Microwave Semiconductor Devices

Transcription

1 INDEX Avalanche breakdown, see reverse breakdown, Avalanche condition, 61 generalized, 62 Ballistic transport, 322, 435, 450 Bandgap, III-V-compounds, 387 Bandgap narrowing, Si, 420 BARITT device, 111, 139 Bessel function, modified, 88, 98, 252 BrCFET (Bipolar Inversion Channel FET) device, 452 Bipolar transistors, 417 BJT (Bipolar Junction Transistor), 417 base push-out, 420 base resistance, 421 breakdown voltage, 427 CB short-circuit current gain, ct, 420 CE short-circuit current gain, {3, 418 emitter crowding effect, 425 emitter injection efficiency, 'Y, 420 energy bands, 419 flicker (1/ f) noise, 424 1m..", 423 h,423 Kirk effect, 420 microwave equivalent circuit, 421 noise modeling, output power, 425 output power, plot versus frequency, 428 punch-through breakdown, 427 thermal run-away, 427 time-delays, relation to h, 423 transconductance, 420 Bloch function, 3 Brillouin zone, 5 Carrier temperature, see electron temperature Crystal structure, 1 diamond (Si, Ge), 2 zincblende(iii-v-compounds), 2 Density of states, 7, 370 Dielectric relaxation time, 35 Differential capacitance, 15 Differen tial( dynamic) resistance, 17 Diffusion, 9 Diffusion capacitance, 15 Diffusion constant, 11 versus el. field, 12, 162, 396 Diffusion-impedance-field, 159 Diffusion noise, in GUNN devices, 160 in MESFET devices, 336 Diode control devices, 283 isolation, 285 microwave equivalent circuit, 283 Jri-n diodes (Si), 283 Jri-n diodes, GaAB, 288 power handling, 286 switch speed, 286 Diode detectors, 229, 230 backward diode, 246 capacitance, 231 cut-off frequency, 235 dynamic resistance, 231 flicker (1/ f) noise, 248 frequency-dependence, V-characteristic, 231 microwave equivalent circuit, 233 point-contact, 237 Schottky-barrier, 237, see also under Schottky barrier diode sensitivity, current, 233 sensitivity, voltage, 234 square-law detector, 232 tangential sensitivity, 235 Diode mixers, 248 balanced, 268 conversion loss, definition, 254

2 466 Microwave Semiconductor Devices conversion 1055, frequency dependence, 257 conversion matrix, 254 cut-off-frequency, 257 diode noise temperature, 265 double-sideband mixer, 260 flicker (1/ f) noise, 248 harmonic balancing analysis, 255 hot-electron (InSb, 2DEG) mixer, 272 hot-electron noise, 265 IF-band, 249 image band, 249 intermodulation, 270 intervalley scattering noise, 265 intrinsic conversion loss, 248, 255 large-signal analysis, 252 local oscillator noise, effect on mixer noise figure, 267 mixer designs, examples, 270 noise figure, 258 noise temperature, 258 noise temperature, plot versus frequency, 273 parasitic elements, effect of, 256 Saleh's Z-, Y-, H-, and G-mixers, 249, 252, 255 signal band, 249 single-sideband mixer, 260 small-signal analysis, simplified, 252 three-port attenuator model, 258 trap noise, 265 Direct bandgap, 7 Drift velocity, 9 in GaAB, vs el. field, 13, 29, 304 in InGaA., 388 in InP, 304 in Si, 13 in 2DEG, 385 versus distance, GaAB, InP, Si, 328 Effective mass, 5 electron, 5 hole, 6 Einstein relation, 11, 222 Electron temperature, 19 in GaA8, 29, 54 in IMP ATTs, 90 in MESFETs, 336 in Schottky barrier diodes, 264 Electron tubes, power output, 184 Electrical conductivity, 9 GaA8,28 Energy bands, 1 GaAB, 7, 26 InP, 26 Si,7 Energy relaxation time, 29 in IMPATTs, 94 Fermi-Dirac distribution, 8, 370 Field-emission, 104 Frequency conversion, 229 see Diode detectors, Diode mixers, Harmonic multipliers Gain-bandwidth product, negative resistance amplifier, 177 Generation, electron-hole pair, 14 Group velocity, 5 GUNN device, 23 accumulation layer mode, 46 amplifier mode, 47 dead-zone effect, 50 delayed domain mode, 45 device admittance, plot, 170 diffusion-impedance-field, 159 diffusion noise in, 160 dipole-domain mode, 43 efficiency, 42, 138 equal-areas rule, 38 excess noise measure, 157 flicker (1//) noise, 156 frequency limitation, 48 harmonic operation, 50 high-field domains, 35 injection control, 50 InP, 48 LSA mode, 46 modes of operation, 42 NDM,25

3 Indez 467 noise in oscillators, 155 oscillator circuit examples, 172 peak-ta-valley ratio, 43, 48 quenched domain mode, 46 relaxation-mode, 46 stationary domain, 53 transit-time mode, 44 Harmonic multipliers, 274 BIN varactor, 278 conversion efficiency, 277, 279 cut-off frequency, 276 epitaxially-stacked varactor (ISIS), 280 figure of merit, 276 Manley-Rowe relations, 275 noise in, 283 output power, 277, 278 quantum barrier varactor, 279 RTD type, 279 resistive, 278 step-recovery varactor, 282 Heat transfer in semiconductor devices, 127 current crowding, 131 heat flow equation, 129 material parameters, 141 spreading resistance, 130 thermal limit expression, 135 thermal resistance, 129 thermal resistance, MESFET, HBT, 441 transient response, 132 HBT (Heterojunction Bipolar Transistor),417 AIGaAtI/GaAtI type, 417 AlGaAtI/Ge/GaAtI type, 437 AllnAtI/GalnAs type, 435 average electron velocity, 434 energy bands, 430 base push-out (Kirk) effect, 432 base transport factor, QT, 429 breakdown voltage, 442 flicker (1/1) noise, in oscillators, 442 1m"." 423, 433 h, 423,432,435 heterojunction (abrupt or graded), 429 InGaAs/lnP type, 435 intervalley transfer, V-characteristics, 431 microwave equivalent circuit, 432, 433 noise figure, 440 output conductance, 432 output power, 440 overshoot velocity, 432 power density, 440 Sit SiGe type, 438 structure, 431 thermal resistance, 441 time-delays, relation to h, 423,432, 435 HEMT, see HFET HFET (Heterojunction Field-Effect Transistor), 363 AIGaAs/lnGaA,/GaA, HFET, 386 AllnA,/GalnA,/InP HFET, 392 Anderson's rule, 368 average drift velocity, 381, 390, 394 bandgap, III-V-compounds, 387 band-offsets, 368 buffer layer, 365 capacitance, 382, 395 channel-doped, 391 charge control in, 376 critical thickness, 386 conventional (AIGaA,/GaAs), 363 delay time analysis, 389 electron affinity, 368 electron mobility in, 365 electron mobility, effect on speed, 381 energy band diagram, 366, 368, 377 Fermi energy, 370 flicker (1//) noise, in oscillators, 408 Fmi,.. plot versus frequency, 401, 405 1m"., In-based HFET, 387 h, conventional HFET, 382

4 468 Microwave Semiconductor Device6 h, In-based HFET, 387 Fukui's noise formula, 394 impedance-field, 400 In-based, 386 interface carrier density, V-characteristic, V -collapse, 384 microwave equivalent circuit, 394, 395, 401, 403 noise coefficients, 397 noise modeling, 394 noise model, Pospieszalski, 402 noise parameters, 396 noise temperature, cryogenic HFETs, 406 oscillators, 408 output conductance, 382 planar doping, 384 power-added efficiency, 407 power amplifiers, 404 power density, including MESFETs, 407 pseudomorphic, 386 quantum well, and energy levels in, 368 real space transfer (RST) effect, 384 structure, 367 transconductance, 379, table, 381 transconductance, In-based HFET, 392 traps in A1GaAB, 384 2DEG (two-dimensional electron gas), 365 Hot electron transistors, 450 ballistic effects, 450 IBT (Induced Base Transistor), 452 RHET (Resonant Tunneling Hot Electron Transistor), 453 spectroscopy experiments, 451 THETA device, 450 IBT (Induced Base Transistor), 452 Impact ionization, 18 ionization probability, 19 electric field dependence, 61 IMPATT device, 59 avalanche region, 62 avalanche region transit time, 75, 85 avalanche resonance frequency, 75, 88 chip-level power-combining, 132, 186 dark space, 94 device admittance, large-signal, 89 device admittance, plots, 170 device impedance, small-signal, 77 displacement current in, 67 double-drift type, 81, 97, 139, 140 doping profiles, 81 drift region, 62 efficiency, 78, 138 excess noise measure, 163 large-signal model, simple, 77, 90 large-signal model, analytical, 83 large-signal theory of noise, 165 "lo-hi-lo"-profile, 81, 83 maximum current density, 80 millimeter wave operation, 96 Misawa mode, 82 Monte Carlo simulation, 91 noise in oscillators, 163 noise measure, 163 oscillator circuit examples, 172 phase-delay, 72 physical discussion, 69 Read-type, 59 Read's equation, 75, 84 retarded injection, 93 secondary avalanching series resistance, 171 small-signal equivalent circuit, 77 small-signal theory, 71 transport model, 90 Indirect bandgap, 7 Injection locking, see Oscillator circui t properties Instability, 38 in NDM material, 38, 41 In tervalley transfer, 25 effective time, 29

5 Indez 469 frequency limitation, GUNN device, 48 in three-terminal devices, 325, 432, 435 two-temperature model, 31 MESFET devices, 297 average drift velocity, 321, 330 ballistic transport, 322 break-down voltage, 345, 354 CAD programs, 309 capacitance, gate-to-source, 311, 314 Cappy's noise formula, 334 channel, 303 channel resistance (Rdo), 317 chip-level power-combining, 186 diffusion noise, 336 dipole layer (stationary domain), 304, 306 dipole layer (drifting), 337 drain efficiency, 349 equivalent circuit, 313 equivalent circuit, table of parameters, 315 flicker (1/ J) noise, MESFET oscillators, 341 1m,.. " 316 it, 315 IT versus gate-length, 330 IT and transit time, 319 Fukui noise model, 332 gate length, 298 gate width, 298 hot-electron noise, 336 injection energy, effect of, 329 I-V -characteristic, measured, 300 I-V -characteristic, steady-state velocity curve, V-characteristic, PHS model, 311 JFET, similarity to, 298, 303 large-signal modeling, 354 layout, for power device, 347 long channel (Shockley) model, 298 MMICs, 355 monolithic power amplifiers, 353 Monte Carlo simulation of electron velocity, 327 noise coefficients, 338 noise conductances, 338, 339 noise correlation, 336 noise figure, from PHS model, 339, 341 noise figure, plot versus gate length, 341 noise, MESFET oscillators, 341 output power, limitation, 345 over-shoot velocity, 304, 309, 322 parasitic resistances, 314, 317 pinch-off voltage, 299 power-added efficiency (PAE), 347 power density, 345 Pucel-Haus-Statz (PHS) model, 306, 355 PHS noise model, 335 recessed gate, 317 saturation parameter, 308 structure, 298, 300 thermal noise, 336 thermal resistance, 441 transconductance, 309, 311, 314, 319 transconductance vs gate length, 331 transit time, 319, 329 via-hole in, 347, 350 Mixers, see Diode mixers Mobility, 9 T-dependence, 12 20EG,365 MOOFET, see HFET Momentum relaxation time, 9, 29 Negative differential mobility (NOM), 24 and high-field domains, 35 Negative differential conductance, 103 in tunnel diode, 103 in RTO, 107 Negative differential resistance (NOR), 24 Negative resistance, 23 amplifiers, 173

6 470 Microwave Semiconductor Device" GaAB, in steady state, 31 in IMP ATT device, 71 in oscillator model, 143 Noise in oscillators, see Oscillator circui t properties Noise processes and concepts, 207 diffusion noise, 220 flicker (1//) noise, 223 Friis' formula, 213 Hooge's formula, 223 Hooge parameter, 225, 226 mobility fluctuation noise, 224 noise figure, definition, 210 noise figure, variation with source admittance, 216 noise in specific device, see under device noise measure, 215 noise temperature, 210 noise temperature, transmission line, 216 number fluctuation noise, 224 Nyquist's theorem, 207, 222 Planck's black-body radiation law, 208 quantum 1/1 noise, 225 shot noise, 218 spectral intensity, 220 thermal noise, 207 thermal noise, Monte Carlo simulation, Noise temperature vs frequency, mixers, 274 Noise temperature vs frequency, threeterminal devices, 405, 406 Noise temperature vs frequency, BJT devices, 426 Noise temperature vs frequency, HBT devices, 441 Noise tempurature vs frequency, all devices, 459 Over-shoot velocity, 94 in IMP ATTs, 94 in MESFETs 304, 309, 322 Oscillator circuit properties, 143 AM noise, 152 baseband noise, 154 electronic tuning, 167 excess noise measure, ISO, 157, 163 flicker (1/!) noise, 154 FM-noise, 146, 150 FM-noise, injection-locked oscillator, 155 injection locking, 147, 148 Kurokawa oscillator model, 143 locking bandwidth, 148 noise in G UNN devices, 155 noise in IMPATT devices, 163 oscillation condition, 144 oscillator circuit examples, 172 phase noise, 151 RMS frequency deviation, 150 saturation factor, 152 stability, 144 PBT (Permeable Base Transistor), 454 Si PBT, 455 Phonons,19 acoustic mode, 19 electron scattering, 21 emission of optical phonons, 327 optical mode, 20 P-i-n diode, see Diode control devices p-n-junction, 15 degenerate, 103 Point-contact transistor, 417 Power-added efficiency (PAE), 347 Power-combining, 183 amplifying phased array, 196 chain-structure, 188 chip-level, 186 chip-level, ISIS varactor, 280 corporate structure, 187 cylindrical cavity, 192 inter-iijjection-locking, 186 Kurokawa type, 190 nonresonant, 187 n-way nonresonant, 190

7 Indez 471 quasi-optical multiplier, 201 resonant, 190 spatial (quasi-optical), 194, 199 traveling-wave type, 188 Power output limitations, 127 electronic limit, 136 maximum current limit, 136 maximum power, all semiconductor devices, 456, 457 maximum power, BJT devices, 428 maximum power, harmonic multipliers, 279 maximum power, MESFET devices, 351 maximum power, three-terminal devices, 409 maximum power, two-terminal devices, maximum voltage limit, 136 thermal limit, 127, also see Heat transfer Quantum well, 107, 364 Recombination, 14 recombination center, 14 Resonant Tunneling Transistor, 452 RHET (Resonant Tunneling Hot Electron Transistor), 453 RTBT (Resonant Tunneling Bipolar Transistor), 452 RTD (resonant tunneling device), 107 equivalent circuit model, 111 Fabry-Perot model, 110 injection conductance, 112 I-V-characteristic, 107, 122 large-signal model, 118 low-frequency instabilities, 121 maximum oscillation frequency, 111, 116 maximum power output, 118 new material combinations, 123 power output, measured, 124 small-signal device impedance, 114 space-charge resistance, 114 transit angle, optimum, 112 Reverse break-down, 18 break-down voltage, 64 effect on power output, 136 Satellite valley, 25 Saturation velocity, 12 in IMPATTs, 67 Schottky barrier, 17 Schottky barrier diode, 237 barrier height, 241 boundary condition, 243 effective recombination velocity, 242 electron affinity, 239 energy bands, 237 ideali ty factor, 243 interface states, V-characteristic, 241 metal work function, 237 Mott-diode, 246 Richardson constant, 242 series resistance, 243 structure, 238 surface states, 240 thermionic-emission-diffusion theory, 242 tunneling processes, 245 Shockley's pos. condo theorem, 35 Slater's perturbation theorem, 168 Space-charge resistance, 114 Thermal noise, 207 effect on oscillators, 150 THETA device, 450 Transit angle, 73, 113 Transit time, 38 of domain in G UNN device, 38 in IMP ATT device, 71 in MESFET device, 319, 329 Transferred electron device, see GUNN device Tunneling, 18, 103, also see RTD, 452 Tunnel diode, 103 peak-to-valley ratio, V-characteristic, 106 Varactor, 275