RFIC Design ELEN 351 Lecture 1: General Discussion
|
|
- Magnus Kelly Singleton
- 6 years ago
- Views:
Transcription
1 RFIC Design ELEN 351 Lecture 1: General Discussion Instructor: Dr. Allen Sweet Copy right 2003, ELEN351 1
2 General Information Instructor: Dr. Allen Sweet Home work/project submissions: Place all schematics, graphics, and layouts in a power point or ms word file and to instructor. Hard copy is also acceptable. Grade: Based on homework, midterm, and project. Reference books: See handout list for suggestions. Copy right 2003, ELEN351 2
3 Recommended General Software Ms Word Ms Power Point Snagit utility (demo at APPCAD (Available from Agilent) Copy right 2003, ELEN351 3
4 Simulator Options ADS by Agilent Ansoft Serenade (RF package is called Harmonica). Student version is available at ex.cfm Note: the student version is limited to only 25 nodes and 2 transistors. Genesys by Eagleware Golden Gate by Xpedian Copy right 2003, ELEN351 4
5 Layout tool Options ICEditor (demo is available at however files cannot be saved) Mentor Graphics Cadence AutoCAD Fast CAD (demo is available at ) Copy right 2003, ELEN351 5
6 Course Outline General RF/wireless concepts, simulators, simple design example. Receiver/Transmitter architectural options Layout techniques PA Design LNA Design Mixer Design VCO Design Battery issues and tradeoffs, economics of RFICs Technology comparison Copy right 2003, ELEN351 6
7 What is an RFIC? Any integrated circuit for used in the frequency range: 100 MHz to 6 GHz. Generally RFIC s contain the analog front end of a radio transceiver, or some part of it. RFIC s can be the simplest SP1T switch, up to the whole front end of a radio transceiver. RFIC s are fabricated in a number of technologies: Si Bipolar, Si CMOS, GaAs HBT, GaAs MESFET/HEMT, and SiGe HBT are today s leading technologies. Copy right 2003, ELEN351 7
8 Typical Applications for RFICs Cellular / PCS phones Cellular / PCS infrastructure WLANS GPS BlueTooth Wireless PDAs Mobile Communications Copy right 2003, ELEN351 8
9 Basic Radio Link Copy right 2003, ELEN351 9
10 Path Loss Defines the Received RF Signal Level (In db s) Signal to Noise ratio Copy right 2003, ELEN351 10
11 Shannon s law gives Maximum Data Rate in an RF Channel Rmax = BW LOG2( 1 + S/N), where BW is the RF channel s bandwidth in MHz and Rmax if the Maximum possible data rate for this channel in MBits per second. All practical MOD- DEMOD systems can only approach Shannon s limit. Radio Spectrum is a precious commodity! It must be used wisely, to handle the growing amount of wireless information flow. Copy right 2003, ELEN351 11
12 Multiple Access Techniques Conserve Valuable Spectrum Frequency Division Multiple Access (FDMA) Time Division Multiple Access (TDMA) Code Division Multiple Access (CDMA) Copy right 2003, ELEN351 12
13 FDMA Copy right 2003, ELEN351 13
14 TDMA Data Packets Copy right 2003, ELEN351 14
15 CDMA Copy right 2003, ELEN351 15
16 Block Diagram of a CDMA System Note: Spreading and De Spreading codes are identical Copy right 2003, ELEN351 16
17 Two Port S Parameters Copy right 2003, ELEN351 17
18 Types of Device Models S Parameter: Limited to small signal gain and match analysis only. Equivalent Circuit: Same limitations as the S Parameter Model, except it is scalable with area. Load Pull Impedance: For PA design, limited in usefulness to output circuit design only. Large Signal Model: No limitations, this is the most useful class of models.with these models, ALL measurable parameters can be simulated. Copy right 2003, ELEN351 18
19 Types of Large Signal Models GaAs HBT: Gummel-Poon, and VBIC GaAs MESFET: Curtice, TOM, Materka, Statz, Tajima, GaAs HEMT: EE_HEMT Si Bipolar: Gummel-Poon CMOS: Many Copy right 2003, ELEN351 19
20 The Impedance Smith Chart LINES OF CONSTANT REACTANCE INDUCTIVE SHORT (RESISTIVE AXIS) OPEN Z0 POINT CAPACITIVE CIRCLES OF CONSTANT RESISTANCE Copy right 2003, ELEN351 20
21 Impedance locus of a 10 ohm Resistor in series with a 5 nh coil Copy right 2003, ELEN351 21
22 Impedance locus of a 10 ohm Resistor in series with a 5 pf cap Copy right 2003, ELEN351 22
23 Impedance locus of an ideal 50 Ohm transmission line, Grounded at one end Copy right 2003, ELEN351 23
24 RFIC Design Process Steps Specifications Identify Topology options (literature search) Choose a Foundry Obtain Foundry s Device Models and Design Rules Initial Simulations Choose final Topology Stability Analysis (Amplifiers only) Temperature Analysis Copy right 2003, ELEN351 24
25 RFIC Design Process Steps, Continued Initial Layout Include all Layout Parasitic elements in Topology Minimize Layout Area, Preserving Performance The Art of the Trade Off Complete Final Layout Create Test Cells for Critical Circuit Blocks DRC at the Foundry Assemble the Reticle, Tapeout Mask Making, Wafer Fabrication Copy right 2003, ELEN351 25
26 Homework Assignment #1: Simulate the following Amplifier Copy right 2003, ELEN351 26
27 BIAS CHOKE Circuit Details: FEEDBACK RESISTOR INPUT BLOCKING CAP OUTPUT BLOCKING CAP TRANSISTOR AREA=3 FINGERS BASE BIAS STABILIZING RESISTOR Copy right 2003, ELEN351 27
28 Gummel Poon InGaP/GaAs HBT Device Model: 2x12 micron emitter finger Copy right 2003, ELEN351 28
29 Simulated Gain/Match/DC Conditions GAIN OUTPUT MATCH INPUT MATCH Copy right 2003, ELEN351 29
30 Smith Chart Display: Amplifier s Input and Output Impedances OUTPUT IMPEDANCE INPUT IMPEDANCE Copy right 2003, ELEN351 30
31 Simulated Noise Figure Copy right 2003, ELEN351 31
32 Simulated Stability Factor (K) Copy right 2003, ELEN351 32
RFIC Design ELEN 376 Session 1
RFIC Design ELEN 376 Session 1 Instructor: Dr. Allen Sweet April 3, 2002 Copy right 2002, elen376 1 General Information Instructor: Dr. Allen Sweet Email: allensweet@aol.com Home work/project submissions:
More informationRFIC DESIGN ELEN 351 Session4
RFIC DESIGN ELEN 351 Session4 Dr. Allen Sweet January 29, 2003 Copy right 2003 ELEN 351 1 Power Amplifier Classes Indicate Efficiency and Linearity Class A: Most linear, max efficiency is 50% Class AB:
More informationDesigning Bipolar Transistor Radio Frequency Integrated Circuits
Designing Bipolar Transistor Radio Frequency Integrated Circuits Allen A. Sweet ARTECH H O U S E BOSTON LONDON artechhouse.com Acknowledgments CHAPTER 1 Introduction CHAPTER 2 Applications 2.1 Cellular/PCS
More informationRFIC Design ELEN 351 Lecture 2: RFIC Architectures
RFIC Design ELEN 351 Lecture 2: RFIC Architectures Instructor: Dr. Allen Sweet Copy right 2003 ELEN 351 1 RFIC Architectures Modulation Choices Receiver Architectures Transmitter Architectures VCOs, Phase
More informationECEN 5014, Spring 2009 Special Topics: Active Microwave Circuits Zoya Popovic, University of Colorado, Boulder
ECEN 5014, Spring 2009 Special Topics: Active Microwave Circuits Zoya opovic, University of Colorado, Boulder LECTURE 3 MICROWAVE AMLIFIERS: INTRODUCTION L3.1. TRANSISTORS AS BILATERAL MULTIORTS Transistor
More informationRF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment
RF233 AMPLIFIER Typical Applications Broadband, Low Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low Power Applications Broadband Test Equipment Product Description
More informationFully integrated CMOS transmitter design considerations
Semiconductor Technology Fully integrated CMOS transmitter design considerations Traditionally, multiple IC chips are needed to build transmitters (Tx) used in wireless communications. The difficulty with
More informationCMY210. Demonstration Board Documentation / Applications Note (V1.0) Ultra linear General purpose up/down mixer 1. DESCRIPTION
Demonstration Board Documentation / (V1.0) Ultra linear General purpose up/down mixer Features: Very High Input IP3 of 24 dbm typical Very Low LO Power demand of 0 dbm typical; Wide input range Wide LO
More informationRF2418 LOW CURRENT LNA/MIXER
LOW CURRENT LNA/MIXER RoHS Compliant & Pb-Free Product Package Style: SOIC-14 Features Single 3V to 6.V Power Supply High Dynamic Range Low Current Drain High LO Isolation LNA Power Down Mode for Large
More informationVCC GND RF IN. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
.GHz Low Noise Amplifier with Enable RF7G.GHz LOW NOISE AMPLIFIER WITH ENABLE Package Style: SOT Lead Features DC to >6GHz Operation.7V to.0v Single Supply High Input IP.dB Noise Figure at 00MHz db Gain
More informationBehzad Razavi, RF Microelectronics, Prentice Hall PTR, 1998
2008/Sep/17 1 Text Book: Behzad Razavi, RF Microelectronics, Prentice Hall PTR, 1998 References: (MSR) Thomas H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, 2/e, Cambridge University Press,
More informationOverview: Trends and Implementation Challenges for Multi-Band/Wideband Communication
Overview: Trends and Implementation Challenges for Multi-Band/Wideband Communication Mona Mostafa Hella Assistant Professor, ESCE Department Rensselaer Polytechnic Institute What is RFIC? Any integrated
More informationRF V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER
3.3V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER Package Style: SOT 5-Lead Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.7V to 5.0V Power Supply 0.4GHz to
More informationGain and Return Loss vs Frequency. s22. Frequency (GHz)
SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description RFMD s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
More informationSP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver
SP 22.3: A 12mW Wide Dynamic Range CMOS Front-End for a Portable GPS Receiver Arvin R. Shahani, Derek K. Shaeffer, Thomas H. Lee Stanford University, Stanford, CA At submicron channel lengths, CMOS is
More informationi. At the start-up of oscillation there is an excess negative resistance (-R)
OSCILLATORS Andrew Dearn * Introduction The designers of monolithic or integrated oscillators usually have the available process dictated to them by overall system requirements such as frequency of operation
More informationFirst Integrated Bipolar RF PA Family for Cordless Telephones
First Integrated Bipolar RF PA Family for Cordless Telephones Dr. Stephan Weber Infineon Technologies AG, LIN PE PA, Balanstr. 73, 81541 Munich, Germany, stephan.weber@infineon.com, Phone 0049-89-23428722,
More informationABA GHz Broadband Silicon RFIC Amplifier. Application Note 1349
ABA-52563 3.5 GHz Broadband Silicon RFIC Amplifier Application Note 1349 Introduction Avago Technologies ABA-52563 is a low current silicon gain block RFIC amplifier housed in a 6-lead SC 70 (SOT- 363)
More informationRF3375 GENERAL PURPOSE AMPLIFIER
Basestation Applications Broadband, Low-Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications RF3375General Purpose
More informationRF2044A GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 18.5dB Small Signal Gain @ 2GHz 4.0dB Noise
More information22. VLSI in Communications
22. VLSI in Communications State-of-the-art RF Design, Communications and DSP Algorithms Design VLSI Design Isolated goals results in: - higher implementation costs - long transition time between system
More informationApplication Note No. 027
Application Note, Rev. 2.0, Jan. 2007 Application Note No. 027 Using the BGA420 Si MMIC Amplifier for Various UHF Applications from 300 MHz to 2.5 GHz RF & Protection Devices Edition 2007-01-11 Published
More informationA GHz MONOLITHIC GILBERT CELL MIXER. Andrew Dearn and Liam Devlin* Introduction
A 40 45 GHz MONOLITHIC GILBERT CELL MIXER Andrew Dearn and Liam Devlin* Introduction Millimetre-wave mixers are commonly realised using hybrid fabrication techniques, with diodes as the nonlinear mixing
More informationApplication Note 1360
ADA-4743 +17 dbm P1dB Avago Darlington Amplifier Application Note 1360 Description Avago Technologies Darlington Amplifier, ADA-4743 is a low current silicon gain block RFIC amplifier housed in a 4-lead
More informationRF2044 GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 20dB Small Signal Gain 4.0dB Noise Figure
More informationThis article describes the design of a multiband,
A Low-Noise Amplifier for 2 GHz Applications Using the NE334S01 Transistor By Ulrich Delpy NEC Electronics (Europe) This article describes the design of a multiband, low-noise amplifier (LNA) using the
More informationDesigning a 960 MHz CMOS LNA and Mixer using ADS. EE 5390 RFIC Design Michelle Montoya Alfredo Perez. April 15, 2004
Designing a 960 MHz CMOS LNA and Mixer using ADS EE 5390 RFIC Design Michelle Montoya Alfredo Perez April 15, 2004 The University of Texas at El Paso Dr Tim S. Yao ABSTRACT Two circuits satisfying the
More informationSGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
DC to 4MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationDESIGN APPLICATION NOTE --- AN011 SXT-289 Balanced Amplifier Configuration
DESIGN APPLICATION NOTE --- AN11 Abstract Increasing the data rate of communications channels within a fixed bandwidth forces an increase in amplifier linearity. Modulation and coding schemes are often
More informationNOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationPractical RF Circuit Design for Modern Wireless Systems
Practical RF Circuit Design for Modern Wireless Systems Volume II Active Circuits and Systems Rowan Gilmore Les Besser Artech House Boston " London www.artechhouse.com Contents Preface Acknowledgments
More information= 35 ma (Typ.) Frequency (GHz)
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA-486(Z) DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description The SGA-486
More informationDESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM
M. S. Alam, O. Farooq, and Izharuddin and G. A. Armstrong DESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM M. S. Alam, O. Farooq, Izharuddin Department of Electronics
More informationSGA2386ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 2800 MHz >10dB 97 C/W
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationCHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN
93 CHAPTER 4 ULTRA WIDE BAND LOW NOISE AMPLIFIER DESIGN 4.1 INTRODUCTION Ultra Wide Band (UWB) system is capable of transmitting data over a wide spectrum of frequency bands with low power and high data
More informationStudy, Modeling and Characterization of Dual-Band LNA Amplifiers Receivers for Wireless Microwaves Communication Systems
Journal of Wireless Networking and Communications 2012, 2(5): 77-82 DOI: 10.5923/j.jwnc.20120205.01 Study, Modeling and Characterization of Dual-Band LNA Amplifiers Receivers for Wireless Microwaves Communication
More informationSGA2463Z. Frequency (GHz) 18.0 dbm 1950MHz. 7.2 dbm 1950 MHz 255 C/W
SGA243Z DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-33 Product Description The SGA243Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters
More informationAdvanced RFIC Design ELEN359A, Lecture 3: Gilbert Cell Mixers. Instructor: Dr. Allen A Sweet
Advanced RFIC Design ELEN359A, Lecture 3: Gilbert Cell Mixers Instructor: Dr. Allen A Sweet All of Design is the Art and Science of Navigating Tradeoffs Science gives us the tools to understand what nature,
More informationAn Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain
An Inductor-Based 52-GHz 0.18 µm SiGe HBT Cascode LNA with 22 db Gain Michael Gordon, Sorin P. Voinigescu University of Toronto Toronto, Ontario, Canada ESSCIRC 2004, Leuven, Belgium Outline Motivation
More informationRF2126. RoHS Compliant & Pb-Free Product Typical Applications 2.5GHz ISM Band Applications
0 RF6 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications.5GHz ISM Band Applications Commercial and Consumer Systems Digital Communication Systems Portable Battery-Powered
More informationRF2162 3V 900MHz LINEAR AMPLIFIER
3V 900MHz LINEAR AMPLIFIER Package Style: QFN, 16-Pin, 4x4 Features Single 3V Supply 9dBm Linear Output Power 9dB Linear Gain 35% Linear Efficiency Onboard Power Down Mode 800MHz to 960MHz Operation Applications
More informationW-CDMA Upconverter and PA Driver with Power Control
19-2108; Rev 1; 8/03 EVALUATION KIT AVAILABLE W-CDMA Upconverter and PA Driver General Description The upconverter and PA driver IC is designed for emerging ARIB (Japan) and ETSI-UMTS (Europe) W-CDMA applications.
More informationApplication Note No. 112
Application Note, Rev. 1.2, August 2007 Wideband LNA for 200 MHz to 6 GHz applications with BFR740L3RH RF & Protection Devices Edition 2007-08-14 Published by Infineon Technologies AG 81726 München, Germany
More informationCourse Project Topic: RF Down-Conversion Chain Due Dates: Mar. 24, Apr. 7 (Interim reports), Apr. 28 (Final report)
Course Project Topic: RF Down-Conversion Chain Due Dates: Mar. 24, Apr. 7 (Interim reports), Apr. 28 (Final report) 1 Objective The objective of this project is to familiarize the student with the trade-offs
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
GPS Low Noise Amplifier with Integrated Input/Output SAW Filters RF2818 GPS LOW NOISE AMPLIFIER WITH INTEGRATED INPUT/OUTPUT SAW FILTERS Package: Module, 3.0mmx2.5mmx1.0mm Features Compact Footprint: 3.0mmx2.5mmx1.0mm
More informationRF2667. Typical Applications CDMA/FM Cellular Systems CDMA PCS Systems GSM/DCS Systems
RF66 RECEIVE AGC AND DEMODULATOR Typical Applications CDMA/FM Cellular Systems CDMA PCS Systems GSM/DCS Systems TDMA Systems Spread Spectrum Cordless Phones Wireless Local Loop Systems Product Description
More informationRF/Microwave Circuits I. Introduction Fall 2003
Introduction Fall 03 Outline Trends for Microwave Designers The Role of Passive Circuits in RF/Microwave Design Examples of Some Passive Circuits Software Laboratory Assignments Grading Trends for Microwave
More informationMaxim > Design Support > Technical Documents > Application Notes > Wireless and RF > APP 3571
Maxim > Design Support > Technical Documents > Application Notes > Wireless and RF > APP 3571 Keywords: automotive keyless entry, MAX2640, LNA, 315MHz, RKE, stability, automotive, keyless entry APPLICATION
More informationRF9986. Micro-Cell PCS Base Stations Portable Battery Powered Equipment
RF996 CDMA/TDMA/DCS900 PCS Systems PHS 500/WLAN 2400 Systems General Purpose Down Converter Micro-Cell PCS Base Stations Portable Battery Powered Equipment The RF996 is a monolithic integrated receiver
More information1 of 7 12/20/ :04 PM
1 of 7 12/20/2007 11:04 PM Trusted Resource for the Working RF Engineer [ C o m p o n e n t s ] Build An E-pHEMT Low-Noise Amplifier Although often associated with power amplifiers, E-pHEMT devices are
More informationDr.-Ing. Ulrich L. Rohde
Dr.-Ing. Ulrich L. Rohde Noise in Oscillators with Active Inductors Presented to the Faculty 3 : Mechanical engineering, Electrical engineering and industrial engineering, Brandenburg University of Technology
More informationRF2317. Laser Diode Driver Return Channel Amplifier Base Stations. CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks
CATV Distribution Amplifiers Cable Modems Broadband Gain Blocks Laser Diode Driver Return Channel Amplifier Base Stations The is a general purpose, low cost high linearity RF amplifier IC. The device is
More informationInGaP HBT MMIC Development
InGaP HBT MMIC Development Andy Dearn, Liam Devlin; Plextek Ltd, Wing Yau, Owen Wu; Global Communication Semiconductors, Inc. Abstract InGaP HBT is being increasingly adopted as the technology of choice
More informationRF5187. RoHS Compliant & Pb-Free Product Typical Applications. 2.14GHz UMTS Systems. PCS Communication Systems Digital Communication Systems
0 RF5187 LOW POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications 2.14GHz UMTS Systems PCS Communication Systems Digital Communication Systems Commercial and Consumer Systems Product
More informationSXA-3318B(Z) 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER. Product Description. Features. Applications
0MHz to 20MHz Balanced ½ W Medium Power GaAs HBT Amplifier SXA-331B(Z) 0MHz to 20MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description
More informationFrequency (GHz) 5000 MHz
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA-86(Z) DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description The SGA-86
More informationA GSM Band Low-Power LNA 1. LNA Schematic
A GSM Band Low-Power LNA 1. LNA Schematic Fig1.1 Schematic of the Designed LNA 2. Design Summary Specification Required Simulation Results Peak S21 (Gain) > 10dB >11 db 3dB Bandwidth > 200MHz (
More informationRFIC DESIGN ELEN 351 Lecture 7: Mixer Design
RFIC DESIGN ELEN 351 Lecture 7: Mixer Design Dr. Allen Sweet Copy Right 2003 ELEN 351 1 Mixer Specifications Conversion Gain / Loss (Gain defined as the ratio of power at the I freq to the power at the
More informationRF CMOS Power Amplifiers: Theory, Design and Implementation
RF CMOS Power Amplifiers: Theory, Design and Implementation THE KLUWER INTERNATIONAL SERIES IN ENGINEERING AND COMPUTER SCIENCE ANALOG CIRCUITS AND SIGNAL PROCESSING Consulting Editor: Mohammed Ismail.
More informationTechnical Article A DIRECT QUADRATURE MODULATOR IC FOR 0.9 TO 2.5 GHZ WIRELESS SYSTEMS
Introduction As wireless system designs have moved from carrier frequencies at approximately 9 MHz to wider bandwidth applications like Personal Communication System (PCS) phones at 1.8 GHz and wireless
More informationAM036MX-QG-R 1 WATT, 2 GHz POWER AMPLIFIER
AM036MX-QG-R 1 WATT, 2 GHz POWER AMPLIFIER AN136 January 2011 REV 3 INTRODUCTION This application note describes the design of a one-watt, single stage power amplifier at 2GHz using AMCOM s low cost surface
More informationChristopher J. Barnwell ECE Department U. N. Carolina at Charlotte Charlotte, NC, 28223, USA
Copyright 2008 IEEE. Published in IEEE SoutheastCon 2008, April 3-6, 2008, Huntsville, A. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising
More informationRF2126 HIGH POWER LINEAR AMPLIFIER
RF16High Power Linear Amplifier RF16 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug Features Single 3V to 6.0V Supply 1.3W Output Power 1dB Gain 45% Efficiency
More informationRF3857 DUAL CHANNEL LNA WITH BYPASS MODE
DUAL CHANNEL LNA WITH BYPASS MODE Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Low Insertion Loss Bypass Feature 1.8V to 4V
More informationApplication Note No. 124
Application Note, Rev. 1.2, September 2007 Low Noise Amplifier for 2.3 to 2.5 GHz Applications using the SiGe BFP640F Tranistor Small Signal Discretes Edition 2007-09-06 Published by Infineon Technologies
More informationRF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 2.3 to 2.7 GHz Linear Power Amplifier RF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 24-Pin, 4mmx4mmx0.9mm VBIAS VC1 24 23 22 21 20 VC2 19 Features 34dB Small
More informationSGA3363Z. = 35 ma (Typ.) Frequency (GHz) T L MHz >10dB 255 C/W
SGA3363Z DC to MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description The SGA3363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters
More informationDesign Methodology and Applications of SiGe BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth
Design Methodology and Applications of SiGe BiCMOS Cascode Opamps with up to 37-GHz Unity Gain Bandwidth S.P. Voinigescu, R. Beerkens*, T.O. Dickson, and T. Chalvatzis University of Toronto *STMicroelectronics,
More informationDesign of a Low Noise Amplifier using 0.18µm CMOS technology
The International Journal Of Engineering And Science (IJES) Volume 4 Issue 6 Pages PP.11-16 June - 2015 ISSN (e): 2319 1813 ISSN (p): 2319 1805 Design of a Low Noise Amplifier using 0.18µm CMOS technology
More informationNoise Reduction in Transistor Oscillators: Part 3 Noise Shifting Techniques. cross-coupled. over other topolo-
From July 2005 High Frequency Electronics Copyright 2005 Summit Technical Media Noise Reduction in Transistor Oscillators: Part 3 Noise Shifting Techniques By Andrei Grebennikov M/A-COM Eurotec Figure
More informationSmart Energy Solutions for the Wireless Home
Smart Energy Solutions for the Wireless Home Advanced Metering Infrastructure (AMI) ZigBee (IEEE 802.15.4) Wireless Local Area Networks (WLAN) Industrial and Home Control Plug-in Hybrid Electric Vehicles
More informationDESIGN OF ZIGBEE RF FRONT END IC IN 2.4 GHz ISM BAND
DESIGN OF ZIGBEE RF FRONT END IC IN 2.4 GHz ISM BAND SUCHITAV KHADANGA RFIC TECHNOLOGIES, BANGALORE, INDIA http://www.rficdesign.com Team-RV COLLEGE Ashray V K D V Raghu Sanjith P Hemagiri Rahul Verma
More informationSZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER
5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER Package Style: QFN, 40-Pin, 6mm x 6mm Features Single Supply Voltage 5.0V 8dB Typical Gain Across Band P OUT = 25dBm
More informationIntroduction to Surface Acoustic Wave (SAW) Devices
May 31, 2018 Introduction to Surface Acoustic Wave (SAW) Devices Part 7: Basics of RF Circuits Ken-ya Hashimoto Chiba University k.hashimoto@ieee.org http://www.te.chiba-u.jp/~ken Contents Noise Figure
More informationTexas A&M University Electrical Engineering Department ECEN 665. Laboratory #3: Analysis and Simulation of a CMOS LNA
Texas A&M University Electrical Engineering Department ECEN 665 Laboratory #3: Analysis and Simulation of a CMOS LNA Objectives: To learn the use of s-parameter and periodic steady state (pss) simulation
More informationThe Design of E-band MMIC Amplifiers
The Design of E-band MMIC Amplifiers Liam Devlin, Stuart Glynn, Graham Pearson, Andy Dearn * Plextek Ltd, London Road, Great Chesterford, Essex, CB10 1NY, UK; (lmd@plextek.co.uk) Abstract The worldwide
More informationTypical IP3, P1dB, Gain. 850 MHz 1960 MHz 2140 MHz 2450 MHz
400 to ¼W Medium Power GaAs HBT Amplifier with Active Bias SXA-9(Z) 400 to ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description RFMD s SXA-9 amplifier is a high efficiency
More information6.776 High Speed Communication Circuits and Systems Lecture 14 Voltage Controlled Oscillators
6.776 High Speed Communication Circuits and Systems Lecture 14 Voltage Controlled Oscillators Massachusetts Institute of Technology March 29, 2005 Copyright 2005 by Michael H. Perrott VCO Design for Narrowband
More informationATF-531P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 800 and 900 MHz Applications. Application Note 1371
ATF-31P8 E-pHEMT GaAs FET Low Noise Amplifier Design for 8 and 9 MHz Applications Application Note 1371 Introduction A critical first step in any LNA design is the selection of the active device. Low cost
More informationResearch and Design of Envelope Tracking Amplifier for WLAN g
Research and Design of Envelope Tracking Amplifier for WLAN 802.11g Wei Wang a, Xiao Mo b, Xiaoyuan Bao c, Feng Hu d, Wenqi Cai e College of Electronics Engineering, Chongqing University of Posts and Telecommunications,
More informationHigh Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF Enhancement Mode PHEMT
High Intercept Low Noise Amplifier for 1.9 GHz PCS and 2.1 GHz W-CDMA Applications using the ATF-55143 Enhancement Mode PHEMT Application Note 1241 Introduction Avago Technologies ATF-55143 is a low noise
More informationApplication Note 5460
MGA-89 High Linearity Amplifier with Low Operating Current for 9 MHz to. GHz Applications Application Note 6 Introduction The Avago MGA-89 is a high dynamic range amplifier designed for applications in
More informationHMC478SC70 / 478SC70E v
HMC47SC7 / 47SC7E v2.14 Typical Applications The HMC47SC7(E) is an ideal for: Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment Functional
More informationRF Integrated Circuits
Introduction and Motivation RF Integrated Circuits The recent explosion in the radio frequency (RF) and wireless market has caught the semiconductor industry by surprise. The increasing demand for affordable
More information10W Ultra-Broadband Power Amplifier
(TH1B-01 ) 10W Ultra-Broadband Power Amplifier Amin K. Ezzeddine and Ho. C. Huang AMCOM Communications, Inc 401 Professional Drive, Gaithersburg, MD 20879, USA Tel: 301-353-8400 Email: amin@amcomusa.com
More informationHot Topics and Cool Ideas in Scaled CMOS Analog Design
Engineering Insights 2006 Hot Topics and Cool Ideas in Scaled CMOS Analog Design C. Patrick Yue ECE, UCSB October 27, 2006 Slide 1 Our Research Focus High-speed analog and RF circuits Device modeling,
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC476SC7 / 476SC7E v4.814 Typical
More informationApplication Note 1285
Low Noise Amplifiers for 5.125-5.325 GHz and 5.725-5.825 GHz Using the ATF-55143 Low Noise PHEMT Application Note 1285 Description This application note describes two low noise amplifiers for use in the
More informationApplication Note No. 158
Application Note, Rev. 1.2, February 2008 Application Note No. 158 The BFP420 Transistor as a Low-Cost 900 MHz ISM Band Power Amplifier RF & Protection Devices Edition 2008-02-27 Published by Infineon
More informationVCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2x2.2x0.45mm Features Single Power Supply 3.0V to 3.6V 30dB Typical Gain, Input ed to 50 2.4GHz to 2.5GHz Frequency Range
More informationApplication Note 5038
MGA-6P8 Buffer Amplifier for 10 MHz Application Application Note 038 Introduction The MGA-6P8 is a high isolation buffer amplifier based on Avago Technologies EPHEMT process. This application note discusses
More informationAn E-band Voltage Variable Attenuator Realised on a Low Cost 0.13 m PHEMT Process
An E-band Voltage Variable Attenuator Realised on a Low Cost 0.13 m PHEMT Process Abstract Liam Devlin and Graham Pearson Plextek Ltd (liam.devlin@plextek.com) E-band spectrum at 71 to 76GHz and 81 to
More informationSGA2363ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 5000 MHz >10dB
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA233Z DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-33 Product Description The SGA233Z is a high performance SiGe HBT MMIC Amplifier. A Darlington
More informationDESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS
International Journal of Electrical and Electronics Engineering Research Vol.1, Issue 1 (2011) 41-56 TJPRC Pvt. Ltd., DESIGN ANALYSIS AND COMPARATIVE STUDY OF RF RECEIVER FRONT-ENDS IN 0.18-µM CMOS M.
More informationDesign and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology
Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Renbin Dai, and Rana Arslan Ali Khan Abstract The design of Class A and Class AB 2-stage X band Power Amplifier is described in
More informationFeatures. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
More informationDesign of low-loss 60 GHz integrated antenna switch in 65 nm CMOS
LETTER IEICE Electronics Express, Vol.15, No.7, 1 10 Design of low-loss 60 GHz integrated antenna switch in 65 nm CMOS Korkut Kaan Tokgoz a), Seitaro Kawai, Kenichi Okada, and Akira Matsuzawa Department
More informationApplication of PC Vias to Configurable RF Circuits
Application of PC Vias to Configurable RF Circuits March 24, 2008 Prof. Jeyanandh Paramesh Department of Electrical and Computer Engineering Carnegie Mellon University Pittsburgh, PA 15213 Ultimate Goal:
More informationApplication Note 5057
A 1 MHz to MHz Low Noise Feedback Amplifier using ATF-4143 Application Note 7 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide
More informationHigh Power Two- Stage Class-AB/J Power Amplifier with High Gain and
MPRA Munich Personal RePEc Archive High Power Two- Stage Class-AB/J Power Amplifier with High Gain and Efficiency Fatemeh Rahmani and Farhad Razaghian and Alireza Kashaninia Department of Electronics,
More information