Size: px
Start display at page:

Transcription

1 Analog Electronics

2 BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the heavily doped emitter and moderately doped collector regions. npn B (base) C (collector) n p n Base-Collector junction Base-Emitter junction pnp B C p n p The pn junction joining the base region and the emitter region is called the baseemitter junction. E (emitter) E The pn junction joining the base region and the collector region is called the basecollector junction

3 BJT Operation In normal operation, the base-emitter is forward-biased and the base-collector is reverse-biased. For the npn type shown, the collector is more positive than the base, which is more positive than the emitter. For the pnp type, the voltages are reversed to maintain the forward-reverse bias. BC reversebiased BC reversebiased BE forwardbiased BE forward- biased pnp npn

4 BJT Currents The direction of conventional current is in the direction of the arrow on the emitter terminal. The emitter current is the sum of the collector current and the small base current. That is, I E = I C I B. I C I C I C I C I B n p I B I B p n I B n p I E I E I E I E npn pnp

5 BJT Parameters Two important parameters, β DC (dc current gain) and α DC are introduced and used to analyze a BJT circuit. DC Beta (β DC ) Ratio of DC collector current and DC base current. β DC = = I C /I B DC Alpha (α DC ) Ratio of DC collector current to the DC emitter current. α DC = = I C /I E V BB forward bias the baseemitte jumction and V CC reverse bias the base-collector junction

6 Transistor DC Model BJT in un-saturation mode is a current controlled current source. Input circuit is a forward-biased diode through which there is base current. The output circuit is dependent current source. The value of o/p current is dependent on base current.

7 BJT Circuit Analysis Currents and voltages in BJT I B : dc base current I E : dc emitter current I C : dc source current V BE : dc voltage at base wrt. emitter V CE : dc voltage at collector wrt. emitter. V CB : dc voltage at collector wrt. Base.

8 BJT Characteristics The collector characteristic curves show the relationship of the three transistor currents. The curve shown is for a fixed based current. The first region is the saturation region. As V CE is increased, I C increases until B. Then it flattens in region between points B and C, which is the active region. After C, is the breakdown region. I C B Saturation region Active region Breakdown region A V V CE(max) V CE C

9 BJT Characteristics The collector characteristic curves illustrate the relationship of the three transistor currents. I C By setting up other values of I B6 base current, a family of I B5 collector curves is developed. b DC is the ratio of collector current to base current. IC bdc I It can be read from the curves. The value of b DC is nearly the same wherever it is read. B 0 Cutoff region I B4 I B3 I B2 I B1 I B = 0 V CE

10 BJT Characteristics What is the b DC for the transistor shown? I C (ma) Choose a base current near the center of the range in this case I B3 which is 30 ma. Read the corresponding collector current in this case, 5.0 ma. Calculate the ratio: I B6 I B5 I B4 I B3 I B2 I B1 = 60 ma = 50 ma = 40 ma = 30 ma = 20 ma = 10 ma b DC I I C 167 B 5.0 ma 30 ma 0 I B = 0 V CE

11 Cutoff In a BJT, cutoff is the condition in which there is no base current, which results in only an extremely small leakage current (I CEO ) in the collector circuit. For practical work, this current is assumed to be zero. In cutoff, neither the base-emitter junction, nor the base-collector junction are forward-biased. R B R C I CEO V CE V CC I B = 0 V CC

12 Saturation In a BJT, saturation is the condition in which there is maximum collector current. The saturation current is determined by the external circuit (V CC and R C in this case) because the collector-emitter voltage is minimum ( 0.2 V) When the base-emitter junction is forward biased and there is enough base current to produce maximum collector current, the transistor is saturated In saturation, an increase of base current has no effect on the collector circuit and the relation I C = b DC I B is no longer valid. V BB R B V CE = V CC I C R C V CC I B R C I C(SAT) =V CC V CE(SAT) /R C I B(min) = I C(SAT) β DC I C

13 DC Load Line The DC load line represents the circuit that is external to the transistor. It is drawn by I C connecting the saturation Saturation I and cutoff points. C(sat) The transistor characteristic curves are shown superimposed on the load line. The region between the saturation and cutoff points is called the active region. I B = 0 Cutoff 0 V CE(sat) V CC V CE

14 DC Load Line R C 3.3 kw What is the saturation current and the cutoff voltage for the circuit? V BB Assume V CE = 0.2 V in saturation. 3 V VCC R B β DC = V 220 kw I SAT V 0.2 V 15 V 0.2 V R 3.3 kw CC C 4.48 ma VCO VCC 15 V Is the transistor saturated? I B 3.0 V 0.7 V m A 220 kw I C = b I B = 200 (10.45 ma) = 2.09 ma Since I C < I SAT, it is not saturated.

15 Data Sheets Data sheets give manufacturer s specifications for maximum operating conditions, thermal, and electrical characteristics. For example, an electrical characteristic is b DC, which is given as h FE. The 2N3904 shows a range of b s on the data sheet from 100 to 300 for I C = 10 ma. ON Characteristics DC current gain ( I C = 0.1 ma dc, V CE = 1.0 V dc) ( I C = 1.0 ma dc, V CE = 1.0 V dc) ( I C = 10 ma dc, V CE = 1.0 V dc) ( I C = 50 ma dc, V CE = 1.0 V dc) ( I C = 100 ma dc, V CE = 1.0 V dc) Characteristic Symbol Min Max Unit 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 h FE

16 Data Sheets

17 DC and AC Quantities The text uses capital letters for both AC and DC currents and voltages with rms values assumed unless stated otherwise. DC Quantities use upper case roman subscripts. Example: V CE. (The second letter in the subscript indicates the reference point.) AC Quantities and time varying signals use lower case italic subscripts. Example: V ce. Internal transistor resistances are indicated as lower case quantities with a prime and an appropriate subscript. Example: r e. External resistances are indicated as capital R with either a capital or lower case subscript depending on if it is a DC or ac resistance. Examples: R C and R c.

18 BJT Amplifiers A BJT amplifies AC signals by converting some of the DC power from the power supplies to AC signal power. An ac signal at the input is superimposed in the dc bias by the capacitive coupling. The output ac signal is inverted and rides on a dc level of V CE. V in R C V BB 0 V c V in V BB R B V b r e V c V CC V CE 0

19 BJT Switches A BJT can be used as a switching device in logic circuits to turn on or off current to a load. As a switch, the transistor is normally in either cutoff (load is OFF) or saturation (load is ON). V CC V CC V CC V CC R C I C = 0 R C R C I C(sat) R C I C(sat) 0 V R B I B = 0 C E V BB R B I B C E In cutoff, the transistor looks like an open switch. In saturation, the transistor looks like a closed switch.

20 The FET The idea for a field-effect transistor (FET) was first proposed by Julius Lilienthal, a physicist and inventor. In 1930 he was granted a U.S. patent for the device. His ideas were later refined and developed into the FET. Materials were not available at the time to build his device. A practical FET was not constructed until the 1950 s. Today FETs are the most widely used components in integrated circuits.

21 The JFET The JFET (or Junction Field Effect Transistor) is a normally ON device. For the n-channel device illustrated, when the drain is positive with respect to the source and there is no gate-source voltage, there is current in the channel. When a negative gate voltage is applied to the FET, the electric field causes the channel to narrow, which in turn causes current to decrease. V GG G p n n D S p R D V DD

22 The JFET As in the base of bipolar transistors, there are two types of JFETs: n-channel and p-channel. The dc voltages are opposite polarities for each type. The symbol for an n-channel JFET is shown, along with the proper polarities of the applied dc voltages. For an n-channel device, the gate is always operated with a negative (or zero) voltage with respect to the source. V GG Gate Drain Source R D V DD

23 The JFET There are three regions in the characteristic curve for a JFET as illustrated for the case when V GS = 0 V. Between A and B is the Ohmic region, where current and voltage are related by Ohm s law. From B to C is the active (or constant-current) region where current is essentially independent of V DS. Beyond C is the breakdown region. Operation here can damage the FET. I DSS 0 I D A Ohmic region B V P (pinch-off voltage) V GS = 0 Active region (constant current) C Breakdown V DS

24 The JFET When V GS is set to different values, the relationship between V DS and I D develops a family of characteristic curves for the device. Pinch-off Voltage I DSS V GS(off). I DSS I D V GS = 0 V GS = 1 V Notice that V p is positive and has the same magnitude as V GS(off). V P = 5 V V GS = 2 V V GS = 3 V V GS = 4 V V GS = V GS(off) = 5 V V DS

25 The JFET A plot of V GS to I D is called the transfer or transconductance characteristic curve. The transfer curve is a is a plot of the output current (I D ) to the input voltage (V GS ). The transfer curve is based on the equation I D I DSS I D I DSS V 1 V GS GS(off) By substitution, you can find other points on the curve for plotting the universal curve. 2 V GS V GS(off) 0.3 V GS(off) I DSS 2 I DSS V GS(off)

26 Summary JFET Input Resistance V The input resistance of a JFET is given by: GS RI N IGSS where I GSS is the current into the reverse biased gate. JFETs have very high input resistance, but it drops when the temperature increases. Compare the input resistance of a 2N5485 at 25 o C and at 100 o C. The specification sheet shows that for V GS = 20 V, I GSS 1 na at 25 o C and 0.2 ma at 100 o C. At 25 o VGS 20 V C, RI N 20 GW! I 1 na At 100 o C, R GSS V 20 V GS IN 100 MW IGSS 0.2 μa

27 Summary JFET Biasing Self-bias is simple and effective, so it is the most common biasing method for JFETs. With self bias, the gate is essentially at 0 V. V DD An n-channel JFET is illustrated. The current in R S develops the necessary reverse bias that forces the gate to be less than the source. = 12 V R D 1.5 kw Assume the resistors are as shown and the drain current is 3.0 ma. What is V GS? V G = 0 V; V S = (3.0 ma)(330 W) = 0.99 V V GS = V = 0.99 V R G 1.0 MW V G = 0 V R S I S 330 W

28 Summary JFET Biasing You can use the transfer curve to obtain a reasonable value for the source resistor in a self-biased circuit. I D (ma) What value of R S should you use to set the Q point as shown? 10 ma 8.0 The Q point is approximately at I D = 4.0 ma and V GS = 1.25 V. R V 1.25 V GS S ID 3.0 ma 375 W V GS Q

29 Summary JFET Biasing Voltage-divider biasing is a combination of a voltage-divider and a source resistor to keep the source more positive than the gate. V G is set by the voltage-divider and is independent of V S. V S must be larger than V G in order to maintain the gate at a negative voltage with respect to the source. R 1 V G V DD R D I D Voltage-divider bias helps stabilize the bias for variations between transistors. R 2 V S I S R S

30 The MOSFET The metal oxide semiconductor FET uses an insulated gate to isolate the gate from the channel. Two types are the enhancement mode (E-MOSFET) and the depletion mode (D-MOSFET). An E-MOSFET has no channel until it is induced by a voltage applied to the gate, so it operates only in enhancement mode. An n- channel type is illustrated here; a positive gate voltage induces the channel. Gate SiO 2 Drain n p substrate n Source E-MOSFET V GG Induced channel I D n n R D VDD

31 Summary The MOSFET The D-MOSFET has a channel that can is controlled by the gate voltage. For an n-channel type, a negative voltage depletes the channel; and a positive voltage enhances the channel. A D-MOSFET can operate in either mode, depending on the gate voltage. V GG n n p R D D-MOSFET V DD V GG n n p R D V DD operating in D-mode operating in E-mode

32 Summary The MOSFET MOSFET symbols are shown. Notice the broken line representing the E-MOSFET that has an induced channel. The n channel has an inward pointing arrow. E-MOSFETs D-MOSFETs D D D D G G G G S S S S n channel p channel n channel p channel

33 Summary The MOSFET The transfer curve for a MOSFET is has the same parabolic shape as the JFET but the position is shifted along the x-axis. The transfer curve for an n-channel E-MOSFET is entirely in the first quadrant as shown. The curve starts at V GS(th), which is a nonzero voltage that is required to have channel conduction. The equation for the drain current is 2 I K V V D GS GS(th) I D 0 V GS(th) V GS

34 The MOSFET The D-MOSFET can be operated in either mode. For the n- channel device illustrated, operation to the left of the y-axis means it is in depletion mode; operation to the right means is in enhancement mode. As with the JFET, I D is zero at V GS(off). When VGS is 0, the drain current is IDSS, which for this device is not the maximum current. The equation for drain current is 2 V GS ID IDSS 1 V GS(off) V GS V GS(off) I D I 0 DSS

35 MOSFET Biasing E-MOSFETs can be biased using bias methods like the BJT methods studied earlier. Voltage-divider bias and drainfeedback bias are illustrated for n-channel devices. V DD V DD R 1 R D R G R D R 2 Voltage-divider bias Drain-feedback bias

36 MOSFET Biasing The simplest way to bias a D-MOSFET is with zero bias. This works because the device can operate in either depletion or enhancement mode, so the gate can go above or below 0 V. V DD V DD R D R D V G = 0 V I DSS ac C V GS = 0 input R G R G Zero bias, which can only be used for the D-MOSFET

### Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering

Summary Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET A/Lectr. Khalid Shakir Dept. Of Electrical Engineering College of Engineering Maysan University Page 1-21 Summary The MOSFET The metal oxide

### CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) INTRODUCTION - FETs are voltage controlled devices as opposed to BJT which are current controlled. - There are two types of FETs. o Junction FET (JFET) o Metal

### Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing BJT Structure the BJT is formed by doping three semiconductor regions (emitter, base, and collector)

### Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE

Electronic Circuits Junction Field-effect Transistors Dr. Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of the Precedent Lecture Explain the Operation Class A Power

### Lecture 3: Transistors

Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,

### Figure1: Basic BJT construction.

Chapter 4: Bipolar Junction Transistors (BJTs) Bipolar Junction Transistor (BJT) Structure The BJT is constructed with three doped semiconductor regions separated by two pn junctions, as in Figure 1(a).

### FIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET)

FIELD EFFECT TRANSISTOR (FET) The field-effect transistor (FET) is a three-terminal device used for a variety of applications that match, to a large extent, those of the BJT transistor. Although there

### FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd

FET Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd FET (field-effect transistor) unipolar devices - unlike BJTs that use both electron and hole current, they operate only with one type

### I E I C since I B is very small

Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while

### ITT Technical Institute. ET215 Devices 1. Unit 7 Chapter 4, Sections

ITT Technical Institute ET215 Devices 1 Unit 7 Chapter 4, Sections 4.1 4.3 Chapter 4 Section 4.1 Structure of Field-Effect Transistors Recall that the BJT is a current-controlling device; the field-effect

### Field Effect Transistors (npn)

Field Effect Transistors (npn) gate drain source FET 3 terminal device channel e - current from source to drain controlled by the electric field generated by the gate base collector emitter BJT 3 terminal

### THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs

Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 12 Lecture Title: Analog Circuits

### 4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.

### Chapter 3. Bipolar Junction Transistors

Chapter 3. Bipolar Junction Transistors Outline: Fundamental of Transistor Common-Base Configuration Common-Emitter Configuration Common-Collector Configuration Introduction The transistor is a three-layer

### UNIT I - TRANSISTOR BIAS STABILITY

UNIT I - TRANSISTOR BIAS STABILITY OBJECTIVE On the completion of this unit the student will understand NEED OF BIASING CONCEPTS OF LOAD LINE Q-POINT AND ITS STABILIZATION AND COMPENSATION DIFFERENT TYPES

### EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices

EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

### ET215 Devices I Unit 4A

ITT Technical Institute ET215 Devices I Unit 4A Chapter 3, Section 3.1-3.2 This unit is divided into two parts; Unit 4A and Unit 4B Chapter 3 Section 3.1 Structure of Bipolar Junction Transistors The basic

### UNIT 3: FIELD EFFECT TRANSISTORS

FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are

### Electronic Circuits II - Revision

Electronic Circuits II - Revision -1 / 16 - T & F # 1 A bypass capacitor in a CE amplifier decreases the voltage gain. 2 If RC in a CE amplifier is increased, the voltage gain is reduced. 3 4 5 The load

### Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage

### UNIT 3 Transistors JFET

UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It

### Chapter 3 Bipolar Junction Transistors (BJT)

Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,

### BJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1

BJT Bipolar Junction Transistor Satish Chandra Assistant Professor Department of Physics P P N College, Kanpur www.satish0402.weebly.com The Bipolar Junction Transistor is a semiconductor device which

### Chapter 8. Field Effect Transistor

Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There

### 6. Field-Effect Transistor

6. Outline: Introduction to three types of FET: JFET MOSFET & CMOS MESFET Constructions, Characteristics & Transfer curves of: JFET & MOSFET Introduction The field-effect transistor (FET) is a threeterminal

### KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS Most of the content is from the textbook: Electronic devices and circuit theory, Robert

### Chapter Two "Bipolar Transistor Circuits"

Chapter Two "Bipolar Transistor Circuits" 1.TRANSISTOR CONSTRUCTION:- The transistor is a three-layer semiconductor device consisting of either two n- and one p-type layers of material or two p- and one

IFB270 Advanced Electronic Circuits Chapter 9: FET amplifiers and switching circuits Prof. Manar Mohaisen Department of EEC Engineering Review of the Precedent Lecture Review of basic electronic devices

### Field Effect Transistors

Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits

### FET(Field Effect Transistor)

Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,

### Chapter 5: Field Effect Transistors

Chapter 5: Field Effect Transistors Slide 1 FET FET s (Field Effect Transistors) are much like BJT s (Bipolar Junction Transistors). Similarities: Amplifiers Switching devices Impedance matching circuits

### UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

### Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field

### Three Terminal Devices

Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering

### Unit III FET and its Applications. 2 Marks Questions and Answers

Unit III FET and its Applications 2 Marks Questions and Answers 1. Why do you call FET as field effect transistor? The name field effect is derived from the fact that the current is controlled by an electric

### ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model

Faculty of Engineering ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model Agenda I & V Notations BJT Devices & Symbols BJT Large Signal Model 2 I, V Notations (1) It is critical to understand

### Bipolar Junction Transistors

Bipolar Junction Transistors Invented in 1948 at Bell Telephone laboratories Bipolar junction transistor (BJT) - one of the major three terminal devices Three terminal devices more useful than two terminal

### Field Effect Transistors

Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,

### MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap

MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor transistors for logic and memory Reading: Kasap 6.6-6.8 Vacuum tube diodes 2 Thermionic emission from cathode Electrons collected

### L MOSFETS, IDENTIFICATION, CURVES. PAGE 1. I. Review of JFET (DRAW symbol for n-channel type, with grounded source)

L.107.4 MOSFETS, IDENTIFICATION, CURVES. PAGE 1 I. Review of JFET (DRAW symbol for n-channel type, with grounded source) 1. "normally on" device A. current from source to drain when V G = 0 no need to

### Lecture (03) The JFET

Lecture (03) The JFET By: Dr. Ahmed ElShafee ١ JFET Basic Structure Figure shows the basic structure of an n channel JFET (junction field effect transistor). Wire leads are connected to each end of the

### ITT Technical Institute. ET215 Devices 1. Unit 8 Chapter 4, Sections

ITT Technical Institute ET215 Devices 1 Unit 8 Chapter 4, Sections 4.4 4.5 Chapter 4 Section 4.4 MOSFET Characteristics A Metal-Oxide semiconductor field-effect transistor is the other major category of

### Field - Effect Transistor

Page 1 of 6 Field - Effect Transistor Aim :- To draw and study the out put and transfer characteristics of the given FET and to determine its parameters. Apparatus :- FET, two variable power supplies,

### ชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร

EN2042102 วงจรไฟฟ าและอ เล กทรอน กส Circuits and Electronics บทท 7 ทรานซ สเตอร Bipolar Junction Transistor สาขาว ชาว ศวกรรมคอมพ วเตอร คณะว ศวกรรมศาสตร มหาว ทยาล ยเทคโนโลย ราชมงคลพระนคร Objectives Describe

### Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET).

Q. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Answer: N-Channel Junction Field Effect Transistor (JFET) Construction: Drain(D)

### UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

UNIT-I FIELD EFFECT TRANSISTOR 1. Explain about the Field Effect Transistor and also mention types of FET s. The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their

### Chapter 6: Field-Effect Transistors

Chapter 6: Field-Effect Transistors FETs vs. BJTs Similarities: Amplifiers Switching devices Impedance matching circuits Differences: FETs are voltage controlled devices. BJTs are current controlled devices.

### Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers. Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers

Tutorial 2 BJTs, Transistor Bias Circuits, BJT Amplifiers FETs and FETs Amplifiers Part 1: BJTs, Transistor Bias Circuits and BJT Amplifiers 1. Explain the purpose of a thin, lightly doped base region.

### Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-8 Junction Field

### Figure 1: JFET common-source amplifier. A v = V ds V gs

Chapter 7: FET Amplifiers Switching and Circuits The Common-Source Amplifier In a common-source (CS) amplifier, the input signal is applied to the gate and the output signal is taken from the drain. The

### ET Training. Electronics: JFET Instructor: H.Pham. The JUNCTION FIELF EFFECT TRANSISTOR (JFET) n channel JFET p channel JFET

The JUNCTION FIELF EFFECT TRANSISTOR (JFET) n channel JFET p channel JFET 1 The BIASED JFET VDD provides a drain-to-source voltage and supplies current from drain to source VGG sets the reverse-biased

### BJT Amplifier. Superposition principle (linear amplifier)

BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited

### Lecture (10) MOSFET. By: Dr. Ahmed ElShafee. Dr. Ahmed ElShafee, ACU : Fall 2016, Electronic Circuits II

Lecture (10) MOSFET By: Dr. Ahmed ElShafee ١ Dr. Ahmed ElShafee, ACU : Fall 2017, Electronic Circuits II Introduction The MOSFET (metal oxide semiconductor field effect transistor) is another category

### Lecture 12. Bipolar Junction Transistor (BJT) BJT 1-1

Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week

### COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline

COE/EE152: Basic Electronics Lecture 5 Andrew Selasi Agbemenu 1 Outline Physical Structure of BJT Two Diode Analogy Modes of Operation Forward Active Mode of BJTs BJT Configurations Early Effect Large

### PESIT Bangalore South Campus

INTERNAL ASSESSMENT TEST 2 Date : 19/09/2016 Max Marks: 40 Subject & Code : Analog and Digital Electronics (15CS32) Section: III A and B Name of faculty: Deepti.C Time : 8:30 am-10:00 am Note: Answer five

### MODULE-2: Field Effect Transistors (FET)

FORMAT-1B Definition: MODULE-2: Field Effect Transistors (FET) FET is a three terminal electronic device used for variety of applications that match with BJT. In FET, an electric field is established by

### Lecture (06) Bipolar Junction Transistor

Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢ BJT structure The BJT is constructed with three doped semiconductor regions One

### Questions on JFET: 1) Which of the following component is a unipolar device?

Questions on JFET: 1) Which of the following component is a unipolar device? a) BJT b) FET c) DJT d) EFT 2) Current Conduction in FET takes place due e) Majority charge carriers only f) Minority charge

### Difference between BJTs and FETs. Junction Field Effect Transistors (JFET)

Difference between BJTs and FETs Transistors can be categorized according to their structure, and two of the more commonly known transistor structures, are the BJT and FET. The comparison between BJTs

### Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each)

Q. No. WINTER 16 EXAMINATION (Subject Code: 17319) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer

### Prof. Paolo Colantonio a.a

Prof. Paolo Colantonio a.a. 20 2 Field effect transistors (FETs) are probably the simplest form of transistor, widely used in both analogue and digital applications They are characterised by a very high

### THE METAL-SEMICONDUCTOR CONTACT

THE METAL-SEMICONDUCTOR CONTACT PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider

### EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT 1. OBJECTIVES 1.1 To practice how to test NPN and PNP transistors using multimeter. 1.2 To demonstrate the relationship between collector current

### Chapter 3: Bipolar Junction Transistors

Chapter 3: Bipolar Junction Transistors Transistor Construction There are two types of transistors: pnp npn pnp The terminals are labeled: E - Emitter B - Base C - Collector npn 2 Transistor Operation

### Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering

MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter

### MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I

MEASUREMENT AND INSTRUMENTATION STUDY NOTES The MOSFET The MOSFET Metal Oxide FET UNIT-I As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available

### FET. Field Effect Transistors ELEKTRONIKA KONTROL. Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya. p + S n n-channel. Gate. Basic structure.

FET Field Effect Transistors ELEKTRONIKA KONTROL Basic structure Gate G Source S n n-channel Cross section p + p + p + G Depletion region Drain D Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya S Channel

### Transistors and Applications

Chapter 17 Transistors and Applications DC Operation of Bipolar Junction Transistors (BJTs) The bipolar junction transistor (BJT) is constructed with three doped semiconductor regions separated by two

### Q1 A) Attempt any six: i) Draw the neat symbol of N-channel and P-channel FET

Subject Code:17319 Model Answer Page1 of 27 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model

### DC Bias. Graphical Analysis. Script

Course: B.Sc. Applied Physical Science (Computer Science) Year & Sem.: Ist Year, Sem - IInd Subject: Electronics Paper No.: V Paper Title: Analog Circuits Lecture No.: 3 Lecture Title: Analog Circuits

### FIELD EFFECT TRANSISTORS MADE BY : GROUP (13)/PM

FIELD EFFECT TRANSISTORS MADE BY : GROUP (13)/PM THE FIELD EFFECT TRANSISTOR (FET) In 1945, Shockley had an idea for making a solid state device out of semiconductors. He reasoned that a strong electrical

### Subject Code: Model Answer Page No: / N

Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

### KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS Most of the content is from the textbook: Electronic devices and circuit theory,

### Physics 481 Experiment 3

Physics 481 Experiment 3 LAST Name (print) FIRST Name (print) TRANSISTORS (BJT & FET) npn BJT n-channel MOSFET 1 Experiment 3 Transistors: BJT & FET In this experiment transistor properties and transistor

### Electronics I. Last Time

(Rev. 1.0) Electronics I Lecture 28 Introduction to Field Effect Transistors (FET s) Muhammad Tilal Department of Electrical Engineering CIIT Attock Campus The logo and is the property of CIIT, Pakistan

### MOS Field-Effect Transistors (MOSFETs)

6 MOS Field-Effect Transistors (MOSFETs) A three-terminal device that uses the voltages of the two terminals to control the current flowing in the third terminal. The basis for amplifier design. The basis

### Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-7 High Frequency

### An Introduction to Bipolar Junction Transistors. Prepared by Dr Yonas M Gebremichael, 2005

An Introduction to Bipolar Junction Transistors Transistors Transistors are three port devices used in most integrated circuits such as amplifiers. Non amplifying components we have seen so far, such as

### Transistors. Bipolar Junction transistors Principle of operation Characteristics. Field effect transistors Principle of operation Characteristics

Transistors ipolar Junction transistors Principle of operation haracteristics Field effect transistors Principle of operation haracteristics ntroduction Radio based on vacuum tubes Fundamental building

### The Common Source JFET Amplifier

The Common Source JFET Amplifier Small signal amplifiers can also be made using Field Effect Transistors or FET's for short. These devices have the advantage over bipolar transistors of having an extremely

### COLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.

MOSFETS Although the base current in a transistor is usually small (< 0.1 ma), some input devices (e.g. a crystal microphone) may be limited in their output. In order to overcome this, a Field Effect Transistor

### Transistor Characteristics

Transistor Characteristics Topics covered in this presentation: Transistor Construction Transistor Operation Transistor Characteristics 1 of 15 The Transistor The transistor is a semiconductor device that

### Roll No. B.Tech. SEM I (CS-11, 12; ME-11, 12, 13, & 14) MID SEMESTER EXAMINATION, ELECTRONICS ENGINEERING (EEC-101)

F:/Academic/22 Refer/WI/ACAD/10 SHRI RAMSWAROOP MEMORIAL COLLEGE OF ENGG. & MANAGEMENT (Following Paper-ID and Roll No. to be filled by the student in the Answer Book) PAPER ID: 3301 Roll No. B.Tech. SEM

### EE70 - Intro. Electronics

EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π

### Chapter 3: TRANSISTORS. Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh

Chapter 3: TRANSISTORS Dr. Gopika Sood PG Govt. College For Girls Sector -11, Chandigarh OUTLINE Transistors Bipolar Junction Transistor (BJT) Operation of Transistor Transistor parameters Load Line Biasing

### Field Effect Transistors

Field Effect Transistors LECTURE NO. - 41 Field Effect Transistors www.mycsvtunotes.in JFET MOSFET CMOS Field Effect transistors - FETs First, why are we using still another transistor? BJTs had a small

### Department of Electrical Engineering IIT Madras

Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or

### Transistor Characteristics

Transistor Characteristics Introduction Transistors are the most recent additions to a family of electronic current flow control devices. They differ from diodes in that the level of current that can flow

### Field-Effect Transistor

Philadelphia University Faculty of Engineering Communication and Electronics Engineering Field-Effect Transistor Introduction FETs (Field-Effect Transistors) are much like BJTs (Bipolar Junction Transistors).

### Chapter 6: Field-Effect Transistors

Chapter 6: Field-Effect Transistors Islamic University of Gaza Dr. Talal Skaik MOSFETs MOSFETs have characteristics similar to JFETs and additional characteristics that make then very useful. There are

### IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)

ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) LONG QUESTIONS (10 MARKS) 1. Draw the construction diagram and explain the working of P-Channel JFET. Also draw the characteristics curve and transfer

### Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.

Current Mirrors Basic BJT Current Mirror Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror. For its analysis, we assume identical transistors and neglect

### Laboratory #5 BJT Basics and MOSFET Basics

Laboratory #5 BJT Basics and MOSFET Basics I. Objectives 1. Understand the physical structure of BJTs and MOSFETs. 2. Learn to measure I-V characteristics of BJTs and MOSFETs. II. Components and Instruments

### ITT Technical Institute. ET215 Devices 1. Unit 6 Chapter 3, Sections

ITT Technical Institute ET215 Devices 1 Unit 6 Chapter 3, Sections 3.7-3.9 Chapter 3 Section 3.7 The Bipolar Transistor as a Switch Objectives: Explain how a transistor can be used as a switch 1. Compute

### EE 330 Lecture 27. Bipolar Processes. Special Bipolar Processes. Comparison of MOS and Bipolar Proces JFET. Thyristors SCR TRIAC

EE 330 Lecture 27 Bipolar Processes Comparison of MOS and Bipolar Proces JFET Special Bipolar Processes Thyristors SCR TRIAC Review from a Previous Lecture B C E E C vertical npn B A-A Section B C E C

### Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology

K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm

### Federal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB

THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING Prepared By: Checked By: Approved By: Engr. Saqib Riaz Engr. M.Nasim Khan Dr.Noman Jafri Lecturer