MOSFET MODELING & BSIM3 USER S GUIDE

Transcription

1 MOSFET MODELING & BSIM3 USER S GUIDE

2 MOSFET MODELING & BSIM3 USER S GUIDE by Yuhua Cheng Conexant Systems, Inc. and Chenming Hu University of California, Berkeley KLUWER ACADEMIC PUBLISHERS NEW YORK, BOSTON, DORDRECHT, LONDON, MOSCOW

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4 Contents Contents... v Preface... xiii Chapter 1 Introduction Compact MOSFET Modeling for Circuit Simulation The Trends of Compact MOSFET Modeling Modeling new physical effects High frequency (HF) analog compact models Simulation robustness and efficiency Model standardization...8 References...8 Chapter 2 Significant Physical Effects In Modern MOSFETs MOSFET Classification and Operation Strong inversion region (Vgs>Vth) Weak and moderate inversion or the subthreshold region Effects Impacting the Threshold Voltage Non-uniform doping effects Normal short channel effects...23

5 vi MOSFET Modeling & BSIM3 User s Guide Reverse short channel effects Normal narrow-width effects Reverse narrow-width effects Body bias effect and bulk charge effect Channel Charge Theory Accumulation Depletion Inversion Carrier Mobility Velocity Saturation Channel Length Modulation Substrate Current Due to Impact Ionization Polysilicon Gate Depletion Velocity Overshoot Effects Self-heating Effect Inversion Layer Quantization Effects...55 References Chapter 3 Threshold Voltage Model Threshold Voltage Model for Long Channel Devices Threshold Voltage Model with Short Channel Effects Charge sharing model Quasi 2-D models for drain induced barrier lowering effect Narrow Width Effect Model Threshold Voltage Model in BSIM3v Modeling of the vertical non-uniform doping effects Modeling of the RSCE due to lateral non-uniform channel doping Modeling of the short channel effect due to drain induced barrier lowering Modeling of the narrow width effects Complete Vth model in BSIM3v Helpful Hints References Chapter 4 I-V Model Essential Equations Describing the I-V Characteristics...105

6 CONTENTS vii 4.2 Channel Charge Density Model Channel charge model in the strong inversion region Channel charge model in the subthreshold region Continuous channel charge model of BSIM3v Continuous channel charge model with the effect of Vds Mobility Model Piece-wise mobility models Mobility models in BSIM3v I-V Model in the Strong Inversion Region I-V model in the linear (triode) region Drain voltage at current saturation, Vdsat Current and output resistance in the saturation region Subthreshold I-V Model Single Equation I-V model of BSIM3v Polysilicon Gate Depletion Effect Helpful Hints References Chapter 5 Capacitance Model Capacitance Components in a MOSFET Intrinsic Capacitance Model Meyer model Shortcomings of the Meyer model Charge-based capacitance model Extrinsic Capacitance Model Capacitance Model of BSIM3v Long channel capacitance model (capmod=0) Short channel capacitance (capmod=1) Single-equation short channel capacitance model (capmod=2) Short channel capacitance model with quantization effect (capmod=3) Channel Length/Width in Capacitance Model Helpful Hints References Chapter 6 Substrate Current Model Substrate Current Generation...211

7 viii MOSFET Modeling & BSIM3 User s Guide 6.2 Substrate Current Model in BSIM3v Helpful Hints References Chapter 7 Noise Model The Physical Mechanisms of Flicker (1/f) Noise The Physical Mechanism of Thermal Noise Flicker Noise Models in BSIM3v SPICE2 flicker noise model (noimod=1) Unified flicker noise model (noimod=2) Thermal Noise Models in BSIM3v Modified SPICE2 thermal noise model (noimod=1) BSIM3 thermal noise model (noimod=2) Helpful Hints References Chapter 8 Source/Drain Parasitics Model Parasitic Components in a MOSFET Models of Parasitic Components in BSIM3v Source and drain series resistances DC model of the source/drain diodes Capacitance model of the source/bulk and drain/bulk diodes Helpful Hints References Chapter 9 Temperature Dependence Model Temperature Effects in a MOSFET Temperature Dependence Models in BSIM3v Comparison of the Temperature-Effect Models with Measured Data Helpful Hints References Chapter 10 Non-quasi Static (NQS) Model The Necessity of Modeling NQS Effects

8 CONTENTS ix 10.2 The NQS Model in BSIM3v Physics basis and model derivation The BSIM3 NQS model Test Results of the NQS Model Helpful Hints References Chapter 11 BSIM3v3 Model Implementation General Structure of BSIM3v3 Model Implementation Robustness Consideration in the Implementation of BSIM3v Testing of Model Implementation Model Selectors of BSIM3v Helpful Hints References Chapter 12 Model Testing Requirements for a MOSFET Model in Circuit Simulation Benchmark Tests Benchmark Test Results Helpful Hints References Chapter 13 Model Parameter Extraction Overview of Model Parameter Extraction Parameter Extraction for BSIM3v Optimization and extraction strategy Extraction routines Binning Methodology Recommended Value Range of the Model Parameters Automated Parameter Extraction Tool References

9 x MOSFET Modeling & BSIM3 User s Guide Chapter 14 RF and Other Compact Model Applications RF Modeling Modeling of the gate resistance Modeling the substrate network A RF MOSFET model based on BSIM3v3 for GHz communication IC s Statistical Modeling Technology Extrapolation and Prediction Using BSIM3 Model References Appendix A BSIM3v3 Parameter Table A.1 Model control parameters A.2 Process parameters A.3 Parameters for Vth model A.4 Parameters for I-V model A.5 Parameters for capacitance model A. 6 Parameters for effective channel length/width in I-V model A. 7 Parameters for effective channel length/width in C-V model A.8 Parameters for substrate current model A.9 Parameters for noise models A. 10 Parameters for models of parasitic components A.11 Parameters for models of temperature effects A.12 Parameters for NQS model Appendix B BSIM3v3 Model Equations B.1 Vth equations B.2 Effective Vgs-Vth B.3 Mobility B.4 Drain saturation voltage B.5 Effective Vds B.6 Drain current expression B.7 Substrate current B.8 Polysilicon depletion effect B.9 Effective channel length and width B.10 Drain/Source resistance B.11 Capacitance model equations B.12 Noise model equations B.13 DC model of the source/drain diodes...443

10 CONTENTS xi B.14 Capacitance model of the source/bulk and drain/bulk diodes B.15 Temperature effects B.16 NQS model equations B.17 A note on the poly-gate depletion effect Appendix C Enhancements and Changes in BSIM3v3.1 versus BSIM3v C. 1 Enhancements C.2 Detailed changes Appendix D Enhancements and Changes in BSIM3v3.2 versus BSIM3v D.1 Enhancements D.2 Detailed changes Index

11 Preface At the dawn of its fifth decade, the semiconductor industry continues to grow at an amazing pace. High-speed and low-power integrated circuits (IC) are used in an ever expanding plethora of applications, permeating every aspect of human life. A critical part of this technology is high-quality circuit design. Circuit simulation is an essential tool in designing integrated circuits. The accuracy of circuit simulation depends on the accuracy of the model of the transistors. Reduction in transistor size continually complicates the device physics and makes device modeling more challenging and sophisticated. Recently, BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) was selected as the first MOSFET model for standardization by the Compact Model Council, consisting of many leading companies in the semiconductor industry such as Advanced Micro Devices, Analog Devices, Avant!, BTA Technology, Cadence design Systems, Compaq, Conexant Systems (formerly Rockwell Semicondutor Systems), Hewlett Packard, Hitachi, IBM, Intel, Lucent Technologies, Mentor Graphics, Motorola, NEC, Philips, Siemens, Texas Instruments, and TSMC. This is a historic milestone in device modeling for circuit design. As two of the principal developers of BSIM3v3, the authors have received hundreds of comments and questions from device engineers and circuit designers. They revealed to us the areas and the points that require explana-

12 xiv MOSFET Modeling & BSIM3 User's Guide tions and clarifications. We realized the need for a reference book on BSIM3 that takes the readers from device physics through model equations to applications in circuit design. This book explains the important physical effects in MOSFETs, and presents the derivations of the model expressions. The purpose is to help the model users understand the concepts and physical meanings of the model equations and parameters. The book emphasizes the BSIM3 compact model for use in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitic diode model, substrate current model, temperature effect model and non-quasi-static model. The book also addresses model implementation and new applications such as technology prediction using BSIM3. As a special feature of this book, many helpful hints based on our personal knowledge and experience are presented at the end of chapters 3 through 12 to help readers understand and use the models correctly and effectively. This book is a summary of the contributions from many former and current colleagues and students. One of us (CH) had the distinct pleasure of collaborating with Prof. Ping K. Ko, Hong Kong University of Science and Technology (formerly with University of California, Berkeley) on the development of BSIM1, BSIM2, and BSIM3, and MOSFET physics research over a period of 15 years. His contributions to BSIM3 are countless. Dr. Jianhui Huang is one of the principal developers of the first version of BSIM3. It is a pleasure to acknowledge the following contributors to the development of BSIM3v3: Mansun Chan, Zhihong Liu, Minchie Jeng, Kelvin Hui, Weidong Liu, Xiaodong Jin, Jeff Ou, Kai Chen, James Chen, Ya-chin King, and Michael Orshansky. We would like to acknowledge many colleagues in the Compact Model Council, Britt Brooks, Bhaskar Gadepally, Keith Green, Tom Vrotsos, Colin McAndrew, David Newmark, Marc McSwain, Pratheep Balasingam, Bob Daniel, Mishel Matloubian, Sally Liu, Shiuh-Wuu Lee, Chris Lyons, Joseph Watts and many more for their valuable inputs and comments that have been incorporated in BSIM3 and, indirectly, into this book. We thank Prof. Michael Shur of Rensselaer Polytechnic Institute, Prof. Tor A. Fjeldly of Norwegian University of Science and Technology, and Dr. Mishel Matloubian of Conexant Systems, for reviewing the manuscript and giving helpful comments. We also thank Dennis Sylvester for technical editing, Jeff

13 Preface xv Ou, Weidong Liu, Xiaodong Jin, Sandeep D souza, Michael Orshansky, Mark Cao, and Pin Su for reading and commenting on individual chapters. Finally we would like to give our thanks to our families for their patience, support and help that made this book possible. Yuhua Cheng Conexant Systems, Inc. Newport Beach, CA Chenming Hu University of California Berkeley, CA