Lecture (06) Bipolar Junction Transistor
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1 Lecture (06) Bipolar Junction Transistor By: Dr. Ahmed lshafee ١ Agenda BJT structure BJT operation BJT characteristics ٢
2 BJT structure The BJT is constructed with three doped semiconductor regions One type consists of two n regions separated by a p region (npn), and the other type consists of two p regions separated by an n region (pnp). The term bipolar refers to the use of both holes and electrons as current carriers in the transistor structure ٣ In order for a BJT to operate properly as an amplifier, the two pn junctions must be correctly biased with external dc voltages. In this section, we mainly use the npn transistor for illustration. The operation of the pnp is the same as for the npn except that the roles of the electrons and holes, the bias voltage polarities, and the current directions are all reversed. ٤
3 in ontrol signal ٥ out ٦
4 Biasing base emitter (B) junction is forward biased base collector (B) junction is reverse biased This condition is called forward reverse bias ٧ BJT Operation battery +ve terminal attract electrons from the collector N region. ollector N region compensate electrons depletion region, which become more and more wider. ٨
5 B battery +ve terminal start attracting the small amounts of electrons (minority carrier ) from base p type region, then starts attracting electrons from depletion region, which become thinner and thinner, then electrons start to flow from mitter N ٩ region Now base p type now how a new electrons being transferred from battey ve terminal through emitter n type. lectrons stream divided between Directly to B battery +ve terminal battery +ve terminal through ١٠ emitter n type
6 The more +ve potential applied to base from B battery +ve terminal, a more electrons being transferred from battery ve terminal, through emitter N region, a more electrons in turn flow to battery +ve terminal. ١١ Transistor urrents ١٢
7 VBB forward biases the base emitter junction, V reverse biases the base collector junction. In practice both V, and VBB derived from single battery with necessarily voltage divider on base terminal ١٣ D Beta (β D ) and D Alpha (α D ) D gain called (β D ) is the ratio between I/IB, which called h F in data sheet, range from less than 20 to 200 or higher. (α D ) is the ratio between I/I, in range from 0.95 to 0.99 or greater ١٤
8 xample β D ١٥ xample β D ١٦
9 Transistor D Model ١٧ BJT ircuit Analysis VBB, forward biases the base emitter junction, and the collector bias voltage source, V, reverse biases the base collector junction. Kirchhoff s voltage 1 ١٨
10 Ohm s low Substitute Finally 1 ١٩ 2 Ohm s Substitute But 1 2 ٢٠
11 onsider the transistor itself ٢١ xample 02 B ٢٢
12 xample 02 Answer B ٢٣ xample 02 Answer B ٢٤
13 BJT haracteristic ollector haracteristic urves B ٢٥ Applying fixed VBB, increasing V Saturation Assume that VBB is set to produce a certain value of IB and V is zero both the B junction and the B junction are forwardbiased because the base is at approximately 0.7 V while the emitter and the collector are at 0 V. I is zero. Saturation is both junctions ٢٦ are forward biased B
14 B As V is increased, V increases as the collector current increases, because V remains less than 0.7 V due to the forward biased base collector junction. ٢٧ B Active when V exceeds 0.7 V, the base collector junction becomes reverse biased BJT become active, or linear, region I levels off and remains essentially constant for a given value of IB as V continues to increase ٢٨
15 B breakdown When V reaches a sufficiently high voltage, the reverse biased basecollector junction goes into breakdown; and the collector current increases rapidly as indicated by the part of the curve to the right of point ٢٩ cutoff When IB 0, the transistor is in the cutoff region although there is a very small collector leakage current as indicated. utoff is the nonconducting state of a transistor. ٣٠
16 xample 03 ٣١ ٣٢
17 Applying fixed V, increasing VBB utoff when I B = 0, the transistor is in the cutoff region I O is extremely small, it will usually be neglected in circuit analysis V = V B O represents collector toemitter with the base open. ٣٣ Applying fixed V, increasing VBB Saturation When the base emitter junction becomes forward biased and the base current is increased, the collector current also increases (I =βi B ) V decreases as a result of more drop across the collector resistor (V = V I R). V reaches its saturation value, V(sat), base collector junction becomes forwardbiased and At the point of saturation, the (I =βi B ) is no longer valid. B ٣٤
18 D Load Line dc load line drawn on a family of curves connecting the cutoff point and the saturation point. The bottom of the load line is at ideal cutoff where I 0 and V V. ٣٥ xample 04 B 12 ٣٦
19 xample 04 B 12 V doesn t reach Vsat then transistor is in active mode, ٣٧ More About β D β D is not truly constant but varies with both collector current and with temperature ٣٨
20 Thanks,.. See you next week (ISA), ٣٩
Lecture (08) Bipolar Junction Transistor (2)
Lecture (08) ipolar Junction Transistor (2) y: Dr. Ahmed lshafee 1 JT haracteristic ollector haracteristic urves 2 Applying fixed V, increasing V Saturation Assume that V is set to produce a certain value
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