Package. TAB Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 22 V GS = 15 V, T C = 100 C.

Size: px
Start display at page:

Download "Package. TAB Drain. Symbol Parameter Value Unit Test Conditions Note. V GS = 15 V, T C = 25 C Fig. 19 A 22 V GS = 15 V, T C = 100 C."

Transcription

1 C3M659J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode V DS I 25 C R DS(on) 9 V 35 A 65 mω Features New C3M SiC MOSFET technology New low impedance package with driver source pin High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (6pF) Halogen free, RoHS compliant Wide creepage (~7mm) between drain and source Benefits Reduce switching losses and minimize gate ringing Higher system efficiency Increase power density Increase system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Package TAB Drain G DS S S S S S Part Number Gate (Pin 1) C3M659J Driver Source (Pin 2) Drain (TAB) Power Source (Pin 3,4,5,6,7) Package TO Maximum Ratings (T C = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note V DSmax Drain - Source Voltage 9 V V GS = V, I D = 1 μa V GSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note. 1 V GSop Gate - Source Voltage (static) -4/+15 V Static Note. 2 I D Continuous Drain Current 35, T C = 25 C Fig. 19 A 22, T C = 1 C I D(pulse) Pulsed Drain Current 9 A Pulse width t P limited by T jmax Fig. 22 E AS Avalanche energy, Single pulse 11 mj I D = 22A, V DD = 5V P D Power Dissipation 113 W T C =25 C, T J = 15 C Fig. 2 T J, T stg Operating Junction and Storage Temperature -55 to +15 C T L Solder Temperature 26 C 1.6mm (.63 ) from case for 1s Note (1): When using MOSFET Body Diode V GSmax = -4V/+19V Note (2): MOSFET can also safely operate at /+15 V 1 C3M659J Rev. C, 1-218

2 Electrical Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V (BR)DSS Drain-Source Breakdown Voltage 9 V V GS = V, I D = 1 μa V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 5 ma 1.6 V V DS = V GS, I D = 5 ma, T J = 15ºC I DSS Zero Gate Voltage Drain Current 1 1 μa V DS = 9 V, V GS = V I GSS Gate-Source Leakage Current 1 25 na, V DS = V R DS(on) g fs Drain-Source On-State Resistance Transconductance Fig , I D = 2 A Fig. 4, mω 9, I D = 2A, T J = 15ºC 5, V DS= 15 V, I DS= 2 A S 11.6 V DS= 15 V, I DS= 2 A, T J = 15ºC C iss Input Capacitance 66 pf V GS = V, V DS = 6 V Fig. 17, C oss Output Capacitance 6 18 f = 1 MHz C rss Reverse Transfer Capacitance 4. VAC = 25 mv E oss C oss Stored Energy 16 μj Fig. 16 Fig. 7 E ON Turn-On Switching Energy (Body Diode FWD) 39 E OFF Turn Off Switching Energy (Body Diode FWD) 17 μj V DS = 4 V, V GS = -4 V/15 V, I D = 2A, R G(ext) = 2.5Ω, L= 77 μh, T J = 15ºC Fig. 26, 3 Note. 3 t d(on) Turn-On Delay Time 9 t r Rise Time 1 t d(off) Turn-Off Delay Time 16 t f Fall Time 6 ns V DD = 4 V, V GS = -4 V/15 V I D = 2 A, R G(ext) = 2.5 Ω, Timing relative to V DS Inductive load R G(int) Internal Gate Resistance 4.7 Ω f = 1 MHz, V AC = 25 mv Q gs Gate to Source Charge 7.5 Q gd Gate to Drain Charge 12 Q g Total Gate Charge 3.4 nc V DS = 4 V, V GS = -4 V/15 V I D = 2 A Per IEC pg 21 Fig. 27 Fig. 12 Reverse Diode Characteristics (T C = 25 C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note V SD Diode Forward Voltage 4.8 V V GS = -4 V, I SD = 1 A 4.4 V V GS = -4 V, I SD = 1 A, T J = 15 C Fig. 8, 9, 1 I S Continuous Diode Forward Current 22 A V GS = -4 V Note 1 I S, pulse Diode pulse Current 9 A V GS = -4 V, pulse width t P limited by T jmax Note 1 t rr Reverse Recovery time 12 ns Q rr Reverse Recovery Charge 245 nc I rrm Peak Reverse Recovery Current 29 A Thermal Characteristics V GS = -4 V, I SD = 2 A, V R = 5 V dif/dt = 41 A/µs, T J = 15 C Note 1 Symbol Parameter Max. Unit Test Conditions Note R θjc Thermal Resistance from Junction to Case 1.1 R θja Thermal Resistance From Junction to Ambient 4 C/W Fig. 21 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M659J Rev. C, 1-218

3 Typical Performance 8 7 T J = -55 C tp < 2 µs V GS = 13 V 8 7 tp < 2 µs V GS = 13 V V GS = 11 V V GS = 9 V V GS = 11 V V GS = 9 V V GS = 7 V 1 V GS = 7 V Figure 1. Output Characteristics T J = -55 ºC Figure 2. Output Characteristics T J = 25 ºC T J = 15 C tp < 2 µs V GS = 13 V V GS = 11 V V GS = 9 V V GS = 7 V On Resistance, R DS On (P.U.) I DS = 2 A t p < 2 µs Junction Temperature, T J ( C) Figure 3. Output Characteristics T J = 15 ºC Figure 4. Normalized On-Resistance vs. Temperature 12 1 t p < 2 µs T J = 15 C I DS = 2 A t p < 2 µs On Resistance, R DS On (Ohms) T J = -55 C On Resistance, R DS On (mohms) V GS = 13 V V GS = 11 V Figure 5. On-Resistance vs. Drain Current For Various Temperatures Junction Temperature, T J ( C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 3 C3M659J Rev. C, 1-218

4 Typical Performance V DS = 2 V tp < 2 µs T J = 15 C T J = -55 C V GS = -4 V V GS = V V GS = -2 V Gate-Source Voltage, V GS (V) T J = -55 C t p < 2 µs -7-8 Figure 7. Transfer Characteristic for Various Junction Temperatures Figure 8. Body Diode Characteristic at -55 ºC V GS = -4 V V GS = -2 V V GS = V V GS = -4 V V GS = -2 V V GS = V T J = 25 C t p < 2 µs -7-8 T J = 15 C t p < 2 µs -7-8 Figure 9. Body Diode Characteristic at 25 ºC Figure 1. Body Diode Characteristic at 15 ºC Threshold Voltage, V th (V) Conditons V GS = V DS I DS = 5 ma Gate-Source Voltage, V GS (V) I DS = 2 A I GS = 1 ma V DS = 4 V Junction Temperature T J ( C) Gate Charge, Q G (nc) Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics 4 C3M659J Rev. C, 1-218

5 Typical Performance V GS = V V GS = 5 V V GS = 1 V V GS = V V GS = 5 V V GS = 1 V T J = -55 C t p < 2 µs -7-8 t p < 2 µs -7-8 Figure 13. 3rd Quadrant Characteristic at -55 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC V GS = V V GS = 5 V V GS = 1 V Stored Energy, E OSS (µj) T J = 15 C t p < 2 µs Drain to Source Voltage, V DS (V) Figure 15. 3rd Quadrant Characteristic at 15 ºC Figure 16. Output Capacitor Stored Energy 1 1 C iss V AC = 25 mv f = 1 MHz 1 1 C iss V AC = 25 mv f = 1 MHz Capacitance (pf) 1 C oss Capacitance (pf) 1 C oss 1 C rss 1 C rss Figure 17. Capacitances vs. Drain-Source Voltage ( - 2V) Figure 18. Capacitances vs. Drain-Source Voltage ( - 9V) 5 C3M659J Rev. C, 1-218

6 Typical Performance Drain-Source Continous Current, I DS (DC) (A) T J 15 C Maximum Dissipated Power, P tot (W) T J 15 C Case Temperature, T C ( C) Figure 19. Continuous Drain Current Derating vs. Case Temperature Case Temperature, T C ( C) Figure 2. Maximum Power Dissipation Derating vs. Case Temperature 1. Junction To Case Impedance, Z thjc ( o C/W) 1 1E SinglePulse 1E-3 1E-6 1E-6 1E-6 1E-3 1E-3 1E-3 1 Time, t p (s) Limited by R DS On 1 ms 1 µs T C = 25 C D =, Parameter: t p ms 1 µs Figure 21. Transient Thermal Impedance (Junction - Case) Figure 22. Safe Operating Area V DD = 6 V R G(ext) = 2.5 Ω V GS = -4V/+15 V FWD = C3M659J L = 77 μh E Total V DD = 4 V R G(ext) = 2.5 Ω V GS = -4V/+15 V FWD = C3M659J L = 77 μh E Total Switching Loss (uj) 15 1 E On Switching Loss (uj) 75 5 E On E Off 5 E Off Drain to Source Current, I DS (A) Drain to Source Current, I DS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (V DD = 6V) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V DD = 4V) 6 C3M659J Rev. C, 1-218

7 Typical Performance Switching Loss (uj) V DD = 4 V I DS = 2 A V GS = -4V/+15 V FWD = C3M659J L = 77 μh E Total E On Switching Loss (uj) E Total E On I DS = 2 A V DD = 4 V R G(ext) = 2.5 Ω V GS = -4V/+15 V FWD = C3M659J L = 77 μh 5 E Off 2 E Off External Gate Resistor RG(ext) (Ohms) Junction Temperature, T J ( C) Figure 25. Clamped Inductive Switching Energy vs. R G(ext) Figure 26. Clamped Inductive Switching Energy vs. Temperature Times (ns) V DD = 4 V I DS = 2 A V GS = -4V/+15 V FWD = C3M659J L = 77 μh t d(off) t r 15 t d(on) 1 t f External Gate Resistor RG(ext) (Ohms) Figure 27. Switching Times vs. R G(ext) Figure 28. Switching Times Definition 35 3 Conditons: V DD = 5 V Avalanche Current (A) Time in Avalanche T AV (us) Figure 29. Single Avalanche SOA curve 7 C3M659J Rev. C, 1-218

8 Test Circuit Schematic R G Q 1 V DC V GS= - 4 V KS R G Q 2 KS Figure 3. Clamped Inductive Switching Waveform Test Circuit Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above. 8 C3M659J Rev. C, 1-218

9 Package Dimensions TO Package 7L D2PAK All Dimensions in Millimeters Dim Min typ Max A A b b c C D D E E E e 1.27 H L L Ø 4 8 Ø C3M659J Rev. C, 1-218

10 Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 211/65/ EC (RoHS2), as implemented January 2, 213. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links SiC MOSFET Isolated Gate Driver reference design: Application Considerations for Silicon-Carbide MOSFETs: Copyright 218 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc. 46 Silicon Drive Durham, NC 2773 USA Tel: Fax: C3M659J Rev. C, 1-218

C3M J. Silicon Carbide Power MOSFET C3M TM MOSFET Technology. N-Channel Enhancement Mode. Features. Package. Benefits.

C3M J. Silicon Carbide Power MOSFET C3M TM MOSFET Technology. N-Channel Enhancement Mode. Features. Package. Benefits. C3M0280090J Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode V DS I D @ 25 C R DS(on) 900 V 11 A 280 mω Features Package New C3M SiC MOSFET technology High blocking voltage

More information

C3M K. Silicon Carbide Power MOSFET C3M TM MOSFET Technology. N-Channel Enhancement Mode. Features. Package. Benefits.

C3M K. Silicon Carbide Power MOSFET C3M TM MOSFET Technology. N-Channel Enhancement Mode. Features. Package. Benefits. C3M0030090K Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode Features Package V DS I D @ 25 C R DS(on) 900 V 63 A 30 mω C3M TM SiC MOSFET technology Optimized package with

More information

GCMS080A120S1 E1. Preliminary Data Sheet. 1200V/80 mohm SiC MOSFET in SOT-227 Package

GCMS080A120S1 E1. Preliminary Data Sheet. 1200V/80 mohm SiC MOSFET in SOT-227 Package 1200V/80 mohm SiC MOSFET in SOT-227 Package V RRM =1200V I D = 20A @T C = 80 0 C R DS_ON = 80 mohm @ T J = 25 0 C 1 1 4 2 2 3 Features High speed switching SiC MOSFET Freewheeling diode with zero reverse

More information

Z-Rec Rectifier. C4D02120A Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications

Z-Rec Rectifier. C4D02120A Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications C4D22 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 2 V ( =35 C) = 5 Q c = nc Features Package.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent

More information

TO-220-3L Inner Circuit Product Summary C) RDS(on) Parameter Symbol Test Conditions Value Unit

TO-220-3L Inner Circuit Product Summary C) RDS(on) Parameter Symbol Test Conditions Value Unit H1M65B1 Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-22-3L Inner Circuit Product Summary VDS ID(@25 C) RDS(on) 65V 25A 1mΩ Features Low On-Resistance Low Capacitance Avalanche Ruggedness

More information

C3D20060D Silicon Carbide Schottky Diode Z-Rec Rectifier

C3D20060D Silicon Carbide Schottky Diode Z-Rec Rectifier C3D060D Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 600 V ( =135 C) = 28 A** Q c = nc** Features 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency

More information

Package TO = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note 29.5/59 14/28 10/20 67/134 44/88 90/157 71/115

Package TO = 25 C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note 29.5/59 14/28 10/20 67/134 44/88 90/157 71/115 C3D265D Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 28 A** Q c = 5 nc** Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency

More information

C3D1P7060Q Silicon Carbide Schottky Diode Z-Rec Rectifier

C3D1P7060Q Silicon Carbide Schottky Diode Z-Rec Rectifier C3D1P060Q Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 600 V ( =135 C) = 3 A Q c = 4.4 nc Features 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current

More information

CAS325M12HM2 1.2kV, 3.6 mω All-Silicon Carbide High Performance, Half-Bridge Module C2M MOSFET and Z-Rec TM Diode

CAS325M12HM2 1.2kV, 3.6 mω All-Silicon Carbide High Performance, Half-Bridge Module C2M MOSFET and Z-Rec TM Diode CAS325M12HM2 1.2k, 3.6 mω All-Silicon Carbide High Performance, Half-Bridge Module C2M MOSFET and Z-Rec TM Diode DS E sw, Total @ 600, 300A R DS(on) 1.2 k 9.3 mj 3.6 mω Features Ultra Low Loss, Low (5

More information

Z-Rec Rectifier. C4D02120E Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications

Z-Rec Rectifier. C4D02120E Silicon Carbide Schottky Diode. Package. Features. Benefits. Applications C4D212E Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 4.5 Q c = 11 nc Features Package 1.2kV Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current

More information

TO-247-3L Inner Circuit Product Summary C) RDS(on) Parameter Symbol Test Conditions Value Unit

TO-247-3L Inner Circuit Product Summary C) RDS(on) Parameter Symbol Test Conditions Value Unit Silicon Carbide Power MOSFET N-CHANNEL ENHANCEMENT MODE TO-247-3L Inner Circuit Product Summary VDS ID(@25 C) RDS(on) 650V 110A 20mΩ Features Low On-Resistance Low Capacitance Avalanche Ruggedness Halogen

More information

C4D05120A Silicon Carbide Schottky Diode Z-Rec Rectifier

C4D05120A Silicon Carbide Schottky Diode Z-Rec Rectifier C4D512 Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 12 V ( =135) = 9.5 Q c = 27 nc Features Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent

More information

C4D02120A Silicon Carbide Schottky Diode Z-Rec Rectifier

C4D02120A Silicon Carbide Schottky Diode Z-Rec Rectifier C4D22 Silicon Carbide Schottky Diode Z-Rec Rectifier Features.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive

More information

C4D05120E Silicon Carbide Schottky Diode Z-Rec Rectifier

C4D05120E Silicon Carbide Schottky Diode Z-Rec Rectifier C4D12E Silicon Carbide Schottky Diode Z-Rec Rectifier Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast

More information

C3D1P7060Q Silicon Carbide Schottky Diode Z-Rec Rectifier

C3D1P7060Q Silicon Carbide Schottky Diode Z-Rec Rectifier C3D1P7Q Silicon Carbide Schottky Diode Z-Rec Rectifier RM = V ( =135 C) = 3.3 A Q c = 4 nc Features -Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency

More information

GCMS004A120S7B1. Preliminary Datasheet. 1200V 4.2 m SiC MOSFETs Half Bridge Module. Features. Applications. Benefits

GCMS004A120S7B1. Preliminary Datasheet. 1200V 4.2 m SiC MOSFETs Half Bridge Module. Features. Applications. Benefits 1200V 4.2 m SiC MOSFETs Half Bridge Module Features Ultra Low Loss with SiC MOSFETs Zero Reverse Recovery Current with SiC SBDs Zero Turn off Tail Current High Frequency Operation Positive Temperature

More information

C4D20120H Silicon Carbide Schottky Diode Z-Rec Rectifier

C4D20120H Silicon Carbide Schottky Diode Z-Rec Rectifier C4D212H Silicon Carbide Schottky Diode Z-Rec Rectifier Features 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching

More information

C3D10065E Silicon Carbide Schottky Diode Z-Rec Rectifier

C3D10065E Silicon Carbide Schottky Diode Z-Rec Rectifier C3D165E Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 65 V ( =135 C) = 15 Q c = 24 nc Features 65-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency

More information

C3D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier

C3D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier C3D65I Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65-Volt Schottky Rectifier Ceramic Package Provides 2.5kV Isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent

More information

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

C3D20060D Silicon Carbide Schottky Diode Z-Rec Rectifier

C3D20060D Silicon Carbide Schottky Diode Z-Rec Rectifier C3D26D Silicon Carbide Schottky Diode Z-Rec Rectifier RM = 6 V ( =135 C) = 26 ** Q c = 48 nc** Features 6-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency

More information

MDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ

MDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ General Description MDE1N26RH Single N-channel Trench MOSFET V, 12A, 2.6mΩ The MDE1N26 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

MDV1545 Single N-Channel Trench MOSFET 30V

MDV1545 Single N-Channel Trench MOSFET 30V General Description The MDV1545 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1545 is suitable

More information

C3D03060F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak)

C3D03060F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak) C3D36F Silicon Carbide Schottky Diode Z-Rec Rectifier (Full-Pak) RM = 6 V ( =1 C) = 3 Q c = 6.7 nc Features 6-Volt Schottky Rectifier Optimized for PFC Boost Diode pplication Zero Reverse Recovery Current

More information

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

N-Channel 100-V (D-S) MOSFET

N-Channel 100-V (D-S) MOSFET N-Channel -V (D-S) MOSFET 3 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) I D (A). at V GS = V. at V GS = V 7.5 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature Low Thermal Resistance Package Available

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a, e Q g (Typ.). at V GS = V at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View Pin Top View FEATURES APPLICATIONS D 3 4 8 7 5 G Pin

More information

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance

More information

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,

More information

N-Channel 60 V (D-S), MOSFET

N-Channel 60 V (D-S), MOSFET N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET

STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STD10NF10 100 V

More information

P-Channel 100 V (D-S) MOSFET

P-Channel 100 V (D-S) MOSFET SUD9P-95 P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) Q g (Typ.).95 at V GS = - V - 8.8 -.7.2 at V GS = - 4.5 V - 8.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power

More information

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

Data Sheet GHIS030A120S-A2

Data Sheet GHIS030A120S-A2 Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =1200V I C = 30A @T C = 100 0 C E A G C Features Field StopTrench Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50

More information

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω

MDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested

More information

UF3C120080K4S. 1200V-80mW SiC Cascode DATASHEET. Description. Features. Typical applications CASE D (1) CASE G (4) KS (3) S (2) Rev.

UF3C120080K4S. 1200V-80mW SiC Cascode DATASHEET. Description. Features. Typical applications CASE D (1) CASE G (4) KS (3) S (2) Rev. 1V-8mW SiC Cascode Rev. A, January 19 DATASHEET UF3C18K4S CASE CASE D (1) Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized

More information

SSF6014D 60V N-Channel MOSFET

SSF6014D 60V N-Channel MOSFET Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology

More information

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for

More information

Super Junction MOSFET

Super Junction MOSFET 65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche

More information

C3D30065D Silicon Carbide Schottky Diode Z-Rec Rectifier

C3D30065D Silicon Carbide Schottky Diode Z-Rec Rectifier C3D365D Silicon Carbide Schottky Diode Z-Rec Rectifier Features 65 Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching

More information

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω MDP15N6G / MDF15N6G N-Channel MOSFET 6V MDP15N6G / MDF15N6G N-Channel MOSFET 6V, 15A,.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides

More information

N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description

N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package. Features. Description N-channel 30 V, 2.5 mω typ., 120 A STripFET H6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STP160N3LL 30 V 3.2 mω 120 A 136 W Very low

More information

Characteristics Symbol Rating Unit

Characteristics Symbol Rating Unit General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω

MDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance

More information

MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω

MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

MDV1548 Single N-Channel Trench MOSFET 30V

MDV1548 Single N-Channel Trench MOSFET 30V General Description The MDV1548 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1548 is suitable

More information

MMD65R900Q 650V 0.90Ω N-channel MOSFET

MMD65R900Q 650V 0.90Ω N-channel MOSFET MMD65R900Q 650V 0.90Ω N-channel MOSFET Description MMD65R900Q is power MOSFET using MagnaChip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide

More information

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level

N-Channel 60 V (D-S), 175 C MOSFET, Logic Level N-Channel 6 V (D-S), 75 C MOSFET, Logic Level SUD23N6-3L PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a.3 at V GS = V 23 6.45 at V GS = 4.5 V 9.5 FEATURES TrenchFET Power MOSFET 75 C Junction Temperature

More information

STP60NF06 STP60NF06FP

STP60NF06 STP60NF06FP STP60NF06 STP60NF06FP N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP60NF06 STP60NF06FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60A 60A TYPICAL R DS (on) = 0.014Ω EXCEPTIONAL

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition

More information

Power MOSFET FEATURES. IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A

Power MOSFET FEATURES. IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A Power MOSFET IRFIB6N60A, SiHFIB6N60A PRODUCT SUMMARY V DS (V) 600 R DS(on) (Ω) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single TO-220 FULLPAK D G FEATURES Low Gate Charge

More information

Power MOSFET FEATURES. IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 T C = 25 C

Power MOSFET FEATURES. IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D

More information

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ

MDU1516 Single N-channel Trench MOSFET 30V, 47.6A, 9.0mΩ MDU1516 Single N-Channel Trench MOSFET 3V MDU1516 Single N-channel Trench MOSFET 3V, 7.6A, 9.mΩ General Description Features The MDU1516 uses advanced MagnaChip s MOSFET Technology, which provides high

More information

MDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω

MDFS11N60 N-Channel MOSFET 600V, 11A, 0.55Ω General Description The MDFS11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDFS11N6 is suitable device for SMPS,

More information

Data Sheet GHIS040A060S A2

Data Sheet GHIS040A060S A2 Buck Chopper with Field Stop Trench IGBT + SiC SBD V CES =600V I C = 40A @T C = 100 0 C Features Field StopTrench Fast IGBT Low voltage drop Low tail current Switching frequency up to 50 khz Low leakage

More information

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω

MDF10N65B N-Channel MOSFET 650V, 10.0A, 1.0Ω MDFN5B N-channel MOSFET 5V MDFN5B N-Channel MOSFET 5V,.A,.Ω General Description The MDFN5B MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high

More information

IRF130, IRF131, IRF132, IRF133

IRF130, IRF131, IRF132, IRF133 October 1997 SEMICONDUCTOR IRF13, IRF131, IRF132, IRF133 12A and 14A, 8V and 1V,.16 and.23 Ohm, N-Channel Power MOSFETs Features Description 12A and 14A, 8V and 1V r DS(ON) =.16Ω and.23ω Single Pulse Avalanche

More information

-55 to 175 C T j ( ) Pulse width limited by safe operating area.

-55 to 175 C T j ( ) Pulse width limited by safe operating area. N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested

More information

P-Channel 40 V (D-S) 175 C MOSFET

P-Channel 40 V (D-S) 175 C MOSFET P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC

More information

P-Channel 40 V (D-S) 175 C MOSFET

P-Channel 40 V (D-S) 175 C MOSFET P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC

More information

P-Channel 30 V (D-S) 175 C MOSFET

P-Channel 30 V (D-S) 175 C MOSFET P-Channel 3 V (D-S) 75 C MOSFET SUB75P3-7, SUP75P3-7 PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.7 at V GS = - V ± 75-3. at V GS = - 4.5 V ± 75 FEATURES Compliant to RoHS Directive 22/95/EC Available

More information

Data Sheet GHXS030A120S D3

Data Sheet GHXS030A120S D3 SiC SBD Parallel Power Module V RRM =1200V I DAV = 30A @T C = 125 0 C Features SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature

More information

P-Channel 40 V (D-S), 175 C MOSFET

P-Channel 40 V (D-S), 175 C MOSFET P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant

More information

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ

MDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance

More information

Features. Applications. Benefits

Features. Applications. Benefits SiC SBD Rectifier Bridge Power Module V RRM =600V I DAV = 30A @T C = 125 0 C Features SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive

More information

HGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS

HGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS , HGI29NSL P- Feature High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness % UIS Tested, % Rg Tested Lead Free, Halogen Free V N-Ch Power MOSFET V

More information

Power MOSFET FEATURES. IRF830PbF SiHF830-E3 IRF830 SiHF830 T C = 25 C

Power MOSFET FEATURES. IRF830PbF SiHF830-E3 IRF830 SiHF830 T C = 25 C Power MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) ( ) = 0 V. Q g (Max.) (nc) 38 Q gs (nc).0 Q gd (nc) Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of

More information

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω MDFNG N-channel MOSFET V MDFNG N-Channel MOSFET V, A,.7Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high

More information

Super Junction MOSFET

Super Junction MOSFET APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv

More information

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S

More information

Dual N-Channel 60-V (D-S) MOSFET

Dual N-Channel 60-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).38 at V GS = V 7..3 at V GS =. V.8 9. nc SO-8 FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power

More information

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6.

Characteristics Symbol Rating Unit. T C=70 o C 53.0 T A=25 o C 22.8 (3) T A=70 o C 18.2 (3) Pulsed Drain Current I DM 100 A 46.2 T C=70 o C 29.6. General Description The MDU1514 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable

More information

STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET

STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE

More information

N-Channel 40-V (D-S), 175 C MOSFET

N-Channel 40-V (D-S), 175 C MOSFET N-Channel 4-V (D-S), 75 C MOSFET SUD5N4-9H PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A) c Q g (Typ) 4.9 at V GS = V 5 55 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature High Threshold Voltage

More information

Switch mode power supplies Low gate charge. Power factor correction modules Low intrinsic capacitance

Switch mode power supplies Low gate charge. Power factor correction modules Low intrinsic capacitance Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

More information

N-Channel Power MOSFET 30V, 185A, 1.8mΩ

N-Channel Power MOSFET 30V, 185A, 1.8mΩ TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in

More information

Complementary N- and P-Channel 40-V (D-S) MOSFET

Complementary N- and P-Channel 40-V (D-S) MOSFET Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET SiDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).68 at V GS =. V.6 a nc.8 at V GS =. V. TO-6 (SOT-) FEATURES Halogen-free According to IEC 69-- Definition TrenchFET

More information

Switch mode power supplies Low gate charge. Power factor correction modules Low intrinsic capacitance

Switch mode power supplies Low gate charge. Power factor correction modules Low intrinsic capacitance Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

More information

Switch mode power supplies Excellent reverse recovery. Power factor correction modules Low gate charge Motor drives Low intrinsic capacitance

Switch mode power supplies Excellent reverse recovery. Power factor correction modules Low gate charge Motor drives Low intrinsic capacitance Description United Silicon Carbide's cascode products co-package its xj series highperformance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market

More information

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.

More information

MDP15N075 Single N-channel Trench MOSFET 150V, 120A, 7.5mΩ

MDP15N075 Single N-channel Trench MOSFET 150V, 120A, 7.5mΩ General Description MDP15N75 Single N-channel Trench MOSFET 15V, 1A, 7.5mΩ The MDP15N75 uses advanced MagnaChip s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

OptiMOS 2 Power-Transistor

OptiMOS 2 Power-Transistor IPI9N3LA, IPP9N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

SCT3105KL N-channel SiC power MOSFET

SCT3105KL N-channel SiC power MOSFET SCT35KL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 2V 5mΩ 24A 34W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4)

More information

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600

FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600 DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE

More information

P-Channel 30 V (D-S) 175 C MOSFET

P-Channel 30 V (D-S) 175 C MOSFET P-Channel 3 V (D-S) 75 C MOSFET SUB75P3-7, SUP75P3-7 PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.7 at V GS = - V ± 75-3. at V GS = - 4.5 V ± 75 FEATURES Compliant to RoHS Directive 22/95/EC Available

More information

30V N-Channel Trench MOSFET

30V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD12N3AT, TTP12N3AT 3V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in

More information

40V N-Channel Trench MOSFET

40V N-Channel Trench MOSFET FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 40V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition

More information

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,

More information

P-Channel 100-V (D-S) 175 C MOSFET

P-Channel 100-V (D-S) 175 C MOSFET P-Channel -V (D-S) 75 C MOSFET SUD5P-43L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).43 at V GS = - V - 37-54 nc.48 at V GS = - 4.5 V - 35 FEATURES TrenchFET Power MOSFET Compliant to RoHS

More information