GS = 0.0V, See Fig. 6 and 3 t d(on) TurnOn Deay Time 45 V DD = 50V t r Rise Time 35 I D = 80A ns t d(off) TurnOff Deay Time 8 R G = 2.0W (Interna) t f Fa Time 335 R D = 0.27W, See Fig. 0 L s Interna Source Inductance 5.0 nh Between ead, and center of die contact C iss Input Capacitance 0700 V GS = 0V C oss Output Capacitance 2800 pf V DS = 25V C rss Reverse Transfer Capacitance 300 ƒ =.0MHz, See Fig. 5 SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 80 (Body Diode) showing the A I SM Pused Source Current integra reverse 720 (Body Diode) pn junction diode. V SD Diode Forward Votage.3 V T J = 25 C, I S = 80A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 80A Q rr Reverse Recovery Charge µc di/dt = 00A/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L =43µH R G = 25W, I AS = 80A. (See Figure 2) ƒ I SD 80A, di/dt 83A/µs, V DD V (BR)DSS, T J 50 C Puse width 300µs; duty cyce 2%. 2

3 FB80SA0 I D, DraintoSource Current (A) VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C V DS, DraintoSource Votage (V) 20µs PULSE WIDTH T J = 50 C V DS, DraintoSource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, DraintoSource Current (A) T J = 50 C T J = 25 C V DS = 25V 20µs PULSE WIDTH V GS, GatetoSource Votage (V) R DS(on), DraintoSource On Resistance (Normaized) 2.5 I D = 80A V GS = 0V T J, Junction Temperature( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature 3

4 FB80SA0 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds SHORTED Crss = Cgd Coss = Cds Cgd 5000 C iss 0000 C oss 5000 C rss V DS, DraintoSource Votage (V) V GS, GatetoSource Votage (V) I = D 80 A V DS = 80V V DS = 50V V DS = 20V FOR TEST CIRCUIT SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. DraintoSource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C V GS = 0 V V SD,SourcetoDrain Votage (V) 0000 I D, Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 0us 00us ms 0ms TC = 25 C TJ = 50 C Singe Puse V DS, DraintoSource Votage (V) Fig 7. Typica SourceDrain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4

5 FB80SA0 200 V DS R D I D, Drain Current (A) Fig 0a. Switching Time Test Circuit V DS 90% R G V GS 0V Puse Width µs Duty Factor 0. % D.U.T. V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms Therma Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase 5

6 FB80SA0 R G V DS 20V tp I AS Fig 2a. Uncamped Inductive Test Circuit tp L D.U.T 0.0Ω 5V DRIVER V (BR)DSS V DD A E AS, Singe Puse Avaanche Energy (mj) I D TOP 7A 00A BOTTOM 60A Starting T, Junction Temperature( J C) Fig 2c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 0 V Q GS Q GD D.U.T. V DS V G V GS 3mA Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 FB80SA0 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReAppied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For NChanne HEXFETS 7

8 FB80SA0 SOT227 Package Detais 4.40 (.73 ) 4.20 (.65 ) 2.50 (.492 ) 7.50 (.295 ) 2.0 (.082 ).90 (.075 ) (.508 ) (.488 ) (.02 ) (.992 ) B A (.89 ) (.73 ) 8.0 (.39 ) 4X 7.70 (.303 ) (.246 ) 5.00 (.590 ) CHAM FER 2.00 (.079 ) X 457 R FULL 0.25 (.00 ) M C A M B M 2.0 (.082 ).90 (.075 ) C 0.2 (.005 ) 4 E LEAD ASSIGMENTS C E G IGBT A K2 K A2 HEXFRED S D S G HEXFET (.484 ).80 (.464 ) Tube QUANTITY PER TUBE IS 0 M4 SREW AND W ASHE R INCLUDED WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (30) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CANADA: 5 Lincon Court, Brampton, Ontario L6T3Z2, Te: (905) IR GERMANY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITALY: Via Liguria 49, 007 Borgaro, Torino Te: IR FAR EAST: K&H Bdg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Te: IR SOUTHEAST ASIA: Kim Seng Promenade, Great Word City West Tower, 3, Singapore Te: IR TAIWAN:6 F. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 0673, Taiwan Te: Data and specifications subject to change without notice. 2/99 8