Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE

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1 Electronic Circuits Junction Field-effect Transistors Dr. Manar Mohaisen Office: F208 Department of EECE

2 Review of the Precedent Lecture Explain the Operation Class A Power Amplifier Explain the Operation of Class B and AB Amplifiers Explain The Operation of the Class C Amplifiers

3 Class Objectives Introduce the Junction Field-effect Transistor (JFET) Structure, characteristics and parameters, and biasing Introduce the Metal Oxide Semiconductor FET (MOSFET) Types, characteristics, power MOSFET, and biasing

4 JFET Two Types: n channel and p channel Junction Field-effect Transistor (JFET) The leads are connected to each end of the channel Drain: Connected to the upper end of the channel Source: Connected to the lower end of the channel In case of n channel JFET Two p-type regions are diffused in the n-type material to form a channel. In case of p channel JFET, two n-type regions are used.

5 Junction Field-effect Transistor (JFET) contd. Basic Operation V DD provides drain-to-source voltage. V GG sets the reverse-bias voltage between the gate and source. JFET is always operated with the gate-source junction reverse-biased.

6 Junction Field-effect Transistor (JFET) contd.

7 JFET Characteristics and Parameters Zero V GG Ohmic Region When V DS increases, I D will increase proportionally. Channel resistance is essentially constant. Active Region I D becomes essentially constant. Starting at the Pinch-Off Voltage, V p. V GD increases and creates a depletion region that offsets the increase in V GS.

8 JFET Characteristics and Parameters contd. Zero V GG contd. Breakdown The point at which I D starts to increase very rapidly with any increase in V DS. Usual Operation of the JFET In the active region.

9 JFET Characteristics and Parameters contd. V GS Controls I D I D decreases as the value of V GS increases. The depletion region is increased and the channel is narrowed.

10 JFET Characteristics and Parameters contd. Cutoff Voltage The value of V GS that makes I D approximately zero. Therefore, the JFET must be operated Between V GS = 0 V and V GS(off). I D will, therefore, vary between I DSS (max value) and zero.

11 JFET Characteristics and Parameters contd. Remarks The pinch-off voltage Vp is measured when V GS = 0. I D starts to be constant. I D is maximum and equals to I DSS. The pinch-off occurs for any value of V GS (less than 0) I D starts to be constant. I D is less than I DSS. V DS is less than Vp. Cutoff Voltage and Pinch-off voltage They are equal in magnitude and opposite in sign.

12 Example 8-1 V GS(off) = -4 V and I DSS = 12 ma. JFET Characteristics and Parameters contd. Determine the minimum value of V DD to put the device in the constant-current region of operation when V GS = 0V. V DS = V P = - V GS(off) = 4 V. I 12 ma D = IDSS = V = I R = (12mA)(560 Ω ) = 6.72 V R D D D V = 4 V 6.72V V DD V + DS V = + = R D

13 JFET Universal Transfer Characteristic Transconductance curve. JFET Characteristics and Parameters contd. I = 0, when V = V D GS GS GS(off) I I = DSS, when V = 0.5V D 4 GS I I = DSS, when V = 0.3V D 2 GS and I = I, when V = 0 D DSS GS(off) GS(off)

14 JFET Characteristics and Parameters contd. Characteristic Curve It is expressed approximately by I D I DSS 1 V 2 VGS GS(off) JFETs and MOSFETs are known as square-law devices

15 The Forward Transconductance JFET Characteristics and Parameters contd. The change in drain current for a given change in gate-to-source voltage. ΔI g D m = Δ V GS g m m0 = g 1 V VGS GS(off) g m0 2I = V DSS GS(off) with g m0 as the minimum transconductance.

16 JFET Characteristics and Parameters contd. Input Resistance and Capacitance The JFET operates with a reverse-biased gate-source junction. Therefore, the gate resistance is very high. R IN = V I GS GSS With I GSS as the reverse gate-to-source current. AC Drain-to-Source Resistance Above pinch-off, the drain current is almost constant. The ac drain-to-source resistance is given by: r ' ds ΔV = Δ I DS D

17 JFET Biasing Self Biasing The gate resistor does not affect the bias because its voltage = 0. However, it forces the gate to be at 0 V and block ground ac signal.

18 JFET Biasing contd. Self Biasing contd. V = V V = 0 I R = I R GS G S D S D S V = V V V DS DD R R S D = V I ( R + R ) DD D S D

19 JFET Biasing contd. Example 8-6 Self Biasing V = V V = 15V (5mA)(1,0k Ω ) = 10 V D DD R D V = I R = (5mA)(220 Ω ) = 1.1V GS D S V = 15V 5V 1.1V 8.9 V DS V V V = = DD Rs R D

20 JFET Biasing contd. Self Biasing contd. Setting the Q-point We set Rs to achieve the required Q-point R s = V I GS D Note that: Midpoint Bias I D I DSS 1 V 2 VGS GS(off) 2 V /3.4 GS(off) D DSS = V DSS GS(off) I I I

21 JFET Biasing contd. Self Biasing Example 8-9 I DSS = 1.0 ma, V GS(off) = -0.5 V Find Rs for midpoint bias. I 1.0 ma 0.5 ma 2 2 I = DSS = = D V GS VGS(off) = = 0.5 V = 147 mv R V 147 mv 294 = GS = = Ω S ID 0.5 ma R V V = DD D = 12 kω D ID

22 JFET Biasing contd. Graphical Analysis of a Self-Biased JFET The Q-point can be found from the graph.

23 JFET Biasing contd. Voltage-Divider Bias V G = R R 2 + R 1 2 V DD V = V V = V I R GS G S G D S I D V = G V R S GS

24 JFET Biasing contd. Voltage-Divider Bias contd. V GS does not equal zero when I D = 0. (V GS = V G ) When V GS = 0. I D = V G / R S

25 JFET Biasing contd. Q-Point Stability Transfer characteristic differ considerably from a device to another.

26 JFET Biasing contd. Stability Self-bias versus voltage-divider bias I D is much more stable in case of voltage-divider bias.

27 JFET Biasing contd. Current-Source Bias Current-source method for increasing the Q-point stability. The emitter current is almost constant I E V V = EE BE R D E E I I

28 The MOSFET Metal Oxide Semiconductor FET (MOSFET) The MOSFET does not have a pn junction The gate is insulated from the channel by a silicon dioxide (SiO2) Basic Types of MOSFET Enhancement MOSFET (E-MOSFET) Depletion MOSFET (D-MOSFET)

29 The MOSFET contd. Enhancement MOSFET (E-MOSFET) It does not have structural channel. The +ve gate voltage must be above a threshold to induce a channel. V DD pulls the electrons and makes the current flow.

30 The MOSFET contd. Depletion MOSFEST (D-MOSFET) It has a structural channel. It has two modes of operation (n-channel) Depletion mode: When a negative gate-to-source is applied (General operation mode.) Enhancement mode: When a positive gate-to-source is applied. The p-channel is similar with reversed voltage polarities.

31 The MOSFET contd. Depletion MOSFEST (D-MOSFET) contd. Depletion Mode The gate is a plate and the channel as the other plate of a capacitor. Negative voltage at the gate will deplete electrons from the channel. Therefore, the conductivity of the channel will be reduced. At a sufficiently large gate voltage, V GS(off), I D is zero.

32 The MOSFET contd. Depletion MOSFEST (D-MOSFET) contd. Enhancement Mode Positive voltage at the gate will attract more electrons from the channel. Therefore, the conductivity of the channel will be increased.

33 Power MOSFET Structures Conventional Enhancement MOSFET (E-MOSFET) The channel is long, therefore the resistance is high between the drain and the source. Not designed for power applications. Laterally Diffused MOSFET (LDMOSFET) It has a lateral channel structure designed for power applications. Shorter channel bet. drain and source results in lower resistance. +ve gate voltage induces a very short n channel. E-MOSFET LDMOSFET

34 Power MOSFET Structures contd. The V-Groove MOSFET (VMOSFET) Designed for high power applications Short (Vertical) and wide channel between D and S is created It has 2 source connections. The TMOSFET Short (Vertical) and wide channel between D and S is created

35 E-MOSFET General Transfer Char. Curves MOSFET Characteristics and Parameters The Drain Current I = K( V V ) D GS GS(th) K is a constant dependant on the particular MOSFET. 2

36 D-MOSFET General Transfer Char. Curves MOSFET Characteristics and Parameters The Drain Current I D I DSS 1 V 2 VGS GS(off)

37 MOSFET Biasing E-MOSFET Bias I = K( V V ) D GS GS(th) 2 Voltage-divider bias Drain-feedback bias V GS DS = R 2 R + R 1 2 V V = V I R DD DD D D V GS = V DS

38 MOSFET Biasing contd. D-MOSFET Bias Zero-biased D-MOSFET No AC source V GS = 0. AC Operation AC input varies V GS to positive and negative values.

39 Lecture Summary Introduced the Junction Field-effect Transistor (JFET) Structure, characteristics and parameters, and biasing Introduced the Metal Oxide Semiconductor FET (MOSFET) Types, characteristics, power MOSFET, and biasing

40 Discussion & Notes K K A K A A A A K K K K A K A K K A K A K A

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