Lesson 5. Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors-

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1 Lesson 5 Electronics: Semiconductors Doping p-n Junction Diode Half Wave and Full Wave Rectification Introduction to Transistors- Types and Connections

2 Semiconductors Semiconductors If there are many free electrons to carry current, the semiconductor acts more like a conductor. If there are few electrons, the semiconductor acts like an insulator. Silicon is the most commonly used semiconductor. Atoms of silicon have 14 electrons. Ten of the electrons are bound tightly inside the atom. Four electrons are near the outside of the atom and only loosely bound. The relative ease at which electric current flows through a material is known as conductivity. Conductors (like copper) have very high conductivity. Insulators (like rubber) have very low conductivity. The conductivity of a semiconductor depends on its conditions. For example, at low temperatures and low voltages a semiconductor acts like an insulator. When the temperature and/or the voltage is increased, the conductivity increases and the material acts more like a conductor.

3 Semiconductors Pure semiconductors thermal vibration results in some bonds being broken generating free electrons which move about these leave behind holes which accept electrons from adjacent atoms and therefore also move about electrons are negative charge carriers holes are positive charge carriers At room temperatures there are few charge carriers pure semiconductors are poor conductors this is intrinsic conduction Doping the addition of small amounts of impurities drastically affects its properties an excess of electrons produce an n-type semiconductor an excess of holes produce a p-type semiconductor both n-type and p-type materials have much greater conductivity than pure semiconductors this is extrinsic conduction

4 Semiconductors The dominant charge carriers in a doped semiconductor (e.g. electrons in n-type material) are called majority charge carriers. Other type are minority charge carriers The overall doped material is electrically neutral

5 p-n Junction Diode Potential Barrier the barrier opposes the flow of majority charge carriers and only a small number have enough energy to surmount it this generates a small diffusion current the barrier encourages the flow of minority carriers and any that come close to it will be swept over this generates a small drift current for an isolated junction these two currents must balance each other and the net current is zero

6 p-n Junction Diode The diffusion of positive charge in one direction and negative charge in the other produces a charge imbalance this results in a potential barrier across the junction When p-type and n-type materials are joined this forms a p-n junction majority charge carriers on each side diffuse across the junction where they combine with (and remove) charge carriers of the opposite polarity hence around the junction there are few free charge carriers and we have a depletion layer (also called a space-charge layer)

7 p-n Junction Diode Forward bias if the p-type side is made positive with respect to the n-type side the height of the barrier is reduced more majority charge carriers have sufficient energy to surmount it the diffusion current therefore increases while the drift current remains the same there is thus a net current flow across the junction which increases with the applied voltage 1.5V

8 p-n Junction Diode Reverse bias if the p-type side is made negative with respect to the n-type side the height of the barrier is increased the number of majority charge carriers that have sufficient energy to surmount it rapidly decreases the diffusion current therefore vanishes while the drift current remains the same thus the only current is a small leakage current caused by the (approximately constant) drift current the leakage current is usually negligible (a few na) 1.5V

9 Forward I V Diode Characteristics The load line plots all possible combinations of diode current (I D ) and voltage (V D ) for a given circuit. The maximum I D equals E/R, and the maximum V D equals E. The point where the load line and the characteristic curve intersect is the Q-point, which identifies I D and V D for a particular diode in a given circuit.

10 p-n Junction Diode Forward and Reverse Currents p-n junction current is given approximately by ev I Is exp 1 The Shockley Equation ηkt where I is the current, e is the electronic charge, V is the applied voltage, k is Boltzmann s constant, T is the absolute temperature and (Greek letter eta) is a constant in the range 1 to 2 determined by the junction material for most purposes we can assume = 1

11 Different types of Diodes

12 Different types of Diodes

13 Different types of Diodes

14 Diode Applications - The Half-Wave Rectifier A Typical Battery Charging Circuit

15 Diode Applications - The Half-Wave Rectifier

16 Diode Applications - The Full-Wave Rectifier Voltage across each half of the transformer secondary The full-wave rectifier Diode Applications - The Bridge Rectifier Full-wave load voltage

17 Transistors Transistors BJT Transistors FET Transistors npn pnp JFET Transistors MOSFET Transistors n channel p channel Depletion MOSFET Enhancement MOSFET n channel p channel n channel (NMOS) p channel (PMOS) NMOS +PMOS=CMOS

semiconductor type between layers of the

18 A npn BJT and its schematic symbol. BJT Transistors The BJT is a nonlinear, 3-Terminal device based on the junction diode. A representative structure sandwiches one semiconductor type between layers of the opposite type. We first examine the npn BJT A pnp BJT and its schematic symbol.

19 The npn Transistor BJT Transistors

20 BJT Transistors

21 BJT Transistors the constant β is called the common-emitter current gain

22 BJT Transistors

23 BJT Transistors Input Characteristics Circuit for measuring BJT characteristics.

24 Output Characteristics BJT Transistor

25 BJT Transistor Output Characteristics (a) Conceptual circuit for measuring the i C v CE characteristics of the BJT. (b) The i C v CE characteristics of a practical BJT.

26 The Common-Emitter Amplifier BJT Applications

27 The Field-Effect Transistor (FET) The field-effect transistor, or FET, is also a 3-terminal device, but it is constructed, and functions, somewhat differently than the BJT. There are several types. We begin with the junction FET (JFET), specifically, the n-channel JFET The p-n junction is a typical diode. Holes move from p- type into n-type. Electrons move from n-type into p-type. Region near the p-n junction is left without any available carriers -depletion region Carriers are still present in the n-type channel. Current could flow between drain and source

28 FET Transistors

29 FET Transistors N-channel JFET P-channel JFET

30 FET Transistors

31 n-channel JFET Transfer characteristics, n-channel JFET. Typical output characteristics, n-channel JFET.

32 MOSFET Transistors N-channel MOSFET P-channel MOSFET

33 MOSFET Transistors Depletion mode N-channel MOSFET Enhancement mode N-channel MOSFET

34 MOSFET Transistors N-channel MOSFET P-channel MOSFET

35 MOSFET Transistors Static characteristics of a Depletion and Enhancement mode N-channel MOSFET

36 MOSFET Transistors Enhancement only N-channel MOSFET (NMOS) NMOS can never operate with a negative gate voltage

37 MOSFET Transistors Enhancement only N-channel MOSFET (NMOS) Enhancement only P-channel MOSFET (PMOS)

38 MOSFET Transistors Enhancement only N-channel MOSFET (NMOS) symbol, drain and transfer characteristics

39 CMOS +10v PMOS Q1 PMOSFET 1 0 NMOS Q2 NMOSFET

Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.

Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Introduction: materials Conductors e.g. copper or aluminum have a cloud