Part II: The MOS Transistor Technology. J. SÉE 2004/2005
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1 Part II: The MOS Transistor Technology J. SÉE 2004/2005
2 Lecture plan Towards the nanotechnologies... data storage The data processing through the ages MOS transistor in logic-gates gates The microelectronics of today : MOSFET s chronicle of a death foretold? The possible alternatives Coulomb blockade for the nanoelectronics
3 The numerical integrated circuit star The MOSFET transistor
4 The MOSFET transistor : operating principle Metal-Oxide-Semiconductor Field Effect Transistor Gate L G e ox Source P Oxide Drain P X j Substrate N
5 + The MOSFET transistor : operating principle S ZCE 0>V GS >V T G D S 0>V T>VGS G D B V DS =0 1- The electrons are pushed away to the bottom of the substrate B V DS =0 2- A conducting hole chanel is formed between source and drain
6 The MOSFET transistor : operating principle S 0>V T>VGS G Courant I D D I D current B 3- Movement of holes : I D current starts to flow V DS <0
7 The MOSFET transistor : operating principle Another way to see the transistor... mobile barrier V S V G V T V D Source Drain reservoirs
8 The MOSFET transistor : operating principle V(0) = VGS VT I Liquid flow dv ( x) = α WV( x) dx VGS V(x) V DS volume slope speed Source 0 x V T L G Drain V( L ) = V V V G GS T DS Steady-state regime αw 2 2 I = V (0) V ( LG ) L G After simplification 2 αw V DS I = ( VGS VT ) VDS L G 2
9 The MOSFET transistor : operating principle Saturation as soon as V < V V < 0 DS GS T V GS 0 x V(x) V T V DS Source L G Saturation current αw I = ( V ) 2 GS VT 2L G Drain With a bit more of theory α = µ C p ox µ p : hole mobility C ox : capacitance per unit area
10 The MOSFET transistor : operating principle Ohmic region I D V SDsat I = K ( VGS VT ) VDS V 2 2 DS saturation zone V<V<0 GS T Current source region K I = ( VGS VT ) 2 2 V SD V>V GS T with : = µ W K Cox L G
11 The MOSFET transistor : operating principle What it is necessary to retain 1 I L G If L G decreases, the current flowing in the transistor increases
12 The numerical integrated circuit star The CMOS logic gates
13 A basic logic-gate : the CMOS inverter In digital electronics, the transistor is used as a switch G NMOS D G PMOS D S S OFF 0 V TN ON V GS ON V TP 0 OFF V GS
14 A basic logic-gate : the CMOS inverter V DD G PMOS S D I ON ON V TP OFF 0 V GS P V E NMOS S C V S OFF 0 V TN ON V GS N V GS N =V E V GS P =V E -V DD
15 A basic logic-gate : the CMOS inverter V DD G PMOS S D I ON ON OFF V E V E NMOS S C V S 0 OFF V TN ON V DD +V TP V DD
16 A basic logic-gate : the CMOS inverter V DD V E =0 case PMOS ON OFF I ON V E NMOS C V S 0 OFF V TN ON V DD +V TP V DD V E =0 V S =V DD
17 A basic logic-gate : the CMOS inverter V DD V E =V DD case PMOS ON OFF I ON V E NMOS C V S 0 OFF V TN ON V DD +V TP V DD V S =0 V E =V DD
18 A basic logic-gate : the CMOS inverter The circuit speed is linked to the charge/discharge of the capacitor C To increase the frequency of the circuits, we need to increase the current flowing in the transistors The length of the gate is worth to be decreasing
19 Lecture plan Towards the nanotechnologies... data storage The data processing through the ages MOS transistor in logic-gates gates The microelectronics of today : MOSFET s chronicle of a death foretold? The possible alternatives Coulomb blockade for the nanoelectronics
20 The microelectronics of today MOSFET s chronicle of a death foretold?
21 MOSFET transistor : chronicle of a death foretold? The roadmap... Gate length (µm) ko 1,6µm 1Mo 4Mo 16Mo Bell Labs 0,14µm 64Mo 256Mo 0,15 µm 512Mo 1Go2Go IBM 0,1µm 6Go Toshiba 40nm 16Go 48Go 30nm LETI 20nm ST 16nm Production Estimation Research
22 MOSFET transistor : chronicle of a death foretold? Today Today Pentium IV 0.13 µm Tr. f=3 GHz P~100 W
23 Integrated circuit scale Department km 2 Integrated circuit 2 2 cm 2 Headlight of truck 30 cm France km 2 Truck 2,5 m 10 m CMOS inverter 1,5 µm 1,5 µm (Lay out) Wafer 700 cm 2 Transistor gate < 0,1 µm
24 MOSFET transistor : chronicle of a death foretold? Today Research STMicroelectronics 16 nm 2001
25 MOSFET transistor : chronicle of a death foretold? Today Research Intel 15 nm 2002
26 MOSFET transistor : chronicle of a death foretold? oxide thickness thiner and thiner V DD (voltage breakdown) leakage tunnel currents appear P static t retention e ox Source Drain ZCE V DS L G Solution: e ox to improve gate control Substrat Proximity source-drain I OFF g m Quantization phenomena e max e min relative error of SiO 2 layer thickness device parameter dispersion
27 Lecture plan Towards the nanotechnologies... data storage The data processing through the ages MOS transistor in logic-gates gates The microelectronics of today : MOSFET s chronicle of a death foretold? The possible alternatives Coulomb blockade for the nanoelectronics
28 The possible alternatives or how the nanotechnologies can save the electronics...
29 The carbon nanotubes
30 The magnetic nanocolumns Today Contribution of nanotechnologies granulary film in-plane magnetization 100 grains/bit nanometric columns perpendicular magnetization 1 bit per column
31 Molecular electronics A memory example Difficulty of realization J. SÉE - VSOP Lecture on Coulomb blockade for nanoelectronics
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