Contents. Compact Models of MOS Transistors

Transcription

1 Part I Compact Models of MOS Transistors 1 Surface-Potential-Based Compact Model of Bulk MOSFET... 3 Gennady Gildenblat, Weimin Wu, Xin Li, Ronald van Langevelde, Andries J. Scholten, Geert D.J. Smit, and Dirk B.M. Klaassen 1.1 Introduction SurfacePotentialEquation Symmetric Linearization Method The Effective Channel Mobility VelocitySaturation LateralDopingNon-uniformity Punch-Through Effect and Vertical Doping Non-uniformity The Extrinsic Model OverlapRegionCharges Parasitic Resistances Impact Ionization Current Gate Tunneling Current Gate-Induced Drain Leakage Current Surface-Potential-Based Noise Model FlickerNoise ThermalNoise Other Noise Sources Conclusions References PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs Weimin Wu, Wei Yao, and Gennady Gildenblat 2.1 Introduction PD-SOIFloatingBodyEffectModeling Impact Ionization ix

2 x JunctionDiode Parasitic Bipolar Current Gate-to-Body Tunneling Current Gate-Induced Drain Leakage Current Self-HeatingEffect Body Contact Model NoiseModeling PD-SOI MOSFET Model Verification Modeling of Dynamically Depleted SOI MOSFETs SurfacePotentialandCouplingEquations Symmetrically Linearized Charge-Sheet Model for DD-SOI DD-SOI Model Verification and Discussion Conclusions References Benchmark Tests for MOSFET Compact Models Xin Li, Weimin Wu, Gennady Gildenblat, Colin C. McAndrew, and Andries J. Scholten 3.1 Introduction Benchmark Tests Weak and Moderate Inversion Regions Capacitances Symmetry and Non-Singularity at Zero Drain-Source Bias Non-Quasi-Static (NQS) and Noise Model Tests Self-HeatingEffectTest(SHE) Conclusion Appendix 1 Derivation of (3.49) and (3.50) Appendix 2 Correlation Coefficient Between Gate and Drain Thermal Noise at V ds = References High-Voltage MOSFET Modeling E. Seebacher, K. Molnar, W. Posch, B. Senapati, A. Steinmair, and W. Pflanzl 4.1 Introduction HV LDMOS Modeling with Sub-Circuits HV MOSFET Sub-Circuit Using a Drain Resistor HV MOSFET Sub-Circuit Using a JFET HV MOSFET Sub-Circuit Using Three JFETs HV MOSFET Sub-Circuit Using JFETs, Resistors and Controlled Sources Symmetrical HV MOSFET Sub-Circuit with Bulk Current Modeling EKV High-Voltage MOSFET Model EKV-HV DC Model EKV-HV Charge Model...118

3 xi 4.4 MM20 High-Voltage MOSFET Model MM20 DC Model MM20 Charge Model HiSIM_HV High-Voltage MOSFET Model HiSIM_HV Model Features Resistance Modeling with HiSIM_HV Capacitance Modeling with HiSIM_HV Modeling of HV MOSFET Parasitics in HV CMOS Technology Substrate Based Devices IsolatedDevices Measurement Requirements for HV MOS Modeling DCMeasurementsforHVMOSModeling ACMeasurementsforHVMOSModeling PulsedMeasurementsforHVMOSModeling References Physics of Noise Performance of Nanoscale Bulk MOS Transistors R.P. Jindal 5.1 Introduction PreliminaryConsiderations IntrinsicFluctuations Channel Thermal Noise Induced Gate Noise Induced Substrate Noise Equilibrium Noise BulkChargeEffects ExtrinsicFluctuations Gate Resistance Noise Substrate Resistance Noise Substrate Current Super-Shot Noise GateCurrentNoise Short-Channel Effects PhysicalOrigin Effect On Channel Noise No Excess Noise School of Thought Shot Noise School Of Thought Hot Carrier School of Thought /f Noise Number versus Mobility Fluctuations Debate CurrentStatus Noise Capabilities of Compact MOS Models Conclusions References

4 xii Part II Compact Models of Bipolar Junction Transistors 6 Introduction to Bipolar Transistor Modeling Colin C. McAndrew and Marcel Tutt 6.1 Introduction BasicBipolarTransistorOperationandModeling BaseCurrent GummelIntegralChargeControlRelation SPICE Gummel-Poon Model Small-Signal Model Kull-Nagel Model III-V HBTs: Device Physics and Modeling Challenges Conclusions References Mextram R. van der Toorn, J.C.J. Paasschens, W.J. Kloosterman, and H.C. de Graaff 7.1 Introduction History Lumped-Element Modeling Modeling Time-Dependence, Non-Linearity, Large Signals Temperature Dependence and Heating Noise Model GeometricScalingandStatisticalModeling Model Structure and Components Outline Relevance of Model Structure to Modeling Results MextramPhilosophy Introduction Main Transistor Current Model Conclusion References The HiCuM Bipolar Transistor Model Michael Schröter and Bertrand Ardouin 8.1 Introduction Model Fundamentals Charges TransferCurrent Base Current Components Series Resistances NQSEffects Substrate Effects TemperatureEffects Noise...241

5 xiii Geometry Dependence Statistical and Predictive Modelling ParameterExtraction Parameter Extraction Methods ApplicationExamples Conclusions References Part III Compact Models of Passive Devices 9 Integrated Resistor Modeling Colin C. McAndrew 9.1 Introduction Semiconductor Resistors Effective Resistor Geometry and Total Resistance Resistor Temperature Dependence Terminal Resistor Models Physical 3-Terminal Resistor Model Diffused Resistor (JFET) Depletion Effect Model Poly Resistor Depletion Effect Model Unified Depletion Effect Model VelocitySaturation Self-Heating Complete 3-Terminal Resistor and JFET Model Parasitics, Noise and Statistical Modeling ParameterExtraction Details of Model Implementation Conclusions References The JUNCAP2 Model for Junction Diodes A.J. Scholten, G.D.J. Smit, R. van Langevelde, and D.B.M. Klaassen 10.1 Introduction Model Derivation Capacitance Ideal Current Shockley-Read-Hall Current Trap-Assisted Tunneling Current Band-to-Band Tunneling Current Avalanche Breakdown Current Noise GeometricalScaling ParameterExtraction TestStructures ExtractionofCVParameters ExtractionofIVParameters...311

6 xiv 10.4 Model Verification Capacitances Currents JUNCAP2Express Model Implementation and Availability Conclusion Appendix 1 Built-in Voltage Appendix 2 Evaluation of W SRH Appendix 3 Evaluation of W Ɣ Appendix 4 Evaluation of Ɣ max Appendix 5 Approximation of the erfc-function Appendix 6 JUNCAP2 Express References Surface-Potential-Based MOS Varactor Model Zeqin Zhu, Gennady Gildenblat, James Victory, and Colin C. McAndrew 11.1 Introduction Device Technology Intrinsic Device Model Inversion Layer Inertia RelaxationTimeApproximation Analytical Solution for the Small-Signal Case The Effects of Finite Polysilicon Doping and Quantum Mechanical Corrections Gate Tunneling Current Parasitic Elements Parasitic Capacitance C fr Gate Tunnel Current in the Overlap Region Parasitic Resistances Silicon Data Validation of RF Model CircuitApplicationsExamples Conclusions References Modeling of On-chip RF Passive Components Zhiping Yu 12.1 Introduction Circuit Requirement and Applications for On-chip RF Passive Components R and C RealizationinRFCMOS ICResistors Capacitors in IC Process Inductors and Transformers Non-planar Inductors: Solenoid Spiral Inductors from Current Sheet

7 xv CMOS Spiral Inductors Planar Transformers Monolithic Spiral Transformers: Structures Modeling of Spiral Inductors and Transformers Characterization of Spiral Inductors π Model for Spiral Inductors π Model for Spiral Inductors Improved 1-π Models for Spiral Inductors Models for Transformers and Baluns Parameter Extraction for Transformer Model Summary References Part IV Modeling of Multiple Gate MOSFETs 13 Multi-Gate MOSFET Compact Model BSIM-MG Darsen Lu, Chung-Hsun Lin, Ali Niknejad, and Chenming Hu 13.1 Introduction Various Flavors of Multi-gate MOSFET BSIM-IMGandBSIM-CMG Core Model for the Independent Double-gate MOSFET BasicModelingFramework SurfacePotentialCalculation Drain Current Model Capacitance Model Core Model for the Common Multi-gate MOSFET BasicModelingFramework SurfacePotentialCalculation Drain Current Model Capacitance Model RealDeviceEffects Quantum Mechanical Effects Short-Channel Effects Effective Width Model Bulk and SOI Substrate Models Other Real Device Effect Models Experimental Verification Computational Efficiency SimulationExamples V th Tuning Simulation for Independent Double-gate MOSFETs FinFET SRAM Technology and Simulation Examples StatisticalSimulationofFinFETSRAMCells References...426

8 xvi 14 Compact Modeling of Double-Gate and Nanowire MOSFETs Yuan Taur 14.1 Introduction Analytic Potential Models for Double-Gate and Nanowire MOSFETs Analytic Solutions to Double-Gate MOSFETs AnalyticSolutionstoNanowireMOSFETs Explicit, Continuous Solutions to the Implicit Equations Short-Channel Models Short-Channel Model for Double-Gate MOSFETs Short-Channel Model for Nanowire MOSFETs Charge and Capacitance Models Discussion of Surface-Potential Based Current Expression Conclusion References Part V Statistical Modeling 15 Modeling of MOS Matching Marcel Pelgrom, Hans Tuinhout, and Maarten Vertregt 15.1 Introduction Variability: An Overview DeterministicOffsets Offset Caused by Electrical Differences Offset Caused by Lithography ProximityEffects TemperatureGradients OffsetCausedbyStress Offset Mitigation Random Matching Random Fluctuations in Devices MOSThresholdMismatch CurrentFactorMismatch CurrentMismatchinStrongandWeakInversion MismatchforVariousProcesses Application to Other Components ModelingRemarks MeasuringOffsetandMismatch Matched Pair Test Structures MismatchMeasurementPrecisionConsiderations StatisticsforMismatchCharacterizations Consequences for Design AnalogDesign DigitalDesign...484

9 xvii 15.7 Conclusion Appendix: Derivation of Spatial Behavior References Statistical Modeling Using Backward Propagation of Variance (BPV) Colin C. McAndrew 16.1 Introduction Sources of Statistical Variability StatisticalModelingBasis Statistical Modeling Requires Engineering Judgment Modeling Parameter Correlations Using Uncorrelated Parameters Theoretical Formulation of BPV BPV Requirements BPVApplicationExamples Corner Models WhyModelingCorrelationsisImportant Conclusions References Index...521

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