Fundamentals of Power Semiconductor Devices

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1 В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer

2 Contents Preface vii Chapter 1 Introduction Ideal and Typical Power Switching Waveforms Ideal and Typical Power Device Characteristics Unipolar Power Devices Bipolar Power Devices MOS-Bipolar Power Devices Ideal Drift Region for Unipolar Power Devices Charge-Coupled Structures: Ideal Specific On-Resistance Summary 21 Problems 21 References 22 Chapter 2 Material Properties and Transport Physics Fundamental Properties Intrinsic Carrier Concentration Bandgap Narrowing Built-in Potential Zero-Bias Depletion Width Impact Ionization Coefficients Carrier Mobility Resistivity Intrinsic Resistivity Extrinsic Resistivity Neutron Transmutation Doping Recombination Lifetime 59

3 xvi FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES Shockley-Read-Hall Recombination Low-Level Lifetime Space-Charge Generation Lifetime Recombination Level Optimization Lifetime Control Auger Recombination Ohmic Contacts Summary 84 Problems 84 References 86 Chapter 3 Breakdown Voltage Avalanche Breakdown Power Law Approximations for the Impact Ionization Coefficients Multiplication Coefficient Abrupt One-Dimensional Diode Ideal Specific On-Resistance Abrupt Punch-Through Diode Linearly Graded Junction Diode Edge Terminations Planar Junction Termination Planar Junction with Floating Field Ring Planar Junction with Multiple Floating Field Rings Planar Junction with Field Plate Planar Junction with Field Plates and Field Rings Bevel Edge Terminations Etch Terminations Junction Termination Extension Open-Base Transistor Breakdown Composite Bevel Termination Double-Positive Bevel Termination Surface Passivation Summary 162 Problems 163 References 164 Chapter 4 Schottky Rectifiers Power Schottky Rectifier Structure Metal-Semiconductor Contact Forward Conduction Reverse Blocking Leakage Current Schottky Barrier Lowering Prebreakdown Avalanche Multiplication 184

4 Contents xvii Silicon Carbide Rectifiers Device Capacitance Thermal Considerations Fundamental Tradeoff Analysis Device Technology Barrier Height Adjustment Edge Terminations Summary 198 Problems 199 References 200 Chapter 5 P-i-N Rectifiers One-Dimensional Structure Recombination Current Low-Level Injection Current High-Level Injection Current Injection into the End Regions Carrier-Carrier Scattering Effect Auger Recombination Effect Forward Conduction Characteristics Silicon Carbide P-i-N Rectifiers Reverse Blocking Switching Performance Forward Recovery Reverse Recovery P-i-N Rectifier Structure with Buffer Layer Nonpunch-Through P-i-N Rectifier Structure P-i-N Rectifier Tradeoff Curves Summary 274 Problems 275 References 276 Chapter 6 Power MOSFETs Ideal Specific On-Resistance Device Cell Structure and Operation The V-MOSFET Structure The VD-MOSFET Structure The U-MOSFET Structure Basic Device Characteristics Blocking Voltage Impact of Edge Termination Impact of Graded Doping Profile Impact of Parasitic Bipolar Transistor Impact of Cell Pitch 293

5 xviii FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES Impact of Gate Shape Impact of Cell Surface Topology Forward Conduction Characteristics MOS Interface Physics MOS Surface Charge Analysis Maximum Depletion Width Threshold Voltage Channel Resistance Power VD-MOSFET On-Resistance Source Contact Resistance Source Region Resistance Channel Resistance Accumulation Resistance JFET Resistance Drift Region Resistance ST Substrate Resistance Drain Contact Resistance Total On-Resistance Power VD-MOSFET Cell Optimization Optimization of Gate Electrode Width Impact of Breakdown Voltage Impact of Design Rules Impact of Cell Topology Power U-MOSFET On-Resistance Source Contact Resistance Source Region Resistance Channel Resistance Accumulation Resistance Drift Region Resistance N + Substrate Resistance Drain Contact Resistance Total On-Resistance Power U-MOSFET Cell Optimization Orthogonal P-Base Contact Structure Impact of Breakdown Voltage Ruggedness Improvement Square-Law Transfer Characteristics Superlinear Transfer Characteristics Output Characteristics Device Capacitances Basic MOS Capacitance Power VD-MOSFET Structure Capacitances Power U-MOSFET Structure Capacitances Equivalent Circuit 408

6 Contents xix 6.14 Gate Charge Charge Extraction Voltage and Current Dependence VD-MOSFET vs. U-MOSFET Structure Impact of VD-MOSFET and U-MOSFET Cell Pitch Optimization for High Frequency Operation Input Switching Power Loss Output Switching Power Loss Gate Propagation Delay Switching Characteristics Turn-On Transient Turn-Off Transient Switching Power Losses [dv/dt] Capability Safe Operating Area Bipolar Second Breakdown MOS Second Breakdown Integral Body Diode Reverse Recovery Enhancement Impact of Parasitic Bipolar Transistor High-Temperature Characteristics Threshold Voltage On-Resistance Saturation Transconductance Complementary Devices The p-channel Structure On-Resistance Deep-Trench Structure Silicon Power MOSFET Process Technology Planar VD-MOSFET Process Trench U-MOSFET Process Silicon Carbide Devices The Baliga-Pair Configuration Planar Power MOSFET Structure Shielded Planar Power MOSFET Structures Shielded Trench-Gate Power MOSFET Structure Summary 498 Problems 499 References 503 Chapter 7 Bipolar Junction Transistors Power Bipolar Junction Transistor Structure Basic Operating Principles Static Blocking Characteristics 513

7 xx FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES Open-Emitter Breakdown Voltage Open-Base Breakdown Voltage Shorted Base-Emitter Operation Current Gain Emitter Injection Efficiency Emitter Injection Efficiency with Recombination in the Depletion Region Emitter Injection Efficiency with High-Level Injection in the Base Base Transport Factor Base Widening at High Collector Current Density Emitter Current Crowding Low-Level Injection in the Base High-Level Injection in the Base Emitter Geometry Output Characteristics On-State Characteristics Saturation Region Quasisaturation Region Switching Characteristics Turn-On Transition Turn-Off Transition Safe Operating Area Forward-Biased Second Breakdown Reverse-Biased Second Breakdown Boundary for Safe Operating Area Darlington Configuration Summary 619 Problems 619 References 621 Chapter 8 Thyristors Power Thyristor Structure and Operation Blocking Characteristics Reverse-Blocking Capability Forward-Blocking Capability Cathode Shorting Cathode Shorting Geometry On-State Characteristics On-State Operation Gate-Triggering Current Holding Current Switching Characteristics Turn-On Time : 663

8 Contents xxi Gate Design Amplifying Gate Design [dv/dt] Capability Turn-Off Process Light-Activated Thyristors [dl/dt] Capability Gate Region Design Optically Generated Current Density Amplifying Gate Design Self-Protected Thyristors Forward Breakdown Protection [dv/dt] Turn-On Protection The Gate Turn-Off Thyristor Strueture Basic Strueture and Operation One-Dimensional Turn-Off Criterion One-Dimensional Storage Time Analysis Two-Dimensional Storage Time Model One-Dimensional Voltage Rise Time Model One-Dimensional Current Fall Time Model Switching Energy Loss Maximum Turn-Off Current Cell Design and Layout The Triac Structure Basic Structure and Operation Gate-Triggering Mode Gate-Triggering Mode [dv/dt] Capability Summary 733 Problems 733 References 735 Chapter 9 Insulated Gate Bipolar Transistors Basic Device Structures Device Operation and Output Characteristics Device Equivalent Circuit Blocking Characteristics Symmetric Structure Forward-Blocking Capability Symmetric Structure Reverse-Blocking Capability Symmetric Structure Leakage Current Asymmetric Structure Forward-Blocking Capability Asymmetric Structure Reverse-Blocking Capability Asymmetric Structure Leakage Current On-State Characteristics On-State Model 776

9 xxii FUNDAMENTALS OF POWER SEMICONDUCTOR DEVICES On-State Carrier Distribution: Symmetric Structure On-State Voltage Drop: Symmetric Structure On-State Carrier Distribution: Asymmetric Structure On-State Voltage Drop: Asymmetric Structure On-State Carrier Distribution: Transparent Emitter Structure On-State Voltage Drop: Transparent Emitter Structure Current Saturation Model Carrier Distribution: Symmetric Structure Output Characteristics: Symmetric Structure Output Resistance: Symmetric Structure Carrier Distribution: Asymmetric Structure Output Characteristics: Asymmetric Structure Output Resistance: Asymmetric Structure Carrier Distribution: Transparent Emitter Structure Output Characteristics: Transparent Emitter Structure Output Resistance: Transparent Emitter Structure Switching Characteristics Turn-On Physics: Forward Recovery Turn-Off Physics: No-Load Conditions Turn-Off Physics: Resistive Load Turn-Off Physics: Inductive Load Energy Loss per Cycle Power Loss Optimization Symmetric Structure Asymmetric Structure Transparent Emitter Structure Comparison of Tradeoff Curves Complementary (P-Channel) Structure On-State Characteristics Switching Characteristics Power Loss Optimization Latch-Up Suppression Deep P + Diffusion Shallow P + Layer Reduced Gate Oxide Thickness Bipolar Current Bypass Diverter Structure Cell Topology Latch-Up Proof Structure Safe Operating Area Forward-Biased Safe Operating Area Reverse-Biased Safe Operating Area Short-Circuit Safe Operating Area 960

10 Contents xxiii 9.12 Trench-Gate Structure Blocking Mode On-State Carrier Distribution On-State Voltage Drop Switching Characteristics Safe Operating Area Modified Structures Blocking Voltage Scaling N-Base Design Power MOSFET Baseline On-State Characteristics Tradeoff Curve High Temperature Operation On-State Characteristics Latch-Up Characteristics Lifetime Control Techniques Electron Irradiation Neutron Irradiation Helium Irradiation Cell Optimization Planar-Gate Structure Trench-Gate Structure Reverse Conducting Structure Summary 1014 Problems 1015 References 1020 Chapter 10 Synopsis Typical H-Bridge Topology, Power Loss Analysis Low DC Bus Voltage Applications Medium DC Bus Voltage Applications High DC Bus Voltage Applications Summary 1045 Problems 1045 References 1047 Author's Biography 1049 Index 1053

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