Three Terminal Devices
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1 Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering only two ports i.e.: V 3 = V 2 - V 1 Figure 5.1 A three terminal device can be described completely by considering only two of its three ports - terminal characteristics of ports usually interdependent. One input and the other output.
2 Field Effect Transistor - real FET has three terminal G = gate S = source D = drain G - S => input port D - S => output port
3 Field Effect Transistor (con t) V GS controls D - S terminal characteristics and gives family of curves. Only one curve is valid at any given instant. Figure 5.4 Family of output port v-i characteristics for a typical three-terminal FET
4 Simple Bias Circuit Figure 5.5 Output port of three terminal FET connected to a simple Thevenin circuit; input port connected to voltage source v 1 - as V 1 is changed so is V GS - V - I characteristics of output port change from one curve to another
5 Simple Biased Circuit (con t) Figure 5.6 Load line of circuit of Fig. 5.5 superimosed on the FET output port v-i characteristic
6 Figure 5.7 Several operating points obtained graphically and entered into table 5.1
7 Figure 5.8 Values found in Fig. 5.7 plotted as an input-output transfer charcteristic - V TR => turn on voltage - basic switch function
8 FET - family of devices - metal-oxide semiconductor field effect transistor (MOSFET) - metal semiconductor field effect transistor (MESFET) - junction field effect transistor (JFET) - all devices have similar output port V-I characteristics - all devices operate on fundamental physical mechanism called electric field effect - two types of devices n-channel p-channel same operation with opposite polarities for voltages and currents - we will focus on n-channel devices
9 Physical Structure of MOSFET Figure 5.9 Schematic cross-section of n-channel MOSFET a) side view; b) top view. The length L and the width W of the gate region define the device geometry. The insulating oxide layer between the gate and substrate has thickness t OX
10 Physical Structure of a MOSFET (con t)
11 Physical Structure of MOSFET (con t) - highly doped n+ implant forms drain and source in p-type substrate - gate consists of metallic electrode that covers an insulating oxide layer over substrate - extremely high gate input impedance - gate electrode width and length determine active channel - active channel along with oxide thickness help determine V-I characteristics
12 - if small voltage applied between drain and source, with no voltage applied to gate, MOSFET behaves like two PN junctions connected back to back - one diode is reversed biased so that no current flows. It does however form a depletion region - if voltage is applied between gate and source, MOSFET can conduct current - voltage applied to gate forms electric field between gate and substrate - negative acceptor ions are exposed as mobile holes are push away
13 Figure 5.10 The electric field in the oxide layer originates on the positive gate and terminates in the negative charge at the substrate surface. When the field becomes strong enough, an inversion layer of mobile free electrons forms beneath the substrate surface.
14 - as V GS is increased, reach point where there are a maximum number of exposed acceptor ion cores near the surface - if gate voltage is further increased, surface charge must be augmented by mobile electrons that originate from remote areas or n+ region - forms thin layer of electrons called inversion layer which behaves like n-type region - V GS voltage when inversion layer formed is called threshold voltage V TR of V T - inversion layer isolated by bound ion cores - inversion layer bridges D - S to form a conduction path - density of electrons in inversion layer is dependent on V GS. Initially uniform layer which results in triode region operation
15 Constant Current - as V DS becomes comparable to V GS, the channel resistance becomes non-linear - voltage at any point along substrate will lie between voltage at drain and source - magnitude in electric field equal to difference in gate and substrate voltage - magnitude is maximum at source and decreases as you move towards drain - if V DS > V GS - V TR inversion layer cannot form at drain. Voltage across inversion channel remains constant
16 Constant Current (con t) Figure 5.12 MOSFET with v DS > v GS - V TR. The inversion layer stops just to the left of the drain-to-substrate depletion region at point X
17 - since channel voltage remains constant for V DS > V GS - V TR the current I D becomes constant Figure 5.14 Voltage-current characteristics of a typical enhancement-mode MOSFET with K = 0.5mA/V 2 and V TR = 2V
18 Constant Current I D = k(v GS - V TR ) 2 V DS > V GS - V TR Triode (Resistive) V GS > V TR I D = k[2(v GS - V TR )V DS - V DS2 ] 0 < V DS < (V GS - V TR ) Cut-off I D = 0 V GS > V TR V GS < V TR
19 k = conductance parameter k = W L µ = electron mobility ε = dielectric permittivity E µ ε E OX 2 => typical values: 0.05 to 50 ma / V t OX 2 W = width of channel t = oxide thickness L = length of channel OX OX Figure 5.15 Voltage-current characteristic of MOSFET gate-to-source input port - act as open circuits (i.e.: no currents) - at high frequency gate capacitance takes effect and no longer open circuit
20 Depletion Mode MOSFET - negative threshold voltage - modify enhancement mode device by implanting layer of donor ions into substrate under gate - donor ions form conduction channel even when V GS = 0 - require negative V GS to shut devices off Figure 5.16 Circuit symbol and v-i characteristic of typical depletion mode MOSFET with K = 0.5mA/V 2 V TR = -4V - same equations as enhancements mode device describe behavior
21 Junction Field Effect Transistor - V-I characteristics similar to those of MOSFET - n-channel JFET made by diffusing p-type region into n-type channel - source and drain made by connecting to either side of channel with ohmic contact - gate connected to p-type region - acts like resistance between drain and source and PN junction between gate and channel - normal operation reverse-bias gate -to- channel. As voltage increases it widens depletion region
22 - increasing depletion region reduces cross-section of channel - drain and source function as variable resistor which is controlled by gate-channel voltage - if V GS large enough channel pinch-off. This pinch-off voltage has same function as threshold voltage (V P is defined as V TR ) - for small V DS JFET operates the same as triode region of MOSFET Figure 5.18 An n-channel JFET with small v DS and v GS = V TR (pinch-off condition)
23 JFET Constant Current - for large V DS channel resistance non-linear and JFET departs from resistive behavior - if V DS large enough (> V GS - V P ) channel current becomes constant - width of depletion region determined gate voltage and local channel voltage - if V DS large enough pinch-off region forms at drain. This region still allows current to flow through small channel Figure 5.19 An n-channel JFET in the constant-current region with vds > (vgs - VTR). The channel is pinched off near the drain end
24 JFET Transfer Function Figure 5.20 Voltage-current characteristics of a typical n-channel JFET with parameters K = 0.5mA/V 2 ; V TR = V P = -4V; I DSS = K P 2 = 8mA; a) circuit symbol; b) input port; c) output port - JFET has same current equations as MOSFET - sometimes alternate set used with V P V and TR I V DSS 2 P k
25 FET Transconductance Curve - transfer function with I D vs. V GS (assume V DS = constant) Figure 5.21 Transconductance curve of enhancement-mode MOSFET of Fig taken at the value v DS = 8V (K = 0.5mA/V 2 ; V TR = 2V)
26 FET Transconductance Curve (con t) Figure 5.22 Transconductance curve of depletion-mode MOSFET of Fig taken at the value v DS = 8V (K = 0.5 ma/v 2 ; V TR = -4V)
27 FET Transconductance Curve (con t) - V DS = 8V => constant current region I D = k(v GS - V TR ) 2 P-Channel FETs Figure 5.24 Several p-channel field-effect transistors
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