ASM GaN HEMT: Advanced SPICE Model for GaN HEMTs
|
|
|
- Dana Hampton
- 6 years ago
- Views:
Transcription
1 ASM GaN HEMT: Advanced SPICE Model for GaN HEMTs Sourabh Khandelwal, T. A. Fjeldly, B. Iniguez, Y. S. Chauhan, S. Ghosh, A. Dasgupta MOS-AK 2014 Sourabh Khandelwal MOS-AK
2 Outline ASM-HEMT Model Background Model Description Overview 2-DEG Charge Density & Surface-Potential Model Drain-Current, Gate-Current Model Charge and Capacitance Model Flicker Noise and Thermal Noise Models Model Results Model Parameter Extraction DC I-V Results: Drain and Gate-Current On industry data S-parameter validation for multiple DC bias points Power Sweep Harmonic Balance Simulation Results Model Quality Testing Gummel DC and AC Symmetry Physical behavior of capacitances Conclusions Sourabh Khandelwal MOS-AK
3 ASM-HEMT Model Background Started as PhD Thesis Work at UNIK/NTNU, Norway Sourabh Khandelwal and Prof. Tor A. Fjeldly Compact Modeling Solutions for Advanced Semiconductor Devices PhD Thesis NTNU 2013:248 EU Project COMON In Collaboration with Prof. B. Iniguez, URV Spain Prof. Yogesh S. Chauhan, IIT Kanpur Model passed into the Phase-II for standardization at the Compact Model Coalition (CMC) Two sponsor companies Sourabh Khandelwal MOS-AK
4 ASM-HEMT Model Overview Schrӧdiger s & Poisson s solution for core SP calculation Drain current model includes all the important real device effects Velocity Saturation, DIBL, Mobility Degradation, Temperature effects, Non-linear access region resistances, SS degradation Gate Current Model Frenkel-Poole Mechanism Self-Heating Effect Model Model for Trapping effects Flicker Noise Model Thermal Noise Model Sourabh Khandelwal MOS-AK
5 ASM-HEMT Model Overview Analytical Solution of Schrӧdiger s & Poisson s 2-DEG Charge Fermi-level (Ef), Surface-potential (SP) SP-Based I d I g & ChargeModel Real Device effects included Accurate I-V and C-V Physical parameters DIBL, Rs, VS,... Noise Model, Trapping Effects Model, Self-Heating DC, AC, Transient Harmonic Simulations, Noise Sourabh Khandelwal MOS-AK
6 Surface-Potential Modeling Basic device equations are transcendental in nature We divide variation of E f with V g into regions to develop fully analytical expression Regional models are combined in one analytical expression No fitting parameters introduced Sourabh Khandelwal MOS-AK
7 Surface-Potential Model ψ = E + V sd / fsd, / sd / S. Khandelwal et al. IEEE TED vol. 59, no. 10, 2012 Sourabh Khandelwal MOS-AK
8 Drain-Current Model Core Drain Current Model Velocity-Field relation and mobility-degradation Sourabh Khandelwal MOS-AK
9 Access Region Resistance S G AlGaN GaN D Non-linear model for access region resistances Accounts for velocity saturation in access region G Intrinsic S Rs = f(vg, Vd) D Rd = f(vg, Vd) Sourabh Khandelwal MOS-AK
10 Self-Heating Model Temperature Temperature Dependent Parameters, calculations in the model Pd Rth Cth Self-Heating effect model in ASM-HEMT Sourabh Khandelwal MOS-AK
11 Intrinsic Charge Modeling Surface-Potential Based Charge Expressions Consistent I-V and C-V calculations Ward-Dutton Partioning for source and drain charges L ( ) Q = Wqn V, V. dx g s g x 0 L x Q = Wqn V, V. dx ( ) d s g x L 0 L x Q = 1 Wqn ( V, V ). dx s s g x L 0 Charge Conservation Sourabh Khandelwal MOS-AK
12 Intrinsic Charge Modeling Sourabh Khandelwal MOS-AK
13 Intrinsic Charge Modeling Analytical Expressions for all terminal charges All Device Capacitances: CC iiii = Correct physical behavior of capacitances Parasitic Capacitances added to intrinsic capacitance model Sourabh Khandelwal MOS-AK
14 Gate Current Model Reverse Gate Leakage Mechanism Frenkel-Poole Model Surface-Potential-Based Forward Gate Current Sourabh Khandelwal MOS-AK
15 Flicker Noise Model L= 0.7 um GaN Device L=0.35 um GaAs device Sourabh Khandelwal MOS-AK
16 Thermal Noise Model Sourabh Khandelwal MOS-AK
17 Model Inputs and Parameters Physical Constants D, q,... Simulation Conditions Vg, Vd, T... Device Dimensions L, W, d,.. Physically-Linked Model Parameters Parameter U0 UA UB VOFF VSAT RTH DIBL VOFFT UTE RS RD Physical Meaning Low field Mobility Mobility degradation parameter Mobility degradation parameter Cut-off Voltage of Device Saturation Velocity Thermal Resistance DIBL effect parameter Temperature dependence of Voff Mobility dependence of mu0 Source Side Resistance Drain Side Resistance... Sourabh Khandelwal MOS-AK
18 Model Parameter Extraction Extraction flow similar to standard physics-based models Parameters linked to physical effects Set L, W, NF, Tbar Device Dimensions Obtain LAMBDA, Improve VSAT, ETA from IDVD Obtain VOFF, NF, CDSCD, ETA from log-idvg, LINEAR And Saturation Temperature Parameters Obtain U0, UA, UB and RDS from IDVG-LIN Capacitance Modeling Obtain VSAT, Improve ETA From LINEAR IDVG Noise Modeling Sourabh Khandelwal MOS-AK
19 GaN Model Results DC I-V Calibration for Channel Lengths L = 1 um and L = 0.7 um Sourabh Khandelwal MOS-AK
20 DC Fitting Results with Industry Data Sourabh Khandelwal MOS-AK
21 IDVG for various VDS VD1 VD2 VD3 VD4 VD5
22 Sub-threshold ID for various VD VD3 VD1 VD2 VD4 VD5
23 GMVG for various VD VD1 VD3 VD2 VD4 VD5
24 GM VG for various VD VD1 VD2 VD3 VD4 VD5
25 GM VG for various VD Smooth, Continuous and Accurate ID and its derivatives VD1 VD2 VD3 VD4 VD5
26 S-Parameter Data Fitting Results
27 S-parameter Fitting Vs Bias1 S11 S22 S12 S21
28 S-parameter Fitting Vs Bias1 Ph-S11 Ph-S22 Ph-S12 Ph-S21
29 S-parameter Fitting Vs Bias1 H21 K Max Gain
30 S-parameter Fitting Vs Bias2 S11 S22 S12 S21
31 S-parameter Fitting Vs Bias2 Ph-S11 Ph-S22 Ph-S12 Ph-S21
32 S-parameter Fitting Vs Bias2 H21 K Max-Gain
33 RF Power Sweep GaN Device Tuned for maximum power
34 Harmonic Balance Results Accurate Pout and PIM3 prediction by model at various bias points S. Khandelwal et al., IEEE MTT, vol. 61, no. 9, 2013 Sourabh Khandelwal MOS-AK
35 Model Quality: Gummel Symmetry Test Symmetric, Continuous and Smooth Model Behavior Sourabh Khandelwal MOS-AK
36 Model Quality: Capacitances Model Passes Gummel AC Symmetry Tests δ cg = C C GS GS C + C GD GD δδ cccccc = CC SSSS CC DDDD CC SSSS + CC DDDD Sourabh Khandelwal MOS-AK
37 Model Quality: Capacitances Correct Physical behavior of capacitances Sourabh Khandelwal MOS-AK
38 Conclusions Physics-based Model for GaN HEMTs presented Schrodinger s and Poisson s based surface-potential analytical calculation Drain and Gate Current Charges and Capacitances Model Real Device effects (CLM, DIBL, Self-Heating etc.) included Flicker Noise and Thermal Noise models Excellent Agreement with industry quality measured data DC, S-parameters, Power Sweep Model passes important quality test Gummel Symmetry, AC Symmetry, Harmonic Balance etc. Sourabh Khandelwal MOS-AK
39 References 1. Sourabh Khandelwal, Chandan Yadav, Shantanu Agnihotri, Yogesh Singh Chauhan, Arnaud Curutchet, Thomas Zimmer, Jean-Claude Dejaeger, Nicolas Defrance, and Tor A. Fjeldly, "A robust surface-potential-based compact model for GaN HEMT IC design", IEEE Trans. Electron Devices, vol. 60, no. 10, pp , Sourabh Khandelwal, and Tor A. Fjeldly, "Analysis of Drain-Current Nonlinearity Using Surface-Potential-Based Model in GaAs phemts", IEEE Trans. Microwave Theory and Tech., vol. 61, no. 9, pp , Sep Sourabh Khandelwal, Yogesh Singh Chauhan and Tor A. Fjeldly, "Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices", IEEE Trans. Electron. Devices vol. 59, no. 10 pp , Oct Sourabh Khandelwal, Nitin Goyal, and Tor A. Fjeldly, "A Physics based analytical model for 2-DEG charge density in AlGaN/GaN HEMT devices", IEEE Trans. Electron Devices vol. 58, no. 10 pp , Oct S. Khandelwal and Tor A. Fjeldly, "A surface-potential-based compact model for study of non-linearities in AlGaAs/GaAs HEMTs", Proc. Compound Semiconductor IC Symp., pp. 1-4, Oct. 2012, San Diego, USA. 6. A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, Compact Modeling of flicker noise in HEMTs JEDS S. Ghosh, A. Dasgupta, S. Khandelwal, et al. Surface-potential-based compact modeling of gate current in AlGaN/GaN HEMTs IEEE TED 2014 Sourabh Khandelwal MOS-AK
40 Thank You for Attention! Sourabh Khandelwal MOS-AK
GaN HEMT SPICE Model Standard for Power & RF. Samuel Mertens MOS-AK Workshop Washington, DC December 9, 2015
GaN HEMT SPICE Model Standard for Power & RF Samuel Mertens MOS-AK Workshop Washington, DC December 9, 2015 Compact Model Coalition @SI2 Standardizing Compact Models Since 1996 Started with BSIM3 Support
ASM-GaN: Industry Standard GaN HEMT Compact Model for Power-Electronics and RF Applications
ASM-GaN: Industry Standard GaN HEMT Compact Model for Power-Electronics and RF Applications Dr. Yogesh S. Chauhan Associate Professor, Dept. of EE, IIT Kanpur, India *Editor of IEEE Trans. on Electron
& ) > 35W, 33-37% PAE
Outline Status of Linear and Nonlinear Modeling for GaN MMICs Presented at IMS11 June, 11 Walter R. Curtice, Ph. D. Consulting www.curtice.org State of the Art Modeling considerations, types of models,
GaN HEMT SPICE Model Standard for Power & RF. Samuel Mertens Si2Con San Jose, CA October 6, 2015
GaN HEMT SPICE Model Standard for Power & RF Samuel Mertens Si2Con San Jose, CA October 6, 2015 Compact Model Coalition @SI2 Standardizing Compact Models Since 1996 Started with BSIM3 Support standardization
PSP model update. Gert-Jan Smit, Andries Scholten, D.B.M. Klaassen (NXP Semiconductors) Ramses van der Toorn (Delft University of Technology)
PSP model update Gert-Jan Smit, Andries Scholten, D.B.M. Klaassen (NXP Semiconductors) Ramses van der Toorn (Delft University of Technology) MOS-AK, San Francisco 12 December 2012 outline some history
Fundamental Failure Mechanisms Limiting Maximum Voltage Operation in AlGaN/GaN HEMTs. Michael D. Hodge, Ramakrishna Vetury, and Jeffrey B.
Fundamental Failure Mechanisms Limiting Maximum Voltage Operation in AlGaN/GaN HEMTs Michael D. Hodge, Ramakrishna Vetury, and Jeffrey B. Shealy Purpose Propose a method of determining Safe Operating Area
Review of Power Electronic Device Models
Review of Power Electronic Device Models September, 2014 EEsof EDA Power Electronics: Diverse Application Space Power Device Models Page 2 Diverse Material Systems and Device Technologies Silicon
COMON De-Briefing. Prof. Benjamin Iñiguez
COMON De-Briefing Prof. Benjamin Iñiguez Department of Electronic, Electrical and Automatic Control Engineering, Universitat Rovira i Virgili (URV) Tarragona, Spain benjamin.iniguez@urv.cat MOS-AK, Munich,
A new nonlinear HEMT model allowing accurate simulation of very low IM 3 levels for high-frequency highly linear amplifiers design
A new nonlinear HEMT model allowing accurate simulation of very low IM 3 levels for high-frequency highly linear amplifiers design J. Lhortolary 1, C. Chang 1, T. Reveyrand 2, M. Camiade 1, M. Campovecchio
UOTFT: Universal Organic TFT Model for Circuit Design
UOTFT: Universal Organic TFT Model for Circuit Design S. Mijalković, D. Green, A. Nejim Silvaco Europe, St Ives, Cambridgeshire, UK A. Rankov, E. Smith, T. Kugler, C. Newsome, J. Halls Cambridge Display
Contents. Contents... v. Preface... xiii. Chapter 1 Introduction...1. Chapter 2 Significant Physical Effects In Modern MOSFETs...
Contents Contents... v Preface... xiii Chapter 1 Introduction...1 1.1 Compact MOSFET Modeling for Circuit Simulation...1 1.2 The Trends of Compact MOSFET Modeling...5 1.2.1 Modeling new physical effects...5
Full Development Chain of Compact Modeling
Full Development Chain of Compact Modeling Prof. Benjamin Iñ ñiguez, Department of Electronic, Electrical and Automatic Control Engineering Tarragonaa benjamin.iniguez@ @urv.cat EU COMON Project Who are
Pulse IV and pulsed S-parameter Parametric Analysis with AMCAD PIV & AGILENT PNA-X
Pulse IV and pulsed S-parameter Parametric Analysis with AMCAD PIV & AGILENT PNA-X Tony Gasseling gasseling@amcad-engineering.com 1 Components PA Design Flow Measurement system Measurement Data base Circuits
Customized probe card for on-wafer testing of AlGaN/GaN power transistors
Customized probe card for on-wafer testing of AlGaN/GaN power transistors R. Venegas 1, K. Armendariz 2, N. Ronchi 1 1 imec, 2 Celadon Systems Inc. Outline Introduction GaN for power switching applications
Customized probe card for on wafer testing of AlGaN/GaN power transistors
Customized probe card for on wafer testing of AlGaN/GaN power transistors R. Venegas 1, K. Armendariz 2, N. Ronchi 1 1 imec, 2 Celadon Systems Inc. Presented by Bryan Root 2 Outline Introduction GaN for
A Spline Large-Signal FET Model Based on Bias-Dependent Pulsed I V Measurement
2598 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 50, NO. 11, NOVEMBER 2002 A Spline Large-Signal FET Model Based on Bias-Dependent Pulsed I V Measurement Kyoungmin Koh, Hyun-Min Park, and
How is a CMC Standard Model Implemented And Verified in a Simulator?
How is a CMC Standard Model Implemented And Verified in a Simulator? MOS-AK Workshop, Jushan Xie Vice Chairman of the CMC Senior Architect, Cadence Design Systems, Inc. 1 Content Benefit of CMC standard
Performance Limitations of Varactor Multipliers.
Page 312 Fourth International Symposium on Space Terahertz Technology Performance Limitations of Varactor Multipliers. Jack East Center for Space Terahertz Technology, The University of Michigan Erik Kollberg
8. Characteristics of Field Effect Transistor (MOSFET)
1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors
Large-signal PHEMT and HBT modeling for power amplifier applications. Ce-Jun Wei Skyworks Inc. Sept
Large-signal PHEMT and HBT modeling for power amplifier applications Ce-Jun Wei Skyworks Inc. Sept. 9 2002 Agenda Introduction Phemt modeling issues Empirical model vs table-based model; Charge model vs
RF Noise Simulation for Submicron MOSFET s Based on Hydrodynamic Model
RF Noise Simulation for Submicron MOSFET s Based on Hydrodynamic Model Jung-Suk Goo, Chang-Hoon Choi, Eiji Morifuji, Hisayo Sasaki Momose, Zhiping Yu, Hiroshi Iwai, Thomas H. Lee, and Robert W. Dutton,
Accuracy and Speed Performance of HiSIM Versions 231 and 240
Accuracy and Speed Performance of HiSIM Versions 231 and 240 H.J. Mattausch, M. Miura-Mattausch, N. Sadachika, M. Miyake Graduate School of Advanced Sciences of Matter, Hiroshima University T. Iizuka NEC
Assessing the MVS Model for Nanotransistors (August 2013)
1 Assessing the MVS Model for Nanotransistors (August 2013) Siyang Liu, Xingshu Sun and Prof. Mark Lundstrom Abstract A simple semi-empirical compact MOSFET model has been developed, which is called MIT
Sub-Threshold Region Behavior of Long Channel MOSFET
Sub-threshold Region - So far, we have discussed the MOSFET behavior in linear region and saturation region - Sub-threshold region is refer to region where Vt is less than Vt - Sub-threshold region reflects
High Power Wideband AlGaN/GaN HEMT Feedback. Amplifier Module with Drain and Feedback Loop. Inductances
High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop Inductances Y. Chung, S. Cai, W. Lee, Y. Lin, C. P. Wen, Fellow, IEEE, K. L. Wang, Fellow, IEEE, and T. Itoh, Fellow,
Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
Electronic CAD Practical work. Week 1: Introduction to transistor models. curve tracing of NMOS transfer characteristics
Electronic CAD Practical work Dr. Martin John Burbidge Lancashire UK Tel: +44 (0)1524 825064 Email: martin@mjb-rfelectronics-synthesis.com Martin Burbidge 2006 Week 1: Introduction to transistor models
Application Note 5057
A 1 MHz to MHz Low Noise Feedback Amplifier using ATF-4143 Application Note 7 Introduction In the last few years the leading technology in the area of low noise amplifier design has been gallium arsenide
ANALYSIS OF BROADBAND GAN SWITCH MODE CLASS-E POWER AMPLIFIER
Progress In Electromagnetics Research Letters, Vol. 38, 151 16, 213 ANALYSIS OF BROADBAND GAN SWITCH MODE CLASS-E POWER AMPLIFIER Ahmed Tanany, Ahmed Sayed *, and Georg Boeck Berlin Institute of Technology,
POSTECH Activities on CMOS based Linear Power Amplifiers
1 POSTECH Activities on CMOS based Linear Power Amplifiers Jan. 16. 2006 Bumman Kim, & Jongchan Kang MMIC Laboratory Department of EE, POSTECH Presentation Outline 2 Motivation Basic Design Approach CMOS
AlGaN Polarization Graded Field Effect Transistors for High Linearity Microwave Applications
AlGaN Polarization Graded Field Effect Transistors for High Linearity Microwave Applications Shahadat H. Sohel, Hao Xue, Towhidur Razzak, Sanyam Bajaj, Yuewei Zhang, Wu Lu, Siddharth Rajan Department of
Compact Modeling of Silicon Carbide Lateral FETs for High Temperature Analog and Digital Circuits
Compact Modeling of Silicon Carbide Lateral FETs for High Temperature Analog and Digital Circuits Avinash S. Kashyap Cheng-Po Chen Vinayak Tilak GE Global Research Center 12/7/2011 Overview Program Objectives:
The EKV MOSFET Model for Circuit Simulation
The EKV MOSFET Model for Circuit Simulation October, 1998 Matthias Bucher, Fabien Théodoloz, François Krummenacher Electronics Laboratories (LEG) Swiss Federal Institute of Technology, Lausanne (EPFL),
Local Optimization in UTMOST III 10/19/05
Local Optimization in UTMOST III 10/19/05 Outline Parameter Extraction Alternatives What is Local Optimization? MOSFET Local Optimization Example Conclusion - 2 - Outline Parameter Extraction Alternatives
MODELLING OF NANOSCALE TUNNELLING FIELD EFFECT TRANSISTORS RAJAT VISHNOI
MODELLING OF NANOSCALE TUNNELLING FIELD EFFECT TRANSISTORS RAJAT VISHNOI DEPERTMENT OF ELECTRICAL ENGINEERING INDIAN INSTITUTE OF TECHNOLOGY DELHI MAY, 2016 Indian Institute of Technology Delhi (IITD),
Modeling the Drain Current of a PHEMT using the Artificial Neural Networks and a Taylor Series Expansion
International Journal of Innovation and Applied Studies ISSN 2028-9324 Vol. 10 No. 1 Jan. 2015 pp. 132-137 2015 Innovative Space of Scientific Research Journals http://www.ijias.issr-journals.org/ Modeling
E3 237 Integrated Circuits for Wireless Communication
E3 237 Integrated Circuits for Wireless Communication Lecture 8: Noise in Components Gaurab Banerjee Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore banerjee@ece.iisc.ernet.in
Characterization and Modeling of LDMOS Power FETs for RF Power Amplifier Applications
Characterization and ing of LDMOS Power FETs for RF Power Amplifier Applications (Invited Paper) John Wood, Peter H. Aaen, and Jaime A. Plá Freescale Semiconductor Inc., RF Division 2100 E. Elliot Rd.,
CHARACTERISING MICROWAVE TRANSISTOR DYNAMICS WITH SMALL-SIGNAL MEASUREMENTS
CHARACTERISING MICROWAVE TRANSISTOR DYNAMICS WITH SMALL-SIGNAL MEASUREMENTS Anthony E. Parker (1) and James G. Rathmell (2) (1) Department of Electronics, Macquarie University, Sydney AUSTRALIA 219, mailto:
a leap ahead in analog
Analog modeling requirements for HV CMOS technology Ehrenfried Seebacher 2011-12-15 a leap ahead in analog Presentation Overview Design perspective on High Performance Analog HV CMOS Analog modeling requirements
DESCRIPTION. APPLICATIONS Microwave Radios Military Radios VSAT Telecom Infrastructure Test Equipment
KX105 15 W, 6.0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface-Mount Technology (SMT) package for high reliability
5-21GHz Driver Amplifier. GaAs Monolithic Microwave IC in SMD leadless package
Description GaAs Monolithic Microwave IC in SMD leadless package The CHA3664-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from
Push-Pull Class-E Power Amplifier with a Simple Load Network Using an Impedance Matched Transformer
Proceedings of the International Conference on Electrical, Electronics, Computer Engineering and their Applications, Kuala Lumpur, Malaysia, 214 Push-Pull Class-E Power Amplifier with a Simple Load Network
New LDMOS Model Delivers Powerful Transistor Library Part 1: The CMC Model
From October 2004 High Frequency Electronics Copyright 2004, Summit Technical Media, LLC New LDMOS Model Delivers Powerful Transistor Library Part 1: The CMC Model W. Curtice, W.R. Curtice Consulting;
EE241 - Spring 2013 Advanced Digital Integrated Circuits. Projects. Groups of 3 Proposals in two weeks (2/20) Topics: Lecture 5: Transistor Models
EE241 - Spring 2013 Advanced Digital Integrated Circuits Lecture 5: Transistor Models Projects Groups of 3 Proposals in two weeks (2/20) Topics: Soft errors in datapaths Soft errors in memory Integration
I. INTRODUCTION. either Tee or Pi circuit configurations can be used [1] [4]. Though the Tee circuit
![I. INTRODUCTION. either Tee or Pi circuit configurations can be used [1] [4]. Though the Tee circuit](/thumbs/87/96235024.jpg "I. INTRODUCTION. either Tee or Pi circuit configurations can be used [1] [4]. Though the Tee circuit")
I. INTRODUCTION FOR the small-signal modeling of hetero junction bipolar transistor (HBT), either Tee or Pi circuit configurations can be used [1] [4]. Though the Tee circuit reflects the device physics
Session 10: Solid State Physics MOSFET
Session 10: Solid State Physics MOSFET 1 Outline A B C D E F G H I J 2 MOSCap MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor: Al (metal) SiO2 (oxide) High k ~0.1 ~5 A SiO2 A n+ n+ p-type Si (bulk)
cost and reliability; power considerations were of secondary importance. In recent years. however, this has begun to change and increasingly power is
CHAPTER-1 INTRODUCTION AND SCOPE OF WORK 1.0 MOTIVATION In the past, the major concern of the VLSI designer was area, performance, cost and reliability; power considerations were of secondary importance.
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
Topic 2. Basic MOS theory & SPICE simulation
Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
THE positive feedback from inhomogeneous temperature
1428 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 33, NO. 9, SEPTEMBER 1998 Characterization of RF Power BJT and Improvement of Thermal Stability with Nonlinear Base Ballasting Jaejune Jang, Student Member,
Implementation of a sub micron multifinger RF CMOS model in ADS cadence environment using spectre simulator
Implementation of a sub micron multifinger RF CMOS model in ADS cadence environment using spectre simulator Stephane Beaussart AMI semiconductor Belgium BVBA 1 Outline Introduction Challenges and Issues
TGF Watt Discrete Power GaN on SiC HEMT. Key Features. Primary Applications Defense & Aerospace Broadband Wireless. Product Description
50 Watt Discrete Power GaN on SiC HEMT Key Features Frequency Range: DC - 18 GHz 47 dbm Nominal Psat 55% Maximum PAE 8.7 db Nominal Power Gain Bias: Vd = 28-35 V, Idq = 1 A, Vg = -3.6 V Typical Technology:
RF W GaN WIDEBAND PULSED POWER AMPLIFIER
280W GaN WIDE- BAND PULSED POWER AMPLI- FIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology
Gallium Nitride (GaN) Technology & Product Development
Gallium Nitride (GaN) Technology & Product Development IEEE IMS / MTT-S 2012 Montreal, Canada GaN A New Enabling Technology Five times faster, higher frequency, faster on-chip logic Five times more power,
17-26GHz Medium Power Amplifier. GaAs Monolithic Microwave IC
Description The CHA5050-99F is a four stage monolithic MPA that provides typically 25.5dBm of output power associated to 20% of power added efficiency at 3dB gain compression. It is designed for a wide
New Wide Band Gap High-Power Semiconductor Measurement Techniques Accelerate your emerging material device development
New Wide Band Gap High-Power Semiconductor Measurement Techniques Accelerate your emerging material device development Alan Wadsworth Americas Market Development Manager Semiconductor Test Division July
GaN MMIC PAs for MMW Applicaitons
GaN MMIC PAs for MMW Applicaitons Miroslav Micovic HRL Laboratories LLC, 311 Malibu Canyon Road, Malibu, CA 9265, U. S. A. mmicovic@hrl.com Motivation for High Frequency Power sources 6 GHz 11 GHz Frequency
EE351 Laboratory Exercise 4 Field Effect Transistors
Oct. 28, 2007, rev. July 26, 2009 Introduction The purpose of this laboratory exercise is for students to gain experience making measurements on Junction (JFET) to confirm mathematical models and to gain
CHA3565-QAG RoHS COMPLIANT
Sij & NF (db) RoHS COMPLIANT Description GaAs Monolithic Microwave IC in SMD leadless package The is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications,
A New Model for Thermal Channel Noise of Deep-Submicron MOSFETS and its Application in RF-CMOS Design
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 5, MAY 2001 831 A New Model for Thermal Channel Noise of Deep-Submicron MOSFETS and its Application in RF-CMOS Design Gerhard Knoblinger, Member, IEEE,
Development of Gallium Nitride High Electron Mobility Transistors for Cellular Base Stations
ELECTRONICS Development of Gallium Nitride High Electron Mobility Transistors for Cellular Base Stations Kazutaka INOUE*, Seigo SANO, Yasunori TATENO, Fumikazu YAMAKI, Kaname EBIHARA, Norihiko UI, Akihiro
S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 8 ma Operational Voltage
10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance Output Power: 16W at
Davinci. Semiconductor Device Simulaion in 3D SYSTEMS PRODUCTS LOGICAL PRODUCTS PHYSICAL IMPLEMENTATION SIMULATION AND ANALYSIS LIBRARIES TCAD
SYSTEMS PRODUCTS LOGICAL PRODUCTS PHYSICAL IMPLEMENTATION SIMULATION AND ANALYSIS LIBRARIES TCAD Aurora DFM WorkBench Davinci Medici Raphael Raphael-NES Silicon Early Access TSUPREM-4 Taurus-Device Taurus-Lithography
A 2.469~2.69GHz AlGaN/GaN HEMT Power Amplifier for IEEE e WiMAX Applications
A 2.469~2.69GHz AlGaN/GaN HEMT Power Amplifier for IEEE 82.16e WiMAX Applications Weijia LI 1, Yan WANG 2, Giovanni GHIONE 3, Fellow, IEEE Department of Electronics, Politecnico di Torino Torino 1129,
Design of Enhancement Mode Single-gate and Double-gate Multi-channel GaN HEMT with Vertical Polarity Inversion Heterostructure
MITSUBISHI ELECTRIC RESEARCH LABORATORIES http://www.merl.com Design of Enhancement Mode Single-gate and Double-gate Multi-channel GaN HEMT with Vertical Polarity Inversion Heterostructure Feng, P.; Teo,
17-24GHz Medium Power Amplifier. GaAs Monolithic Microwave IC
Description GaAs Monolithic Microwave IC The is a four stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit
GHz Packaged HPA. GaAs Monolithic Microwave IC in SMD leadless package. Output power (dbm)
Output power (dbm) G Description GaAs Monolithic Microwave IC in SMD leadless package The is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a
Development of Microwave and Terahertz Detectors Utilizing AlN/GaN High Electron Mobility Transistors
Development of Microwave and Terahertz Detectors Utilizing AlN/GaN High Electron Mobility Transistors L. Liu 1, 2,*, B. Sensale-Rodriguez 1, Z. Zhang 1, T. Zimmermann 1, Y. Cao 1, D. Jena 1, P. Fay 1,
15W Power Packaged Transistor. GaN HEMT on SiC
Gain (db), Pout (dbm) & PAE (%) Drain Current (A) CHK15A-QIA Description The CHK15A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
PART I - DOUBLE- PULSE GAN FET NONLINEAR CHARACTERIZATION AND MODELING
Nonlinear Characteriza/on and Modelling of Microwave Electron Devices for Large Signal and Low Noise Applica/ons PART I - DOUBLE- PULSE GAN FET NONLINEAR CHARACTERIZATION AND MODELING Prof. Alberto Santarelli
NAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and
Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body
DEVICE DISPERSION AND INTERMODULATION IN HEMTs
DEVICE DISPERSION AND INTERMODULATION IN HEMTs James Brinkhoff and Anthony E. Parker Department of Electronics, Macquarie University, Sydney AUSTRALIA 2109, mailto: jamesb@ics.mq.edu.au ABSTRACT It has
Direct calculation of metal oxide semiconductor field effect transistor high frequency noise parameters
Direct calculation of metal oxide semiconductor field effect transistor high frequency noise parameters C. H. Chen and M. J. Deen a) Engineering Science, Simon Fraser University, Burnaby, British Columbia
Stanford University. Virtual-Source Carbon Nanotube Field-Effect Transistors Model. Quick User Guide
Stanford University Virtual-Source Carbon Nanotube Field-Effect Transistors Model Version 1.0.1 Quick User Guide Copyright The Board Trustees of the Leland Stanford Junior University 2015 Chi-Shuen Lee
CHA5294 RoHS COMPLIANT
30-40GHz Medium Power Amplifier GaAs Monolithic Microwave IC CHA5294 RoHS COMPLIANT Description The CHA5294 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range
PFP15T140 / PFB15T140
FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel
37-40GHz MMIC Sub-Harmonically Pumped Image Rejection Diode Mixer
37-40GHz MMIC Sub-Harmonically Pumped Image Rejection Diode Mixer F. Rasà, F. Celestino, M. Remonti, B. Gabbrielli, P. Quentin ALCATEL ITALIA, TSD-HCMW R&D, Str. Provinciale per Monza, 33, 20049 Concorezzo
7-11GHz Low Noise Amplifier. GaAs Monolithic Microwave IC
CHA1010-99F GaAs Monolithic Microwave IC Description The CHA1010-99F is a monolithic two-stage wide-band low noise amplifier. It is designed for a wide range of applications, from professional to commercial
Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 39 ma Operational Voltage
60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = db at 2GHz
Class E and Class D -1 GaN HEMT Switched-Mode Power Amplifiers
Class E and Class D -1 GaN HEMT Switched-Mode Power Amplifiers J. A. GARCÍA *, R. MERLÍN *, M. FERNÁNDEZ *, B. BEDIA *, L. CABRIA *, R. MARANTE *, T. M. MARTÍN-GUERRERO ** *Departamento Ingeniería de Comunicaciones
1590 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 62, NO. 8, AUGUST Symmetrical Large-Signal Modeling of Microwave Switch FETs
1590 IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 62, NO. 8, AUGUST 2014 Symmetrical Large-Signal Modeling of Microwave Switch FETs Ankur Prasad, Student Member, IEEE, Christian Fager, Member,
2-22GHz LNA with AGC. GaAs Monolithic Microwave IC. Performance (db)
Performance (db) GaAs Monolithic Microwave IC Description The is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22GHz. It is designed for a wide range
Small Signal Modelling of InGaAs/InAlAs phemt for low noise applications
Small Signal Modelling of InGaAs/InAlAs phemt for low noise applications N. Ahmad and M. Mohamad Isa School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 26 Arau, Perlis,
Partial printouts for our website visitors. Send your comments and requests to 3j.com S L
Power Train Scaling for High Frequency Switching, Impact on Power Controller Design By Dr. Sami Ajram SL3J S, S.A.R.L. Pôle d Activité Y. Morandat 1480 Avenue d ARMENIE, 13120 Gardanne, France Email:
CHA7215 RoHS COMPLIANT
X-band High Power Amplifier GaAs Monolithic Microwave IC CHA7215 RoHS COMPLIANT Description The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides
N & P-Channel 100-V (D-S) MOSFET
N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives
MECXQMM-60W. 8.3 to 10.3 GHz GaN HEMT Power Amplifier
Pout (dbm), PAE(%) Functional Block Diagram Main Features 0.25µm GaN HEMT Technology 8.3 10.3 GHz full performances Frequency Range 60W Output Power @ Pin 40.5 dbm PAE > 33% @ Pin 40.5 dbm Linear Gain
Advanced Information: AI GHz Medium Power Amplifier. GaAs Monolithic Microwave IC
: AI1805 GaAs Monolithic Microwave IC UMS develops a packaged monolithic medium power amplifier delivering 23.5dBm output power at 1dB compression point, associated with 24dB of linear gain from 17 to
In modern wireless. A High-Efficiency Transmission-Line GaN HEMT Class E Power Amplifier CLASS E AMPLIFIER. design of a Class E wireless
CASS E AMPIFIER From December 009 High Frequency Electronics Copyright 009 Summit Technical Media, C A High-Efficiency Transmission-ine GaN HEMT Class E Power Amplifier By Andrei Grebennikov Bell abs Ireland
CHA2069-QDG RoHS COMPLIANT
CHA69-QDG RoHS COMPLIANT 18-3GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA69-QDG is a three-stage self-biased wide band monolithic low noise amplifier.
An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges
Chinese Journal of Electronics Vol.23, No.4, Oct. 2014 An Improved Gate Charge Model of HEMTs by Direct Formulating the Branch Charges LIU Linsheng (Ericsson (China) Communications Co., Ltd., Chengdu 610041,
Status of the EKV3.0 MOS Transistor Model
Status of the EKV3.0 Transistor Model Matthias Bucher, Technical University of Crete e-mail: bucher@electronics.tuc.gr Antonios Bazigos, National Technical University of Athens François Krummenacher, École
The Schottky Diode Mixer. Application Note 995
The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode.
NEC's C TO X BAND N-CHANNEL GaAs MES FET PACKAGE OUTLINE
FEATURES HIGH POWER GAIN: GS = 6 db TYP at f = 1 GHz OUTPUT POWER (at 1 db compression): 15 db TYP at f = 1 GHz LOW NOISE/HIGH GAIN: NF =.9 db TYP, Ga = 1 db TYP at f = 4 GHz GATE LENGTH: LG =.8 µm (recessed
Advanced Information: AI1712. L-Band Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD Ceramic Hermetic package
: GaAs Monolithic Microwave IC in SMD Ceramic Hermetic package UMS develops an L-Band LNA monolithic circuit including an active bias network. In addition, a protection network is included in order to
80-105GHz Balanced Low Noise Amplifier. GaAs Monolithic Microwave IC. Gain & NF (db)
Gain & NF (db) GaAs Monolithic Microwave IC Description The is a broadband, balanced, four-stage monolithic low noise amplifier. It is designed for Millimeter-Wave Imaging applications and can be use in