ELEC-E8421 Components of Power Electronics

Size: px
Start display at page:

Download "ELEC-E8421 Components of Power Electronics"

Transcription

1 ELEC-E8421 Components of Power Electronics MOSFET

2 Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Vertical structure makes paralleling of many small MOSFETs on the chip easy. Very low R DS (< 10 mω) can be achieved. MOSFET control is easy due to capacitive gate Fast switching as no recombination is needed at turn off. In n-type majority carrier devices only electrons carry the current. Drain Gate Cross-section view of vertical MOSFET Source Circuit symbol

3 Detailed cross-section view of vertical MOSFET Note the parasitic components due to vertical structure! Source area Gate Contact area

4 Problems due to parasitic components 2nd breakdown Parasitic npn transistor may cause 2nd breakdown if it becomes active due to body diode's reverse recovery current and/or high du/dt. The 2nd breakdown voltage may be only half of the normal U DS rating. The activation of body diode can be prevented by adding two diodes, external parallel freewheeling diode and another in series with the MOSFET. Today problems with body diode are mostly solved and especially with SiC MOSFETs the body diode properties are so good that no external diodes are needed G R G du/dt current C GD C GS D R D C GS R b Diode's reverse current Body diode = parasitic transistor's BC p-n junction S R b value should be low enough to prevent 2nd breakdown!

5 Problems due to parasitic JFET fixed The increased resistance due to parasitic JFET was solved with trench gate and charge compensated structure (super junction, CoolMOS). With trench gate the channel is also vertical. Thus the route between drain and source is shorter and utilization of chip area is better. Super junction structure increases depletion region in off-state and thus increases voltage rating. It allows also higher n-epi doping that reduces resistance in on-state.

6 Avalanche breakdown capability Today many MOSFETs can tolerate avalanche when switching inductive loads Test circuit

7 Thermal runaway P Silicon MOSFET's on-resistance H increases significantly with temperature There is a risk of thermal runaway if the transistor is not cooled efficiently (slight increase of R thja or T A may cause the stable intersection point to vanish) SiC MOSFETs have smaller resistance increase and are thus not prone to runaway. Heat sink characteristic P H sink = (T J T A )/R thja T A Stable Unstable Runaway P H fet > P H sink MOSFET power loss P H fet = R DS (T J ) I D 2 T J

8 Switching characteristics Parasitic capacitances in datasheets: C iss = C GD + C GS C oss = C GD + C DS C rss = C GD Miller effect current path C GD LOAD Miller effect C GS C DS

9 SiC MOSFETs First SiC MOSFETs were made in 2008 Today (2015) voltage ratings in catalogs are up to 1700 V and module current ratings up to 300 A. Thus about ten times the power transfer capability than with silicon MOSFETs SiC MOSFETs R DS increases much less with temperature than the silicon one's resistance SiC MOSFET's internal body diode has much lower recovery losses than the silicon one's diode, comparable often with the Schottky diode. Thus often no external freewheeling diode is used. Due to the SiC body diode's higher U F it is common to keep the channel conducting also current flowing from source to drain. SiC MOSFETs junction temperature can be today up to 200 C when silicon ones usually cannot tolerate more than 150 C. Higher gate voltage, V is recommended for SiC MOSFETs than for silicon ones that typically need only V gate voltage SiC MOSFET reliability issues such as gate trapped charges and body diode's crystal stacking defect propagation seem to have been solved but long time reliability is still naturally unknown.

10 Datasheet parameters of MOSFET Voltages V DSS (drain-source), V DGO, V GS Currents I D, I DM, I GM Power loss P D Temperatures T J, T STG Thermal resistance R thjc Transconductance g FS = ΔI D / ΔV GS (unit siemens S, sometimes even mhos or used!) Gate theresold voltage V GS(th) On-state resistance R DS(on) Capacitances C iss, C oss, C rss Switching times Turn-on delay time t d(on), Rise time t r Turn-off delay time t d(off) Fall time t f

11 MOSFET datasheet diagrams Drain current vs. drain-source resistance characteristic Gate-source voltage vs. drain current characteristic

12 MOSFET datasheet diagrams Drain-Source voltage vs. capacitance characteristic

13 Galvanic isolated gate control circuit Example of one gate driver circuit from an application sheet Note that this may need careful design with voltage levels!

14 Synchronous rectifier Instead of diodes MOSFETs can be used as very low voltage drop rectifiers. For example, if R DS = 10 mω, the voltage drop at 10 A is only 0,1 V.

30V N-Channel Trench MOSFET

30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD12N3AT, TTP12N3AT 3V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in

More information

40V N-Channel Trench MOSFET

40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 40V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters

More information

30V N-Channel Trench MOSFET

30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 3V N-Channel Trench MOSFET TTG9N3AT APPLICATIONS Synchronous Rectification in DC/DC and AC/DC

More information

20V N-Channel Trench MOSFET

20V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTE8N2AT 2V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC

More information

40V N-Channel Trench MOSFET

40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 4V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters

More information

150V N-Channel Trench MOSFET

150V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TMP17N15A 15V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and

More information

100V P-Channel Trench MOSFET

100V P-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD18P1AT, TTP18P1AT 1V P-Channel Trench MOSFET APPLICATIONS Load Switches Battery Switch

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a

More information

HGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS

HGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS , HGI29NSL P- Feature High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness % UIS Tested, % Rg Tested Lead Free, Halogen Free V N-Ch Power MOSFET V

More information

HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET

HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe

More information

STARPOWER MOSFET MD25CUR120D6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER MOSFET MD25CUR120D6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR MOSFET MD25CUR120D6S 1200V/25A chopper in one-package General Description STARPOWER MOSFET Power Module provides very low R DS(on) as well as optimized intrinsic diode. It s designed

More information

TO Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 088R06VT SW088R06VT TO-220 TUBE. Symbol Parameter Value Unit

TO Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 088R06VT SW088R06VT TO-220 TUBE. Symbol Parameter Value Unit Features High ruggedness Low R DS(ON) (Typ 10mΩ)@V GS =4.5V Low R DS(ON) (Typ 8.2mΩ)@V GS =10V Low Gate Charge (Typ 48nC) Improved dv/dt Capability 100% Avalanche Tested Application: Electronic Ballast,

More information

Advanced Power Electronics Corp.

Advanced Power Electronics Corp. Advanced Power Electronics Corp AP65SL99AWL Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET % R g & UIS Test D V DS @ T j,max 7V Fast Switching Characteristic R DS(ON) 99mΩ 3 Simple Drive

More information

SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω

SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON

More information

STARPOWER MOSFET MD50SGR120D6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER MOSFET MD50SGR120D6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR MOSFET MD50SGR120D6S 1200V/50A 1 in one-package General Description STARPOWER MOSFET Power Module provides very low R DS(on) as well as optimized intrinsic diode. It s designed

More information

Dual N-channel Enhancement-mode Power MOSFETs

Dual N-channel Enhancement-mode Power MOSFETs Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description

More information

N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source

N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features High ruggedness Low R DS(ON) (Typ 0.23Ω)@V GS =10V Low Gate Charge (Typ 42nC) Improved dv/dt Capability 100% Avalanche Tested Application:

More information

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested

More information

MDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ

MDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ General Description MDE1N26RH Single N-channel Trench MOSFET V, 12A, 2.6mΩ The MDE1N26 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

AP6900GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp.

AP6900GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. AP69GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S/D2 Simple Drive Requirement CH- BV DSS 3V S/D2 DC-DC Converter Suitable R DS(ON) 3mΩ G S/D2

More information

Product Summery. Applications

Product Summery. Applications General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter

More information

HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET

HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features High ruggedness Low R DS(ON) (Typ 0.67Ω)@V GS =10V Low Gate Charge (Typ 30nC) Improved dv/dt Capability 100% Avalanche Tested

More information

Appendix: Power Loss Calculation

Appendix: Power Loss Calculation Appendix: Power Loss Calculation Current flow paths in a synchronous buck converter during on and off phases are illustrated in Fig. 1. It has to be noticed that following parameters are interrelated:

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.

More information

STARPOWER MOSFET MD680SGN100B3S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 100V/680A 1 in one-package

STARPOWER MOSFET MD680SGN100B3S. General Description. Features. Typical Applications SEMICONDUCTOR. Molding Type Module. 100V/680A 1 in one-package STARPOWER SEMICONDUCTOR MOSFET MD680SGN100B3S Molding Type Module 100V/680A 1 in one-package General Description STARPOWER MOSFET Power Module provides very low R DS(on) as well as optimized intrinsic

More information

HFI50N06A / HFW50N06A 60V N-Channel MOSFET

HFI50N06A / HFW50N06A 60V N-Channel MOSFET HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche

More information

TO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc

TO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc MSP120N08G 80V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced technology. which provides high performance in on-state resistance, fast switching

More information

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ

MDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ General Description The MDP193 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP193 is suitable

More information

TO-220 TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 7N65 SW7N65 TO-220 TUBE 2 SW F 7N65 SW7N65 TO-220F TUBE

TO-220 TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 7N65 SW7N65 TO-220 TUBE 2 SW F 7N65 SW7N65 TO-220F TUBE N-channel Enhanced mode TO-220F/TO-220 MOSFET Features High ruggedness Low R DS(ON) (Typ 1.2Ω)@V GS =10V Low Gate Charge (Typ32 nc) Improved dv/dt Capability 100% Avalanche Tested Application: Charge,LED,PC

More information

AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.

AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. AP5GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge D N-CH BV DSS V S Low On-resistance D R DS(ON) 7mΩ Surface Mount Package I D.A

More information

SSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET

SSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON

More information

MMD65R900Q 650V 0.90Ω N-channel MOSFET

MMD65R900Q 650V 0.90Ω N-channel MOSFET MMD65R900Q 650V 0.90Ω N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide

More information

Power MOSFET Basics. Table of Contents. 2. Breakdown Voltage. 1. Basic Device Structure. 3. On-State Characteristics

Power MOSFET Basics. Table of Contents. 2. Breakdown Voltage. 1. Basic Device Structure. 3. On-State Characteristics Power MOSFET Basics Table of Contents P-body N + Source Gate N - Epi 1. Basic Device Structure 2. Breakdown Voltage 3. On-State Characteristics 4. Capacitance 5. Gate Charge 6. Gate Resistance 7. Turn-on

More information

HSMT8. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 12 Switching Basic ordering unit (pcs) 3000

HSMT8. Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 12 Switching Basic ordering unit (pcs) 3000 RQ3E180AJ Nch 30V 18A Middle Power MOSFET Datasheet V DSS R DS(on) (Max.) 30V 4.5mΩ I D ±30A P D 2W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant

More information

MDV1545 Single N-Channel Trench MOSFET 30V

MDV1545 Single N-Channel Trench MOSFET 30V General Description The MDV1545 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1545 is suitable

More information

TO-220SF. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW MN 12N65DA SW12N65DA TO-220SF TUBE. Symbol Parameter Value Unit

TO-220SF. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW MN 12N65DA SW12N65DA TO-220SF TUBE. Symbol Parameter Value Unit Features High ruggedness Low R DS(ON) (Typ 0.75Ω)@V GS =10V Low Gate Charge (Typ 43nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power Order Codes Absolute maximum ratings

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified 800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Product Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A

Product Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A SIAI N-Channel Enhancement Mode Power MOSFET General Description The S75NF75 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use

More information

TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE

TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm

More information

D1/D2 S1 G1 S2 G2 TO-252-4L

D1/D2 S1 G1 S2 G2 TO-252-4L Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-compliant, halogen-free Description S1 G1 S2 G2 D1/D2 TO-252-4L

More information

UF3C120080K4S. 1200V-80mW SiC Cascode DATASHEET. Description. Features. Typical applications CASE D (1) CASE G (4) KS (3) S (2) Rev.

UF3C120080K4S. 1200V-80mW SiC Cascode DATASHEET. Description. Features. Typical applications CASE D (1) CASE G (4) KS (3) S (2) Rev. 1V-8mW SiC Cascode Rev. A, January 19 DATASHEET UF3C18K4S CASE CASE D (1) Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized

More information

IRF130, IRF131, IRF132, IRF133

IRF130, IRF131, IRF132, IRF133 October 1997 SEMICONDUCTOR IRF13, IRF131, IRF132, IRF133 12A and 14A, 8V and 1V,.16 and.23 Ohm, N-Channel Power MOSFETs Features Description 12A and 14A, 8V and 1V r DS(ON) =.16Ω and.23ω Single Pulse Avalanche

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

STARPOWER MOSFET MD50FFC120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER MOSFET MD50FFC120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR MOSFET MD50FFC120C5S 1200V/50A 6 in one-package General Description STARPOWER MOSFET Power Module provides very low R DS(on) as well as optimized intrinsic diode. It s designed

More information

Value TO220 TO220F TO251N TO252 TO262 TO220SF V DSS Drain to source voltage 650 V

Value TO220 TO220F TO251N TO252 TO262 TO220SF V DSS Drain to source voltage 650 V Features High ruggedness Low R DS(ON) (Typ 0.36Ω)@V GS =10V Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, Charge, PC Power Order Codes Absolute maximum ratings

More information

AO3401 P-Channel Enhancement Mode Field Effect Transistor

AO3401 P-Channel Enhancement Mode Field Effect Transistor July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages

More information

AO3408 N-Channel Enhancement Mode Field Effect Transistor

AO3408 N-Channel Enhancement Mode Field Effect Transistor August 2 AO348 N-Channel Enhancement Mode Field Effect Transistor General Description The AO348 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages

More information

Operating Junction and 55 to +175 C Storage Temperature Range

Operating Junction and 55 to +175 C Storage Temperature Range Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified 500V N-Channel MOSFET BS = 500 V R DS(on) typ = 0.22 = 8A Apr 204 FEATURES TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances

More information

MMIS70H900Q 700V 1.4Ω N-channel MOSFET

MMIS70H900Q 700V 1.4Ω N-channel MOSFET MMIS70H900Q 700V 1.4Ω N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide

More information

Complementary N- and P-Channel 40-V (D-S) MOSFET

Complementary N- and P-Channel 40-V (D-S) MOSFET Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -

More information

AP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp.

AP4957AGM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. RoHS-compliant Product dvanced Power P-CHNNEL ENHNCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BV DSS -3V Simple Drive Requirement R DS(ON) 6mΩ Dual P MOSFET Package I D -7. Description

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,

More information

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS

More information

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R240S SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R240S Rev. 1.1 Aug. 2017 SSP80R240S/SSF80R240S/SSB80R240S 800V N-Channel

More information

P2G N2D/P2D P1S/P2S P1G N2G N1S N2S SO-8 N1G N1D/P1D. Symbol Parameter

P2G N2D/P2D P1S/P2S P1G N2G N1S N2S SO-8 N1G N1D/P1D. Symbol Parameter Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Full Bridge Applications RoHS-compliant, halogen-free Description PG ND/PD PS/PS PG SO-8 NG

More information

AOD405 P-Channel Enhancement Mode Field Effect Transistor

AOD405 P-Channel Enhancement Mode Field Effect Transistor Jan 4 P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. With the excellent

More information

N & P-Channel 100-V (D-S) MOSFET

N & P-Channel 100-V (D-S) MOSFET N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives

More information

TO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE

TO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This

More information

UNISONIC TECHNOLOGIES CO., LTD UTT100N06

UNISONIC TECHNOLOGIES CO., LTD UTT100N06 UNISONIC TECHNOLOGIES CO., LTD UTT1N6 1A, 6V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT1N6 is an N-channel enhancement mode Power FET using UTC s advanced technology to provide customers

More information

UNISONIC TECHNOLOGIES CO., LTD UT4435

UNISONIC TECHNOLOGIES CO., LTD UT4435 UNISONIC TECHNOLOGIES CO., LTD UT4435-8.8A, -30V P-CHANNEL POWER MOSFET DESCRIPTION The UT4435 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate

More information

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited)

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited) General Description The MDU4N uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU4N is suitable device

More information

AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor

AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor May 22 AO68 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO68 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable

More information

G2 S2 S1 G1 SO-8. Symbol Parameter V ±20 ±20 V A A A 2.0 W Linear Derating Factor W/ C Storage Temperature Range

G2 S2 S1 G1 SO-8. Symbol Parameter V ±20 ±20 V A A A 2.0 W Linear Derating Factor W/ C Storage Temperature Range AP5GM-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free Description D D D D SO- G S S

More information

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature

More information

AOD436 N-Channel Enhancement Mode Field Effect Transistor

AOD436 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is

More information

YJS12N10A. N-Channel Enhancement Mode Field Effect Transistor

YJS12N10A. N-Channel Enhancement Mode Field Effect Transistor RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary V DS I D R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =6V) 100% UIS Tested 100% VDS Tested 100V 12A

More information

TO-92. Item Sales Type Marking Package Packaging 1 SWC 2N40D SW2N40D TO-92 TAPE 2 SW SA 2N40D SW2N40D SOT-223 REEL

TO-92. Item Sales Type Marking Package Packaging 1 SWC 2N40D SW2N40D TO-92 TAPE 2 SW SA 2N40D SW2N40D SOT-223 REEL N-channel Enhanced mode TO-92/SOT-223 MOSFET Features High ruggedness Low R DS(ON) (Typ 2.8Ω)@V GS =10V Low Gate Charge (Typ 7nC) Improved dv/dt Capability 100% Avalanche Tested Application:DC-DC,LED TO-92

More information

SOT-227 Power Module Single Switch - Power MOSFET, 420 A

SOT-227 Power Module Single Switch - Power MOSFET, 420 A SOT-7 Power Module Single Switch - Power MOSFET, 4 A FEATURES I D > 4 A, T C = 5 C TrenchFET power MOSFET VS-FC4SA SOT-7 PRIMARY CHARACTERISTICS V DSS V R DS(on).3 I () D 33 A at 9 C Type Modules - MOSFET

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,

More information

PWRLITE LD1010D High Performance N-Ch Vertical Power JFET Transistor with Schottky G D S

PWRLITE LD1010D High Performance N-Ch Vertical Power JFET Transistor with Schottky G D S www.lovoltech.com PWRLITE LD11D High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Trench Power JFET with low threshold voltage Vth. Device fully ON with Vgs =.7V Optimum for Low

More information

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance

More information

V DSS R DS(on) max (mw)

V DSS R DS(on) max (mw) Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

N-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..

N-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc.. Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power

More information

SMK0460IS Advanced N-Ch Power MOSFET

SMK0460IS Advanced N-Ch Power MOSFET Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On resistance: R DS(on) =2.1Ω

More information

ACE2305B. P-Channel Enhancement Mode Field Effect Transistor. Description

ACE2305B. P-Channel Enhancement Mode Field Effect Transistor. Description Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

More information

TSMT5. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Load switch, DC/ DC conversion Basic ordering unit (pcs) 3000

TSMT5. Embossed Tape Reel size (mm) 180 lapplication Type Tape width (mm) 8 Load switch, DC/ DC conversion Basic ordering unit (pcs) 3000 QS5U13 2.5V Drive Nch+SBD MOSFET Datasheet V DSS R DS(on) (Max.) I D 30V 154mΩ ±2.0A P D 1.25W loutline TSMT5 lfeatures 1) The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5

More information

TSMT8. Embossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000 Taping code

TSMT8. Embossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000 Taping code QH8MA3 30V Nch+Pch Middle Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch TSMT8 V DSS 30V -30V R DS(on) (Max.) 29mΩ 48mΩ I D ±7.0A ±5.5A P D 2.5W lfeatures 1) Low on - resistance. 2) Small Surface

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel 6 V (D-S) 75 C MOSFET TO-263 7-Lead D S FEATURES TrenchFET power MOSFET Package with low thermal resistance % R g and UIS tested AEC-Q qualified Material categorization: for definitions

More information

Advanced Power Electronics Corp.

Advanced Power Electronics Corp. dvanced Power Electronics Corp P76I--HF Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOSFET % valanche Test D BV DSS 65V Fast Switching Characteristic R DS(ON) Ω Simple Drive Requirement I D G RoHS

More information

600V Super-Junction Power MOSFET

600V Super-Junction Power MOSFET 600V Super-Junction Power MOSFET FEATURES Very low FOM R DS(on) Q g 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction

More information

200V N-Channel MOSFET

200V N-Channel MOSFET 2V N-Channel MOSFET TMA18N2H,TMP18N2H FEATURES Fast switching 1% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor

More information

60V N-Channel MOSFET

60V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability ESD protection between Gate and Source 60V N-Channel MOSFET APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor

More information

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,

More information

MDV1548 Single N-Channel Trench MOSFET 30V

MDV1548 Single N-Channel Trench MOSFET 30V General Description The MDV1548 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1548 is suitable

More information

HCD80R600R 800V N-Channel Super Junction MOSFET

HCD80R600R 800V N-Channel Super Junction MOSFET HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

SUD40N06-25L. N-Channel 60-V (D-S), 175 C MOSFET, Logic Level. Vishay Siliconix FEATURES PRODUCT SUMMARY

SUD40N06-25L. N-Channel 60-V (D-S), 175 C MOSFET, Logic Level. Vishay Siliconix FEATURES PRODUCT SUMMARY N-Channel 6-V (D-S), 75 C MOSFET, Logic Level SUD4N6-25L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.22 @ V GS = V 3 6.25 @ V GS = 4.5 V 3 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature

More information

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S

More information

SMN630LD Logic Level N-Ch Power MOSFET

SMN630LD Logic Level N-Ch Power MOSFET Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features Drain-Source breakdown voltage: BV DSS =200V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On-Resistance: R DS(on) =0.34Ω

More information

Product Summary. BV DSS typ. 80 V R DS(ON) max. 4 mω I D 200 A

Product Summary. BV DSS typ. 80 V R DS(ON) max. 4 mω I D 200 A N-Channel Enhancement Mode Power MOSFET General Description The YMP200N08 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use

More information

Device Marking Device Device Package Reel Size Tape width Quantity NCEP4085EG NCEP4085EG DFN5X6-8L - - -

Device Marking Device Device Package Reel Size Tape width Quantity NCEP4085EG NCEP4085EG DFN5X6-8L - - - http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

More information