VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur

Size: px
Start display at page:

Download "VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur"

Transcription

1 VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING SUBJECT QUESTION BANK : EC6201 ELECTRONIC DEVICES SEM / YEAR: II / I year B.E.ECE UNIT I SEMICONDUCTOR DIODE PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias Characteristics, Switching Characteristics. Q.No Questions BT Level Competence 1. Define mass action law. BTL 1 2. What is the principle operation of PN junction in reverse bias BTL 1 condition? 3. a Si PN junction at T=300K with doping concentrations BTL 6 of Na=10 10 cm -3.assume that in=1.5*10 10 cm -3.calculate width of the space charge region in a PN junction when a reverse bias voltage Vr=5v is applied. 4. Define diffusion current and drift current. BTL 1 5. Point out why silicon is always preferred than germanium? BTL 4 6. Show the expression for drift current density. BTL 3 7. Distinguish between intrinsic and extrinsic semiconductor. BTL 2 8. Give the expression for diffusion current density. BTL 2 9. Define diffusion current. BTL Differentiate between drift and diffusion currents. Depletion BTL 4 region in PN junction. 11. Distinguish between avalanche and Zener breakdown? BTL Compare the silicon and germanium diodes with respect to cut BTL 5 in voltage and reverse saturation current. 13. Demonstrate the equation for drift current density and BTL 3 diffusion current density due to electron and hole. 14. Formulate the diode current equation. BTL 6

2 15. List the types of recovery time and define it. BTL the V-I characteristics of PN diode. BTL Discuss storage and transition time. BTL Explain the applications of PN diode. BTL Examine the energy band structure of PN junction diode. BTL What is breakdown voltage or Peak inverse voltage? BTL 1 PART B 1. Describe the theory of PN junction and derive its diode current BTL 1 equation.(16) 2. Identify and derive current components and switching BTL 1 characteristics of diode. (16) 3. Demonstrate the operation of PN Junction under zero voltage BTL 3 applied bias condition and derive the expression for built in potential barrier. (16) 4. Design the diode with built in potential barrier in a PN BTL 6 junction. Consider a silicon PN junction at 300k with doping densities Ns=1*1o 18 cm-3 and Nd=1*1015 cm-3.assume ni=1.5*1010 cm-3. (16) 5. Examine the quantitative theory of PN diode currents. (16) BTL 1 6. (i) Explain the basic structure of the PN junction.(8) (ii) Illustrate short notes on diode switching characteristics.(8) BTL 4 BTL 3 7. Explain details about the switching characteristics of PN diode BTL 4 with neat sketch. (16) 8. Explain the position of Fermi level in extrinsic semiconductor BTL 2 using the energy band diagram and obtain relation for the same. (16) 9. the expression for transition capacitance and diffusion capacitance of a PN diode. (16) BTL (i) Explain the operation of PN junction under forward bias condition with its characteristics.(8) (ii) Explain the drift and diffusion currents for PN diode.(8) BTL 2 BTL 2

3 UNIT II BIPOLAR JUNCTION NPN -PNP -Junctions-Early effect-current equations Input and Output characteristics of CE, CB CC-Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor. Q.No Questions BT Level Competence 1. What is Extrinsic and intrinsic Semiconductor? 2. Give the energy band structure of n- type semiconductor. 3. P type or trivalent impurities are called as acceptor impurity? 4. Give the relation for concentration of holes in the n- type material? 5. Give the expression for the Fermi level energy in P type semiconductor 6. Show the position of the Fermi level in the case of n type semiconductor using energy band diagram. 7. Formulate the relationship between mobility and conductivity. 8. Estimate the expression for drift current density due to electron. 9. Calculate the value of α if a transistor has a α of 0.97 find the value of β. If β= Formulate the expression for diffusion current density due to electron. 11. Describe mean life time of a hole or and electron. 12. the expression for continuity equation? 13. Define the expression for Hall coefficient. 14. Why a contact difference of potential exist in PN junction? 15. Point out the other name of continuity equation? What does it indicate? 16. State early effect. What are the consequences of it? 17. Calculate β and IE for a transistor if IB = 50μA and Ic = 3.6 ma. 18. Examine the law of junction relating the boundary value of injected minority carrier concentration with applied voltage?

4 19. List the parameters of the diode current equation? 20. Give the expression of contact difference of potential? PART B 1. Explain h-model and π-model in detail. (16) 2. Show How multi emitter transistor is working? Explain it with neat diagram. (16) 3. the hybrid parameters for a basic transistor CC, CE configuration and give its hybrid mod el. (16) 4. (a) Demonstrate the short notes on: (i) Early effect (ii) ebers moll model for BJT.(8) (b)develop the comparison of CE,CC,CB configuration. (8) 5. (i)develop the input and output characteristics of a transistor in CC conf iguration.(10) (ii)formulate the relationship between α, β, γ.(6) 6. Describe the operation of BJT and its types. (16) 7. Describe the Eber s Moll model for a PNP transistor. (16) 8. Express the derivation for f β and Draw the hybrid π model of BJT? (16) 9. Give the input and output characteristics of a transistor in CB configuration. (16) 10. Describe the Ebers Moll and Gummel Poon-model. (16) UNIT III FIELD EFFECT TRANSISTORS Introduction to Field Effect Transistors, Construction and Operation of JFETs -JFETs Drain and Transfer characteristics, JFET parameters- Expression for Saturation Drain Current, Pinch-off voltage and its significance - MOSFET Construction and Operation - Characteristics of D-MOSFET, E- MOSFET - Threshold Voltage, Effect of Channel Length Modulation - D-MOSFET, E- MOSFET - Current Equation Equivalent Circuit Model and its parameters-finfet-dual gate MOSFET Q.No Questions 1. in which region JFET acts as a resistor and why? 2. Differentiate between JFET and BJT? BT Level Competence analyze

5 3. Define amplification factor in JFET. 4. Deduce the V-I characteristics curve of MOSFET 5. Point out the advantages of MOSFET compared to JFET? 6. Compare JFET & MOSFET? 7. List the advantages of FET? 8. What are the two modes of MOSFET? 9. Deduce the drain current equation of JFET? 10. Define Tranconductance (gm)? 11. Formulate the relationship between various FET parameters? 12. Relate How JFET act as VVR? 13. Examine why Depletion MOSFET is commonly known as Normally on MOSFET? 14. Classify the three regions that are present in the drain source characteristics of JFET? 15. Differentiate between current voltage relationships of the N channel and P channel MOSFET. 16. Summarize Shockley s equation. 17. List the advantages of FINFET? 18. Define pinch-off voltage. 19. Describe drain resistance. 20. Construct the maximum and minimum transfer characteristic for a JFET and the information provided from the data sheet is Vp = V as(off) = 2V(min), 8V(max) IDSS =4 ma(min),16 ma(max). Part B 1. Explain the four distinct regions of output characteristics of the JFET?(16) 2. With the help of suitable diagram explain the working of different kinds of MOSFET? (8) Illustrate the hybrid model of a transistor.(8) 3. Describe some applications of JFET? (16)

6 4. a.discuss about FINFET and dual gate MOSFET? b. Compare the difference between JFET &MOSFET? 5. Deduce the V-I equation of a MOSFET and draw the characteristics in the depletion mode and enhancement mode. (16) 6. Compare the following a) D-MOSFET & E-MOSFET.(8) b) n-channel MOSFET & p channel MOSFET.(8) 7. Calculate the various FET parameters from the above characteristics and explain the Construction, operation and characteristics of a p- channel JFET. (16) 8. Illustrate the conditions for a transistor to operate as a switch. Discuss the charge control approach to hybrid model of a transistor. (16) 9. Describe Early s Base width in a transistor. How does it affect the input and output characteristics? (16) Explain the FINFET circuit model with necessary diagrams & 10. parameters? And the Dual gate MOSFET circuit model with necessary diagrams & parameters? (16) UNIT IV SPECIAL SEMICONDUCTOR DEVICES Metal-Semiconductor Junction- MESFET, Schottky barrier diode-zener diode-varactor diode Tunnel diode- Gallium Arsenide device, LASER diode, LDR. Q.No Questions 1. What is Metal Semiconductor Junction? 2. Write short notes on MESFET. 3. Define Zener diode. 4. Compare MOSFET and MESFET. 5. Discuss the Zener breakdown voltage. 6. List out the applications of Zener diode and Schottky diode BT Level Competence

7 7. Describe the negative resistance of Tunnel diode. 8. Explain Tunneling Phenomenon. 9. What are the differences between a Tunnel diode and an ordinary PN junction diode? 10. Identify the symbol and structure of Schottky diode. 11. Draw energy band diagram of Metal and Semiconductor before and after conduction is made. 12. What is Gallium Arsenide Device (GaAs)? 13. Sketch the V-I characteristics curve for Zener diode. 14. Develop the Tunnel Diode Oscillator circuit. 15. Illustrate the equivalent circuit for Tunnel diode. 16. Describe the working principle of Varactor diode. 17. If the Zener Impedance is greater than the specified value, what will be the output voltage (more or less)? 18. For certain Zener diode V Z =10v at I ZT =30mA, if Z Z =8Ω, Determine the terminal voltage at I Z =50mA? 19. Expand: LASER, LDR. 20. Determine diode capacitance value from Varactor tuning ratio. PART B 1. i) Illustrate the V-I Characteristic curve and explain the operation of Zener diode. (8) ii) Compare Avalanche and Zener breakdown. (8) 2. Explain how a Zener is used in voltage regulation. (16) 3. Describe the Variable Capacitance characteristics of a Varactor diode and analyze its operation in typical circuit. (16) 4. Determine the Current- Voltage relationship of a Schottky Barrier diode and discuss its operation. (16) 5. i) Consider an n-channel GaAs MESFET at T=300k with a gold Schottky Barrier contact. Assume the Barrier height is Φ Bn =0.89v. The n-channel doping is N d =2x10 15 cm -3. Determine the channel thickness such that V T =+0.25v. Also N C =4.7x10 17 cm -3 and r of GaAs=13.1. (8) ii) What is the working principle of Metal semiconductor junction? (8) 6. Discuss the operation of Tunnel diode using energy band diagram and the characteristics of tunnel diode. (16)

8 7. the construction details and working principle of LASER diode. (16) 8. Write short notes on LDR and list out its applications. (16) 9. Give the working principle of Gallium Arsenide Device with neat diagram. (16) 10. i) Develop a circuit for Tunnel diode oscillator. (8) ii) A 24V, 600mW Zener diode is used for providing a 24V stabilized supply to a variable load. If the input voltage is 32V, propose (a) The value of series resistance required (b) Diode current when the load is 1200Ω. (8) UNIT V POWER DEVICES AND DISPLAY DEVICES UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD. Q.No Questions 1. What is SCR? Mention its applications. BT Level Competence 2. Why SCR cannot be used as a bidirectional switch? 3. Compare BJT and UJT. 4. What is Diac? List out its applications. 5. Define Triac and mention its applications. 6. Draw the two transistor equivalent circuit of SCR. 7. Identify a Diac or Triac by the schematic symbol. 8. List the applications of UJT. 9. Describe the working principle of an LED and its applications 10. Sketch the V-I characteristics of UJT. 11. How does Triac differs from Diac? 12. Show the V-I characteristics for Triac. 13. A solar cell is a PN junction device with no voltage directly applied across the junction. If it is so, how does a solar cell deliver power to load?

9 14. Compare Triac with SCR. 15. Express the equation for standoff ratio. 16. Determine the peak point emitter voltage V p if V BB =20v and V PN =0.7v for certain UJT gives η= If positive voltage is applied to gate, plan what happens in DMOS? 18. Discuss the types of opto couplers. 19. maximum irradiance at a distance of 10 cm from the LED source and maximum power is 15 mw/s r. 20. Define CCD and Solar cell. PART B 1. Give the working principle of UJT with the help of equivalent circuit. (16) 2. (i)discuss the characteristics and working principle of SCR and list out its applications. (8) (ii) Write down the significance of optocouplers. (8) BTL 1 3. the spectral output curves and radiation pattern of LED. (16) 4. (i)illustrate the structure of Phototransistor and explain its operation. (8) (ii) Explain Power MOSFET & Compare DMOS with VMOS. (8) 5. Demonstrate the construction details and working principle of Diac and Triac. (16) 6. (i)write short notes on LCD(8) (ii) Design a two transistor model of SCR. (8) 7. (i)give a brief note on CCD. (8) (ii) Format three phase CCD operation. (8) 8. What is the working principle of solar cell and opto couplers? (16) 9. Describe the structure and operation of Power BJT and Power MOSFET.(16) 10. Determine the operation of UJT relaxation oscillator and R 1 value from the conditions for turn-on and turn-off.(16)

Reg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester

Reg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES

More information

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and

More information

QUESTION BANK EC6201 ELECTRONIC DEVICES UNIT I SEMICONDUCTOR DIODE PART A. It has two types. 1. Intrinsic semiconductor 2. Extrinsic semiconductor.

QUESTION BANK EC6201 ELECTRONIC DEVICES UNIT I SEMICONDUCTOR DIODE PART A. It has two types. 1. Intrinsic semiconductor 2. Extrinsic semiconductor. FATIMA MICHAEL COLLEGE OF ENGINEERING & TECHNOLOGY Senkottai Village, Madurai Sivagangai Main Road, Madurai - 625 020. [An ISO 9001:2008 Certified Institution] QUESTION BANK EC6201 ELECTRONIC DEVICES SEMESTER:

More information

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)

R a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M) SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave

More information

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34

CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34 CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials

More information

VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR- 603 203 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT I PN JUNCTION DEVICES 1. Define Semiconductor.

More information

S.No. Name of the Subject/Lab Semester Page No. 1 Electronic devices II 2 2 Circuit theory II 6

S.No. Name of the Subject/Lab Semester Page No. 1 Electronic devices II 2 2 Circuit theory II 6 V.S.B. ENGINEERING COLLEGE, KARUR Academic Year: 2016-2017 (EVEN Semester) Department of Electronics and Communication Engineering Course Materials (2013 Regulations) Question Bank S.No. Name of the Subject/Lab

More information

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING KINGS COLLEGE OF ENGINEERING PUNALKULAM. DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING QUESTION BANK SUBJECT CODE : EE1152 SEM / YEAR : II / I SUBJECT NAME : ELECTRIC CIRCUITS AND ELECTRON DEVICES

More information

UNIT I PN JUNCTION DEVICES

UNIT I PN JUNCTION DEVICES UNIT I PN JUNCTION DEVICES 1. Define Semiconductor. 2. Classify Semiconductors. 3. Define Hole Current. 4. Define Knee voltage of a Diode. 5. What is Peak Inverse Voltage? 6. Define Depletion Region in

More information

LESSON PLAN. Chap.no. Testing. & Page. Outcome No. 1. Introduction - T1 C5,95. Understand the devices. a).an ability to 2. Field intensity - potential

LESSON PLAN. Chap.no. Testing. & Page. Outcome No. 1. Introduction - T1 C5,95. Understand the devices. a).an ability to 2. Field intensity - potential EE0207 ELECTRONIC DEVICES LESSON PLAN SEMICONDUCTORS Semiconductors devices: Field intensity - potential energy - mobility - conductivity - electrons holes - charge density in semiconductors - electrical

More information

Paper-1 (Circuit Analysis) UNIT-I

Paper-1 (Circuit Analysis) UNIT-I Paper-1 (Circuit Analysis) UNIT-I AC Fundamentals & Kirchhoff s Current and Voltage Laws 1. Explain how a sinusoidal signal can be generated and give the significance of each term in the equation? 2. Define

More information

Government of Karnataka Department of Technical Education Board of Technical Examinations, Bengaluru

Government of Karnataka Department of Technical Education Board of Technical Examinations, Bengaluru Prerequisites Government of Karnataka Department of Technical Education Board of Technical Examinations, Bengaluru Title: Basics of Semiconductor Devices Code : 15EC21T Semester : 2 Group : Core Teaching

More information

SYED AMMAL ENGINEERING COLLEGE

SYED AMMAL ENGINEERING COLLEGE SYED AMMAL ENGINEERING COLLEGE (Approved by the AICTE, New Delhi, Govt. of Tamilnadu and Affiliated to Anna University, Chennai) Established in 1998 - An ISO 9001:2008 Certified Institution Dr. E.M.Abdullah

More information

VALLIAMMAI ENGINEERING COLLEGE

VALLIAMMAI ENGINEERING COLLEGE VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203 DEPARTMENT OF ELECTRONICS AND INSTRUMENTATION ENGINEERING QUESTION BANK III SEMESTER EC6202 ELECTRONIC DEVICES AND CIRCUITS Regulation 2013

More information

TEACHING & EXAMINATION SCHEME For the Examination 2015 ELECTRONICS. B.Sc. Part - I

TEACHING & EXAMINATION SCHEME For the Examination 2015 ELECTRONICS. B.Sc. Part - I TEACHING & EXAMINATION SCHEME For the Examination 2015 ELECTRONICS THEORY B.Sc. Part - I Elec. 101 Paper I Circuit Elements and Networks Pd/W Exam. Max. (45mts.) Hours Marks 150 2 3 50 Elec. 102 Paper

More information

SKP Engineering College

SKP Engineering College SKP Engineering College Tiruvannamalai 606611 A Course Material on Electronic Devices By K.Vijayalakshmi Assistant Professor Electronics and Communication Engineering Department Electronics and Communication

More information

FREQUENTLY ASKED QUESTIONS

FREQUENTLY ASKED QUESTIONS FREQUENTLY ASKED QUESTIONS UNIT-1 SUBJECT : ELECTRONIC DEVICES AND CIRCUITS SUBJECT CODE : EC6202 BRANCH: EEE PART -A 1. What is meant by diffusion current in a semi conductor? (APR/MAY 2010, 2011, NOV/DEC

More information

SYLLABUS OSMANIA UNIVERSITY (HYDERABAD)

SYLLABUS OSMANIA UNIVERSITY (HYDERABAD) UNIT - 1 i SYLLABUS OSMANIA UNIVERSITY (HYDERABAD) JUNCTION DIODE Different Types of PN Junction Formation Techniques, PN Junction Characteristics, Biasing, Band Diagrams and Current Flow, Diode Current

More information

VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur

VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203. DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING QUESTION BANK SUBJECT : EC 6202 Electronic Devices and Circuits SEM / YEAR: III /

More information

VALLIAMMAI ENGINEERING COLLEGE

VALLIAMMAI ENGINEERING COLLEGE VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR 60320 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING QUESTION BANK Academic Year: 2018 2019 Odd Semester Subject: EC8353 - ELECTRON DEVICES

More information

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS

DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS UNIT-I - PN DIODEAND ITSAPPLICATIONS 1. What is depletion region in PN junction?

More information

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad

INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad INSTITUTE OF AERONAUTICAL ENGINEERING (Autonomous) Dundigal, Hyderabad -500 043 COMPUTER SCIENCE AND ENGINEERING TUTORIAL QUESTION BANK Course Name : ELECTRONIC DEVICES AND CIRCUITS Course Code : A30404

More information

Code No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions

More information

UNIT 3 Transistors JFET

UNIT 3 Transistors JFET UNIT 3 Transistors JFET Mosfet Definition of BJT A bipolar junction transistor is a three terminal semiconductor device consisting of two p-n junctions which is able to amplify or magnify a signal. It

More information

ELECTRONIC DEVICES S.NO CONTENTS PAGE NO UNIT I SEMICONDUCTOR DIODE. 1.1 Introduction about electron, electron devices and circuits 1

ELECTRONIC DEVICES S.NO CONTENTS PAGE NO UNIT I SEMICONDUCTOR DIODE. 1.1 Introduction about electron, electron devices and circuits 1 S.NO CONTENTS PAGE NO UNIT I SEMICONDUCTOR DIODE 1.1 Introduction about electron, electron devices and circuits 1 1.2 Review of intrinsic and extrinsic semiconductors 2 1.3 PN junction diode 4 1.4 Current

More information

Semiconductor Devices

Semiconductor Devices Semiconductor Devices Modelling and Technology Source Electrons Gate Holes Drain Insulator Nandita DasGupta Amitava DasGupta SEMICONDUCTOR DEVICES Modelling and Technology NANDITA DASGUPTA Professor Department

More information

ELECTRONIC DEVICES AND CIRCUITS

ELECTRONIC DEVICES AND CIRCUITS ELECTRONIC DEVICES AND CIRCUITS 1. As compared to a full wave rectifier using 2 diodes, the four diode bridge rectifier has the dominant advantage of (a) Higher current carrying (b) lower peak inverse

More information

EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current.

EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS. 1. Define diffusion current. EC6202-ELECTRONIC DEVICES AND CIRCUITS YEAR/SEM: II/III UNIT 1 TWO MARKS 1. Define diffusion current. A movement of charge carriers due to the concentration gradient in a semiconductor is called process

More information

GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013

GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013 Seat No.: Enrolment No. GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013 Subject Code: 131101 Date: 31-05-2013 Subject Name: Basic Electronics Time: 02.30 pm - 05.00 pm Total

More information

UNIT 3: FIELD EFFECT TRANSISTORS

UNIT 3: FIELD EFFECT TRANSISTORS FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are

More information

Bipolar Junction Transistor (BJT) Basics- GATE Problems

Bipolar Junction Transistor (BJT) Basics- GATE Problems Bipolar Junction Transistor (BJT) Basics- GATE Problems One Mark Questions 1. The break down voltage of a transistor with its base open is BV CEO and that with emitter open is BV CBO, then (a) BV CEO =

More information

SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET

SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change

More information

Department of Electrical Engineering IIT Madras

Department of Electrical Engineering IIT Madras Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or

More information

THE METAL-SEMICONDUCTOR CONTACT

THE METAL-SEMICONDUCTOR CONTACT THE METAL-SEMICONDUCTOR CONTACT PROBLEM 1 To calculate the theoretical barrier height, built-in potential barrier, and maximum electric field in a metal-semiconductor diode for zero applied bias. Consider

More information

CENTURION UNIVERSITY OF TECHNOLOGY AND MANAGEMENT SCHOOL OF ENGINEERING & TECHNOLOGYDEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

CENTURION UNIVERSITY OF TECHNOLOGY AND MANAGEMENT SCHOOL OF ENGINEERING & TECHNOLOGYDEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING CENTURION UNIVERSITY OF TECHNOLOGY AND MANAGEMENT SCHOOL OF ENGINEERING & TECHNOLOGYDEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING ELECTRONIC DEVICES Section: ECE SEM: II PART-A 1. a) In a N-type

More information

NAME: Last First Signature

NAME: Last First Signature UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT

More information

1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is

1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is 1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is A [ ]) the diode is open. B [ ]) the diode is shorted to ground. C [v]) the diode is

More information

Lesson 5. Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors-

Lesson 5. Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors- Lesson 5 Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors- Types and Connections Semiconductors Semiconductors If there are many free

More information

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/

MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/ MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC 27001 2005 Certified) SUMMER 13 EXAMINATION Subject Code: 12025 Model Answer Page No: 1/ Important Instructions to examiners: 1) The

More information

Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.

Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have

More information

PHYSICS OF SEMICONDUCTOR DEVICES

PHYSICS OF SEMICONDUCTOR DEVICES PHYSICS OF SEMICONDUCTOR DEVICES PHYSICS OF SEMICONDUCTOR DEVICES by J. P. Colinge Department of Electrical and Computer Engineering University of California, Davis C. A. Colinge Department of Electrical

More information

Energy band diagrams Metals: 9. ELECTRONIC DEVICES GIST ρ= 10-2 to 10-8 Ω m Insulators: ρ> 10 8 Ω m Semiconductors ρ= 1 to 10 5 Ω m 109 A. Intrinsic semiconductors At T=0k it acts as insulator At room

More information

Module 04.(B1) Electronic Fundamentals

Module 04.(B1) Electronic Fundamentals 1.1a. Semiconductors - Diodes. Module 04.(B1) Electronic Fundamentals Question Number. 1. What gives the colour of an LED?. Option A. The active element. Option B. The plastic it is encased in. Option

More information

UNIT IX ELECTRONIC DEVICES

UNIT IX ELECTRONIC DEVICES UNT X ELECTRONC DECES Weightage Marks : 07 Semiconductors Semiconductors diode-- characteristics in forward and reverse bias, diode as rectifier. - characteristics of LED, Photodiodes, solarcell and Zener

More information

ELECTRONIC DEVICES AND CIRCUITS

ELECTRONIC DEVICES AND CIRCUITS ELECTRONIC DEVICES AND CIRCUITS 1. At room temperature the current in an intrinsic semiconductor is due to A. holes B. electrons C. ions D. holes and electrons 2. Work function is the maximum energy required

More information

VALLIAMMAI ENGINEERING COLLEGE

VALLIAMMAI ENGINEERING COLLEGE VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203 DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING QUESTION BANK III SEMESTER EC6202 - Electronic Devices and Circuits Regulation 2013

More information

Lesson Plan. Electronics 1-Total 51 Hours

Lesson Plan. Electronics 1-Total 51 Hours Lesson Plan. Electronics 1-Total 5s Unit I: Electrical Engineering materials:(10) Crystal structure & defects; Ceramic materials-structures, composites, processing and uses; Insulating laminates for electronics,

More information

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004 Lecture outline Historical introduction Semiconductor devices overview Bipolar Junction Transistor (BJT) Field

More information

I E I C since I B is very small

I E I C since I B is very small Figure 2: Symbols and nomenclature of a (a) npn and (b) pnp transistor. The BJT consists of three regions, emitter, base, and collector. The emitter and collector are usually of one type of doping, while

More information

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015 Q.2 a. By using Norton s theorem, find the current in the load resistor R L for the circuit shown in Fig.1. (8) Fig.1 IETE 1 b. Explain Z parameters and also draw an equivalent circuit of the Z parameter

More information

Scheme Q.1 Attempt any SIX of following 12-Total Marks 1 A) Draw symbol of P-N diode, Zener diode. 2 M Ans: P-N diode

Scheme Q.1 Attempt any SIX of following 12-Total Marks 1 A) Draw symbol of P-N diode, Zener diode. 2 M Ans: P-N diode Q. No. WINTER 16 EXAMINATION (Subject Code: 17321) Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in themodel answer scheme.

More information

Lecture 4 -- Tuesday, Sept. 19: Non-uniform injection and/or doping. Diffusion. Continuity/conservation. The five basic equations.

Lecture 4 -- Tuesday, Sept. 19: Non-uniform injection and/or doping. Diffusion. Continuity/conservation. The five basic equations. 6.012 ELECTRONIC DEVICES AND CIRCUITS Schedule -- Fall 1995 (8/31/95 version) Recitation 1 -- Wednesday, Sept. 6: Review of 6.002 models for BJT. Discussion of models and modeling; motivate need to go

More information

EBERS Moll Model. Presented by K.Pandiaraj Assistant Professor ECE Department Kalasalingam University

EBERS Moll Model. Presented by K.Pandiaraj Assistant Professor ECE Department Kalasalingam University EBERS Moll Model Presented by K.Pandiaraj Assistant Professor ECE Department Kalasalingam University BJT Device Models The primary function of a model is to predict the behaviour of a device in particular

More information

TRANSISTOR TRANSISTOR

TRANSISTOR TRANSISTOR It is made up of semiconductor material such as Si and Ge. Usually, it comprises of three terminals namely, base, emitter and collector for providing connection to the external circuit. Today, some transistors

More information

EJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre

EJERCICIOS DE COMPONENTES ELECTRÓNICOS. 1 er cuatrimestre EJECICIOS DE COMPONENTES ELECTÓNICOS. 1 er cuatrimestre 2 o Ingeniería Electrónica Industrial Juan Antonio Jiménez Tejada Índice 1. Basic concepts of Electronics 1 2. Passive components 1 3. Semiconductors.

More information

Scheme & Syllabus. B.Sc. Electronics. Honours Course. I st & II nd Semester. w.e.f. July Devi Ahilya Vishwavidyalaya, Indore (M.P.

Scheme & Syllabus. B.Sc. Electronics. Honours Course. I st & II nd Semester. w.e.f. July Devi Ahilya Vishwavidyalaya, Indore (M.P. Scheme & Syllabus of B.Sc. Electronics Honours Course I st & II nd Semester w.e.f. July 2011 Devi Ahilya Vishwavidyalaya, Indore (M.P.), 452001 SEMESTER SYSTEM, 2011-2014 PROPOSED SCHEME FOR B.Sc. ELECTRONICS

More information

Chapter 3 Bipolar Junction Transistors (BJT)

Chapter 3 Bipolar Junction Transistors (BJT) Chapter 3 Bipolar Junction Transistors (BJT) Transistors In analog circuits, transistors are used in amplifiers and linear regulated power supplies. In digital circuits they function as electrical switches,

More information

DEPARTMENT OF ECE BAPATLA ENGINEERING COLLEGE BAPATLA

DEPARTMENT OF ECE BAPATLA ENGINEERING COLLEGE BAPATLA DEPARTMENT OF ECE BAPATLA ENGINEERING COLLEGE BAPATLA Electronic Devices (EC-251) Lab Manual Prepared by S.Pallaviram, Lecturer T. Srinivasa Rao, Lecturer N.Kusuma, Lab Assistant Department of ECE BEC

More information

Electron Devices and Circuits (EC 8353)

Electron Devices and Circuits (EC 8353) Electron Devices and Circuits (EC 8353) Prepared by Ms.S.KARKUZHALI, A.P/EEE Diodes The diode is a 2-terminal device. A diode ideally conducts in only one direction. Diode Characteristics Conduction Region

More information

Diode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!

Diode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR! Diodes: What do we use diodes for? Lecture 5: Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double

More information

IENGINEERS- CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU

IENGINEERS- CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING Unit 1 Objectives Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called. (A) avalanche breakdown. (B) zener breakdown. (C) breakdown

More information

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number

More information

UNIT I Introduction to DC & AC circuits

UNIT I Introduction to DC & AC circuits SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: Basic Electrical and Electronics Engineering (16EE207) Year & Sem: II-B.

More information

BJT Amplifier. Superposition principle (linear amplifier)

BJT Amplifier. Superposition principle (linear amplifier) BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited

More information

Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device

More information

Basic Electronics Important questions

Basic Electronics Important questions Basic Electronics Important questions B.E-2/4 Mech- B Faculty: P.Lakshmi Prasanna Note: Read the questions in the following order i. Assignment questions ii. Class test iii. Expected questions iv. Tutorials

More information

Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.

Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A. Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Introduction: materials Conductors e.g. copper or aluminum have a cloud

More information

VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR

VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR 603 203. DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC8311 ELECTRONICS LABORATORY LAB MANUAL II Year - III Semester (2018 2019 ODD) Regulation

More information

Summer 2015 Examination. 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme.

Summer 2015 Examination. 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. Summer 2015 Examination Subject Code: 17213 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme.

More information

Alexandria University Faculty of Engineering Electrical Engineering Department

Alexandria University Faculty of Engineering Electrical Engineering Department Chapter 10: Alexandria University Faculty of Engineering Electrical Engineering Department ECE 336: Semiconductor Devices Sheet 6 1. A Si pnp BJT with N AE = 5x10 17 / cm 3, N DB = 10 15 /cm 3 and N AC

More information

CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN

CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN CHAPTER 3: BIPOLAR JUNCION TRANSISTOR DR. PHẠM NGUYỄN THANH LOAN Hanoi, 9/24/2012 Contents 2 Structure and operation of BJT Different configurations of BJT Characteristic curves DC biasing method and analysis

More information

Analog and Telecommunication Electronics

Analog and Telecommunication Electronics Politecnico di Torino - ICT School Analog and Telecommunication Electronics F2 Active power devices»mos»bjt» IGBT, TRIAC» Safe Operating Area» Thermal analysis 30/05/2012-1 ATLCE - F2-2011 DDC Lesson F2:

More information

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)

IENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) LONG QUESTIONS (10 MARKS) 1. Draw the construction diagram and explain the working of P-Channel JFET. Also draw the characteristics curve and transfer

More information

Code No: R Set No. 1

Code No: R Set No. 1 Code No: R05010204 Set No. 1 I B.Tech Supplimentary Examinations, Aug/Sep 2007 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering,

More information

Lesson Plan. Week Theory Practical Lecture Day. Topic (including assignment / test) Day. Thevenin s theorem, Norton s theorem

Lesson Plan. Week Theory Practical Lecture Day. Topic (including assignment / test) Day. Thevenin s theorem, Norton s theorem Name of the faculty: GYANENDRA KUMAR YADAV Discipline: APPLIED SCIENCE(C.S.E,E.E.ECE) Year : 1st Subject: FEEE Lesson Plan Lesson Plan Duration: 31 weeks (from July, 2018 to April, 2019) Week Theory Practical

More information

QUESTION BANK SUBJECT: ELECTRONIC DEVICES AND CIRCUITS

QUESTION BANK SUBJECT: ELECTRONIC DEVICES AND CIRCUITS QUESTION BANK SUBJECT: ELECTRONIC DEVICES AND CIRCUITS UNIT-I PN JUNCTION DIODE 1. Derive an expression for total diode current starting from Boltzmann relationship in terms of the applied voltage. Nov

More information

ECE 3040 Dr. Alan Doolittle.

ECE 3040 Dr. Alan Doolittle. ECE 3040 Dr. Alan Doolittle I have thoroughly enjoyed meeting each of you and hope that I have had a positive influence on your carriers. Please feel free to consult with me in your future work. If I can

More information

Lecture 3: Transistors

Lecture 3: Transistors Lecture 3: Transistors Now that we know about diodes, let s put two of them together, as follows: collector base emitter n p n moderately doped lightly doped, and very thin heavily doped At first glance,

More information

Solid State Devices- Part- II. Module- IV

Solid State Devices- Part- II. Module- IV Solid State Devices- Part- II Module- IV MOS Capacitor Two terminal MOS device MOS = Metal- Oxide- Semiconductor MOS capacitor - the heart of the MOSFET The MOS capacitor is used to induce charge at the

More information

Power Semiconductor Devices

Power Semiconductor Devices TRADEMARK OF INNOVATION Power Semiconductor Devices Introduction This technical article is dedicated to the review of the following power electronics devices which act as solid-state switches in the circuits.

More information

PHYS 3050 Electronics I

PHYS 3050 Electronics I PHYS 3050 Electronics I Chapter 4. Semiconductor Diodes and Transistors Earth, Moon, Mars, and Beyond Dr. Jinjun Shan, Associate Professor of Space Engineering Department of Earth and Space Science and

More information

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014

AE103 ELECTRONIC DEVICES & CIRCUITS DEC 2014 Q.2 a. State and explain the Reciprocity Theorem and Thevenins Theorem. a. Reciprocity Theorem: If we consider two loops A and B of network N and if an ideal voltage source E in loop A produces current

More information

Questions on JFET: 1) Which of the following component is a unipolar device?

Questions on JFET: 1) Which of the following component is a unipolar device? Questions on JFET: 1) Which of the following component is a unipolar device? a) BJT b) FET c) DJT d) EFT 2) Current Conduction in FET takes place due e) Majority charge carriers only f) Minority charge

More information

Three Terminal Devices

Three Terminal Devices Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering

More information

EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS

EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS 1. List the PN diode parameters. 1. Bulk Resistance. 2. Static Resistance/Junction Resistance (or) DC Forward Resistance 3. Dynamic

More information

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage

More information

PART-A UNIT I Introduction to DC & AC circuits

PART-A UNIT I Introduction to DC & AC circuits SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code : Basic Electrical and Electronics Engineering (16EE207)

More information

Introduction to semiconductor technology

Introduction to semiconductor technology Introduction to semiconductor technology Outline 7 Field effect transistors MOS transistor current equation" MOS transistor channel mobility Substrate bias effect 7 Bipolar transistors Introduction Minority

More information

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s. UNIT-I FIELD EFFECT TRANSISTOR 1. Explain about the Field Effect Transistor and also mention types of FET s. The Field Effect Transistor, or simply FET however, uses the voltage that is applied to their

More information

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate

More information

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) 4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.

More information

FIELD EFFECT TRANSISTORS MADE BY : GROUP (13)/PM

FIELD EFFECT TRANSISTORS MADE BY : GROUP (13)/PM FIELD EFFECT TRANSISTORS MADE BY : GROUP (13)/PM THE FIELD EFFECT TRANSISTOR (FET) In 1945, Shockley had an idea for making a solid state device out of semiconductors. He reasoned that a strong electrical

More information

SIR PADAMPAT SINGHANIA UNIVERSITY

SIR PADAMPAT SINGHANIA UNIVERSITY SIR PADAMPAT SINGHANIA UNIVERSITY SCHOOL OF ENGINEERING BHATEWAR-3360 ELECTRONIC DEVICES AND CIRCUITS LABORATORY MANUAL DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING [[ Objective: ) P-N JUNCTION

More information

Osmania University B.Sc Electronics - Syllabus (under CBCS w.e.f ) I ST and II nd Year

Osmania University B.Sc Electronics - Syllabus (under CBCS w.e.f ) I ST and II nd Year Osmania University B.Sc Electronics - Syllabus (under CBCS w.e.f 2016-2017) I ST and II nd Year UNIT - I B.Sc. ELECTRONICS SYLLABUS B.Sc. I YEAR Semester - I DSC- Paper I : Circuit Analysis Total number

More information

ECE321 Electronics I Fall 2006

ECE321 Electronics I Fall 2006 ECE321 Electronics I Fall 2006 Professor James E. Morris Lecture 11 31 st October, 2006 Bipolar Junction Transistors (BJTs) 5.1 Device Structure & Physics 5.2 I-V Characteristics Convert 5.1 information

More information

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved. Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the

More information

Bipolar Junction Transistors (BJTs) Overview

Bipolar Junction Transistors (BJTs) Overview 1 Bipolar Junction Transistors (BJTs) Asst. Prof. MONTREE SIRIPRUCHYANUN, D. Eng. Dept. of Teacher Training in Electrical Engineering, Faculty of Technical Education King Mongkut s Institute of Technology

More information

Digital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices

Digital Integrated Circuits A Design Perspective. The Devices. Digital Integrated Circuits 2nd Devices Digital Integrated Circuits A Design Perspective The Devices The Diode The diodes are rarely explicitly used in modern integrated circuits However, a MOS transistor contains at least two reverse biased

More information

SEMICONDUCTOR EECTRONICS MATERIAS, DEVICES AND SIMPE CIRCUITS Important Points: 1. In semiconductors Valence band is almost filled and the conduction band is almost empty. The energy gap is very small

More information

EC8351-ELECTRON DEVICES AND CIRCUITS TWO MARK QUESTIONS AND ANSWERS UNIT-I PN JUNCTION DEVICES

EC8351-ELECTRON DEVICES AND CIRCUITS TWO MARK QUESTIONS AND ANSWERS UNIT-I PN JUNCTION DEVICES TWO MARK QUESTIONS AND ANSWERS UNIT-I PN JUNCTION DEVICES 1) Define semiconductor. Semiconductor is a substance, which has resistivity in between Conductors and insulators. Eg. Germanium, Silicon. 2) Define

More information