KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS

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1 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 2 (CONT D - II) DIODE APPLICATIONS Most of the content is from the textbook: Electronic devices and circuit theory, Robert L. Boylestad, Louis Nashelsky, 11 th ed, 2013

2 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 2 Example 2.15 Calculate the dc level of output for ideal eq. model. R = 2 kω V m = 10 V V m /2 v i (t) V 0 R V dc = = 3.18 V V m /2

3 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Clippers Rectification can be used to change the appearance of an applied waveform. Clippers can be used to shape the wave. Clippers are networks that employ diodes to clip away a portion of an input signal without distorting the remaining part of the applied waveform. Series clipper V v i R V 0

4 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 4 Example 2.16 Find V 0 (use ideal eq. model.) V m = 20 V V = 5 V V 1. The output is directly across the resistor R. 2. The positive region of v i and the dc supply are both applying pressure to turn the diode on. The result is that we can safely assume the diode is in the on state for the entire range of positive voltages for v i. Once the supply goes negative, it would have to exceed the dc supply voltage of 5 V before it could turn the diode off. v i R V 0

5 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 5 Example 2.17 Find V 0 (use ideal eq. model.) V m = 20 V V = 4 V R When diode is on V 0 = 4 V (v i 4 V) When diode is off V 0 = v i (v i > 4 V) v i V V 0 If we assume the simplified model the only effect of V K will be a drop the of transition level to 3.3 from 4 V.

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8 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Zener Diode circuits The analysis of networks employing Zener diodes is quite similar to the analysis of semiconductor diodes in previous sections. First the state of the diode must be determined, followed by a substitution of the appropriate model and a determination of the other unknown quantities of the network.

9 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 9 Example 2.18: Determine the reference voltages provided by the network; which uses a white LED to indicate that the power is on. What is the level of current through the LED and the power delivered by the supply? How does the power absorbed by the LED compare to that of the 6-V Zener diode? R white E E = 40 V R = 1.3 k First we have to check that there is sufficient applied voltage to turn on all the series diode elements. 1. The white LED will have a drop of about 4.1 V across it, 2. The 6-V and 3.3-V Zener diodes have a total of 9.3 V, 3. The forward-biased silicon diode has 0.7 V, for a total of 14 V. The applied 40 V is then sufficient to turn on all the elements and, one hopes, establish a proper operating current. V Z1 = 6 V Si V Z2 = 3.3 V V 02 V 01 V 01 = = 4 V V 02 = 6 4 = 10 V I R = E V 02 V LED = R 1.3 x 10 3 = ma P LED = V LED. I LED = x 10 3 = mw P Z = V Z. I Z = x 10 3 = mw

10 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 10 Example 2.19: The network is designed to limit the voltage to 20 V during the positive portion of the applied voltage and to 0 V for a negative excursion of the applied voltage. Check its operation and plot the waveform of the voltage across the system for the applied signal. Assume the system has a very high input resistance so it will not affect the behavior of the network (R system R). v i < 0.7 For the negative region of the applied signal the silicon diode is reverse biased and presents an open circuit to the series combination of elements. The result is that the full negatively applied signal will appear across the open-circuited diode and the negative voltage across the system will be v 0 = 0 V, v i R V Z = 20 V System v < v i 20.7 V For positive applied voltages less than the Zener potential of 20 V the Zener diode will be in its approximate open-circuit state, and the input signal will simply distribute itself across the elements, with the majority going to the system because it has such a high resistance level. v 0 = vi 0.7 Si v i > 20.7 V Once the voltage across the Zener diode reaches 20.7 V voltage across the system will be : v 0 = 20 V, Further increases in the applied voltage will simply appear across the series resistor with the voltage across the system and the forward-biased diode remaining fixed at 20 V and 0.7 V, respectively. The system is therefore safe from any further increases in applied voltage.

11 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 11

12 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 12 E Example 2.19: Zener diode regulator For the Zener diode network, determine V 0, V R, I Z, and P Z. (V Z = 10 V, P ZM = 30 mw power rating) a) For R L = 1.2 k b. For R L = 3 k E = 16 V R = 1 k V R R V Z = 10 V I Z R L V 0 a) b) V 0 = R L R L R 1.2 E =. 16 = V 2.2 Since V Z = 10 V zener diode will not be at the zener region It will simply act like an open circuit. V 0 = V V R = V I Z = 0 ma P Z = 0 W V 0 can be V 0 = R L R L R E = = 12 V 4 However since V Z = 10 V zener diode will be at the zener region. voltage across the zener diode will be fixed at 10V. V 0 = 10 V V R = 6 V I R = 6 ma, I RL = ma, I Z = 2.67 ma P Z = x 10 3 = 26.7 mw

13 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept BIPOLAR JUNCTION TRANSISTORS Most of the content is from the textbook: Electronic devices and circuit theory, Robert L. Boylestad, Louis Nashelsky, 11 th ed, 2013

14 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Introduction Bipolar junction transistors: Three terminal solid-state devices. Used over vacuum tubes Small and light weight No heater required Less power is absorbed No warm up period Lower operating voltages npn-type bipolar junction transistor In 1904, the vacuum-tube diode was introduced by J. A. Fleming. In the following years, radio and television provided great stimulation to the tube industry. Production rose from about 1 million tubes in 1922 to about 100 million in In the years to follow, the industry became one of primary importance, and rapid advances were made in design, manufacturing techniques, high-power and high-frequency applications, and miniaturization. On December 23, 1947, however, the electronics industry was to experience the advent of a completely new direction of interest and development. Dr. S. William Shockley, Walter H. Brattain, and John Bardeen demonstrated the amplifying action of the first transistor at the Bell Telephone Laboratories.

15 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept BJT Construction BJT: 3 layer semiconductor 0.001in V EE E p B n p C V CC V EE E n B p n C VCC pnp and npn transistors with proper DC biasings 0.15in E: Emitter B:Base C: Collector The term bipolar reflects the fact that holes and electrons participate in the injection process into the oppositely polarized material. If only one carrier is employed (electron or hole), it is considered a unipolar device.

16 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 16 DC biasing is important to establish a proper region of operation for the main tasks. e.g.: An electronics device should be first turned on then you can use it to accomplish a task. Amplifier system Its main task is amplification But you have to turn it on first.

17 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Transistor Operation Now Si pnp transistor will be analyzed here. The operation of npn tr. Is exactly the same when the role of e and e are interchanged. I C majority Mostly e of p-side p n p E C The doping of sandwich layer is less than that of outer layers 1:10 The ratio of depth 1:150 The ratio of # of e and e 1:1500 That is why majority current will be due to e. V EE depletion region - B Drawn without Base to Collector bias It looks like a diode (forward biased) Very small depletion region No significant minority carrier support for the current

18 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 18 I Cminority, I CBO p n p E C - A diode with reverse biasing Widened depletion region Majority carriers has nothing to do Small current due to minority carriers B Drawn without Base to Emitter bias depletion region V CC p n p When both forward and reverse biasing are applied the current due to majority and minority carriers will as shown E C I E = I C I B I C = I C majority I C minority I E I C V EE B I B V CC Leakage current, I C current with emmiter terminal open (I CBO )

19 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Common Based Configuration E C 1 C 2 I E I C C v i R E R C v o V EE V CC B A Common Base configuration for npn tr. Input and Output have B as common

20 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 20 To fully describe the behavior of a three-terminal device such as the common-base amplifiers requires two sets of characteristics one for the driving point or input parameters one for the output side. The input set for the common-base amplifier as shown relates an input current (I E ) to an input voltage (V BE ) for various levels of output voltage (V CB ). I E I C V BE V CB Common Base conf. IO signals DC conditions For fixed values of V CB, I E when V BE Exactly like a diode characteristic

21 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 21 The output set relates an output current ( I C ) to an output voltage (V CB ) for various levels of input current ( I E ) as shown The output or collector set of characteristics has three basic regions of interest, as indicated in the figure. the active, cutoff, and saturation regions

22 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Active region (npn) The Base-Emitter Junction is FB V BE > 0 V or even V BE > 0.7 V (for Si) The Collector-Base junction is RB V CB > 0 V When Emitter I E current increases above zero I C increases equally for active region I C I E The effect of V CB is neglible. Active region is the region normally employed for linear amplifiers 2- Cutoff region (npn) When I E = 0, I C 0 it is named as I CBO (like I S of diode) (CBO Collector to Base, when Emitter is open) The Base-Emitter Junction and Collector-Base junction are both RB V BE < 0 V or even V BE < 0.7 V (for Si) V CB > 0 V I E I C I CBO 3- Saturation region (npn) The Base-Emitter Junction and Collector-Base junction are both FB V BE > 0 V or even V BE > 0.7 V (for Si) V CB < 0 V There is an exponential rise as V CB increases toward 0 V

23 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 23 It is important to fully appreciate the statement made by the characteristic They specify that with the transistor in the on or active state the voltage from base to emitter will be 0.7 V (for Si) at any level of emitter current as controlled by the external network. In fact, at the first encounter of any transistor configuration in the dc mode, one can now immediately specify that the voltage from base to emitter is 0.7 V (for Si) if the device is in the active region a very important conclusion for the dc analysis to follow.

24 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 24 Alpha (α) In the DC mode : the levels of I C and I E due to the majority carriers are related by a quantity called alpha and defined by the following equation: α DC = I C I E Where I C and I E are the levels of current at the point of operation. α is typically changing 0.9 to 0.998, although the V CB ~ I C graphic suggest that can be assumed as 1 I E I C Alpha is defined solely for the majority carriers the equation is actually, I C = ai E I CBO In the AC Mode: For AC situations where the point of operation moves on the characteristic curve, an AC alpha is defined by Mostly α DC and α AC are very close. α AC = I C I E VCB is constant

25 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 25 The proper biasing for Common base configuration B npn - V CB I B V BE - C E I C I E - V CB > 0 V BE > 0 V CE V CB I B V BE V CB < 0 V BE < 0 I E = I C and assuming for the moment that I B 0 μa B pnp - - C E I C I E - V CE Junction Mode BE CB Cutoff RB RB Active FB RB Saturation FB FB

26 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Common Emitter Configuration Most frequently used configuration It is called the common-emitter configuration because the emitter is common to both the input and output terminals (in this case common to both the base and collector terminals). Two sets of characteristics are again necessary to describe fully the behavior of the common-emitter configuration: one for the input or base emitter circuit and one for the output or collector emitter circuit. I B I C V BE V CE B Common Emitter conf. IO signals (DC conditions)

27 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 27 R C C 2 C 1 R B I C V CC v o V BB I E v i A Common Emitter configuration for npn tr. Input and Output have E as common

28 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 28

29 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Active region (npn) The Base-Emitter Junction is FB V BE > 0 V or even V BE > 0.7 V (for Si) The Collector-Base junction is RB V CB > 0 V I C and I B are realted by a quantity The effect of V CE is neglible. Active region is the region normally employed for linear amplifiers 2- Cutoff region (npn) I C is not equal to 0 when I B = 0. it is named as I CEO (like I S of diode) (CEO Collector to Emitter, when Base is open) The Base-Emitter Junction and Collector-Base junction are both RB V BE < 0 V or even V BE < 0.7 V (for Si) V CB > 0 V I CEO For Common Base configuration: I C = αi E I CBO I C = α(i C I B ) I CBO I C = α 1 α I B I CBO 1 α I CEO = I CBO 1 α I B =0 μa I C = I CEO practically I C = 0 ma

30 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Saturation region (npn) The Base-Emitter Junction and Collector-Base junction are both FB V BE > 0 V or even V BE > 0.7 V (for Si) V CB < 0 V There is an exponential rise as V CB increases toward 0 V Beta (β ) In the DC mode : the levels of I B and I C due to the majority carriers are related by a quantity called beta and defined by the following equation: β DC = I C I B Where I C and I E are the levels of current at the point of operation. β is typically changing 50 to 400, h fe can be used for β DC (Forward current amplification in Emitter Configuration) for AC hybrid equivalent of a tr. In the AC Mode: For AC situations where the point of operation moves on the characteristic curve, an AC alpha is defined by Mostly α DC and α AC are very close. β AC = I C I B VCE is constant

31 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 31 The relationship between α and β: I E = I C I B I C α = I C I C β α = β β 1 Beta is a particularly important parameter because it provides a direct link between current levels of the input and output circuits for a common-emitter configuration. That is, I C = βi B and since I E = I C I B = βi B I B we have I E = β 1 I B The proper biasing for Common Emitter configuration B npn - V CB I B V BE - C E I C I E - V CB > 0 V BE > 0 V CE B pnp - V CB I B V BE - C E I C I E - V CB < 0 V BE < 0 V CE Junction Mode BE CB Cutoff RB RB Active FB RB Saturation FB FB I E = I C I B or I E = β 1 I B

32 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Common Collector Configuration The third and final transistor configuration is the common-collector configuration, shown in the figure with the proper current directions and voltage notation. The common-collector configuration is used primarily for impedance-matching purposes since it has a high input impedance and low output impedance, opposite to that of the common-base and common emitter configurations.

33 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept Limits of Operation For each transistor there is a region of operation on the characteristics that will ensure that the maximum ratings are not being exceeded and the output signal exhibits minimum distortion. Such a region has been defined for the transistor characteristics All of the limits of operation are defined on a typical transistor specification sheet Q1 If P C = 300 mw MAX For Q1: I C = I CMAX = 50 ma V CE should be 6 V Q2 For Q2: V CE = V CEMAX = 20 V I C should be 15 ma

34 KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept DC BIASING BJTS Most of the content is from the textbook: Electronic devices and circuit theory, Robert L. Boylestad, Louis Nashelsky, 11 th ed, 2013

35 4.1 Introduction

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