On the flicker noise modeling in HV MOSFETs. Vladimír Stejskal, Miloš Skalský, Libor Vojkůvka, Jiří Slezák April 2012
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1 On the flicker noise modeling in HV MOSFETs Vladimír Stejskal, Miloš Skalský, Libor Vojkůvka, Jiří Slezák April, 2012 April 2012 MOS-AK Dresden
2 AGENDA 1. INTRODUCTION HV device description 2. MEASUREMENTS DC behaviour anomaly Statistical noise data evaluation NOISE behaviour anomaly Noise peak detailed data 3. MODELING Modeling strategy Fitting results Model tuning notes Noise anomaly explanation BSIM3 noise implementation 4. SUMMARY References 2 / 13 MOS-AK Dresden 2012
3 HV device description 30V(Vds) 5v(Vgs) PMOS device in 0.25um process Channel is made by HNW layer and highly doped SHN layer on the source side (laterally diffused under the poly gate) Lg=LHDF + LLDS HDF = High Doped Fixed part (LHDF=0.5µm) LDS = Low Doped Scalable part (LLDS=Lg-LHDF) Drain is formed by HPW layer contacted by highly doped SHP and PSD layers Source is contacted by PSD layer Bulk is extended using HDNW beneath the whole device The device is symmetrical with the drain in the middle The device is scalable in the Width and Length directions (Wg_min / Lg_min = 3 / 0.6 [µm/µm]) 3 / 13 MOS-AK Dresden 2012
4 MEASUREMENTS DC behaviour anomaly Lg: 0.6µm 2µm 3µm 10µm IdVg gm & Vds=-5V; Vbs=0,0.5,1V; 27 C; Wg=20µm, Ng=2 4 / 13 MOS-AK Dresden 2012
5 Statistical noise data evaluation IdVg 3 Id biases selected (weak, moderate, strong inversion) 3 dimensions measured (Lg=0.6, 5, 10 µm) 20 cells measured After measurements all SiD curves (SiD = noise current spectral density) are plotted together and statistically evaluated The new artificial percentile XX SiD curve (envelope) is created For modeling purpose we use percentile 90 the worst case All measured SiD curves together percentile 90 SiD curves (3 Id biases) 5 / 13 MOS-AK Dresden 2012
6 Measured NOISE Lg: 0.6µm 5µm 10µm IdVg SiD & Vds=-5V; Vbs=0,0.5,1V; 27 C; Wg=20µm, Ng=2 A non-monotonic dependence of the noise spectral density on the drain current was observed 6 / 13 MOS-AK Dresden 2012
7 Noise behaviour re-measured in detail IdVg [log] gm SiD & Vds=-3V; Vbs=0V; 27 C; Wg=100µm, Lg=10µm, Ng=2 FLICKER NOISE = f(id, gm) => Exact DC model is essential 7 / 13 MOS-AK Dresden 2012
8 MODELING Modeling strategy HDF = High Doped Fixed part (LHDF=0.5µm) LDS = Low Doped Scalable part (LLDS=Lg-LHDF) Lg=LHDF + LLDS Standard BSIM3/4 model does not cover such behaviour A macromodel has been created - a serial combination of 2 BSIM3v3 MOSes and a drift drain part (Verilog_A block- significant for high Id) 8 / 13 MOS-AK Dresden 2012
9 Fitting results Lg: 0.6µm 3µm 10µm IdVg D C gm & Vds=-3V; Vbs=0, 1V; 27 C; Wg=20um, Ng=2 N O I S E SiD 9 / 13 MOS-AK Dresden 2012
10 Model tuning notes D C Ø HDF and LDS parts are each dominant for the different gate lengths: Lg = < Lg < 5 Lg > 7 LDS is negligible HDF mobility is dominant. No gm peak standard MOS behaviour Ø HDF is dominant in the subthreshold (all dimensions) LDS channel part becomes more resistive and it decreases the Id current in the saturation. This causes a gm drop for higher Vg => small peak on the gm. LDS is dominant its mobility model the IdVg shape the gm peak is more significant (its magnitude is modeled by HDF mobility) Ø no problem with scaling in Width direction Ø bulk effect well fitted Ø CV behaviour fits well the measured data N O I S E Ø It was experimentally proved that the HDF part is dominant in terms of flicker noise behaviour. The noise model in LDS is killed and whole noise modeling is done in the HDF part Ø BSIM3 version of the flicker noise model used (noimod=2) => the same peak on SiD as on the gm Ø The noise model is very well predictive for all dimensions no additional scaling equations necessary 10 / 13 MOS-AK Dresden 2012
11 Ideal MOS in saturation: Noise anomaly explanation Flicker noise is Id and also gm dependent Plots show the theoretically expected weight of Id resp. gm to the SiD: 2 Ideal MOS cases simulated: gm=0 & Id=±12% => SiD=±9% gm=±12% & Id=0 => SiD=±16% 11 / 13 MOS-AK Dresden 2012
12 BSIM3 noise implementation 12 / 13 MOS-AK Dresden 2012
13 SUMMARY HV MOSFET structure with non-homogenous channel has been presented The modeling solution introduced DC and flicker noise model fits well the measured data in wide biases range for all supported dimensions Flicker noise dependency on Id and gm has been measured, explained and modeled References [1] Jan Voves, Physics of semiconductor devices, ČVUT Praha, 2001 [2] Kwyro Lee, Michael Shur, Semiconductor Device Modeling for VLSI, Prentice Hall, 1993 [3] Mohan V. Dunga, BSIM4.6.1 MOSFET Model-User s Manual, UC Berkeley, / 13 MOS-AK Dresden 2012
14 14 / 13 MOS-AK Dresden 2012
15 BACKUP SLIDES Measurement setup 15 / 13 MOS-AK Dresden 2012
16 Stanford Research SR570 Current Preamplifier 1 pa/v maximun gain Adjustable bias voltage with test point +-5V max Variable input offset current +-1pA.. -+5mA Low Noise, High BW and Low Drift modes Battery operated 16 / 13 MOS-AK Dresden 2012
17 Agilent 35670A Dynamic signal analyzer khz Bandwith 17 / 13 MOS-AK Dresden 2012
18 18 / 13 MOS-AK Dresden 2012
19 Noise in MOSFET: Models in Spice KF I AF ( ) D SPICE : S id f = AF ( 0.5 to 2), EF (0.8 to 1.2) and KF EF 2 f Cox L eff Easy to extract Difficulty of this model : not being able to follow the measurements data in all bias regime. m id HSPICE : EF gm dependency instead of ID accuracy of this model relies on the gm dependency versus VGS BSIM3v3 : S qktµ I (f ) = eff D 2 γ L C eff ox S ( f ) = S wi 1 N + N * NOIA * Ln 0 + f NL + N * C ox KF W eff L k T NOIA qw N* 2 eff L eff γ f g eff ( f ) = I 2 D id NOIB( N N ) + NOIC( N N ) + S id ( f ) S = Wi S Wi 0 ( f ) S lim ( f ) ( f ) + ( f ) S lim L 2 f L ktδl 2 clmi D qf EF L 2 eff Weff γ 1/ good continuity to fit noise below vth, above vth in linear and saturation regime 2/ good fiting model, physically not yet completely proven NOIA + NOIB* NL + NOIC* NL 2 ( * N ) 2 L + N 19 / 13 MOS-AK Dresden 2012
20 Noise in MOSFET: Experimental results W/L=10/0.24 Results on TSMC 0.25um technology, 2.5V CMOS technology f = 1Hz, VDS=50mV, W/L = 10um/0.24um BSIM3v3 (NOIA= V -1 m -3, N*= m -2, NOIB= V -1 and NOIC= V -1 m) Si D (f) (A2/Hz) DATA HSPICE BSIM3v3 HSPICE (KF= EF=1) ,50E VGS (V) gm(a/v) 2,00E-04 1,50E-04 1,00E-04 5,00E-05 VGS(V) 0,00E ,5 1 1,5 2 2,5 3 The fall down in the fit of HSPICE is attributed to the fall down of gm at high vgs due to series resistance. This can be adjusted by making difference (in the extraction procedure) between the intrinsic noise and the series resistance noise 20 / 13 MOS-AK Dresden 2012
21 21 / 13 MOS-AK Dresden 2012
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