Simulation of Optoelectronic Devices. Günther Zandler
|
|
|
- Aubrie Dorsey
- 5 years ago
- Views:
Transcription
1 Simulation of Optoelectronic Devices Günther Zandler 10/21/2005
2 Outline Silvaco ATLAS General Optoelectronic Capabilities InGaN/GaN Material System Optical Coupling Micro-Ring Device -2-
3 Silvaco Background Founded in 1984 by Dr. Ivan Pesic Market Leader in SPICE Simulation, TCAD, and IC CAD Large Customer Base of Foundry, IDM, ASIC, and Fabless Semiconductor Companies Headquarters in Silicon Valley with 11 Offices Worldwide Privately Held, Profitable Since Inception, Debt-free Grown from Retained Earnings, No VC Funding Currently Employs Over 220 Professionals 80% with Advanced Engineering Degrees (MS, PhD) Worldwide Technical Support and Training Active Programs with Leading Foundries, EDA Vendors, Universities, Industry Standards, and Government Agencies -3-
4 Connecting TCAD to Tapeout Design Flow -4-
5 ATLAS Physical Models Drift Diffusion (Hetrojunctions) Heat flow Imbedded Circuit Energy Balance/Hydrodynamic Traps/Amorphous Photodetection (Ray Trace, BPM, Waveguide) Quantum Effects (MOS, S-P, QM, BQP) Light Emitters (LED, Laser, VCSEL) C-Interpreter -5-
6 ATLAS Product Hierarchy o -6-
7 ATLAS Context -7-
8 Optical Models -8-
9 ATLAS Luminous -9-
10 ATLAS Quantum Selected Results -10-
11 ATLAS LED -11-
12 ATLAS Laser Selected Results -12-
13 ATLAS VCSEL -13-
14 VCSEL structures Cold cavity analysis Easy overlay of optical and electrical quantities -14-
15 Polarization Effects on Band Edges in InGaN Microring LED -15-
16 Lorentzian Broadening -16-
17 Three Well LED with Random Composition Variation -17-
18 LED Spectrum Effects of Random Composition -18-
19 LED Output Coupling Efficiency Without Reflector -19-
20 LED Output Coupling Efficiency: With Mirror -20-
21 LED Output Coupling Efficiency: With Mirror and Interference -21-
22 LED Output Coupling Efficiency: Mirror, Interference and Integrated -22-
23 LED Output Coupling Efficiency: Mirror, Interference, Integrated and Multispectral -23-
24 Organic Materials Poole Frenkel Mobility Models Langevin Recombination Models Defect Distributions (otft) Dynamic Equations for Excitions (Singlet & Triplet) Various Recombination Rates can enter in Reverse Ray Tracing -24-
25 Micro-ring Device Structure Reference: Choi, H.W. et.al., "High extraction efficiency InGaN micro-ring light-emitting diodes", Appl. Phys. Lett., Vol. 83, No. 22, pp
26 Micro-Ring LED structure in ATLAS -26-
27 Effects of Choice of Well Composition on Simulated Emission Wavelength -27-
28 Effects of Choice of Bowing Factor on Simulated Emission Wavelength Reference: Piprek, J. "Semiconductor Optoelectronic Devices Introduction to Physics and Simulation", Academic Press, UCSB, 2003, pp. 142 and
29 Effect of Well Thickness on Blue Shift -29-
30 Broad Area / Micro-ring LED Broad Area LED Micro-ring LED Shortcomings of the proposed micro-ring design are shown Improvements of coupling efficiency and insignificant changes of radiation profile are confirmed -30-
31 Conclusion Simulation of various types of devices in absorptions and emission Wide range of physicals models for coupled electrical and optical simulation Support for novel materials and materials systems -31-
Review of Semiconductor Physics
Review of Semiconductor Physics k B 1.38 u 10 23 JK -1 a) Energy level diagrams showing the excitation of an electron from the valence band to the conduction band. The resultant free electron can freely
Copyright 2006 Crosslight Software Inc. Analysis of Resonant-Cavity Light-Emitting Diodes
Copyright 2006 Crosslight Software Inc. www.crosslight.com 1 Analysis of Resonant-Cavity Light-Emitting Diodes Contents About RCLED. Crosslight s model. Example of an InGaAs/AlGaAs RCLED with experimental
Functional Materials. Optoelectronic devices
Functional Materials Lecture 2: Optoelectronic materials and devices (inorganic). Photonic materials Optoelectronic devices Light-emitting diode (LED) displays Photodiode and Solar cell Photoconductive
Luminous Equivalent of Radiation
Intensity vs λ Luminous Equivalent of Radiation When the spectral power (p(λ) for GaP-ZnO diode has a peak at 0.69µm) is combined with the eye-sensitivity curve a peak response at 0.65µm is obtained with
Lecture 18: Photodetectors
Lecture 18: Photodetectors Contents 1 Introduction 1 2 Photodetector principle 2 3 Photoconductor 4 4 Photodiodes 6 4.1 Heterojunction photodiode.................... 8 4.2 Metal-semiconductor photodiode................
VERTICAL CAVITY SURFACE EMITTING LASER
VERTICAL CAVITY SURFACE EMITTING LASER Nandhavel International University Bremen 1/14 Outline Laser action, optical cavity (Fabry Perot, DBR and DBF) What is VCSEL? How does VCSEL work? How is it different
Elements of Optical Networking
Bruckner Elements of Optical Networking Basics and practice of optical data communication With 217 Figures, 13 Tables and 93 Exercises Translated by Patricia Joliet VIEWEG+ TEUBNER VII Content Preface
ECE 340 Lecture 29 : LEDs and Lasers Class Outline:
ECE 340 Lecture 29 : LEDs and Lasers Class Outline: Light Emitting Diodes Lasers Semiconductor Lasers Things you should know when you leave Key Questions What is an LED and how does it work? How does a
Key Questions. What is an LED and how does it work? How does a laser work? How does a semiconductor laser work? ECE 340 Lecture 29 : LEDs and Lasers
Things you should know when you leave Key Questions ECE 340 Lecture 29 : LEDs and Class Outline: What is an LED and how does it How does a laser How does a semiconductor laser How do light emitting diodes
Mode analysis of Oxide-Confined VCSELs using near-far field approaches
Annual report 998, Dept. of Optoelectronics, University of Ulm Mode analysis of Oxide-Confined VCSELs using near-far field approaches Safwat William Zaki Mahmoud We analyze the transverse mode structure
Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in
Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in semiconductor material Pumped now with high current density
Spatial Investigation of Transverse Mode Turn-On Dynamics in VCSELs
Spatial Investigation of Transverse Mode Turn-On Dynamics in VCSELs Safwat W.Z. Mahmoud Data transmission experiments with single-mode as well as multimode 85 nm VCSELs are carried out from a near-field
Integrated High Speed VCSELs for Bi-Directional Optical Interconnects
Integrated High Speed VCSELs for Bi-Directional Optical Interconnects Volodymyr Lysak, Ki Soo Chang, Y ong Tak Lee (GIST, 1, Oryong-dong, Buk-gu, Gwangju 500-712, Korea, T el: +82-62-970-3129, Fax: +82-62-970-3128,
UOTFT: Universal Organic TFT Model for Circuit Design
UOTFT: Universal Organic TFT Model for Circuit Design S. Mijalković, D. Green, A. Nejim Silvaco Europe, St Ives, Cambridgeshire, UK A. Rankov, E. Smith, T. Kugler, C. Newsome, J. Halls Cambridge Display
Light Sources, Modulation, Transmitters and Receivers
Optical Fibres and Telecommunications Light Sources, Modulation, Transmitters and Receivers Introduction Previous section looked at Fibres. How is light generated in the first place? How is light modulated?
Modeling Photonic Crystal Light Emitting Diode (PhCLED) Using APSYS. Copyright 2007 Crosslight Software Inc.
Modeling Photonic Crystal Light Emitting Diode (PhCLED) Using APSYS Copyright 2007 Crosslight Software Inc. www.crosslight.com 1 2 Model Contents A PhCLED with DBR An InGaN PhCLED with guided multimodes
LEDs, Photodetectors and Solar Cells
LEDs, Photodetectors and Solar Cells Chapter 7 (Parker) ELEC 424 John Peeples Why the Interest in Photons? Answer: Momentum and Radiation High electrical current density destroys minute polysilicon and
Design and Analysis of Resonant Leaky-mode Broadband Reflectors
846 PIERS Proceedings, Cambridge, USA, July 6, 8 Design and Analysis of Resonant Leaky-mode Broadband Reflectors M. Shokooh-Saremi and R. Magnusson Department of Electrical and Computer Engineering, University
Active Device Utilities and Multi-Level Simulation An Overview
Active Device Utilities and Multi-Level Simulation An Overview If you have technical questions, please contact evanh@synopsys.com 2016 Synopsys, Inc. 1 Outline Introduction Multi-Physics Utility Carrier
Optical Fibers p. 1 Basic Concepts p. 1 Step-Index Fibers p. 2 Graded-Index Fibers p. 4 Design and Fabrication p. 6 Silica Fibers p.
Preface p. xiii Optical Fibers p. 1 Basic Concepts p. 1 Step-Index Fibers p. 2 Graded-Index Fibers p. 4 Design and Fabrication p. 6 Silica Fibers p. 6 Plastic Optical Fibers p. 9 Microstructure Optical
Optical Receiver Operation With High Internal Gain of GaP and GaAsP/GaP Light-emitting diodes
Optical Receiver Operation With High Internal Gain of GaP and GaAsP/GaP Light-emitting diodes Heinz-Christoph Neitzert *, Manuela Ferrara, Biagio DeVivo DIIIE, Università di Salerno, Via Ponte Don Melillo
Introduction to Optoelectronic Devices
Introduction to Optoelectronic Devices Dr. Jing Bai Assistant Professor Department of Electrical and Computer Engineering University of Minnesota Duluth October 30th, 2012 1 Outline What is the optoelectronics?
Introduction Fundamentals of laser Types of lasers Semiconductor lasers
ECE 5368 Introduction Fundamentals of laser Types of lasers Semiconductor lasers Introduction Fundamentals of laser Types of lasers Semiconductor lasers How many types of lasers? Many many depending on
Optical MEMS in Compound Semiconductors Advanced Engineering Materials, Cal Poly, SLO November 16, 2007
Optical MEMS in Compound Semiconductors Advanced Engineering Materials, Cal Poly, SLO November 16, 2007 Outline Brief Motivation Optical Processes in Semiconductors Reflectors and Optical Cavities Diode
Physics of Waveguide Photodetectors with Integrated Amplification
Physics of Waveguide Photodetectors with Integrated Amplification J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers Electrical and Computer Engineering Department University of California, Santa
Semiconductor Optical Communication Components and Devices Lecture 39: Optical Modulators
Semiconductor Optical Communication Components and Devices Lecture 39: Optical Modulators Prof. Utpal Das Professor, Department of Electrical Engineering, Laser Technology Program, Indian Institute of
Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in
Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in semiconductor material Pumped now with high current density
Advanced semiconductor lasers
Advanced semiconductor lasers Quantum cascade lasers Single mode lasers DFBs, VCSELs, etc. Quantum cascade laser Reminder: Semiconductor laser diodes Conventional semiconductor laser CB diode laser: material
By emitter degradation analysis of high power diode laser bars. Outline Part I
By emitter degradation analysis of high power diode laser bars Eric Larkins and Jens W. Tomm Outline Part I I. 1. Introduction I. 2. Experimental Techniques I. 3. Case Study 1: Strain Threshold for Increased
64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array
64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array 69 64 Channel Flip-Chip Mounted Selectively Oxidized GaAs VCSEL Array Roland Jäger and Christian Jung We have designed and fabricated
1 Semiconductor-Photon Interaction
1 SEMICONDUCTOR-PHOTON INTERACTION 1 1 Semiconductor-Photon Interaction Absorption: photo-detectors, solar cells, radiation sensors. Radiative transitions: light emitting diodes, displays. Stimulated emission:
UNIT-III SOURCES AND DETECTORS. According to the shape of the band gap as a function of the momentum, semiconductors are classified as
UNIT-III SOURCES AND DETECTORS DIRECT AND INDIRECT BAND GAP SEMICONDUCTORS: According to the shape of the band gap as a function of the momentum, semiconductors are classified as 1. Direct band gap semiconductors
Basic concepts. Optical Sources (b) Optical Sources (a) Requirements for light sources (b) Requirements for light sources (a)
Optical Sources (a) Optical Sources (b) The main light sources used with fibre optic systems are: Light-emitting diodes (LEDs) Semiconductor lasers (diode lasers) Fibre laser and other compact solid-state
InP-based Waveguide Photodetector with Integrated Photon Multiplication
InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,
Fabrication of antenna integrated UTC-PDs as THz sources
Invited paper Fabrication of antenna integrated UTC-PDs as THz sources Siwei Sun 1, Tengyun Wang, Xiao xie 1, Lichen Zhang 1, Yuan Yao and Song Liang 1* 1 Key Laboratory of Semiconductor Materials Science,
Laser Diode. Photonic Network By Dr. M H Zaidi
Laser Diode Light emitters are a key element in any fiber optic system. This component converts the electrical signal into a corresponding light signal that can be injected into the fiber. The light emitter
Index. Cambridge University Press Silicon Photonics Design Lukas Chrostowski and Michael Hochberg. Index.
absorption, 69 active tuning, 234 alignment, 394 396 apodization, 164 applications, 7 automated optical probe station, 389 397 avalanche detector, 268 back reflection, 164 band structures, 30 bandwidth
Simulation of silicon based thin-film solar cells. Copyright Crosslight Software Inc.
Simulation of silicon based thin-film solar cells Copyright 1995-2008 Crosslight Software Inc. www.crosslight.com 1 Contents 2 Introduction Physical models & quantum tunneling Material properties Modeling
Semiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I
Semiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I Prof. Utpal Das Professor, Department of lectrical ngineering, Laser Technology Program, Indian Institute
Vertical External Cavity Surface Emitting Laser
Chapter 4 Optical-pumped Vertical External Cavity Surface Emitting Laser The booming laser techniques named VECSEL combine the flexibility of semiconductor band structure and advantages of solid-state
Silicon-based photonic crystal nanocavity light emitters
Silicon-based photonic crystal nanocavity light emitters Maria Makarova, Jelena Vuckovic, Hiroyuki Sanda, Yoshio Nishi Department of Electrical Engineering, Stanford University, Stanford, CA 94305-4088
Optimization of GaAs Amplification Photodetectors for 700% Quantum Efficiency
776 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 9, NO. 3, MAY/JUNE 2003 Optimization of GaAs Amplification Photodetectors for 700% Quantum Efficiency Joachim Piprek, Senior Member, IEEE,
Examination Optoelectronic Communication Technology. April 11, Name: Student ID number: OCT1 1: OCT 2: OCT 3: OCT 4: Total: Grade:
Examination Optoelectronic Communication Technology April, 26 Name: Student ID number: OCT : OCT 2: OCT 3: OCT 4: Total: Grade: Declaration of Consent I hereby agree to have my exam results published on
Lecture 6 Fiber Optical Communication Lecture 6, Slide 1
Lecture 6 Optical transmitters Photon processes in light matter interaction Lasers Lasing conditions The rate equations CW operation Modulation response Noise Light emitting diodes (LED) Power Modulation
Nanophotonics: Single-nanowire electrically driven lasers
Nanophotonics: Single-nanowire electrically driven lasers Ivan Stepanov June 19, 2010 Single crystaline nanowires have unique optic and electronic properties and their potential use in novel photonic and
All-Optical Clock Division Using Period-one Oscillation of Optically Injected Semiconductor Laser
International Conference on Logistics Engineering, Management and Computer Science (LEMCS 2014) All-Optical Clock Division Using Period-one Oscillation of Optically Injected Semiconductor Laser Shengxiao
Doppler-Free Spetroscopy of Rubidium
Doppler-Free Spetroscopy of Rubidium Pranjal Vachaspati, Sabrina Pasterski MIT Department of Physics (Dated: April 17, 2013) We present a technique for spectroscopy of rubidium that eliminates doppler
LONG-wavelength vertical-cavity surface-emitting lasers
494 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 5, MAY 2006 Optical Design of InAlGaAs Low-Loss Tunnel-Junction Apertures for Long-Wavelength Vertical-Cavity Lasers D. Feezell, D. A. Buell, D. Lofgreen,
Chapter 3 OPTICAL SOURCES AND DETECTORS
Chapter 3 OPTICAL SOURCES AND DETECTORS 3. Optical sources and Detectors 3.1 Introduction: The success of light wave communications and optical fiber sensors is due to the result of two technological breakthroughs.
Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs
Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sadia Monika Siddharth Rajan ECE, The Ohio State University Andrew Allerman, Michael
Figure 1. Schematic diagram of a Fabry-Perot laser.
Figure 1. Schematic diagram of a Fabry-Perot laser. Figure 1. Shows the structure of a typical edge-emitting laser. The dimensions of the active region are 200 m m in length, 2-10 m m lateral width and
Bistability in Bipolar Cascade VCSELs
Bistability in Bipolar Cascade VCSELs Thomas Knödl Measurement results on the formation of bistability loops in the light versus current and current versus voltage characteristics of two-stage bipolar
Self-organizing laser diode cavities with photorefractive nonlinear crystals
Institut d'optique http://www.iota.u-psud.fr/~roosen/ Self-organizing laser diode cavities with photorefractive nonlinear crystals Nicolas Dubreuil, Gilles Pauliat, Gérald Roosen Nicolas Huot, Laurent
MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science
Student Name Date MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science 6.161 Modern Optics Project Laboratory Laboratory Exercise No. 6 Fall 2010 Solid-State
Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasers (VCSEL)
Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasers (VCSEL) J.-M. Lamy, S. Boyer-Richard, C. Levallois, C. Paranthoën, H. Folliot, N. Chevalier, A. Le Corre, S. Loualiche UMR FOTON 6082
Problem 4 Consider a GaAs p-n + junction LED with the following parameters at 300 K: Electron diusion coecient, D n = 25 cm 2 =s Hole diusion coecient
Prof. Jasprit Singh Fall 2001 EECS 320 Homework 7 This homework is due on November 8. Problem 1 An optical power density of 1W/cm 2 is incident on a GaAs sample. The photon energy is 2.0 ev and there is
10/14/2009. Semiconductor basics pn junction Solar cell operation Design of silicon solar cell
PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi
Technical Notes. Introduction. Optical Properties. Issue 6 July Figure 1. Specular Reflection:
Technical Notes This Technical Note introduces basic concepts in optical design for low power off-grid lighting products and suggests ways to improve optical efficiency. It is intended for manufacturers,
Organic Light-Emitting Diode with Patterned Inverted Conical Structure for Efficiency Enhancement
Organic Light-Emitting Diode with Patterned Inverted Conical Structure for Efficiency Enhancement Sonam Thakur 1,Vipin Gupta 2 (Department of Electronics And Communication, Suresh Gyan Vihar University,
Tunable Resonant-Cavity-Enhanced Photodetector with Double High- Index-Contrast Grating Mirrors
Tunable Resonant-Cavity-Enhanced Photodetector with Double High- Index-Contrast Grating Mirrors Supannee Learkthanakhachon, Kresten Yvind, and Il-Sug Chung* Department of Photonics Engineering, Technical
Optodevice Data Book ODE I. Rev.9 Mar Opnext Japan, Inc.
Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Section 1 Operating Principles 1.1 Operating Principles of Laser Diodes (LDs) and Infrared Emitting Diodes (IREDs) 1.1.1 Emitting Principles
Course Outcome of M.Tech (VLSI Design)
Course Outcome of M.Tech (VLSI Design) PVL108: Device Physics and Technology The students are able to: 1. Understand the basic physics of semiconductor devices and the basics theory of PN junction. 2.
Lecture 4 INTEGRATED PHOTONICS
Lecture 4 INTEGRATED PHOTONICS What is photonics? Photonic applications use the photon in the same way that electronic applications use the electron. Devices that run on light have a number of advantages
Lecture 1: Course Overview. Rajeev J. Ram
Lecture 1: Course Overview Rajeev J. Ram Office: 36-491 Telephone: X3-4182 Email: rajeev@mit.edu Syllabus Basic concepts Advanced concepts Background: p-n junctions Photodetectors Modulators Optical amplifiers
EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS
EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS 1. List the PN diode parameters. 1. Bulk Resistance. 2. Static Resistance/Junction Resistance (or) DC Forward Resistance 3. Dynamic
Optoelectronics ELEC-E3210
Optoelectronics ELEC-E3210 Lecture 4 Spring 2016 Outline 1 Lateral confinement: index and gain guiding 2 Surface emitting lasers 3 DFB, DBR, and C3 lasers 4 Quantum well lasers 5 Mode locking P. Bhattacharya:
Deliverable Report. Deliverable No: D2.9 Deliverable Title: OAM waveguide transmission
Deliverable Report Deliverable No: D2.9 Deliverable Title: OAM waveguide transmission Grant Agreement number: 255914 Project acronym: PHORBITECH Project title: A Toolbox for Photon Orbital Angular Momentum
VCSELs With Enhanced Single-Mode Power and Stabilized Polarization for Oxygen Sensing
VCSELs With Enhanced Single-Mode Power and Stabilized Polarization for Oxygen Sensing Fernando Rinaldi and Johannes Michael Ostermann Vertical-cavity surface-emitting lasers (VCSELs) with single-mode,
Surface-Emitting Single-Mode Quantum Cascade Lasers
Surface-Emitting Single-Mode Quantum Cascade Lasers M. Austerer, C. Pflügl, W. Schrenk, S. Golka, G. Strasser Zentrum für Mikro- und Nanostrukturen, Technische Universität Wien, Floragasse 7, A-1040 Wien
Vertical-cavity surface-emitting lasers (VCSELs)
78 Technology focus: Lasers Advancing InGaN VCSELs Mike Cooke reports on progress towards filling the green gap and improving tunnel junctions as alternatives to indium tin oxide current-spreading layers.
COMPONENTS OF OPTICAL INSTRUMENTS. Chapter 7 UV, Visible and IR Instruments
COMPONENTS OF OPTICAL INSTRUMENTS Chapter 7 UV, Visible and IR Instruments 1 Topics A. GENERAL DESIGNS B. SOURCES C. WAVELENGTH SELECTORS D. SAMPLE CONTAINERS E. RADIATION TRANSDUCERS F. SIGNAL PROCESSORS
COMPONENTS OF OPTICAL INSTRUMENTS. Topics
COMPONENTS OF OPTICAL INSTRUMENTS Chapter 7 UV, Visible and IR Instruments Topics A. GENERAL DESIGNS B. SOURCES C. WAVELENGTH SELECTORS D. SAMPLE CONTAINERS E. RADIATION TRANSDUCERS F. SIGNAL PROCESSORS
Three-guide Coupled Rectangular Ring Lasers with Total Internal Reflection Mirrors
Three-guide Coupled Rectangular Ring Lasers with Total Internal Reflection Mirrors Doo Gun Kim *1, Woon Kyung Choi 1, In-Il Jung 1, Geum-Yoon Oh 1, Young Wan Choi 1, Jong Chang Yi 2, and Nadir Dagli 3
WAVELENGTH DEPENDENCE OF TRANSVERSE MODE COUPLING WITH/WITHOUT E-BLOCK OF GAN LASER CAVITY. KrishneelLal. Senior Project
WAVELENGTH DEPENDENCE OF TRANSVERSE MODE COUPLING WITH/WITHOUT E-BLOCK OF GAN LASER CAVITY By KrishneelLal Senior Project ELECTRICAL ENGINEERING DEPARTMENT California Polytechnic State University San Luis
CONTENTS. Chapter 1 Wave Nature of Light 19
CONTENTS Chapter 1 Wave Nature of Light 19 1.1 Light Waves in a Homogeneous Medium 19 A. Plane Electromagnetic Wave 19 B. Maxwell's Wave Equation and Diverging Waves 22 Example 1.1.1 A diverging laser
New Ideology of All-Optical Microwave Systems Based on the Use of Semiconductor Laser as a Down-Converter.
New Ideology of All-Optical Microwave Systems Based on the Use of Semiconductor Laser as a Down-Converter. V. B. GORFINKEL, *) M.I. GOUZMAN **), S. LURYI *) and E.L. PORTNOI ***) *) State University of
R. J. Jones Optical Sciences OPTI 511L Fall 2017
R. J. Jones Optical Sciences OPTI 511L Fall 2017 Semiconductor Lasers (2 weeks) Semiconductor (diode) lasers are by far the most widely used lasers today. Their small size and properties of the light output
Principles of Optics for Engineers
Principles of Optics for Engineers Uniting historically different approaches by presenting optical analyses as solutions of Maxwell s equations, this unique book enables students and practicing engineers
SUPPLEMENTARY INFORMATION
Transfer printing stacked nanomembrane lasers on silicon Hongjun Yang 1,3, Deyin Zhao 1, Santhad Chuwongin 1, Jung-Hun Seo 2, Weiquan Yang 1, Yichen Shuai 1, Jesper Berggren 4, Mattias Hammar 4, Zhenqiang
nd IEEE International Semiconductor Laser Conference (ISLC 2010) Kyoto, Japan September IEEE Catalog Number: ISBN:
2010 22nd IEEE International Semiconductor Laser Conference (ISLC 2010) Kyoto, Japan 26 30 September 2010 IEEE Catalog Number: ISBN: CFP10SLC-PRT 978-1-4244-5683-3 Monday, 27 September 2010 MA MA1 Plenary
Nd:YSO resonator array Transmission spectrum (a. u.) Supplementary Figure 1. An array of nano-beam resonators fabricated in Nd:YSO.
a Nd:YSO resonator array µm Transmission spectrum (a. u.) b 4 F3/2-4I9/2 25 2 5 5 875 88 λ(nm) 885 Supplementary Figure. An array of nano-beam resonators fabricated in Nd:YSO. (a) Scanning electron microscope
Instruction manual and data sheet ipca h
1/15 instruction manual ipca-21-05-1000-800-h Instruction manual and data sheet ipca-21-05-1000-800-h Broad area interdigital photoconductive THz antenna with microlens array and hyperhemispherical silicon
LASER DIODE MODULATION AND NOISE
> 5' O ft I o Vi LASER DIODE MODULATION AND NOISE K. Petermann lnstitutfiir Hochfrequenztechnik, Technische Universitdt Berlin Kluwer Academic Publishers i Dordrecht / Boston / London KTK Scientific Publishers
InP-based Waveguide Photodetector with Integrated Photon Multiplication
InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,
A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product
A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product Myung-Jae Lee and Woo-Young Choi* Department of Electrical and Electronic Engineering,
LASER Transmitters 1 OBJECTIVE 2 PRE-LAB
LASER Transmitters 1 OBJECTIVE Investigate the L-I curves and spectrum of a FP Laser and observe the effects of different cavity characteristics. Learn to perform parameter sweeps in OptiSystem. 2 PRE-LAB
DBR based passively mode-locked 1.5m semiconductor laser with 9 nm tuning range Moskalenko, V.; Williams, K.A.; Bente, E.A.J.M.
DBR based passively mode-locked 1.5m semiconductor laser with 9 nm tuning range Moskalenko, V.; Williams, K.A.; Bente, E.A.J.M. Published in: Proceedings of the 20th Annual Symposium of the IEEE Photonics
Fiber-Optic Communication Systems
Fiber-Optic Communication Systems Second Edition GOVIND P. AGRAWAL The Institute of Optics University of Rochester Rochester, NY A WILEY-iNTERSCIENCE PUBLICATION JOHN WILEY & SONS, INC. NEW YORK / CHICHESTER
CONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34
CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials
Today s Outline - January 25, C. Segre (IIT) PHYS Spring 2018 January 25, / 26
Today s Outline - January 25, 2018 C. Segre (IIT) PHYS 570 - Spring 2018 January 25, 2018 1 / 26 Today s Outline - January 25, 2018 HW #2 C. Segre (IIT) PHYS 570 - Spring 2018 January 25, 2018 1 / 26 Today
Absorption: in an OF, the loss of Optical power, resulting from conversion of that power into heat.
Absorption: in an OF, the loss of Optical power, resulting from conversion of that power into heat. Scattering: The changes in direction of light confined within an OF, occurring due to imperfection in
Nanowires for Quantum Optics
Nanowires for Quantum Optics N. Akopian 1, E. Bakkers 1, J.C. Harmand 2, R. Heeres 1, M. v Kouwen 1, G. Patriarche 2, M. E. Reimer 1, M. v Weert 1, L. Kouwenhoven 1, V. Zwiller 1 1 Quantum Transport, Kavli
RECENTLY, studies have begun that are designed to meet
838 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 43, NO. 9, SEPTEMBER 2007 Design of a Fiber Bragg Grating External Cavity Diode Laser to Realize Mode-Hop Isolation Toshiya Sato Abstract Recently, a unique
OPTICAL MODE STUDY OF GALIUM NITRIDE BASED LASER DIODES. A Senior Project presented to. the Faculty of the ELECTICAL ENGINEERING DEPARTMENT
OPTICAL MODE STUDY OF GALIUM NITRIDE BASED LASER DIODES A Senior Project presented to the Faculty of the ELECTICAL ENGINEERING DEPARTMENT California Polytechnic State University, San Luis Obispo In Partial
Safa O. Kasap Electrical Engineering Department, University of Saskatchewan, Saskatoon, S7N 5A9, Canada
1 Optoelectronics Safa O. Kasap Electrical Engineering Department, University of Saskatchewan, Saskatoon, S7N 5A9, Canada e-mail: kasap@engr.usask.ca Abstract It is useful to view today s optoelectronics
Low threshold continuous wave Raman silicon laser
NATURE PHOTONICS, VOL. 1, APRIL, 2007 Low threshold continuous wave Raman silicon laser HAISHENG RONG 1 *, SHENGBO XU 1, YING-HAO KUO 1, VANESSA SIH 1, ODED COHEN 2, OMRI RADAY 2 AND MARIO PANICCIA 1 1:
Lecture 9 External Modulators and Detectors
Optical Fibres and Telecommunications Lecture 9 External Modulators and Detectors Introduction Where are we? A look at some real laser diodes. External modulators Mach-Zender Electro-absorption modulators
Light source approach for silicon photonics transceivers September Fiber to the Chip
Light source approach for silicon photonics transceivers September 2014 Fiber to the Chip Silicon Photonics Silicon Photonics Technology: Silicon material system & processing techniques to manufacture
Optical Amplifiers Photonics and Integrated Optics (ELEC-E3240) Zhipei Sun Photonics Group Department of Micro- and Nanosciences Aalto University
Photonics Group Department of Micro- and Nanosciences Aalto University Optical Amplifiers Photonics and Integrated Optics (ELEC-E3240) Zhipei Sun Last Lecture Topics Course introduction Ray optics & optical
Electro-Optic Modulators Workshop
Electro-Optic Modulators Workshop NUSOD 2013 Outline New feature highlights Electro-optic modulators Circuit level view Modulator categories Component simulation and parameter extraction Electro-optic