UOTFT: Universal Organic TFT Model for Circuit Design
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1 UOTFT: Universal Organic TFT Model for Circuit Design S. Mijalković, D. Green, A. Nejim Silvaco Europe, St Ives, Cambridgeshire, UK A. Rankov, E. Smith, T. Kugler, C. Newsome, J. Halls Cambridge Display Technologies, Godmanchester, UK
2 Overview Introduction - organic electronics as a challenge for EDA - TSB Project PMOS UOTFT Model Description - objectives and close relatives - model features - physics behind the model - UCCM for OTFTs - intrinsic drain-source current Model verification - DC characteristic and temperature scaling for different OSC materials and device architectures
3 Organic Electronics: Challenge for Electronic Design Automation (EDA) o Inorganic semiconductor industry relies extensively on EDA software to support the iterative cycles of process, device and circuit technology improvements. o To further develop organic electronics industry, equivalent design tools are needed. o EDA tools essentially depend on numerical and compact device models which are, in case of OSCs, not yet matured and quite sparsely implemented in commercial EDA tools. o Cambridge Display Technology (CDT) and Silvaco Europe have joined forces in a TSB funded project entitled PMOS to enhance EDA tools for use in the organic electronics.
4 UK Technology Strategy Board (TSB) Project: Physical Modelling of Organic Semiconductors (PMOS) Project partners Cambridge Display Technology (CDT) Expert in polymer light emitting diode (PLED) technologies. Leader in development of solution processable (printable) organic. semiconductors for display fabrication. Expertise in development of PLED materials and deposition processes. Silvaco Leading provider of TCAD and EDA software for IC design Provides established products for TCAD process and device simulation, spice modelling and parameter extraction, circuit simulation, custom IC design and verification. Project ac'vi'es o Design of OTFT devices using physical TCAD modelling. o OTFT spice model development o Measurements and modelling of device reliability and aging effects. o The focus is on display device (OLED) drivers as these will be the first large scale organic semiconductor products.
5 UOTFT Model: Objectives and Close Relatives Objectives: o physical (charge or surface potential based) compact model dedicated to OTFTs o small number of ease to extract parameters o compatible to simple Vth-based OTFT models in over-threshold region o suitable for different OSC materials and OTFT device architectures Universal FET Modelling Approach Prof. Michael Shur et al. Prof. Benjamin Iñiguez et al. MOSA1, NPMOSA1-3, etc. Silicon Mosfets, Hfet, Mesfet AIM-Spice Number of Parameters Level 1 Level 2 Bsim Level 3 Bsim2 MM9 PSP Bsim4 UOTFT RPI Thin-Film Transistor Models Amorphous and Polysilicon TFTs AIM-Spice, Spectre, Hspice, SmartSpice UOTFT Organic TFTs SmartSpice Year
6 UOTFT Model Features: Original (Checked) and Common with RPI (Dots) Model Features Intrinsic Model: an accurate implementation of the UCCM for OTFTs operating in the channel accumulation mode in the presence of the exponential density of states and interface traps. a universal power mobility law valid in all operation regions the smooth interpolation of the drain current between linear and saturation operation regions including the channel length modulation effect physical description of the drift and diffusion drain-source current components implicit non-linear gate bias dependent parasitic resistance model drain-source leakage current model (RPI) a unified Meyer s capacitance model (RPI) Leroux s charge model (extended RPI in SmartSpice) a physical temperature scaling of the model parameters Extrinsic Model: explicit source and drain contact series resistances a thermal network for the modeling of self-heating effects extrinsic RC network for the behavioral modeling of frequency dispersion effects (RPI) overlap capacitances (RPI) noise model (extended RPI in SmartSpice) temperature scaling of contact series resistances
7 Physics Behind UOTFT: Carrier Concentration and OSC Conductivity Exponen'al DOS distribu'on Percola'on Theory Vissenberg and Ma:ers, Phys. Rev. B, 1998.
8 UOTFT Electrostatics: Unified Charge Control Model (UCCM) for OTFTs Surface Potential Description UCCM
9 UOTFT Electrostatics: Accurate Implementation of UCCM UCCM Exact SP Model A.I.A. Cunha, "A model of the MOS transistor for integrated circuit design", Ph.D. Thesis, UFSC, December, 1996
10 UOTFT Effective Conductivity (Mobility) Model: Applied Percolation Theory Exact Model
11 UOTFT DC Model: Intrinsic Drain-Source Current drift diffusion
12 Parameter Extraction in UTMOST IV
13 Model Verification: Bottom Gate Bottom Contact (BGBC) OTFT Devices (3 rd party OSC material: material A) Comparison between simulated (lines) and measured (circles) transfer characteristics of the OTFT in the linear operation region with Vds=-3V (blue line and circles) and saturation operation region with Vds=-30V (red line and circles) Comparison between simulated (lines) and measured (circles) output characteristics of the OTFT for Vg=-10V, -20V, -30V and -40V.
14 Model verification: Top Gate Bottom Contact (TGBC) OTFT Devices (3 rd party OSC material: material B) Comparison between simulated (lines) and measured (circles) transfer (Vds=-30V) and output characteristics of the OTFT with a polymer OSC.
15 Model Verification: Temperature Scaling (BGBC and TGBC with different 3 rd party OSC materials) Comparison between simulated (lines) and measured (circles) transfer characteristics for two different device architectures and two different materials in the saturation operation region at different temperatures T=270K (dark blue) T=280K (light blue) T=300K (green) T=310K (pink) T=330K (red) OSC material: A BGBC structure OSC material: B TGBC structure OSC material: B TGBC structure
16 UOTFT Model Features Under Development: The Next Six-Month-Roadmap Gate leakage-current model - Poole-Frenkel trap assisted tunneling in the insulator. - Source/drain partitioning scheme. - Temperature dependence of the model parameter. Physical drain-source leakage current - Advanced temperature scaling of the leakage current model parameters Short channel effects - improved channel length modulation model, - effects of the depletion and strong lateral electric field on the drain side, - space-charge limited transport. Effective channel conductivity for poly-crystalline OSC materials - effective poly-crystalline mobility
17 Acknowledgement We want to thank Prof. Benjamin Iñiguez and his group for valuable recommendations regarding compact organic TFT modelling. This work is supported by the UK Technology Strategy Board through the PMOS project TP/J2519J.
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