IGBT Module Sixpack MWI 25-12A7(T) I C25 = 50 A V CES = 1200 V V CE(sat) typ. = 2.2 V. Short Circuit SOA Capability Square RBSOA
|
|
- Karen Young
- 5 years ago
- Views:
Transcription
1 MWI 25127(T) IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 50 CES = 1200 CE(sat) typ. = 2.2 Part name (Marking on product) MWI25127 MWI25127T 13 T version T E72873 T Features: NPT IGBT technology low saturation voltage positive temperature coeffi cient for easy paralleling low switching losses switching frequency up to 30 khz square RBSO, no latch up high short circuit capability MOS input, voltage controlled ultra fast free wheeling diodes solderable pi for PCB mounting space savings reduced protection circuits pplication: C motor control C servo and robot drives power supplies Package: UL registered Industry standard E2pack package with copper base plate package designed for wave soldering 2017 IXYS ll rights reserved 1
2 MWI 25127(T) IGBTs CES collector emitter voltage T J = 25 C to 150 C 1200 GES GEM max. DC gate voltage max. traient collector gate voltage continuous traient I C25 collector current T C = 25 C I C80 T C = 80 C P tot total power dissipation T C = 25 C 225 W CE(sat) collector emitter saturation voltage I C = 25 ; GE = 15 T J = 25 C T J = 125 C ±20 ± GE(th) gate emitter threshold voltage I C = 1 m; GE = CE T J = 25 C I CES collector emitter leakage current CE = CES ; GE = 0 T J = 25 C T J = 125 C 2 2 m m I GES gate emitter leakage current CE = 0 ; GE = ± n C ies input capacitance CE = 25 ; GE = 0 ; f = 1 MHz 150 pf Q G(on) total gate charge CE = 00 ; GE = 15 ; I C = nc t d(on) t r t d(off) t f E on E off turnon delay time current rise time turnoff delay time current fall time turnon energy per pulse turnoff energy per pulse inductive load T J = 125 C CE = 00 ; I C = 25 GE = ±15 ; R G = 47 Ω I CM reverse bias safe operating area RBSO; GE = ±15 ; R G = 47 Ω L = 100 µh; clamped induct. load T J = 125 C CEmax = CES L S di/dt t SC (SCSO) short circuit safe operating area CE = CES ; GE = ±15 ; T J = 125 C R G = 47 Ω; nonrepetitive mj mj µs R thjc thermal resistance junction to case (per IGBT) 0.55 K/W Diodes RRM max. repetitve reverse voltage T J = 150 C 1200 I F25 forward current T C = 25 C I F80 T C = 80 C F forward voltage I F = 25 ; GE = 0 T J = 25 C T J = 125 C I RM t rr E rec(off) max. reverse recovery current reverse recovery time reverse recovery energy R = 00 di F /dt = 400 /µs T J = 125 C I F = 25 ; GE = R thjc thermal resistance junction to case (per diode) 1.19 K/W T C = 25 C unless otherwise stated mj 2017 IXYS ll rights reserved 2
3 MWI 25127(T) Module T J T JM T stg operating temperature max. virtual junction temperature storage temperature ISOL isolation voltage I ISOL < 1 m; 50/0 Hz 2500 ~ M d mounting torque (M4) Nm d S d creep distance on surface strike distance through air Weight 180 g R thch thermal resistance case to heatsink with heatsink compound 0.02 K/W C C C mm mm Temperature Seor NTC R 25 resistance T C = 25 C B 25/ kω K Equivalent Circuits for Simulation I 0 R 0 0 R 0 0 R 0 R 1 R 2 C 1 C 2 IGBT Diode R1 R2 R3 R4 C1 C2 C3 C4 T1 T T J = 125 C D1 D T J = 125 C n t Zth( t) = R i 1 exp Ä i i= 1 Ä i = R i C i IGBT Diode mω mω 2017 IXYS ll rights reserved 3
4 MWI 25127(T) Outline Drawing Dimeio in mm (1 mm = ) 0.8 ± ±1 1.2 ±0.05 Ø ±0.05 Ø Ø 2.5 Ø ±0.3 Ø 0.4 B Product Marking Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MWI MWI15127 Box Standard MWI 15127T MWI15127T Box IXYS ll rights reserved 4
5 MWI 25127(T) Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. trafer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. Typ. turn off characteristics of free wheeling diode 2017 IXYS ll rights reserved 5
6 MWI 25127(T) Fig. 7 Typ. turn on energy and switching times versus collector current Fig. 8 Typ. turn off energy and switching times versus collector current Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. traient thermal impedance 2017 IXYS ll rights reserved
IGBT Module Sixpack MWI 15-12A7. I C25 = 30 A V CES = 1200 V V CE(sat) typ. = 2.0 V. Short Circuit SOA Capability Square RBSOA
MWI 15127 IGBT Module Sixpack Short Circuit SO Capability Square RBSO I C25 = 30 CES = 1200 CE(sat) typ. = 2.0 Part name (Marking on product) MWI15127 13 1 5 9 2 10 1 15 14 E72873 Pin confi guration see
More informationIGBT XPT Module H Bridge
IGBT XPT Module H Bridge Preliminary data CES = 12 25 = 85 CE(sat) = 1.8 Part name (Marking on product) MIX 61H12ED 13 1 T1 D1 9 T5 D5 2 1 16 E72873 14 3 T2 D2 11 T6 D6 4 12 17 Features: Easy paralleling
More informationIGBT Module H Bridge MIEB 101H1200EH. = 1200 V = 183 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIEB101H1200EH
MIEB 11HEH IGBT Module H Bridge S 25 = = 183 (sat) = 1.8 Part name (Marking on product) MIEB11HEH 13, 21 1 T1 D1 9 T2 D2 2 1 19 E72873 3 T3 D3 11 T D 1, 2 Features: SPT + IGBT technology low saturation
More informationApplications: AC motor drives Solar inverter Air-conditioning systems high power converters UPS
IGBT Module MITH300PF1200LP CES I C25 CE(sat) = 1200 = 420 = 1.85 Phase leg Part number MITH300PF1200LP Features / dvantages: Trench IGBT - low CE(sat) - easy paralleling due to the positive temperature
More informationPower MOSFET Stage for Boost Converters
UM 33-6PH Power MOSFET Stage for Boost Converters Module for Power Factor Correction Single Phase Boost Diode MOSFET Rectifier RRM = 16 RRM = 6 S = 6 = 16 I F25 = 6 25 = I FSM = 3 F (3) = 2.24 R DS(on)
More informationSymbol Parameter/Test Conditions Values. 200 P tot Power Dissipation Per IGBT T C =25, T Jmax = Symbol Parameter/Test Conditions Values
MMG1W6X6EN 6 1 Six-Pack Module February 17 ersion 1 RoHS Compliant PRODUCT FETURES IGBT 3 Chip(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current Low saturation
More informationSymbol Parameter/Test Conditions Values Unit T C = T C =95 450
17 A IGBT Module May 215 ersion 1 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(17 Trench+Field Stop technology) Low turn-off losses, short tail current CE(sat) with positive temperature coefficient DIODE
More informationFeatures / Advantages: Applications: Package: SMPD
XP GB x 100 CES 8 C CE(sat) 1.8 SOPLUS Surface Mount Power Device Phase leg SCR / GB Part number 1 9 Backside: isolated E36641 3 6 7 4 8 Features / dvantages: pplications: Package: SMPD XP GB - low saturation
More informationSKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant
SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast
More information1200 V 600 A IGBT Module
1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and
More information1200V 50A IGBT Module
12V 5A MG125W-XBN2MM RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching
More informationSymbol Parameters Test Conditions Min Typ Max Unit T J max) Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
12V 15A IGBT Module MG1215W-XN2MM RoHS Features High level of integration IGBT 3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short
More informationI CM Repetitive Peak Collector Current tp=1ms. 150 P tot T J = I 2 t. A 2 J =125, t=10ms, V R =0V
MMGTU7QCH6C 7 IGBT Module July ersion RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current
More informationHigh Power Rugged Type IGBT Module
ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These
More informationT C =25 75 T C = Symbol Parameter/Test Conditions Values Unit
MMGTUSB6C IGBT Module February ersion RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and short tail current
More informationIGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/10A PIM in one-package. General Description. Features. Typical Applications
STRPOWER SEMICONDUCTOR TM IGBT GD10PJK120L1S Preliminary Molding Type Module 1200/10 PIM in one-package General Description STRPOWER IGBT Power Module provides ultra low conduction and switching loss as
More informationSymbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
V 15A Module RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short
More informationMTP IGBT Power Module Primary Dual Forward
MTP IGBT Power Module Primary Dual Forward VS5MTWDF MTP (Package example) PRIMARY CHARACTERISTICS IGBT, T J = 5 C V CES V V CE(on) at 25 C at 8 A 2. V I C at 8 C 9 A FRED Pt AP DIODE, T J = 5 C V RRM V
More informationV CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875
APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = 875A @ Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4
More informationPrimary MTP IGBT Power Module
Primary MTP IGBT Power Module MTP PRIMARY CHARACTERISTICS FRED Pt AP DIODE, T J = 5 C V RRM 6 V I F(DC) at C A V F at 25 C at 6 A 2.8 V IGBT, T J = 5 C V CES 6 V V CE(on) at 25 C at 6 A.98 V I C at C 83
More informationSymbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd
2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter
More informationMMG50S120B6UC. 1200V 50A IGBT Module. Preliminary PRODUCT FEATURES APPLICATIONS
December 28 Preliminary MMG5S2B6UC 2 5 IGBT Module RoHS Compliant PRODUCT FETURES IGBT chip in trench FS-technology Low switching losses CE(sat) with positive temperature coefficient Fast switching and
More informationSymbol Parameter/Test Conditions Values. T C =25, T Jmax = T C =95, T Jmax =
MMG15WB17H6EN 17 15 Four-Pack Module February 216 ersion 1 RoHS Compliant PRODUCT FETURES IGBT3 CHIP(17 Trench+Field Stop technology) Low turn-off losses, short tail current CE(sat) with positive temperature
More informationSymbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
12V 3A Module RoHS Features 3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft
More informationIGBT with Diode IXSN 52N60AU1 V CES
IGBT with Diode IXSN 5NAU S = V 5 = 8 A Combi Pack (sat) = V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings S = 5 C to 5 C V V CGR = 5 C to 5 C; E = MW A S Continuous ± V M Transient
More informationIGBT ECONO3 Module, 150 A
IGBT ECONO3 Module, 5 A VS-GB5YG2NT ECONO3 4 pack FEATURES Gen 5 non punch through (NPT) technology μs short circuit capability Square RBSOA HEXFRED low Q rr, low switching energy Positive temperature
More informationMG12300D-BN2MM Series 300A Dual IGBT
Series 300A Dual IGBT RoHS Features High short circuit capability,self limiting short circuit current IGBT 3 CHIP(Trench+Field Stop technology) (sat) with positive temperature coefficient Fast switching
More informationMTI 120W55GA / MTI 120W55GC
GWM 16-55X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package S = 55 V 25 = 15 R DSon typ. = 2.7 mw L+ G1 G3 G5 S1 G2 S3 G4 S5 G6 L1 L2 L3 Straight leads Surface Mount Device
More informationACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet ACEPACK 2 sixpack topology, 12, 75 A trench gate field-stop IGBT M series, soft diode and NTC Features ACEPACK 2 ACEPACK 2 power module DBC Cu Al 2 O 3 Cu Sixpack topology 12, 75 A IGBTs and
More informationDIM400PBM17-A000. IGBT Bi-Directional Switch Module DIM400PBM17-A000 ±1700V V T FEATURES KEY PARAMETERS V DRM. (typ) 4.9V I C. (max) 400A I C(PK)
DIMPBM17 DIMPBM17 IGBT BiDirectional Switch Module DS55242.3 June 8 (LN26123) FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon KEY PRMETERS DRM ±17 T (typ)
More informationFeatures TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
More informationIGBT STARPOWER GD400SGK120C2S. Absolute Maximum Ratings T C =25 unless otherwise noted SEMICONDUCTOR TM. Molding Type Module
STARPOWER SEMICONDUCTOR TM IGBT GD400SGK120C2S Molding Type Module 1200V/400A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as
More informationwith Diode ISOPLUS247 TM = 600 V = 45 A = 2.7 V = 55 ns V CE(SAT) t fi(typ) (Electrically Isolated Backside) Preliminary data sheet
HiPerFAST TM IGBT IXGR 3N6CD S = 6 V with Diode 5 = 5 A ISOPLUS7 TM (SAT) =.7 V t fi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings S to 5 C
More informationFull Bridge IGBT MTP (Ultrafast NPT IGBT), 20 A
VSMTUFAPbF Full Bridge IGBT MTP (Ultrafast NPT IGBT), A FEATURES Ultrafast non punch through (NPT) technology Positive V CE(on) temperature coefficient μs short circuit capability HEXFRED antiparallel
More informationReplaces March 2002, version DS DS July 2002
DIM24ESM17 DIM24ESM17 Single Switch IGBT Module Replaces March 22, version DS54473. DS54474.1 July 22 FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated
More informationIGBT STARPOWER SEMICONDUCTOR TM. Molding Type Module. 1200V/225A 6 in one-package. General Description. Features. Typical Applications
STARPOWER SEMICONDUCTOR TM IGBT GD225HTL120C7S Preliminary Molding Type Module 1200V/225A 6 in one-package General Description STARPOWER IGBT power module provides ultra low conduction loss as well as
More informationThree phase full Bridge with Trench MOSFETs in DCB-isolated high-current package
MTI85W1GC Three phase full Bridge with Trench MOSFETs in DCB-isolated high-current package S = 1 V 25 = 12 R DSon typ. = 3.2 mw Part number MTI85W1GC L+ G1 G3 G5 Surface Mount Device S1 S3 S5 L1 L2 L3
More informationV (4TYP) U (5TYP) V 0.28 Dia. 7.0 Dia.
QIC68 Preliminary Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 697 (724) 9-7272 www.pwrx.com Dual Common Emitter HVIGBT Module 8 Amperes/6 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E
More informationHalf Bridge IGBT MTP (Warp Speed IGBT), 114 A
Half Bridge IGBT MTP (Warp Speed IGBT), 4 A MTP PRIMARY CHARACTERISTICS V CES 6 V V CE(on) typical at V GE = 5 V 2.3 V I C at T C = 25 C 4 A Speed 3 khz to khz Package MTP Circuit configuration Half bridge
More informationSymbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 175 C T J op. Operating Temperature C T stg
6V 6A Module MG66WB-BN4MM RoHS Features High short circuit capability, self limiting short circuit current (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling
More informationReplaces December 2003 version, issue FDS FDS February (E 2 ) 6(G 2 )
DIMWLS1 DIMWLS1 IGBT Chopper Module Lower rm Control Replaces December 3 version, issue FDS56971.1 FDS56972. February 4 FETURES 1µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate
More informationEMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A
EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 5 A VS-ETF5Y5N EMIPAK-B (package example) PRIMARY CHARACTERISTICS Q to Q IGBT V CES 5 V V CE(on) typical at I C = 5 A.7 V I C at T C =
More informationHiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode IXGH 2N6BU S = 6 V 25 = 6 A (sat) = 2. V t fi = 8 ns Symbol Test Conditions Maximum Ratings S to 5 C 6 V V CGR to 5 C; R GE = MΩ 6 V S Continuous ±2 V M Transient ± V 25 6
More informationEMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 75 A
EMIPAK B PressFit Power Module -Levels Half Bridge Inverter Stage, 75 A VS-ETF75Y6U EMIPAK B (package example) PRIMARY CHARACTERISTICS Q - Q IGBT STAGE V CES 6 V V CE(on) typical at I C = 75 A.7 V I C
More informationIGBT ECONO3 Module, 100 A
IGBT ECONO3 Module, A VS-GBYGNT ECONO 3 4 pack PRIMARY CHARACTERISTICS V CES V V CE(on) typ. at A 3.52 V I C(DC) at T C = 64 C A Package ECONO 3 Circuit configuration 4 pack with thermistor FEATURES Gen
More informationSymbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
V 2A Module MG2D-BN2MM RoHS Features High short circuit capability, self limiting short circuit current 3 CHIP(Trench+Field Stop technology) (sat) with positive temperature coefficient Fast switching and
More informationDual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 300 A
VS-GT3FD6N Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 3 A FEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 100 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), A SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC A at 8 C V CE(on) typical at A, 5 C.93 V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single
More informationIKW40T120. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Best in class TO247 Short circuit withstand time 10µs Designed for : Frequency Converters Uninterrupted
More informationItem Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LUHG121_Preliminary LUHG121Z*_Preliminary SEPT. 29 SUSPM TM 12V A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching
More informationEMIPAK-2B PressFit Power Module 3-Levels Half-Bridge Inverter Stage, 150 A
EMIPAK-B PressFit Power Module -Levels Half-Bridge Inverter Stage, 5 A VS-ETF5Y65U EMIPAK-B (package example) PRODUCT SUMMARY Q - Q IGBT STAGE V CES 65 V V CE(ON) typical at I C = A.7 V Q - Q IGBT STAGE
More informationSUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.
SEPT. 9 LUH75G121_Preliminary LUH75G121Z*_Preliminary SUSPM TM 1V 75A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast
More informationSiC Schottky Diode DCG20C1200HR. Ultra fast switching Zero reverse recovery Common Cathode. V RRM = 1200 V I FAV = 2x 12.5 A.
DCG2C12HR SiC Schottky Diode RRM = 12 I F = 2x 12.5 Ultra fast switching Zero reverse recovery Common Cathode Part number DCG2C12HR Backside: isolated E72873 1 2 3 Features / dvantages: Ultra fast switching
More informationUltra Fast NPT - IGBT
APT4GR2B2D3 2V, 4A, (on) = 2.V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers
More informationIXBX25N250 = 2500V = 25A 3.3V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor. Symbol Test Conditions Maximum Ratings
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBX25N25 V CES 9 = 25V = 25A V CE(sat) 3.3V Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 25 V V CGR = 25 C to 15 C,
More informationQID Dual IGBT HVIGBT Module 85 Amperes/6500 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT HVIGBT Module Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection
More informationTrenchStop Series. Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Approx. 1.0V reduced V CE(sat) and 0.5V reduced V F compared to BUP314D Short circuit withstand
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 180 A
Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C(DC) 85 A at 9 C V CE(on) typical at A, 5 C.55 V I F(DC) 3 A at 9 C Speed 8 khz to 3 khz Package
More informationTrenchStop Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Very low V CE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9DAU SOT-7 PRODUCT SUMMARY V CES V I C DC 9 A at 9 C V CE(on) typical at 75 A, 5 C 3.3 V Speed 8 khz to 3 khz Package SOT-7 Circuit Single switch
More informationFGL60N100BNTD 1000 V, 60 A NPT Trench IGBT
FGLNBNTD V, A NPT Trench IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) =.5 V @ = A High Input Impedance Built-in Fast Recovery Diode Applications UPS, Welder General Description
More informationMolding Type Module IGBT, Chopper in 1 Package, 1200 V and 300 A
Molding Type Module IGBT, Chopper in 1 Package, 12 V and 3 A VS-GB3NH12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 3 A, 25 C Speed Package Circuit configuration Dual INT-A-PAK
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 80 A
Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC 8 A at 4 C V CE(on) typical at 8 A, 5 C. V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration
More informationEMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A
EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 3 A VS-ENQ3L1S EMIPAK-1B (package example) PRODUCT SUMMARY TRENCH IGBT 1 V STAGE V CES 1 V V CE(ON) typical at I C = 3 A 2.12 V I C at T C
More informationData Sheet GHIS040A060S A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =600V I C = 40A @T C = 100 0 C Features Field StopTrench Fast IGBT Low voltage drop Low tail current Switching frequency up to 50 khz Low leakage
More informationReplaces June 2002, version DS DS November 2002
DIMPHM33 DIMPHM33 Half Bridge IGBT Module Replaces June 2, version DS54646.1 DS54646.2 November 2 FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated
More informationMolding Type Module IGBT, 2-in-1 Package, 1200 V and 300 A
Molding Type Module IGBT, 2-in-1 Package, 12 V and 3 A VS-GB3TH12N Double INT-A-PAK FEATURES 1 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 15
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 650 V, 120 A
Insulated Gate Bipolar Transistor (Trench IGBT), 65 V, A VS-GTDA65U SOT-7 PRIMARY CHARACTERISTICS V CES 65 V I C DC A at 9 C V CE(on) typical at A, 5 C.7 V I F DC 76 A at 9 C Speed 8 khz to 3 khz Package
More informationSymbol Description GD200CLT120C2S Units V CES Collector-Emitter Voltage 1200 V V GES Gate-Emitter Voltage ±20V V
STARPOWER SEMICONDUCTOR TM IGBT Preliminary Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.
More informationReplaces September 2001, version DS DS March 2002
DIMDDM17 DIMDDM17 Dual Switch IGBT Module Replaces September 1, version DS54492.3 DS54493. March 2 FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated
More informationIGBT STARPOWER GD75HFU120C1S SEMICONDUCTOR TM. Molding Type Module. 1200V/75A 2 in one-package. General Description. Features. Typical Applications
STARPOWER SEMICONDUCTOR TM IGBT GD75HFU120C1S Molding Type Module 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit
More informationIHW15T120. Soft Switching Series. Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery antiparallel EmCon HE diode Short circuit withstand time 10µs Designed for : Soft Switching Applications Induction
More informationMG06400D-BN4MM Series 400A Dual IGBT
V Family MGD-BNMM Series A Dual RoHS Features High short circuit capability,self limiting short circuit current (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling
More informationIGB03N120H2. HighSpeed 2-Technology. Power Semiconductors 1 Rev. 2.4 Oct. 07
HighSpeed 2-Technology Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners 2 nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant
More informationLow Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 7 A VS-GB75LA6UF FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 5 khz Square RBSOA SOT-227
More informationData Sheet GHIS030A120S-A2
Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =1200V I C = 30A @T C = 100 0 C E A G C Features Field StopTrench Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50
More informationInsulated Gate Bipolar Transistor (Trench IGBT), 140 A
Insulated Gate Bipolar Transistor (Trench IGBT), 4 A VS-GT4DA6U PRODUCT SUMMARY SOT-7 V CES 6 V I C DC 4 A at 9 C () V CE(on) typical at A, 5 C.7 V I F DC 7 A at 9 C Speed 8 khz to 3 khz Package SOT-7
More informationS R V U T DETAIL "A" AF AE E1C2 (33) E1C2 (32) Dimensions Inches Millimeters
CM6DXL-24S Powerex, Inc., 73 Pavilion Lane, Youngwood, Pennsylvania 5697 (724) 925-7272 www.pwrx.com Dual IGBTMOD NX-S Series Module D AC K E AB L F R Y Z AA Z AD G H C() C(2) E2(3) E2(4) A B C J K L D
More information600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G*
G C E TYPICAL PERFORMANCE CURVES APT7GNB_SDQ(G) V APT7GNBDQ APT7GNSDQ APT7GNBDQG* APT7GNSDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies,
More information5SND 0500N HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 433-2-23 5SND 5N333 HiPak IGBT Module V CE = 33 V I C = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
More informationMPMD100B120RH NPT & Rugged Type 1200V IGBT Module. Features. conditioning. Applications. total losses. Equivalent Circuit 7DM-3. Welding Machine, UPS
General Description MagnaChip s IGBT Module 7DM3 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationFeatures / Advantages: Applications: Package: TO-240AA
MCM4P6 hyristor Module RRM 2x 6 4.28 Phase leg Part number MCM4P6 Backside: isolated 3 2 6 7 5 4 Features / dvantages: pplications: Package: O-24 hyristor for line frequency Planar passivated chip Long-term
More informationDIM375WLS06-S000. IGBT Chopper Module (Lower Arm Control) DIM375WLS06-S000 FEATURES KEY PARAMETERS V CES. 600V V CE(sat) * (typ) 2.
DIM375WLS6S DIM375WLS6S IGBT Chopper Module (Lower rm Control) DS57331. February 4 FETURES Low Forward oltage Drop Isolated Copper Baseplate PPLICTIONS Choppers Motor Controllers KEY PRMETERS CES 6 CE(sat)
More informationSonic Fast Recovery Diode
DH2x6-18A Sonic Fast Recovery Diode RRM = 18 I FA = 2x 6 A t = 23 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DH2x6-18A Backside: Isolated 2 1 3
More informationFeatures / Advantages: Applications: Package: TO-240AA
MCMP6 hyristor Module RRM 2x 6.2 Phase leg Part number MCMP6 Backside: isolated 3 2 6 7 5 4 Features / dvantages: pplications: Package: O-24 hyristor for line frequency Planar passivated chip Long-term
More informationSTGW25H120DF2, STGWA25H120DF2
STGW25H120DF2, STGWA25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features Datasheet - production data Maximum junction temperature: T J = 175 C High speed switching series Minimized
More informationInsulated Gate Bi-Polar Transistor Type T1600GB45G
Date:- 1 Nov, 214 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V CES Collector emitter voltage 45 V V DC link Permanent DC voltage
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC
AOTB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More information= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 500µA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)
V The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior
More informationInsulated Gate Bipolar Transistor (Ultrafast IGBT), 90 A
Insulated Gate Bipolar Transistor (Ultrafast IGBT), 9 A VS-GB9SAU SOT-7 PRODUCT SUMMARY V CES V V CE(on) typical at 75 A, 5 C. V I C DC 9 A at 9 C Speed 8 khz to khz Package SOT-7 Circuit Single Switch
More informationFeatures. Applications. Characteristics Symbol Rating Unit. T C=25 o C I C. T C=80 o C 100 A. Operating Junction Temperature Tj -55~150
General Description MagnaChip s IGBT Module 7DM-1 package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationMPMC100B120RH NPT & Rugged Type 1200V IGBT Module
General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are
More informationInsulated Gate Bipolar Transistor Ultralow V CE(on), 250 A
Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT-7 600 V.33 V 50 A DC to khz SOT-7
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTFB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More informationDual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 300 A
Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 3 A VS-GA3TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS
More informationSTGW40S120DF3, STGWA40S120DF3
STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Features Datasheet - production data Figure 1. Internal schematic diagram 10 µs of short-circuit withstand time
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOD5B5N 5V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 5V breakdown voltage Very low turn-off switching loss with softness
More informationItem Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LVHG121_Preliminary LVHG121Z*_Preliminary Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes
More informationDIM1800ESS12-A000. Single Switch IGBT Module DIM1800ESS12-A000 FEATURES KEY PARAMETERS V CES
Single Switch IGBT Module Replaces DS5857-2 DS5857-3 August 2014 (LN31868) FEATURES 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Cu Base with Al 2 O 3 Substrates Lead Free cotruction
More informationItem Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current
7MBRS6 IGBT Modules IGBT MODULE (S series) 6 / / PIM Features Low CE(sat) Compact package P.C. board mount Converter diode bridge, Dynamic brake circuit pplications Inverter for motor drive C and DC servo
More information