MOS Field Effect Transistors

Size: px
Start display at page:

Download "MOS Field Effect Transistors"

Transcription

1 MOS Field Effect Transistors A gate contact gate interconnect n polysilicon gate source contacts W active area (thin oxide area) polysilicon gate contact metal interconnect drain contacts A bulk contact source interconnect deposited oxide source interconnect (a) n polysilicon gate edge of active area bulk drain interconnect interconnect field oxide n source diffusion [ p-type ] L gate oxide drain interconnect n drain diffusion L diff p (b)

2 MOSFET Circuit Symbols Two complementary devices (each with two symbols): both are very useful p-substrate (n-type channel under gate oxide) n-substrate (p-type channel under gate oxide) G n _ D V DS > 0 B _ V BS S G n D S B _ G V SG p S V _ SB B V SD > 0 D G p S D B (a) n-channel MOSFET (b) p-channel MOSFET Drain n Source p Gate p Bulk or Body Gate n Bulk or Body Source n Drain p Four electrical terminals: source (lowest potential for n-channel highest for p- channel) drain gate and bulk. Basic concept: inversion layer (called the channel) formed under gate between source and drain enables drift current

3 n-channel MOSFET Drain Characteristics Set-up: I G = 0 V DB = V DS > 0 to reverse-bias pn junctions to bulk. Measurement scheme: short bulk to source to make it a three terminal device vary gate voltage drain voltage and see effect on drain current. D n ( V DS ) G S B V DS (a) = 3.5 V 600 n (µa) (triode region) V DS = V Tn = 1 V constant current (saturation) region = 3 V = 2.5 = V (cutoff region) = 2 V = 1.5 V (b) 5 V DS (V)

4 p-channel MOSFET Drain Characteristics Set-up: I G = 0 V BD = V SD > 0 to reverse-bias pn junctions to bulk. Measurement scheme: short bulk to source to make it a three terminal device vary gate voltage drain voltage and see effect on drain current - S V SG _ V SD G B V G p _ D V D 5 V (V SG V SD ) (a) V SG = 3.5 V 300 p (µa) (triode region) V SD = V SG V Tp = V SG 1 V V SG = 3 V (saturation region) V SG = 25 V SG = V (cutoff region) V SG = 2 V V SG = 1.5 V (b) 5 V SD (V)

5 Quantitative MOSFET Step 1. Connect the MOS capacitor results for the electron charge in the inversion layer Q N to the drain current. V DS _ n source polysilicon gate y = y * 0 x metal interconnect to gate n polysilicon gate y p-type metal interconnect to bulk (a) W y* t ox E y (y * ) n drain gate oxide x channel electrons at position y = y * drifting with velocity v y (y * ) from source to drain x (b)

6 Drift Current Equation Drift current for electrons in the channel: J y ( x y) = qnx ( y)v y () y The drain current at position y is the integral of the drift current density across the cross section. Since the conventional direction of is opposite to the direction of the y axis we insert a minus sign: x x = W J y ( x y)dx = Wv y () y qn( x y)dx 0 0 The integral is the negative of the electron charge in the channel per unit area at point y. The symbol for this quantity is - Q N (y): = Wv y ()Q y N () y Note that isn t a function of the position in the channel

7 MOSFET DC Model: a First Pass metal interconnect to gate V GS _ n polysilicon gate Start simple -- small V DS makes the channel uniform V DS (< 0.1 V) n source 0 x y Q N p-type metal interconnect to bulk y = L n drain Channel charge: MOS capacitor in inversion with V GB =. Q N = C ox ( V GB V Tn ) = C ox ( V Tn ) Drift velocity: electric field is just E y = - V DS / L so v y = - µ n (-V DS / L) Drain current equation for V DS small... say less than 0.1 V. W = µ n C ox ---- ( VGS V L Tn )V DS Note that is proportional to V DS with channel resistance under gate control. This voltage controlled resistor region is sometimes useful.

8 Triode Region metal interconnect to gate n polysilicon gate Increase V DS -- channel charge becomes a function of position y. V DS _ n source 0 y x Q N (y) p-type metal interconnect to bulk n drain y = L First pass: approximate the drain current equation by taking averages of the channel charge and the drift velocity (Second pass: Section 4.4 (not assigned)) WQ N v y Average drift velocity: still use µ n (V DS / L) -- which is a very rough approximation.

9 Triode Region (Cont.) Next approximate the average channel charge by averaging Q N (y=0) at the source end and Q N (y=l) at the drain end of the channel: Q N ( y=0) = C ox ( V Tn ) At the drain end the positive drain voltage reduces the magnitude of the channel charge... why? The effect can be approximated by using V GD (the drop from drain to channel at y = L) -- Q N ( y=l) = C ox ( V GD V Tn ) = C ox ( V DS V Tn ) Note that V GD = - V DS > V Tn in order for there to be a channel left at the drain end. Substituting we derive the equation for the triode region which is defined by - V DS > V Tn and > V Tn. = µ n C W ox ---- ( VGS V L Tn V DS 2)V DS

10 Drain Characteristics Example: µ n C ox (W/L) = 50 µa/v 2 V Tn = 1 V and (W/L) = 4. (µa) = 4 V SAT = 3 V 200 = 2 V < V Tn V DS (V) What happens when V DS > - V Tn = V DS(sat)? Q N (y = L) = 0! Initial thought is that the lack of a channel at the drain end means that must drop to zero... WRONG! Drain terminal loses control over channel --> drain current saturates and remains constant (to first approximation) at the value given by V DS = V DS(sat).

11 Saturation Region When > V Tn and V DS > V DS(sat) = - V Tn the drain current is: W = ( sat ) = µ n C ox ( VGS V 2L Tn ) 2 V DSSAT metal interconnect to gate I V DSAT GS _ n polysilicon gate n source 0 y n drain x Q N (y = L) = 0 p-type metal interconnect to bulk Full model: (µa) triode region Eq. (4.17) SAT = 4 V vs. V DSSAT constant current (saturation) region Eq. (4.21) = 3 V 200 = 2 V V DS (V) < 1 V

12 MOSFET Circuit Models n-channel MOSFET drain current in cutoff triode and saturation: = 0 A ( V Tn ) = µ n C ox ( W L) [ V Tn ( V DS 2) ]( 1 λ n V DS )V DS ( VGS V Tn V DS V Tn ) = µ n C ox ( W ( 2L) )( V Tn ) 2 ( 1 λ n V DS ) ( VGS V Tn V DS V Tn ) Numerical values: µ n is a function of along the channel and is much less than the mobility in the bulk (typical value 215 cm 2 /(Vs) ) -- therefore we consider that µ n C ox is a measured parameter. Typical value: µ n C ox = 50 µav -2 λ n sometimes called the channel length modulation parameter increases as the channel length L is reduced: 0.1µmV 1 λ n L The triode region equation has (1 λ n V DS ) added in order to avoid a jump at the boundary with the saturation region. For hand calculation of DC voltages and currents this term is usually omitted from. V Tn = threshold voltage = V typically for an n-channel MOSFET.

13 Backgate Effect The threshold voltage is a function of the bulk-to-source voltage V BS through the backgate effect. V Tn = V TOn γ n ( V BS 2φ p 2φ p ) where V TO is the threshold voltage with V BS = 0 and γ is the backgate effect parameter γ n = ( 2qε s N a ) C ox Physical origin: V BS (a negative voltage to avoid forward biasing the bulk-tosource pn junction) increases the depletion width which increases the bulk charge and thus the threshold voltage. = ( V DS V BS ) since V Tn = V Tn (V BS ) Common situation is that V BS = 0 by electrically shorting the source to the bulk (either the substrate or a deep diffused region called a well) source and bulk terminals are shorted together --> no backgate effect p n source p well n substrate n drain For this case V Tn = V TOn.

14 p-channel MOSFETs Structure is complementary to the n-channel MOSFET In a CMOS technology one or the other type of MOSFET is built into a well -- a deep diffused region -- so that there are electrically isolated bulk regions in the same substrate n-channel p-channel MOSFET MOSFET (a) A A common bulk contact for all n-channel MOSFETs (to ground or to the supply) isolated bulk contact with p-channel MOSFET shorted to source (b) p n source n drain p drain p source n p-type substrate n well

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body

More information

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known

More information

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor

More information

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic.

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic. Digital Electronics Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region Positive Logic Logic 1 Negative Logic Logic 0 Voltage Transition Region Transition

More information

Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor

Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Introduction Why we call it Transistor? The name came as an

More information

MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.

MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. MOSFET Terminals The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. For an n-channel MOSFET, the SOURCE is biased at a lower potential (often

More information

Three Terminal Devices

Three Terminal Devices Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering

More information

Solid State Device Fundamentals

Solid State Device Fundamentals Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)

More information

Field Effect Transistors (FET s) University of Connecticut 136

Field Effect Transistors (FET s) University of Connecticut 136 Field Effect Transistors (FET s) University of Connecticut 136 Field Effect Transistors (FET s) FET s are classified three ways: by conduction type n-channel - conduction by electrons p-channel - conduction

More information

MOS Field-Effect Transistors (MOSFETs)

MOS Field-Effect Transistors (MOSFETs) 6 MOS Field-Effect Transistors (MOSFETs) A three-terminal device that uses the voltages of the two terminals to control the current flowing in the third terminal. The basis for amplifier design. The basis

More information

Lecture-45. MOS Field-Effect-Transistors Threshold voltage

Lecture-45. MOS Field-Effect-Transistors Threshold voltage Lecture-45 MOS Field-Effect-Transistors 7.4. Threshold voltage In this section we summarize the calculation of the threshold voltage and discuss the dependence of the threshold voltage on the bias applied

More information

Week 7: Common-Collector Amplifier, MOS Field Effect Transistor

Week 7: Common-Collector Amplifier, MOS Field Effect Transistor EE 2110A Electronic Circuits Week 7: Common-Collector Amplifier, MOS Field Effect Transistor ecture 07-1 Topics to coer Common-Collector Amplifier MOS Field Effect Transistor Physical Operation and I-V

More information

Improved Inverter: Current-Source Pull-Up. MOS Inverter with Current-Source Pull-Up. What else could be connected between the drain and V DD?

Improved Inverter: Current-Source Pull-Up. MOS Inverter with Current-Source Pull-Up. What else could be connected between the drain and V DD? Improved Inverter: Current-Source Pull-Up MOS Inverter with Current-Source Pull-Up What else could be connected between the drain and? Replace resistor with current source I SUP roc i D v IN v OUT Find

More information

I E I C since I B is very small

I E I C since I B is very small Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while

More information

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model Week 9a OUTLINE MOSFET I vs. V GS characteristic Circuit models for the MOSFET resistive switch model small-signal model Reading Rabaey et al.: Chapter 3.3.2 Hambley: Chapter 12 (through 12.5); Section

More information

Semiconductor Physics and Devices

Semiconductor Physics and Devices Metal-Semiconductor and Semiconductor Heterojunctions The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is one of two major types of transistors. The MOSFET is used in digital circuit, because

More information

Design cycle for MEMS

Design cycle for MEMS Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor

More information

NAME: Last First Signature

NAME: Last First Signature UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT

More information

Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013

Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013 Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor In this chapter, we will: Study and understand the operation and characteristics of the various types

More information

97.398*, Physical Electronics, Lecture 21. MOSFET Operation

97.398*, Physical Electronics, Lecture 21. MOSFET Operation 97.398*, Physical Electronics, Lecture 21 MOSFET Operation Lecture Outline Last lecture examined the MOSFET structure and required processing steps Now move on to basic MOSFET operation, some of which

More information

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Lecture 15 Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Outline MOSFET transistors Introduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Comparison between JFET and

More information

Review Sheet for Midterm #2

Review Sheet for Midterm #2 Review Sheet for Midterm #2 Brian Bircumshaw brianb@eecs.berkeley.edu 1 Miterm #1 Review See Table 1 on the following page for a list of the most important equations you should know from Midterm #1. 2

More information

EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters

EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters Dept. of Electrical and Computer Engineering University of California, Davis March 18, 2010 Reading: Rabaey Chapter 3 [1]. Reference: Kang

More information

LECTURE 09 LARGE SIGNAL MOSFET MODEL

LECTURE 09 LARGE SIGNAL MOSFET MODEL Lecture 9 Large Signal MOSFET Model (5/14/18) Page 9-1 LECTURE 9 LARGE SIGNAL MOSFET MODEL LECTURE ORGANIZATION Outline Introduction to modeling Operation of the MOS transistor Simple large signal model

More information

Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor

Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,

More information

Topic 2. Basic MOS theory & SPICE simulation

Topic 2. Basic MOS theory & SPICE simulation Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/

More information

Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor

Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,

More information

Field Effect Transistor (FET) FET 1-1

Field Effect Transistor (FET) FET 1-1 Field Effect Transistor (FET) FET 1-1 Outline MOSFET transistors ntroduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Biasing Circuits and Examples Comparison between JFET and epletion-type

More information

Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1

Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Lecture 13 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Outline Continue MOSFET Qualitative Operation epletion-type MOSFET Characteristics Biasing Circuits and Examples Enhancement-type

More information

ECEN325: Electronics Summer 2018

ECEN325: Electronics Summer 2018 ECEN325: Electronics Summer 2018 Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Sam Palermo Analog & Mixed-Signal Center Texas A&M University Announcements & Reading H5 due today Exam 2 on

More information

8. Characteristics of Field Effect Transistor (MOSFET)

8. Characteristics of Field Effect Transistor (MOSFET) 1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors

More information

UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences.

UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences. UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences Discussion #9 EE 05 Spring 2008 Prof. u MOSFETs The standard MOSFET structure is shown

More information

EE301 Electronics I , Fall

EE301 Electronics I , Fall EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials

More information

Lecture 24 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) The Long Metal-Oxide-Semiconductor Field-Effect Transistor

Lecture 24 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) The Long Metal-Oxide-Semiconductor Field-Effect Transistor 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 24-1 Lecture 24 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) The Long Metal-Oxide-Semiconductor Field-Effect

More information

Session 10: Solid State Physics MOSFET

Session 10: Solid State Physics MOSFET Session 10: Solid State Physics MOSFET 1 Outline A B C D E F G H I J 2 MOSCap MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor: Al (metal) SiO2 (oxide) High k ~0.1 ~5 A SiO2 A n+ n+ p-type Si (bulk)

More information

Microelectronics Circuit Analysis and Design

Microelectronics Circuit Analysis and Design Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 In this chapter, we will: Study and understand the operation

More information

MOSFET & IC Basics - GATE Problems (Part - I)

MOSFET & IC Basics - GATE Problems (Part - I) MOSFET & IC Basics - GATE Problems (Part - I) 1. Channel current is reduced on application of a more positive voltage to the GATE of the depletion mode n channel MOSFET. (True/False) [GATE 1994: 1 Mark]

More information

Experiment 3. 3 MOSFET Drain Current Modeling. 3.1 Summary. 3.2 Theory. ELEC 3908 Experiment 3 Student#:

Experiment 3. 3 MOSFET Drain Current Modeling. 3.1 Summary. 3.2 Theory. ELEC 3908 Experiment 3 Student#: Experiment 3 3 MOSFET Drain Current Modeling 3.1 Summary In this experiment I D vs. V DS and I D vs. V GS characteristics are measured for a silicon MOSFET, and are used to determine the parameters necessary

More information

Sub-Threshold Region Behavior of Long Channel MOSFET

Sub-Threshold Region Behavior of Long Channel MOSFET Sub-threshold Region - So far, we have discussed the MOSFET behavior in linear region and saturation region - Sub-threshold region is refer to region where Vt is less than Vt - Sub-threshold region reflects

More information

problem grade total

problem grade total Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Name: Recitation: November 16, 2005 Quiz #2 problem grade 1 2 3 4 total General guidelines (please read carefully before starting):

More information

Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology

Digital Electronics. By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology K. N. Toosi University of Technology Chapter 7. Field-Effect Transistors By: FARHAD FARADJI, Ph.D. Assistant Professor, Electrical and Computer Engineering, K. N. Toosi University of Technology http://wp.kntu.ac.ir/faradji/digitalelectronics.htm

More information

Chapter 4. CMOS Cascode Amplifiers. 4.1 Introduction. 4.2 CMOS Cascode Amplifiers

Chapter 4. CMOS Cascode Amplifiers. 4.1 Introduction. 4.2 CMOS Cascode Amplifiers Chapter 4 CMOS Cascode Amplifiers 4.1 Introduction A single stage CMOS amplifier cannot give desired dc voltage gain, output resistance and transconductance. The voltage gain can be made to attain higher

More information

MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I

MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I MEASUREMENT AND INSTRUMENTATION STUDY NOTES The MOSFET The MOSFET Metal Oxide FET UNIT-I As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available

More information

EE70 - Intro. Electronics

EE70 - Intro. Electronics EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π

More information

Show the details of the derivation for Eq. (6.33) for the PMOS device.

Show the details of the derivation for Eq. (6.33) for the PMOS device. Problem 6.11 Rahul Mhatre Show the details of the derivation for Eq. (6.33) for the PMOS device. Since the device is a PMOS MOSFET, source and drain are p+ regions and the substrate is an nwell. Therefore,

More information

6.976 High Speed Communication Circuits and Systems Lecture 5 High Speed, Broadband Amplifiers

6.976 High Speed Communication Circuits and Systems Lecture 5 High Speed, Broadband Amplifiers 6.976 High Speed Communication Circuits and Systems Lecture 5 High Speed, Broadband Amplifiers Michael Perrott Massachusetts Institute of Technology Copyright 2003 by Michael H. Perrott Broadband Communication

More information

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth

More information

VLSI Design I. The MOSFET model Wow!

VLSI Design I. The MOSFET model Wow! VLSI Design I The MOSFET model Wow! Are device models as nice as Cindy? Overview The large signal MOSFET model and second order effects. MOSFET capacitances. Introduction in fet process technology Goal:

More information

Lecture 4. MOS transistor theory

Lecture 4. MOS transistor theory Lecture 4 MOS transistor theory 1.7 Introduction: A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage

More information

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH) EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND

More information

ECSE-6300 IC Fabrication Laboratory Lecture 9 MOSFETs. Lecture Outline

ECSE-6300 IC Fabrication Laboratory Lecture 9 MOSFETs. Lecture Outline ECSE-6300 IC Fabrication Laboratory Lecture 9 MOSFETs Prof. Rensselaer Polytechnic Institute Troy, NY 12180 Office: CII-6229 Tel.: (518) 276-2909 e-mails: luj@rpi.edu http://www.ecse.rpi.edu/courses/s18/ecse

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits Mosfet Review Sections of Chapter 3 &4 A. Kruger Mosfet Review, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width 1 10-6 m or less Thickness 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor

More information

Chapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier

Chapter 5. Operational Amplifiers and Source Followers. 5.1 Operational Amplifier Chapter 5 Operational Amplifiers and Source Followers 5.1 Operational Amplifier In single ended operation the output is measured with respect to a fixed potential, usually ground, whereas in double-ended

More information

6.776 High Speed Communication Circuits Lecture 6 MOS Transistors, Passive Components, Gain- Bandwidth Issue for Broadband Amplifiers

6.776 High Speed Communication Circuits Lecture 6 MOS Transistors, Passive Components, Gain- Bandwidth Issue for Broadband Amplifiers 6.776 High Speed Communication Circuits Lecture 6 MOS Transistors, Passive Components, Gain- Bandwidth Issue for Broadband Amplifiers Massachusetts Institute of Technology February 17, 2005 Copyright 2005

More information

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages Outline Common drain amplifier Common gate amplifier Reading Assignment: Howe and Sodini; Chapter 8, Sections 8.78.9 6.02 Spring 2009 . Common

More information

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-7 High Frequency

More information

Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs)

Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Device Structure N-Channel MOSFET Providing electrons Pulling electrons (makes current flow) + + + Apply positive voltage to gate: Drives away

More information

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap MTLE-6120: Advanced Electronic Properties of Materials 1 Semiconductor transistors for logic and memory Reading: Kasap 6.6-6.8 Vacuum tube diodes 2 Thermionic emission from cathode Electrons collected

More information

Chapter 1. Introduction

Chapter 1. Introduction EECS3611 Analog Integrated Circuit esign Chapter 1 Introduction EECS3611 Analog Integrated Circuit esign Instructor: Prof. Ebrahim Ghafar-Zadeh, Prof. Peter Lian email: egz@cse.yorku.ca peterlian@cse.yorku.ca

More information

Solid State Devices- Part- II. Module- IV

Solid State Devices- Part- II. Module- IV Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the

More information

MOS TRANSISTOR THEORY

MOS TRANSISTOR THEORY MOS TRANSISTOR THEORY Introduction A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage applied to the

More information

55:041 Electronic Circuits

55:041 Electronic Circuits 55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor

More information

CMOS Analog Design. Introduction. Prof. Dr. Bernhard Hoppe LECTURE NOTES. Prof. Dr. Hoppe CMOS Analog Design 2

CMOS Analog Design. Introduction. Prof. Dr. Bernhard Hoppe LECTURE NOTES. Prof. Dr. Hoppe CMOS Analog Design 2 CMOS Analog Design LECTURE NOTES Prof. Dr. Bernhard Hoppe Introduction Prof. Dr. Hoppe CMOS Analog Design 2 Analog Integrated Circuits Design Steps: 1. Definition 2. Implementation 3. Simulation 4. Geometrical

More information

FET. Field Effect Transistors ELEKTRONIKA KONTROL. Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya. p + S n n-channel. Gate. Basic structure.

FET. Field Effect Transistors ELEKTRONIKA KONTROL. Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya. p + S n n-channel. Gate. Basic structure. FET Field Effect Transistors ELEKTRONIKA KONTROL Basic structure Gate G Source S n n-channel Cross section p + p + p + G Depletion region Drain D Eka Maulana, ST, MT, M.Eng. Universitas Brawijaya S Channel

More information

MOSFET FUNDAMENTALS OPERATION & MODELING

MOSFET FUNDAMENTALS OPERATION & MODELING MOSFET FUNDAMENTALS OPERATION & MODELING MOSFET MODELING AND OPERATION MOSFET Fundamentals MOSFET Physical Structure and Operation MOSFET Large Signal I-V Characteristics Subthreshold Triode Saturation

More information

ECE 440 Lecture 39 : MOSFET-II

ECE 440 Lecture 39 : MOSFET-II ECE 440 Lecture 39 : MOSFETII Class Outline: MOSFET Qualitative Effective Mobility MOSFET Quantitative Things you should know when you leave Key Questions How does a MOSFET work? Why does the channel mobility

More information

Analog IC Design. Lecture 1,2: Introduction & MOS transistors. Henrik Sjöland. Dept. of Electrical and Information Technology

Analog IC Design. Lecture 1,2: Introduction & MOS transistors. Henrik Sjöland. Dept. of Electrical and Information Technology Analog IC Design Lecture 1,2: Introduction & MOS transistors Henrik.Sjoland@eit.lth.se Part 1: Introduction Analogue IC Design (7.5hp, lp2) CMOS Technology Analog building blocks in CMOS Single- and multiple

More information

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) INTRODUCTION - FETs are voltage controlled devices as opposed to BJT which are current controlled. - There are two types of FETs. o Junction FET (JFET) o Metal

More information

INTRODUCTION TO ELECTRONICS EHB 222E

INTRODUCTION TO ELECTRONICS EHB 222E INTRODUCTION TO ELECTRONICS EHB 222E MOS Field Effect Transistors (MOSFETS II) MOSFETS 1/ INTRODUCTION TO ELECTRONICS 1 MOSFETS Amplifiers Cut off when v GS < V t v DS decreases starting point A, once

More information

Basic Fabrication Steps

Basic Fabrication Steps Basic Fabrication Steps and Layout Somayyeh Koohi Department of Computer Engineering Adapted with modifications from lecture notes prepared by author Outline Fabrication steps Transistor structures Transistor

More information

ITT Technical Institute. ET215 Devices 1. Unit 8 Chapter 4, Sections

ITT Technical Institute. ET215 Devices 1. Unit 8 Chapter 4, Sections ITT Technical Institute ET215 Devices 1 Unit 8 Chapter 4, Sections 4.4 4.5 Chapter 4 Section 4.4 MOSFET Characteristics A Metal-Oxide semiconductor field-effect transistor is the other major category of

More information

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02 EE 5611 Introduction to Microelectronic Technologies Fall 2014 Thursday, September 04, 2014 Lecture 02 1 Lecture Outline Review on semiconductor materials Review on microelectronic devices Example of microelectronic

More information

(Refer Slide Time: 02:05)

(Refer Slide Time: 02:05) Electronics for Analog Signal Processing - I Prof. K. Radhakrishna Rao Department of Electrical Engineering Indian Institute of Technology Madras Lecture 27 Construction of a MOSFET (Refer Slide Time:

More information

Chapter 6: Field-Effect Transistors

Chapter 6: Field-Effect Transistors Chapter 6: Field-Effect Transistors Islamic University of Gaza Dr. Talal Skaik MOSFETs MOSFETs have characteristics similar to JFETs and additional characteristics that make then very useful. There are

More information

D n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN

D n ox GS THN DS GS THN DS GS THN. D n ox GS THN DS GS THN DS GS THN Name: EXAM #3 Closed book, closed notes. Calculators may be used for numeric computations only. All work is to be your own - show your work for maximum partial credit. Data: Use the following data in all

More information

HW#3 Solution. Dr. Parker. Spring 2014

HW#3 Solution. Dr. Parker. Spring 2014 HW#3 olution r. Parker pring 2014 Assume for the problems below that V dd = 1.8 V, V tp0 is -.7 V. and V tn0 is.7 V. V tpbodyeffect is -.9 V. and V tnbodyeffect is.9 V. Assume ß n (k n )= 219.4 W/L µ A(microamps)/V

More information

Session 2 MOS Transistor for RF Circuits

Session 2 MOS Transistor for RF Circuits Session 2 MOS Transistor for RF Circuits Session Speaker Chandramohan P. Session Contents MOS transistor basics MOS equivalent circuit Single stage amplifiers Opamp design Session objectives To understand

More information

Course Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)

Course Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT) Course Outline 1. Chapter 1: Signals and Amplifiers 1 2. Chapter 3: Semiconductors 3. Chapter 4: Diodes 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)

More information

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET

Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage

More information

Laboratory #5 BJT Basics and MOSFET Basics

Laboratory #5 BJT Basics and MOSFET Basics Laboratory #5 BJT Basics and MOSFET Basics I. Objectives 1. Understand the physical structure of BJTs and MOSFETs. 2. Learn to measure I-V characteristics of BJTs and MOSFETs. II. Components and Instruments

More information

MOSFET in ON State (V GS > V TH )

MOSFET in ON State (V GS > V TH ) ndian nstitute of Technology Jodhpur, Year 08 Analog Electronics (ourse ode: EE34) ecture 8 9: MOSFETs, Biasing ourse nstructor: Shree Prakash Tiwari Email: sptiwari@iitj.ac.in Webpage: http://home.iitj.ac.in/~sptiwari/

More information

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd FET Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd FET (field-effect transistor) unipolar devices - unlike BJTs that use both electron and hole current, they operate only with one type

More information

FET(Field Effect Transistor)

FET(Field Effect Transistor) Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,

More information

Field Effect Transistors

Field Effect Transistors Field Effect Transistors LECTURE NO. - 41 Field Effect Transistors www.mycsvtunotes.in JFET MOSFET CMOS Field Effect transistors - FETs First, why are we using still another transistor? BJTs had a small

More information

Metal-Oxide-Silicon (MOS) devices PMOS. n-type

Metal-Oxide-Silicon (MOS) devices PMOS. n-type Metal-Oxide-Silicon (MOS devices Principle of MOS Field Effect Transistor transistor operation Metal (poly gate on oxide between source and drain Source and drain implants of opposite type to substrate.

More information

LECTURE 19 DIFFERENTIAL AMPLIFIER

LECTURE 19 DIFFERENTIAL AMPLIFIER Lecture 19 Differential Amplifier (6/4/14) Page 191 LECTURE 19 DIFFERENTIAL AMPLIFIER LECTURE ORGANIZATION Outline Characterization of a differential amplifier Differential amplifier with a current mirror

More information

Why Scaling? CPU speed Chip size R, C CPU can increase speed by reducing occupying area.

Why Scaling? CPU speed Chip size R, C CPU can increase speed by reducing occupying area. Why Scaling? Higher density : Integration of more transistors onto a smaller chip : reducing the occupying area and production cost Higher Performance : Higher current drive : smaller metal to metal capacitance

More information

Experiment 5 Single-Stage MOS Amplifiers

Experiment 5 Single-Stage MOS Amplifiers Experiment 5 Single-Stage MOS Amplifiers B. Cagdaser, H. Chong, R. Lu, and R. T. Howe UC Berkeley EE 105 Fall 2005 1 Objective This is the first lab dealing with the use of transistors in amplifiers. We

More information

EE5320: Analog IC Design

EE5320: Analog IC Design EE5320: Analog IC Design Handout 3: MOSFETs Saurabh Saxena & Qadeer Khan Indian Institute of Technology Madras Copyright 2018 by EE6:Integrated Circuits & Systems roup @ IIT Madras Overview Transistors

More information

ECE 340 Lecture 40 : MOSFET I

ECE 340 Lecture 40 : MOSFET I ECE 340 Lecture 40 : MOSFET I Class Outline: MOS Capacitance-Voltage Analysis MOSFET - Output Characteristics MOSFET - Transfer Characteristics Things you should know when you leave Key Questions How do

More information

Digital circuits. Bởi: Sy Hien Dinh

Digital circuits. Bởi: Sy Hien Dinh Digital circuits Bởi: Sy Hien Dinh This module presents the basic concepts of MOSFET digital logic circuits. We will examine NMOS logic circuits, which contain only n-channel transistors, and complementary

More information

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering

Summary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering Summary Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET A/Lectr. Khalid Shakir Dept. Of Electrical Engineering College of Engineering Maysan University Page 1-21 Summary The MOSFET The metal oxide

More information

ECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline:

ECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline: ECE 340 Lecture 37 : Metal- Insulator-Semiconductor FET Class Outline: Metal-Semiconductor Junctions MOSFET Basic Operation MOS Capacitor Things you should know when you leave Key Questions What is the

More information

EECE2412 Final Exam. with Solutions

EECE2412 Final Exam. with Solutions EECE2412 Final Exam with Solutions Prof. Charles A. DiMarzio Department of Electrical and Computer Engineering Northeastern University Fall Semester 2010 My file 11480/exams/final General Instructions:

More information

EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017

EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017 EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017 Objective: The objective of this laboratory experiment is to become more familiar with the operation of

More information

1 Introduction to analog CMOS design

1 Introduction to analog CMOS design 1 Introduction to analog CMOS design This chapter begins by explaining briefly why there is still a need for analog design and introduces its main tradeoffs. The need for accurate component modeling follows.

More information

Homework Assignment 07

Homework Assignment 07 Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.

More information

Learning Outcomes. Spiral 2-6. Current, Voltage, & Resistors DIODES

Learning Outcomes. Spiral 2-6. Current, Voltage, & Resistors DIODES 26.1 26.2 Learning Outcomes Spiral 26 Semiconductor Material MOS Theory I underst why a diode conducts current under forward bias but does not under reverse bias I underst the three modes of operation

More information

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number

More information

6.012 Microelectronic Devices and Circuits

6.012 Microelectronic Devices and Circuits Page 1 of 13 YOUR NAME Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 6.012 Microelectronic Devices and Circuits Final Eam Closed Book: Formula sheet provided;

More information