with Diode ISOPLUS247 TM = 600 V = 45 A = 2.7 V = 55 ns V CE(SAT) t fi(typ) (Electrically Isolated Backside) Preliminary data sheet

Transcription

1 HiPerFAST TM IGBT IXGR 3N6CD S = 6 V with Diode 5 = 5 A ISOPLUS7 TM (SAT) =.7 V t fi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings S to 5 C 6 V V CGR to 5 C; E = MΩ 6 V S Continuous ± V M Transient ±3 V 5 5 A 9 = 9 C 8 A M, ms A SSOA = 5 V,, = Ω M = 6 A (RBSOA) Clamped inductive load, L = S P C W C M 5 C T stg C Maximum Lead and Tab temperature for soldering 3 C.6 mm (.6 in.) from case for s V ISOL 5/6 Hz, RMS t = min leads-to housing 5 V~ Weight 5 g ISOPLUS 7 TM (IXGR) E 533 G = Gate, E = Emitter, Features G C E * Patent pending Isolated backside* C = Collector, TAB = Collector DCB Isolated mounting tab Meets TO-7AD package Outline High current handling capability Latest generation HDMOS TM process MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (, unless otherwise specified) min. typ. max. (th) = 5 µa, =.5 5. V ES = 6V µa = V 3 ma I GES = V, = ± V ± na (sat), = 5 V.3.7 V Note Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density Very fast switching speeds for high frequency applications IXYS All rights reserved DS9863D(6/)

2 IXGR 3N6CD Symbol Test Conditions Characteristic Values (, unless otherwise specified) min. typ. max. g fs ; = V, 5 S Pulse test, t 3 µs, duty cycle % C ies 7 pf C oes = 5 V, = V, f = MHz pf C res 5 pf Q g nc Q ge, = 5 V, =.5 S nc Q gc nc t d(on) Inductive load, t I ri C, = 5 V, L = µh, ns V t CE =.8 S, = R off =.7 Ω d(off) 85 7 ns Remarks: Switching times may t fi 55 ns increase for (Clamp) >.8 S, E off higher or increased.3.75 mj t d(on) Inductive load, t ri, = 5 V, L = µh E on mj =.8 S, = R off =.7 Ω t d(off) ns Remarks: Switching times may t fi increase for (Clamp) >.8 S, ns E off higher or increased.85 mj R thjc.9 K/W R thck.5 K/W ISOPLUS 7 OUTLINE Gate, Drain (Collector) 3 Source (Emitter) no connection Dim. Millimeter Inches Min. Max. Min. Max. A A A b b b C D E e 5.5 BSC.5 BSC L L Q R Reverse Diode (FRED) Characteristic Values (, unless otherwise specified) Symbol Test Conditions min. typ. max. V F, = V, Pulse test = 5 C.6 V t 3 µs, duty cycle d %.5 V, = V, -di F = A/µs 6 A t rr = V = C ns = A; -di = A/µs; = 3 V.5 K/W R thjc Note:. I T = 3A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by,835,59,93,8 5,9,96 5,37,8 6,6,665 6,,65 B 6,683,3 6,77,585 one or moreof the following U.S. patents:,85,7 5,7,58 5,63,37 5,38,5 6,59,3 B 6,53,33 6,7,5B,88,6 5,3,796 5,87,7 5,86,75 6,36,78 B 6,583,55 6,7,63

3 IXGR 3N6CD 8 = 3V V 6 = 3V V Fig.. Output Characteristics Fig.. Extended Output Characteristics 8 6 = 3V V (sat) - Normalized = = 6A = 3A = 6A Degrees C Fig. 3. High Temperature Output Characteristics Fig.. Temperature Dependence of (sat) 8 = V C iss f = Mhz 6 Capacitance - pf C oss C rss Volts Fig. 5. Admittance Curves Fig. 6. Capacitance Curves IXYS All rights reserved

4 IXGR 3N6CD - millijoules. = Ω E(OFF) - millijoules Ohms Fig. 7. Dependence of E ON and E OFF on. Fig. 8. Dependence of E ON and E OFF on. - millijoules 3 = 6A = 3A = 6A 8 6 E(OFF) - millijoules 6 8 I = 3A C V = 3V CE 6 =.7Ω dv < /ns Q g - nanocoulombs Fig. 9. Gate Charge Fig.. Turn-off Safe Operating Area D=.5 Z thjc (K/W).. D=. D=. D=.5 D=. D=. D = Duty Cycle Single pulse Pulse Width - Seconds Fig.. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions.

5 IXGR 3N6CD IF 6 A 5 3 =5 C = C =5 C Q r nc 8 6 = C = 3V = 6A = 3A = 5A 3 A = C = 3V = 6A = 3A = 5A 3 V A/µs 6 A/µs 8 V F -di F -di F Fig.. Forward current versus V F Fig. 3. Reverse recovery charge Q r Fig.. Peak reverse current K f..5 t rr 9 ns 8 = C = 3V V FR V 5 = C = 3A t fr V FR. µs t fr.75. = 6A = 3A = 5A Q r. 8 C A/µs 8 -di F. 6 A/µs 8 di F Fig. 5. Dynamic parameters Q r, Fig. 6. Recovery time t rr Fig. 7. Peak forward voltage V FR and t fr versus versus di F K/W Z thjc. Constants for Z thjc calculation: i R thi (K/W) t i (s) DSEP x3-6b s t Fig. 8. Transient thermal resistance junction to case IXYS All rights reserved