VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur
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1 VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING SUBJECT QUESTION BANK : EC6201 ELECTRONIC DEVICES SEM / YEAR: II / I year B.E.ECE UNIT I SEMICONDUCTOR DIODE PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias Characteristics, Switching Characteristics. Q.No Questions BT Level Competence 1. Define mass action law. BTL 1 2. What is the principle operation of PN junction in reverse bias BTL 1 condition? 3. a Si PN junction at T=300K with doping concentrations BTL 6 of Na=10 10 cm -3.assume that in=1.5*10 10 cm -3.calculate width of the space charge region in a PN junction when a reverse bias voltage Vr=5v is applied. 4. Define diffusion current and drift current. BTL 1 5. Point out why silicon is always preferred than germanium? BTL 4 6. Show the expression for drift current density. BTL 3 7. Distinguish between intrinsic and extrinsic semiconductor. BTL 2 8. Give the expression for diffusion current density. BTL 2 9. Define diffusion current. BTL Differentiate between drift and diffusion currents. Depletion BTL 4 region in PN junction. 11. Distinguish between avalanche and Zener breakdown? BTL Compare the silicon and germanium diodes with respect to cut BTL 5 in voltage and reverse saturation current. 13. Demonstrate the equation for drift current density and BTL 3 diffusion current density due to electron and hole. 14. Formulate the diode current equation. BTL 6
2 15. List the types of recovery time and define it. BTL the V-I characteristics of PN diode. BTL Discuss storage and transition time. BTL Explain the applications of PN diode. BTL Examine the energy band structure of PN junction diode. BTL What is breakdown voltage or Peak inverse voltage? BTL 1 PART B 1. Describe the theory of PN junction and derive its diode current BTL 1 equation.(16) 2. Identify and derive current components and switching BTL 1 characteristics of diode. (16) 3. Demonstrate the operation of PN Junction under zero voltage BTL 3 applied bias condition and derive the expression for built in potential barrier. (16) 4. Design the diode with built in potential barrier in a PN BTL 6 junction. Consider a silicon PN junction at 300k with doping densities Ns=1*1o 18 cm-3 and Nd=1*1015 cm-3.assume ni=1.5*1010 cm-3. (16) 5. Examine the quantitative theory of PN diode currents. (16) BTL 1 6. (i) Explain the basic structure of the PN junction.(8) (ii) Illustrate short notes on diode switching characteristics.(8) BTL 4 BTL 3 7. Explain details about the switching characteristics of PN diode BTL 4 with neat sketch. (16) 8. Explain the position of Fermi level in extrinsic semiconductor BTL 2 using the energy band diagram and obtain relation for the same. (16) 9. the expression for transition capacitance and diffusion capacitance of a PN diode. (16) BTL (i) Explain the operation of PN junction under forward bias condition with its characteristics.(8) (ii) Explain the drift and diffusion currents for PN diode.(8) BTL 2 BTL 2
3 UNIT II BIPOLAR JUNCTION NPN -PNP -Junctions-Early effect-current equations Input and Output characteristics of CE, CB CC-Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor. Q.No Questions BT Level Competence 1. What is Extrinsic and intrinsic Semiconductor? 2. Give the energy band structure of n- type semiconductor. 3. P type or trivalent impurities are called as acceptor impurity? 4. Give the relation for concentration of holes in the n- type material? 5. Give the expression for the Fermi level energy in P type semiconductor 6. Show the position of the Fermi level in the case of n type semiconductor using energy band diagram. 7. Formulate the relationship between mobility and conductivity. 8. Estimate the expression for drift current density due to electron. 9. Calculate the value of α if a transistor has a α of 0.97 find the value of β. If β= Formulate the expression for diffusion current density due to electron. 11. Describe mean life time of a hole or and electron. 12. the expression for continuity equation? 13. Define the expression for Hall coefficient. 14. Why a contact difference of potential exist in PN junction? 15. Point out the other name of continuity equation? What does it indicate? 16. State early effect. What are the consequences of it? 17. Calculate β and IE for a transistor if IB = 50μA and Ic = 3.6 ma. 18. Examine the law of junction relating the boundary value of injected minority carrier concentration with applied voltage?
4 19. List the parameters of the diode current equation? 20. Give the expression of contact difference of potential? PART B 1. Explain h-model and π-model in detail. (16) 2. Show How multi emitter transistor is working? Explain it with neat diagram. (16) 3. the hybrid parameters for a basic transistor CC, CE configuration and give its hybrid mod el. (16) 4. (a) Demonstrate the short notes on: (i) Early effect (ii) ebers moll model for BJT.(8) (b)develop the comparison of CE,CC,CB configuration. (8) 5. (i)develop the input and output characteristics of a transistor in CC conf iguration.(10) (ii)formulate the relationship between α, β, γ.(6) 6. Describe the operation of BJT and its types. (16) 7. Describe the Eber s Moll model for a PNP transistor. (16) 8. Express the derivation for f β and Draw the hybrid π model of BJT? (16) 9. Give the input and output characteristics of a transistor in CB configuration. (16) 10. Describe the Ebers Moll and Gummel Poon-model. (16) UNIT III FIELD EFFECT TRANSISTORS Introduction to Field Effect Transistors, Construction and Operation of JFETs -JFETs Drain and Transfer characteristics, JFET parameters- Expression for Saturation Drain Current, Pinch-off voltage and its significance - MOSFET Construction and Operation - Characteristics of D-MOSFET, E- MOSFET - Threshold Voltage, Effect of Channel Length Modulation - D-MOSFET, E- MOSFET - Current Equation Equivalent Circuit Model and its parameters-finfet-dual gate MOSFET Q.No Questions 1. in which region JFET acts as a resistor and why? 2. Differentiate between JFET and BJT? BT Level Competence analyze
5 3. Define amplification factor in JFET. 4. Deduce the V-I characteristics curve of MOSFET 5. Point out the advantages of MOSFET compared to JFET? 6. Compare JFET & MOSFET? 7. List the advantages of FET? 8. What are the two modes of MOSFET? 9. Deduce the drain current equation of JFET? 10. Define Tranconductance (gm)? 11. Formulate the relationship between various FET parameters? 12. Relate How JFET act as VVR? 13. Examine why Depletion MOSFET is commonly known as Normally on MOSFET? 14. Classify the three regions that are present in the drain source characteristics of JFET? 15. Differentiate between current voltage relationships of the N channel and P channel MOSFET. 16. Summarize Shockley s equation. 17. List the advantages of FINFET? 18. Define pinch-off voltage. 19. Describe drain resistance. 20. Construct the maximum and minimum transfer characteristic for a JFET and the information provided from the data sheet is Vp = V as(off) = 2V(min), 8V(max) IDSS =4 ma(min),16 ma(max). Part B 1. Explain the four distinct regions of output characteristics of the JFET?(16) 2. With the help of suitable diagram explain the working of different kinds of MOSFET? (8) Illustrate the hybrid model of a transistor.(8) 3. Describe some applications of JFET? (16)
6 4. a.discuss about FINFET and dual gate MOSFET? b. Compare the difference between JFET &MOSFET? 5. Deduce the V-I equation of a MOSFET and draw the characteristics in the depletion mode and enhancement mode. (16) 6. Compare the following a) D-MOSFET & E-MOSFET.(8) b) n-channel MOSFET & p channel MOSFET.(8) 7. Calculate the various FET parameters from the above characteristics and explain the Construction, operation and characteristics of a p- channel JFET. (16) 8. Illustrate the conditions for a transistor to operate as a switch. Discuss the charge control approach to hybrid model of a transistor. (16) 9. Describe Early s Base width in a transistor. How does it affect the input and output characteristics? (16) Explain the FINFET circuit model with necessary diagrams & 10. parameters? And the Dual gate MOSFET circuit model with necessary diagrams & parameters? (16) UNIT IV SPECIAL SEMICONDUCTOR DEVICES Metal-Semiconductor Junction- MESFET, Schottky barrier diode-zener diode-varactor diode Tunnel diode- Gallium Arsenide device, LASER diode, LDR. Q.No Questions 1. What is Metal Semiconductor Junction? 2. Write short notes on MESFET. 3. Define Zener diode. 4. Compare MOSFET and MESFET. 5. Discuss the Zener breakdown voltage. 6. List out the applications of Zener diode and Schottky diode BT Level Competence
7 7. Describe the negative resistance of Tunnel diode. 8. Explain Tunneling Phenomenon. 9. What are the differences between a Tunnel diode and an ordinary PN junction diode? 10. Identify the symbol and structure of Schottky diode. 11. Draw energy band diagram of Metal and Semiconductor before and after conduction is made. 12. What is Gallium Arsenide Device (GaAs)? 13. Sketch the V-I characteristics curve for Zener diode. 14. Develop the Tunnel Diode Oscillator circuit. 15. Illustrate the equivalent circuit for Tunnel diode. 16. Describe the working principle of Varactor diode. 17. If the Zener Impedance is greater than the specified value, what will be the output voltage (more or less)? 18. For certain Zener diode V Z =10v at I ZT =30mA, if Z Z =8Ω, Determine the terminal voltage at I Z =50mA? 19. Expand: LASER, LDR. 20. Determine diode capacitance value from Varactor tuning ratio. PART B 1. i) Illustrate the V-I Characteristic curve and explain the operation of Zener diode. (8) ii) Compare Avalanche and Zener breakdown. (8) 2. Explain how a Zener is used in voltage regulation. (16) 3. Describe the Variable Capacitance characteristics of a Varactor diode and analyze its operation in typical circuit. (16) 4. Determine the Current- Voltage relationship of a Schottky Barrier diode and discuss its operation. (16) 5. i) Consider an n-channel GaAs MESFET at T=300k with a gold Schottky Barrier contact. Assume the Barrier height is Φ Bn =0.89v. The n-channel doping is N d =2x10 15 cm -3. Determine the channel thickness such that V T =+0.25v. Also N C =4.7x10 17 cm -3 and r of GaAs=13.1. (8) ii) What is the working principle of Metal semiconductor junction? (8) 6. Discuss the operation of Tunnel diode using energy band diagram and the characteristics of tunnel diode. (16)
8 7. the construction details and working principle of LASER diode. (16) 8. Write short notes on LDR and list out its applications. (16) 9. Give the working principle of Gallium Arsenide Device with neat diagram. (16) 10. i) Develop a circuit for Tunnel diode oscillator. (8) ii) A 24V, 600mW Zener diode is used for providing a 24V stabilized supply to a variable load. If the input voltage is 32V, propose (a) The value of series resistance required (b) Diode current when the load is 1200Ω. (8) UNIT V POWER DEVICES AND DISPLAY DEVICES UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD. Q.No Questions 1. What is SCR? Mention its applications. BT Level Competence 2. Why SCR cannot be used as a bidirectional switch? 3. Compare BJT and UJT. 4. What is Diac? List out its applications. 5. Define Triac and mention its applications. 6. Draw the two transistor equivalent circuit of SCR. 7. Identify a Diac or Triac by the schematic symbol. 8. List the applications of UJT. 9. Describe the working principle of an LED and its applications 10. Sketch the V-I characteristics of UJT. 11. How does Triac differs from Diac? 12. Show the V-I characteristics for Triac. 13. A solar cell is a PN junction device with no voltage directly applied across the junction. If it is so, how does a solar cell deliver power to load?
9 14. Compare Triac with SCR. 15. Express the equation for standoff ratio. 16. Determine the peak point emitter voltage V p if V BB =20v and V PN =0.7v for certain UJT gives η= If positive voltage is applied to gate, plan what happens in DMOS? 18. Discuss the types of opto couplers. 19. maximum irradiance at a distance of 10 cm from the LED source and maximum power is 15 mw/s r. 20. Define CCD and Solar cell. PART B 1. Give the working principle of UJT with the help of equivalent circuit. (16) 2. (i)discuss the characteristics and working principle of SCR and list out its applications. (8) (ii) Write down the significance of optocouplers. (8) BTL 1 3. the spectral output curves and radiation pattern of LED. (16) 4. (i)illustrate the structure of Phototransistor and explain its operation. (8) (ii) Explain Power MOSFET & Compare DMOS with VMOS. (8) 5. Demonstrate the construction details and working principle of Diac and Triac. (16) 6. (i)write short notes on LCD(8) (ii) Design a two transistor model of SCR. (8) 7. (i)give a brief note on CCD. (8) (ii) Format three phase CCD operation. (8) 8. What is the working principle of solar cell and opto couplers? (16) 9. Describe the structure and operation of Power BJT and Power MOSFET.(16) 10. Determine the operation of UJT relaxation oscillator and R 1 value from the conditions for turn-on and turn-off.(16)
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