Lecture 31 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 25, 2007
|
|
|
- Frederick Kennedy
- 5 years ago
- Views:
Transcription
1 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-1 Lecture 31 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 25, 2007 Contents: 1. Short-channel effects (cont.) Reading assignment: P. K. Ko, Approaches to Scaling.
2 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-2 Key questions Why does the threshold voltage seem to depend on the gate length of a MOSFET? Why does the threshold voltage of a MOSFET seem to depend on V DS?
3 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture Short-channel effects (cont.) V T dependence on L Ideally, V T does not depend on L, it only depends on x ox and N A. If L is short enough, depletion regions of source and drain start overlapping underneath channel. "long" MOSFET "short" MOSFET n + n + n + n + n + n + p p ΔE C E C E fe E C E fe V T independent of L V T depends on L: L V T VT VT (long) L
4 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-4 Complex 2D electrostatic problem: ΔV T depends on the relative strength of the lateral electrostatics vs. the transversal electrostatics ( electrostatic integrity ). The tighter the gate controls φ s, the weaker ΔV T dependence on L. Key dependencies: x ox ΔV T N A ΔV T x j L eff = L x j ΔV T L n + n + x j L eff n + 0.7x j p This is bad! long MOSFET: V T = f(x ox,n A ) short MOSFET: V T = f(x ox,n A,L,x j ) Most important consequence: V T harder to control in manufacturing environment. V T model in next section.
5 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-5 Drain-induced barrier lowering (DIBL) Depletion region associated with drain junction expands as V DS additional V T shift. n + n + n + p E C E fe VT VT (long) VDS L
6 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-6 V DS =1.5 V V DS =0.05 V [from Liu et al., TED 40, 86 (1993)] V DS =0.05 V V DS =1.5 V Liu, Z.-H., C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng. "Threshold Voltage Model for Deep-Submicrometer MOSFET's." IEEE Transcations on Electron Devices 40, no. 1 (1993): Copyright 1993 IEEE. Used with permission.
7 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-7 Simple analytical approximation to ΔV T [Liu et al., TED 40, 86 (1993)]: ΔV T = [3(φ bi φ sth )+ V DS ]e L eff /λ + 2 (φ bi φ sth )(φ bi φ sth + V DS )e L eff /2λ with characteristic length: λ = ɛ s ɛox x ox x dmax and L eff = L x j Quantification of DIBL: DIBL = V T (V DS = V DD ) V T (V DS =0.1 V ) V DD 0.1 mv/v for a certain L device.
8 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-8
9 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-9
10 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-10
11 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 31-11
12 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture MOSFET design approach to manage DIBL: 1. shallower S/D junctions: x j =0.1 µm 0.05 µm 2. thinner gate oxide: x ox =9 nm 6 nm 3. increased body doping: N A = cm cm 3
13 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture Comparison of simple model with 2D simulations: Liu, Z.-H., C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng. "Threshold Voltage Model for Deep-Submicrometer MOSFET's." IEEE Transcations on Electron Devices 40, no. 1 (1993): Copyright 1993 IEEE. Used with permission.
14 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture Comparison of simple model with experiments: Liu, Z.-H., C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng. "Threshold Voltage Model for Deep-Submicrometer MOSFET's." IEEE Transcations on Electron Devices 40, no. 1 (1993): Copyright 1993 IEEE. Used with permission. Liu, Z.-H., C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng. "Threshold Voltage Model for Deep-Submicrometer MOSFET's." IEEE Transcations on Electron Devices 40, no. 1 (1993): Copyright 1993 IEEE. Used with permission.
15 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture DIBL also affects I off : V DS V T I off Figure removed due to copyright restrictions. Shift of subthreshold curves. Figure 5 on page 41 in Fichtner, W., and H. W. Potzl. "MOS Modelling by Analytical Approximations." International Journal of Electronics 46, no. 1 (1979):
16 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture Key conclusions V T depends on L and V DS : For short L, V T depends on L: L V T. Drain-induced barrier lowering (DIBL): impact of V DS on V T : V DS V T. ΔV T reflects relative strength of lateral electrostatics vs. transveral electrostatics ( electrostatic integrity ). Electrostatic integrity improves if x ox, N A, L, x j. DIBL problematic because: V T hard to control I off
Lecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-1 Lecture 33 - The Short Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 30, 2007 Contents: 1. MOSFET scaling
Lecture 24 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) The Long Metal-Oxide-Semiconductor Field-Effect Transistor
6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 24-1 Lecture 24 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) The Long Metal-Oxide-Semiconductor Field-Effect
Drive performance of an asymmetric MOSFET structure: the peak device
MEJ 499 Microelectronics Journal Microelectronics Journal 30 (1999) 229 233 Drive performance of an asymmetric MOSFET structure: the peak device M. Stockinger a, *, A. Wild b, S. Selberherr c a Institute
Session 10: Solid State Physics MOSFET
Session 10: Solid State Physics MOSFET 1 Outline A B C D E F G H I J 2 MOSCap MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor: Al (metal) SiO2 (oxide) High k ~0.1 ~5 A SiO2 A n+ n+ p-type Si (bulk)
Why Scaling? CPU speed Chip size R, C CPU can increase speed by reducing occupying area.
Why Scaling? Higher density : Integration of more transistors onto a smaller chip : reducing the occupying area and production cost Higher Performance : Higher current drive : smaller metal to metal capacitance
Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018
Fin-Shaped Field Effect Transistor (FinFET) Min Ku Kim 03/07/2018 ECE 658 Sp 2018 Semiconductor Materials and Device Characterizations OUTLINE Background FinFET Future Roadmap Keeping up w/ Moore s Law
NAME: Last First Signature
UNIVERSITY OF CALIFORNIA, BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences EE 130: IC Devices Spring 2003 FINAL EXAMINATION NAME: Last First Signature STUDENT
Source/Drain Parasitic Resistance Role and Electric Coupling Effect in Sub 50 nm MOSFET Design
Source/Drain Parasitic Resistance Role and Electric Coupling Effect in Sub 50 nm MOSFET Design 9/25/2002 Jun Yuan, Peter M. Zeitzoff*, and Jason C.S. Woo Department of Electrical Engineering University
Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
Microelectronic Circuits Introduction to MOSFET MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 1 MOSFET Construction MOSFET (Metal Oxide Semiconductor Field Effect Transistor) Slide 2
Lecture-45. MOS Field-Effect-Transistors Threshold voltage
Lecture-45 MOS Field-Effect-Transistors 7.4. Threshold voltage In this section we summarize the calculation of the threshold voltage and discuss the dependence of the threshold voltage on the bias applied
Solid State Device Fundamentals
Solid State Device Fundamentals 4.4. Field Effect Transistor (MOSFET) ENS 463 Lecture Course by Alexander M. Zaitsev alexander.zaitsev@csi.cuny.edu Tel: 718 982 2812 4N101b 1 Field-effect transistor (FET)
MOSFET short channel effects
MOSFET short channel effects overview Five different short channel effects can be distinguished: velocity saturation drain induced barrier lowering (DIBL) impact ionization surface scattering hot electrons
ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha
ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor
Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;
Chapter 3 Field-Effect Transistors (FETs) 3.1 Introduction Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism; The concept has been known
MOS Capacitance and Introduction to MOSFETs
ECE-305: Fall 2016 MOS Capacitance and Introduction to MOSFETs Professor Peter Bermel Electrical and Computer Engineering Purdue University, West Lafayette, IN USA pbermel@purdue.edu 11/4/2016 Pierret,
Sub-Threshold Region Behavior of Long Channel MOSFET
Sub-threshold Region - So far, we have discussed the MOSFET behavior in linear region and saturation region - Sub-threshold region is refer to region where Vt is less than Vt - Sub-threshold region reflects
Modeling & Analysis of Surface Potential and Threshold Voltage for Narrow channel 3D FDSOI MOSFET
Modeling & Analysis of Surface Potential and Threshold Voltage for Narrow channel 3D... 273 IJCTA, 9(22), 2016, pp. 273-278 International Science Press Modeling & Analysis of Surface Potential and Threshold
Semiconductor TCAD Tools
Device Design Consideration for Nanoscale MOSFET Using Semiconductor TCAD Tools Teoh Chin Hong and Razali Ismail Department of Microelectronics and Computer Engineering, Universiti Teknologi Malaysia,
Two Dimensional Analytical Threshold Voltages Modeling for Short-Channel MOSFET
Two Dimensional Analytical Threshold Voltages Modeling for Short-Channel MOSFET Sanjeev kumar Singh, Vishal Moyal Electronics & Telecommunication, SSTC-SSGI, Bhilai, Chhatisgarh, India Abstract- The aim
PHYSICS-BASED THRESHOLD VOLTAGE MODELING WITH REVERSE SHORT CHANNEL EFFECT
Journal of Modeling and Simulation of Microsystems, Vol. 2, No. 1, Pages 51-56, 1999. PHYSICS-BASED THRESHOLD VOLTAGE MODELING WITH REVERSE SHORT CHANNEL EFFECT K-Y Lim, X. Zhou, and Y. Wang School of
Lecture 4. MOS transistor theory
Lecture 4 MOS transistor theory 1.7 Introduction: A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage
Channel Engineering for Submicron N-Channel MOSFET Based on TCAD Simulation
Australian Journal of Basic and Applied Sciences, 2(3): 406-411, 2008 ISSN 1991-8178 Channel Engineering for Submicron N-Channel MOSFET Based on TCAD Simulation 1 2 3 R. Muanghlua, N. Vittayakorn and A.
Performance Evaluation of MISISFET- TCAD Simulation
Performance Evaluation of MISISFET- TCAD Simulation Tarun Chaudhary Gargi Khanna Rajeevan Chandel ABSTRACT A novel device n-misisfet with a dielectric stack instead of the single insulator of n-mosfet
MOS Field Effect Transistors
MOS Field Effect Transistors A gate contact gate interconnect n polysilicon gate source contacts W active area (thin oxide area) polysilicon gate contact metal interconnect drain contacts A bulk contact
Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs)
Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) Device Structure N-Channel MOSFET Providing electrons Pulling electrons (makes current flow) + + + Apply positive voltage to gate: Drives away
3-D Modelling of the Novel Nanoscale Screen-Grid Field Effect Transistor (SGFET)
3-D Modelling of the Novel Nanoscale Screen-Grid Field Effect Transistor (SGFET) Pei W. Ding, Kristel Fobelets Department of Electrical Engineering, Imperial College London, U.K. J. E. Velazquez-Perez
Design cycle for MEMS
Design cycle for MEMS Design cycle for ICs IC Process Selection nmos CMOS BiCMOS ECL for logic for I/O and driver circuit for critical high speed parts of the system The Real Estate of a Wafer MOS Transistor
MOSFET FUNDAMENTALS OPERATION & MODELING
MOSFET FUNDAMENTALS OPERATION & MODELING MOSFET MODELING AND OPERATION MOSFET Fundamentals MOSFET Physical Structure and Operation MOSFET Large Signal I-V Characteristics Subthreshold Triode Saturation
Nanoscale MOSFET Modeling for the Design of Low-power Analog and RF Circuits Part I
Nanoscale MOSFET Modeling for the Design of Low-power Analog and RF Circuits Part I Invited Paper Christian Enz, Francesco Chicco, Alessandro Pezzotta LAB, EPFL, Neuchâtel, Switzerland christian.enz@epfl.ch
Analog Performance of Scaled Bulk and SOI MOSFETs
Analog Performance of Scaled and SOI MOSFETs Sushant S. Suryagandh, Mayank Garg, M. Gupta, Jason C.S. Woo Department. of Electrical Engineering University of California, Los Angeles CA 99, USA. woo@icsl.ucla.edu
Design of 45 nm Fully Depleted Double Gate SOI MOSFET
Design of 45 nm Fully Depleted Double Gate SOI MOSFET 1. Mini Bhartia, 2. Shrutika. Satyanarayana, 3. Arun Kumar Chatterjee 1,2,3. Thapar University, Patiala Abstract Advanced MOSFETS such as Fully Depleted
Experiment 3. 3 MOSFET Drain Current Modeling. 3.1 Summary. 3.2 Theory. ELEC 3908 Experiment 3 Student#:
Experiment 3 3 MOSFET Drain Current Modeling 3.1 Summary In this experiment I D vs. V DS and I D vs. V GS characteristics are measured for a silicon MOSFET, and are used to determine the parameters necessary
Part II: The MOS Transistor Technology. J. SÉE 2004/2005
Part II: The MOS Transistor Technology J. SÉE johann.see@ief.u-psud.fr 2004/2005 Lecture plan Towards the nanotechnologies... data storage The data processing through the ages MOS transistor in logic-gates
Analysis on Effective parameters influencing Channel Length Modulation Index in MOS
Analysis on Effective parameters influencing Channel Length Modulation ndex in MOS Abhishek Debroy, Rahul Choudhury,Tanmana Sadhu 2 Department of ECE,NT Agartala, Tripura 2 Department of ECE,St. Thomas
Substrate Bias Effects on Drain Induced Barrier Lowering (DIBL) in Short Channel NMOS FETs
Australian Journal of Basic and Applied Sciences, 3(3): 1640-1644, 2009 ISSN 1991-8178 Substrate Bias Effects on Drain Induced Barrier Lowering (DIBL) in Short Channel NMOS FETs 1 1 1 1 2 A. Ruangphanit,
Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and
Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body
MOSFET & IC Basics - GATE Problems (Part - I)
MOSFET & IC Basics - GATE Problems (Part - I) 1. Channel current is reduced on application of a more positive voltage to the GATE of the depletion mode n channel MOSFET. (True/False) [GATE 1994: 1 Mark]
Assignment 1 SOLUTIONS
ELEC5509 Assignment 1 SOLUTIONS September 2013 The nmos technology used in ELEC4609 provides enhancement MOSFETs with VT = 0.7V and depletion MOSFETs with VTd = -3.0V. The gate oxide thickness t ox = 50nm
EEC 216 Lecture #8: Leakage. Rajeevan Amirtharajah University of California, Davis
EEC 216 Lecture #8: Leakage Rajeevan Amirtharajah University of California, Davis Outline Announcements Review: Low Power Interconnect Finish Lecture 7 Leakage Mechanisms Circuit Styles for Low Leakage
MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.
MOSFET Terminals The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals. For an n-channel MOSFET, the SOURCE is biased at a lower potential (often
ITT Technical Institute. ET215 Devices 1. Unit 8 Chapter 4, Sections
ITT Technical Institute ET215 Devices 1 Unit 8 Chapter 4, Sections 4.4 4.5 Chapter 4 Section 4.4 MOSFET Characteristics A Metal-Oxide semiconductor field-effect transistor is the other major category of
problem grade total
Fall 2005 6.012 Microelectronic Devices and Circuits Prof. J. A. del Alamo Name: Recitation: November 16, 2005 Quiz #2 problem grade 1 2 3 4 total General guidelines (please read carefully before starting):
Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1
Lecture 13 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1 Outline Continue MOSFET Qualitative Operation epletion-type MOSFET Characteristics Biasing Circuits and Examples Enhancement-type
Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1
Lecture 15 Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1 Outline MOSFET transistors Introduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Comparison between JFET and
8. Characteristics of Field Effect Transistor (MOSFET)
1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors
Future MOSFET Devices using high-k (TiO 2 ) dielectric
Future MOSFET Devices using high-k (TiO 2 ) dielectric Prerna Guru Jambheshwar University, G.J.U.S. & T., Hisar, Haryana, India, prernaa.29@gmail.com Abstract: In this paper, an 80nm NMOS with high-k (TiO
3: MOS Transistors. Non idealities
3: MOS Transistors Non idealities Inversion Major cause of non-idealities/complexities: Who controls channel (and how)? Large Body(Substrate) Source Voltage V G V SB - - - - - - - - n+ n+ - - - - - - -
4: Transistors Non idealities
4: Transistors Non idealities Inversion Major cause of non-idealities/complexities: Who controls channel (and how)? Large Body(Substrate) Source Voltage V G V SB - - - - - - - - n+ n+ - - - - - - - - -
Field Effect Transistors (FET s) University of Connecticut 136
Field Effect Transistors (FET s) University of Connecticut 136 Field Effect Transistors (FET s) FET s are classified three ways: by conduction type n-channel - conduction by electrons p-channel - conduction
Advanced MOSFET Basics. Dr. Lynn Fuller
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Advanced MOSFET Basics Dr. Lynn Fuller Webpage: http://people.rit.edu/lffeee 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035
INTERNATIONAL JOURNAL OF APPLIED ENGINEERING RESEARCH, DINDIGUL Volume 1, No 3, 2010
Low Power CMOS Inverter design at different Technologies Vijay Kumar Sharma 1, Surender Soni 2 1 Department of Electronics & Communication, College of Engineering, Teerthanker Mahaveer University, Moradabad
Charge-Based Continuous Equations for the Transconductance and Output Conductance of Graded-Channel SOI MOSFET s
Charge-Based Continuous Equations for the Transconductance and Output Conductance of Graded-Channel SOI MOSFET s Michelly de Souza 1 and Marcelo Antonio Pavanello 1,2 1 Laboratório de Sistemas Integráveis,
Microelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor In this chapter, we will: Study and understand the operation and characteristics of the various types
Tunneling Field Effect Transistors for Low Power ULSI
Tunneling Field Effect Transistors for Low Power ULSI Byung-Gook Park Inter-university Semiconductor Research Center and School of Electrical and Computer Engineering Seoul National University Outline
Department of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
Pushing Ultra-Low-Power Digital Circuits
Pushing Ultra-Low-Power Digital Circuits into the Nanometer Era David Bol Microelectronics Laboratory Ph.D public defense December 16, 2008 Pushing Ultra-Low-Power Digital Circuits into the Nanometer Era
ELEC 2210 EXPERIMENT 8 MOSFETs
ELEC 10 EXPERIMENT 8 MOSFETs Objectives: The experiments in this laboratory exercise will provide an introduction to the MOSFET. You will use the Bit Bucket breadboarding system to build and test several
MSE 410/ECE 340: Electrical Properties of Materials Fall 2016 Micron School of Materials Science and Engineering Boise State University
MSE 410/ECE 340: Electrical Properties of Materials Fall 2016 Micron School of Materials Science and Engineering Boise State University Practice Final Exam 1 Read the questions carefully Label all figures
BJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
Chapter 6: Field-Effect Transistors
Chapter 6: Field-Effect Transistors Islamic University of Gaza Dr. Talal Skaik MOSFETs MOSFETs have characteristics similar to JFETs and additional characteristics that make then very useful. There are
Tunnel FET architectures and device concepts for steep slope switches Joachim Knoch
Tunnel FET architectures and device concepts for steep slope switches Joachim Knoch Institute of Semiconductor Electronics RWTH Aachen University Sommerfeldstraße 24 52074 Aachen Outline MOSFETs Operational
Characterization of Variable Gate Oxide Thickness MOSFET with Non-Uniform Oxide Thicknesses for Sub-Threshold Leakage Current Reduction
2012 International Conference on Solid-State and Integrated Circuit (ICSIC 2012) IPCSIT vol. 32 (2012) (2012) IACSIT Press, Singapore Characterization of Variable Gate Oxide Thickness MOSFET with Non-Uniform
4.1 Device Structure and Physical Operation
10/12/2004 4_1 Device Structure and Physical Operation blank.doc 1/2 4.1 Device Structure and Physical Operation Reading Assignment: pp. 235-248 Chapter 4 covers Field Effect Transistors ( ) Specifically,
Organic Electronics. Information: Information: 0331a/ 0442/
Organic Electronics (Course Number 300442 ) Spring 2006 Organic Field Effect Transistors Instructor: Dr. Dietmar Knipp Information: Information: http://www.faculty.iubremen.de/course/c30 http://www.faculty.iubremen.de/course/c30
Advanced MOSFET Basics. Dr. Lynn Fuller
ROCHESTER INSTITUTE OF TECHNOLOGY MICROELECTRONIC ENGINEERING Advanced MOSFET Basics Dr. Lynn Fuller Webpage: http://people.rit.edu/lffeee 82 Lomb Memorial Drive Rochester, NY 14623-5604 Tel (585) 475-2035
Acknowledgements. Curriculum Vitæ. List of Figures. List of Tables. 1 Introduction Si MOSFET Scaling... 2
Contents Acknowledgements Curriculum Vitæ Abstract List of Figures List of Tables v vi viii xii xviii 1 Introduction 1 1.1 Si MOSFET Scaling......................... 2 2 General MOSFET Scaling Theory 7
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds)! Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
Topic 2. Basic MOS theory & SPICE simulation
Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris, Ch 2 & 5.1-5.3 Rabaey, Ch 3) URL: www.ee.ic.ac.uk/pcheung/
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2. Basic MOS theory & SPICE simulation. MOS Transistor
Conduction Characteristics of MOS Transistors (for fixed Vds) Topic 2 Basic MOS theory & SPICE simulation Peter Cheung Department of Electrical & Electronic Engineering Imperial College London (Weste&Harris,
AS THE GATE-oxide thickness is scaled and the gate
1174 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 6, JUNE 1999 A New Quasi-2-D Model for Hot-Carrier Band-to-Band Tunneling Current Kuo-Feng You, Student Member, IEEE, and Ching-Yuan Wu, Member,
EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters
EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters Dept. of Electrical and Computer Engineering University of California, Davis March 18, 2010 Reading: Rabaey Chapter 3 [1]. Reference: Kang
EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND
Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs
Record I on (0.50 ma/μm at V DD = 0.5 V and I off = 100 na/μm) 25 nm-gate-length ZrO 2 /InAs/InAlAs MOSFETs Sanghoon Lee 1*, V. Chobpattana 2,C.-Y. Huang 1, B. J. Thibeault 1, W. Mitchell 1, S. Stemmer
M. Jagadesh Kumar and G. Venkateshwar Reddy Department of Electrical Engineering, Indian Institute of Technology, Hauz Khas, New Delhi , India
M. Jagadesh Kumar and G. V. Reddy, "Diminished Short Channel Effects in Nanoscale Double- Gate Silicon-on-Insulator Metal Oxide Field Effect Transistors due to Induced Back-Gate Step Potential," Japanese
Depletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
LECTURE 14. (Guest Lecturer: Prof. Tsu-Jae King) Last Lecture: Today:
LECTURE 14 (uest Lecturer: Prof. Tsu-Jae King) Last Lecture: emiconductors, oping PN Junction iodes iode tructure and I vs. V characteristics iode Circuits Today: N-Channel MOFET tructure The MOFET as
MOS TRANSISTOR THEORY
MOS TRANSISTOR THEORY Introduction A MOS transistor is a majority-carrier device, in which the current in a conducting channel between the source and the drain is modulated by a voltage applied to the
Sub-threshold Leakage Current Reduction Using Variable Gate Oxide Thickness (VGOT) MOSFET
Microelectronics and Solid State Electronics 2013, 2(2): 24-28 DOI: 10.5923/j.msse.20130202.02 Sub-threshold Leakage Current Reduction Using Variable Gate Oxide Thickness (VGOT) MOSFET Keerti Kumar. K
EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017
EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017 Objective: The objective of this laboratory experiment is to become more familiar with the operation of
A ROBUST PHYSICAL AND PREDICTIVE
A ROBUST PHYSICAL AND PREDICTIVE MODEL FOR DEEP-SUBMICROMETER MOS CIRCUIT SIMULATION by J. H. Huang, Z. H. Liu, M. C. Jeng, P. K. KO, C. Hu Memorandum No. UCB/ERL M93/57 21 July 1993 A ROBUST PHYSICAL
Three Terminal Devices
Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering
ECE 340 Lecture 40 : MOSFET I
ECE 340 Lecture 40 : MOSFET I Class Outline: MOS Capacitance-Voltage Analysis MOSFET - Output Characteristics MOSFET - Transfer Characteristics Things you should know when you leave Key Questions How do
A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight-Pitch Process
A New Self-aligned Quantum-Well MOSFET Architecture Fabricated by a Scalable Tight-Pitch Process Jianqiang Lin, Xin Zhao, Tao Yu, Dimitri A. Antoniadis, and Jesús A. del Alamo Microsystems Technology Laboratories,
High mobility 4H-SiC MOSFET using a combination of counter-doping and interface trap passivation
1 SiC MOS Workshop August 14 th 2014, University of Maryland High mobility 4H-SiC MOSFET using a combination of counter-doping and interface trap passivation Aaron Modic 1, A. Ahyi 1, G. Liu 2, Y. Xu 2,P.
ECSE-6300 IC Fabrication Laboratory Lecture 7 MOSFETs. Lecture Outline
ECSE-6300 IC Fabrication Laboratory Lecture 7 MOSFETs Prof. Rensselaer Polytechnic Institute Troy, NY 12180 Office: CII-6229 Tel.: (518) 276-2909 e-mails: luj@rpi.edu http://www.ecse.rpi.edu/courses/s16/ecse
EE241 - Spring 2013 Advanced Digital Integrated Circuits. Announcements. Sign up for Piazza if you haven t already
EE241 - Spring 2013 Advanced Digital Integrated Circuits Lecture 2: Scaling Trends and Features of Modern Technologies Announcements Sign up for Piazza if you haven t already 2 1 Assigned Reading R.H.
Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor
Electronic Circuits for Mechatronics ELCT 609 Lecture 6: MOS-FET Transistor Assistant Professor Office: C3.315 E-mail: eman.azab@guc.edu.eg 1 Introduction Why we call it Transistor? The name came as an
Zota, Cezar B.; Lindelow, Fredrik; Wernersson, Lars Erik; Lind, Erik
InGaAs tri-gate MOSFETs with record on-current Zota, Cezar B.; Lindelow, Fredrik; Wernersson, Lars Erik; Lind, Erik Published in: 6 IEEE International Electron Devices Meeting, IEDM 6 DOI:.9/IEDM.6.7886
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology Using SPICE
RESEARCH ARTICLE OPEN ACCESS Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology Using SPICE Mugdha Sathe*, Dr. Nisha Sarwade** *(Department of Electrical Engineering, VJTI, Mumbai-19)
Power MOSFET Zheng Yang (ERF 3017,
ECE442 Power Semiconductor Devices and Integrated Circuits Power MOSFET Zheng Yang (ERF 3017, email: yangzhen@uic.edu) Evolution of low-voltage (
FET(Field Effect Transistor)
Field Effect Transistor: Construction and Characteristic of JFETs. Transfer Characteristic. CS,CD,CG amplifier and analysis of CS amplifier MOSFET (Depletion and Enhancement) Type, Transfer Characteristic,
PERFORMANCE EVALUATION OF FD-SOI MOSFETS FOR DIFFERENT METAL GATE WORK FUNCTION
PERFORMANCE EVALUATION OF FD-SOI MOSFETS FOR DIFFERENT METAL GATE WORK FUNCTION Deepesh Ranka 1, Ashwani K. Rana 2, Rakesh Kumar Yadav 3, Kamalesh Yadav 4, Devendra Giri 5 # Department of Electronics and
Drain. Drain. [Intel: bulk-si MOSFETs]
![Drain. Drain. [Intel: bulk-si MOSFETs]](/thumbs/89/97695223.jpg "Drain. Drain. [Intel: bulk-si MOSFETs]")
1 Introduction For more than 40 years, the evolution and growth of very-large-scale integration (VLSI) silicon-based integrated circuits (ICs) have followed from the continual shrinking, or scaling, of
EECS130 Integrated Circuit Devices
EECS130 Integrated Circuit Devices Professor Ali Javey 11/01/2007 MOSFETs Lecture 5 Announcements HW7 set is due now HW8 is assigned, but will not be collected/graded. MOSFET Technology Scaling Technology
LECTURE 4 SPICE MODELING OF MOSFETS
LECTURE 4 SPICE MODELING OF MOSFETS Objectives for Lecture 4* Understanding the element description for MOSFETs Understand the meaning and significance of the various parameters in SPICE model levels 1
45nm Bulk CMOS Within-Die Variations. Courtesy of C. Spanos (UC Berkeley) Lecture 11. Process-induced Variability I: Random
45nm Bulk CMOS Within-Die Variations. Courtesy of C. Spanos (UC Berkeley) Lecture 11 Process-induced Variability I: Random Random Variability Sources and Characterization Comparisons of Different MOSFET
EFFECT OF THRESHOLD VOLTAGE AND CHANNEL LENGTH ON DRAIN CURRENT OF SILICON N-MOSFET
EFFECT OF THRESHOLD VOLTAGE AND CHANNEL LENGTH ON DRAIN CURRENT OF SILICON N-MOSFET A.S.M. Bakibillah Nazibur Rahman Dept. of Electrical & Electronic Engineering, American International University Bangladesh
DIGITAL VLSI LAB ASSIGNMENT 1
DIGITAL VLSI LAB ASSIGNMENT 1 Problem 1: NMOS and PMOS plots using Cadence. In this exercise, you are required to generate both NMOS and PMOS I-V device characteristics (I/P and O/P) using Cadence (Use
Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Junction Field-effect Transistors Dr. Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of the Precedent Lecture Explain the Operation Class A Power
MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I
MEASUREMENT AND INSTRUMENTATION STUDY NOTES The MOSFET The MOSFET Metal Oxide FET UNIT-I As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available