RF and MICROWAVE SEMICONDUCTOR DEVICE HANDBOOK. Editor-in-Chief MIKE GOLIO. (g) CRC PRESS. Boca Raton London New York Washington, D.C.

Transcription

1 RF and MICROWAVE SEMICONDUCTOR DEVICE HANDBOOK Editor-in-Chief MIKE GOLIO (g) CRC PRESS Boca Raton London New York Washington, D.C.

2 Contents 1 Varactors Jan Stake 1.1 Introduction Basic Concepts Varactor Applications Varactor Devices Schottky Diode Frequency Multipliers Jack East 2.1 Introduction Schottky Diode Characteristics Analytic Descriptions of Diode Multipliers Computer-Based Design Approaches Device Limitations and Alternative Device Structures Summary and Conclusions Transit Time Micro wave Devices Robert J. Trew 3.1 Introduction Semiconductor Material Properties Two-Terminal Active Microwave Devices 3-3 Defining Terms Bipolar Junction Transistors John C. Cowles 4.1 Introduction Basic Operation Heterostructure Bipolar Transistors William Liu 5.1 Basic Device Principle Base Current Components Kirk Effects Collapse of Current Gain High Frequency Performance Device Fabrication 5-20

3 Metal-Oxide-Semiconductor Field-Effect Transistors Leonard MacEachern and Tajinder Manku 6.1 Introduction MOSFET Fundamentals CMOS at Radio Frequencies MOSFET Noise Sources MOSFET Design for RF Operation MOSFET Layout The Future of CMOS 6-28 Metal Semiconductor Field Effect Transistors Michael S. Shur 7.1 Introduction Principleof Operation Properties of Semiconductor Materials Used in MESFET Technology Schottky Barrier Contacts MESFET Technology MESFET Modeling Hetero-Dimensional (2D MESFETs) Applications 7-20 High Electron Mobility Transistors Prashant Chavarkar and Umesh K. Mishra 8.1 Introduction HEMT Device Operation and Design Scaling Issues in Ultra-High-Speed HEMTs Material Systems for HEMT Devices AlGaAs/InGaAs/GaAs Pseudomorphic HEMT (GaAs phemt) AlInAs/GalnAs/InP (InP HEMT) Technology Comparisons Conclusion 8-24 RF Power Transistors from Wide Bandgap Materials Karen E. Moore 9.1 Introduction FiguresofMerit for RF Power Transistors Common RF Power Devices from Wide Bandgap Materials Desirable Material Properties for RF Power Transistors State-of-the-Art Wide Bandgap Microwave Transistor Data Challenges to Production Conclusion 9-14

4 10 Monolithic Microwave IC Technology Lawrence P Dunleavy 10.1 Overview Basic Principles of GaAs MESFETs and HEMTs MMIC Lumped Elements: Resistors, Capacitors, and Inductors MMIC Processing and Mask Sets Defining Terms Semiconductors Mike Harris 1.1 Introduction H_l 11.2 Silicon H_ Gallium Arsenide \\ III-V Heterostructures H_ Indium Phosphide H_g 11.6 Silicon Carbide H_ Gallium Nitride Selected Material Properties Etching Processes for Semiconductors Ohmic and Schottky Contacts Metals Mike Golio 12.1 Introduction 12_i 12.2 Resistance, Resistivity, and Conductivity SkinDepth 12_ Heat Conduction 12_ Temperature Expansion Chemical Properties Weight RF Package Design and Development Jeanne S. Pavio 13.1 Introduction 13_j 13.2 Thermal Management 13_ Mechanical Design 13_ Package Electrical and Electromagnetic Modeling Design Verification, Materials, and Reliability Testing Computer-IntegratedManufacturing 13_ Conclusions I Thermal Analysis and Design of Electronic Systems Avram Bar-Cohen, Karl J. Geisler and Allan D. Kraus 14.1 Motivation 14_ Thermal Modeling I Thermal Resistance Networks 14-20

5 15 Low Voltage/Low Power Microwave Electronics Mike Golio 15.1 Introduction Motivations for Reduced Voltage Semiconductor Materials Technology Semiconductor Device Technology Circuit Design Radio and System Architecture Limits to Reductions in Voltage Summary Technology Computer Aided Design Peter A. Blakey 16.1 Introduction AnOverviewofTCAD BenefitsofTCAD Limitations of TCAD The Role of Calibration Applications of TCAD Application Protocols Conclusions Nonlinear Transistor Modeling for Circuit Simulation Walter R. Curtice 17.1 Modeling in General Scope of This Work Equivalent Circuit Models SPICE Models and Application-Specific Models Improved Transistor Models for Circuit Simulation Modeling Gate Charge as a Function of Local and Remote Voltages in MESFETS and PHEMTS Modeling the Effects Due to Traps Modeling Temperature Effects and Self-Heating Enhancing the Gummel-Poon Model for Use with GaAs and InP HBTs Modeling the RF LDMOS Power Transistor Parameter Extraction for Analytical Models The Vector Nonlinear Network Analyzer Model Verifikation Foundry Models and Statistics Future Nonlinear Transistor Models Index i-i