8. Characteristics of Field Effect Transistor (MOSFET)

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1 1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors (FETs) and to compare them with the theoretically predicted ones Principles The metal oxide semiconductor field-effect transistor (MOSFET) is a transistor used for amplifying or switching of electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce (or suppress) a conducting channel between the two other contacts called source and drain. The channel can be of n-type or p-type, and the corresponding transistor is accordingly called an nmosfet or a pmosfet. Fig. 1 shows a diagram of an nmos device before and after channel formation. Fig. 1. (a) nmosfet before channel formation; (b) nmosfet structure after channel formation.

2 2 Fig. 2. Symbols commonly used for MOSFETs. Four electrodes are Source (S), Drain (D), Gate (G) and Body/Substrate (B). The characteristics of an nmos transistor can be explained as follows. As the voltage on the gate electrode increases, electrons are attracted from p-type bulk body to the surface between source and drain. At a particular voltage level, the electron density at the surface exceeds the hole density. At this voltage, a layer under the surface experiences inversion from the p-type conductivity of the original substrate to n-type as shown in Fig. 1(b). This inversion region is an extremely shallow layer, existing as a charge sheet directly below the gate. In the MOS capacitor, the high density of electrons in the inversion layer is supplied by the electron hole generation process within the depletion layer. The positive charge on the gate is balanced by the combination of negative charge in the inversion layer plus negative ionic acceptor charge in the depletion layer. The voltage, at which the surface inversion layer just forms, plays an extremely important role in field-effect transistors and is called the threshold voltage V th. The region of output characteristics where V GS <V tn and no current flows between source and drain is called the cut-off region. If the electric field between source and drain (the field along channel) does not exceed the field in the oxide layer, then the inversion channel remains almost uniform along its length. This state, which is known as non-saturated, linear, or ohmic bias state, transistor works as an ohmic resistor. The drain and source are effectively short-circuited. This happens when V GS > V DS + V th for nmos transistor and V GS < V DS +V th for pmos transistor. Drain current I D is linearly related to drain-source voltage V DS over small intervals in the linear bias state. If the nmos drain voltage increases beyond the limit, so that V GS < V DS + V th, then the electric field between gate and source becomes stronger than the field between gate and drain. This creates an asymmetry of the channel carrier inversion distribution. With the increase of V DS while the gate voltage remains the same, V GD can go below the threshold voltage in the drain region. There can be no carrier inversion close to the drain. Thus the inverted portion of the channel retracts from the drain (Fig. 3). At this point, the pinched-off portion of the channel forms a depletion region with a high electric field. The n-drain and p-bulk form a p-n junction. When this happens, the inversion channel is said to be pinched-off and the device is in the saturation region.

3 3 Fig. 3. Channel pinch-off for nmos (a) and pmos (b) transistors. Characteristics of MOSFET The transfer characteristic (input characteristic) relates to the drain current I D response to the input gate-source driving voltage V GS. Since the gate terminal is electrically isolated from the remaining terminals (drain, source, and bulk), the gate current is essentially zero, so that gate current is not part of device characteristics. The transfer characteristic curve can locate the gate voltage at which the transistor passes current and leaves the OFF-state. This is the device threshold voltage V th. Fig. 4 shows schematically input characteristic for an nmos transistor. Fig. 4. Schematics of the measurements of input characteristic of MOSFET and example of input characteristic. Two main parameters of the input characteristic are threshold voltage V th and transconductance g m. Similarly, in field effect transistors, and MOSFETs in particular, transconductance g m, is the change in the drain current divided by the small change in the gate/source voltage with a constant

4 4 drain/source voltage. The transconductance is a strong function of gate voltage and drain current. However, an effective value of transconductance can be expressed as:, where I D is the DC drain current at the bias point, and V eff is the effective voltage, which is the difference between the bias point gate source voltage and the threshold voltage (V eff = V GS - V th ). Dependence of transconductance on drain current and gate-source voltage is shown in Fig. 5. It reaches maximum for moderate currents and voltages. Typical values of g m for a smallsignal field effect transistor are 1 to 30 millisiemens (ms). Fig. 5. Dependence of transconductance on drain current and gate-source voltage. Output characteristic relates to dependence of drain current I D versus source-drain voltage V SD (Fig. 6). At low V SD voltages, I D increases linearly (ohmic regime). When V SD exceeds pinch-off voltage, current I D becomes essentially independ on the drain voltage (saturation regime). However the magnitude of I D remains strongly dependent on gate-source voltage V GS.

5 5 Fig. 6. Typical output characteristic of MOSFET Experimental Equipment DC power supply 10Ω, 10kΩ resistor 2N7000 n-channel MOSFET ZVP3306 p-channel MOSFET MIC94030 p-channel MOSFET LabView measurement board Connecting wires

6 Procedure Fig. 7. n-channel MOSFET test setup Make 3 graphs: 1. Id vs Vds 2. Id vs Vgs 3. Gm vs Vgs (Gm = Id/Vgs) Start with Input characteristics. Set Vdd = 5.0V and quickly sweep Vgs up to 5.0V (quickly so the transistor does not heat up and burn). Using the graph of Id vs Vgs, find the Threshold Voltage when Id=1.0mA. This value is between 0.8 and 3.0 according to datasheet. Now starting with Vdd=5.0V, repeat the Vgs sweep up to 5.0V (quickly). Lower Vdd in steps of 1.0V and repeat, so that all curves are shown on the graph of Id vs Vgs, as well as the graph of Gm vs Vgs. For output characteristics, start with Vgs = 0V and sweep Vdd up to 5.0V. Next, set Vgs = Vth (as found in part 1), and sweep Vdd again. Finally, increase Vgs in steps of 0.25V from 2.0V up to 4.0V maximum, and obtain all curves on the Id vs Vds graph for each Vgs used. Determine the Pinch-off Voltage from the graph for each value of Vgs used, and what the cutoff voltage is for this n-channel MOSFET.

7 7 For the P-Channel MOSFET (ZVP3306), simply replace the 2N7000, and reverse the polarity on the power supply channels, and repeat similar procedure below Fig. 8 P-Channel MOSFET test setup Start with Input characteristics. Set Vdd = -3.0V and quickly sweep Vgs up to -5.0V (quickly so the transistor does not heat up and burn). Using the graph of Id vs Vgs, find the Threshold Voltage when Id=1.0mA. This value is between -1.5 and -3.5 according to datasheet. Now starting with Vdd= -3.0V, repeat the Vgs sweep. Lower Vdd in steps of 0.5V and repeat, so that all curves are shown on the graph of Id vs Vgs, as well as the graph of Gm vs Vgs. For output characteristics, start with Vgs = 0V and sweep Vdd up to -5.0V. Next, set Vgs = Vth (as found in part 3), and sweep Vdd again. Finally, increase Vgs in steps of 0.5V from -3.0V up to -5.0V maximum, and obtain all curves on the Id vs Vds graph for each value of Vgs used. Determine the Pinch-off Voltage from the graph for each value of Vgs used, and what the cutoff voltage is for this p-channel MOSFET.

8 8 Fig pin P-Channel MOSFET test setup To test Body Effect, set up circuit as shown in Fig. 10. When Vdd = 5.0V, there is no potential difference between B and S, so Vbs = 0. Start with this setting, and sweep Vgs up to 2.0V. On the graph of Id vs Vgs, you can identify the threshold voltage Vth when Id = 1mA. Now increase Vdd slightly to 5.2V (making Vbs = -0.2V), and repeat the sweep. You should see the curve shifted relative to the original curve. Increase again to 5.4V, 5.6V, up to 5.8V, and obtain all curves. At a certain point the current will increase when Vgs = 0.0V. At this point you can stop increasing Vdd. Now decrease Vdd to 4.8V (making Vbs = +0.2V) and sweep Vgs up to 2.0V. Continue to decrease Vdd in steps of 0.2V down to 4.0V, and obtain all curves in the graph. You can fill out the table below with data from all sweeps. Vdd Vbs Vth

9 Calculations and Discussion Input characteristics - Measure input characteristics of nmosfet and pmosfet. - Determine threshold voltages for both transistors. - Calculate transconductance for different gate voltages and different rain currents. - Estimate maximum transconductance for both transistors Output characteristics - Measure output characteristics of both transistors. - Estimate pinch-off drain voltages for different gate voltages. - Estimate resistance of channel in ohmic and saturation regimes for both transistors. - calculate power dissipated by transistors at different gate and drain voltages Questions What are the main parameters determining the threshold voltage of MOSFET? Why differential resistance of MOSFET in saturation regime is not infinitely large? Why transconductance of MOSFET drops down strongly at high drain currents?

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