HiPerFAST TM IGBT with Diode Combi Pack

Transcription

1 HiPerFAST TM IGBT with Diode Combi Pack IXGH N6AU IXGH N6AUS S = 6 V = 8 A (sat) =.7 V = 7 ns Symbo Test Conditions Maximum Ratings S = C to C 6 V V CGR = C to C; R GE = MΩ 6 V S Continuous ± V M Transient ± V = C 8 A 9 = 9 C A M = C, ms 96 A SSOA = V, T VJ, R G = Ω M = 8 A (RBSOA) Camped inductive oad, L = S P C = C W C M C T stg C Maximum Lead and Tab temperature for sodering C.6 mm (.6 in.) from case for s M d Mounting torque, TO-7 AD./ Nm/b.in. Weight TO-7 SMD g TO-7 AD 6 g Symbo Test Conditions Characteristic Vaues ( = C, uness otherwise specified) min. typ. max. BS = 7 µa, = V 6 V (th) = µa, =.. V ES =.8 S = C µa = V 8 ma I GES = V, = ± V ± na (sat) = 9, = V.7 V TO-7 SMD (N6AUS) TO-7 AD (N6AU) G C E G = Gate, E = Emitter, G C = Coector, TAB = Coector C (TAB) Features Internationa standard packages JEDEC TO-7 SMD surface mountabe and JEDEC TO-7 AD IGBT and anti-parae FRED in one package nd generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction osses MOS Gate turn-on - drive simpicity Fast Recovery Epitaxia Diode (FRED) - soft recovery with ow I RM Appications AC motor speed contro DC servo and robot drives DC choppers Uninterruptibe power suppies (UPS) Switch-mode and resonant-mode power suppies Advantages Space savings (two devices in one package) Easy to mount with screw, TO-7 (isoated mounting screw hoe) Reduces assemby time and cost E C (TAB) 997 IXYS Corporation. A rights reserved. 977H (/97)

2 IXGHN6AU Symbo Test Conditions Characteristic Vaues ( = C, uness otherwise specified) min. typ. max. g fs = 9 ; = V, 9 S Puse test, t µs, duty cyce % C ies pf C oes = V, = V, f = MHz 7 pf C res pf IXGHN6AUS TO-7 AD Outine P Q g 9 nc Q ge = 9, = V, =. S nc Q gc nc t d(on) Inductive oad, = C ns t ri = 9, = V, L = µh, ns E on =.8 S, R G = R off = Ω.6 mj t d(off) Remarks: Switching times may increase ns for V 7 ns E CE (Camp) >.8 S, higher or off increased R. mj G t d(on) Inductive oad, ns t ri ns I E C = 9, = V, L = µh on.8 mj t =.8 S, R G = R off = Ω d(off) ns t Remarks: Switching times may increase fi ns E for (Camp) >.8 S, higher or off. mj increased R G R thjc.8 K/W R thck. K/W e Dim. Miimeter Inches Min. Max. Min. Max. A A A b.... b b C D E e..7.. L L..77 P..6.. Q R S 6. BSC BSC TO-7 SMD Outine Reverse Diode (FRED) Characteristic Vaues ( = C, uness otherwise specified) Symbo Test Conditions min. typ. max. V F = 9, = V,.6 V Puse test, t µs, duty cyce d % I RM = 9, = V, - /dt = A/µs A t rr = 6 V ns = A; -di/dt = A/µs; = V = C ns K/W R thjc. Gate. Coector. Emitter. Coector Min. Recommended Footprint (Dimensions in inches and (mm)) IXYS reserves the right to change imits, test conditions, and dimensions. Dim. Miimeter Inches Min. Max. Min. Max. A A A b.... b C D E e. BSC. BSC L L L L.... L ØP..6.. Q R S 6. BSC. BSC IXYS MOSFETS and IGBTs are covered by one or more of the foowing U.S. patents:,8,9,88,6,7,8,9,96,87,7,86,7,8,7,9,8,,796,6,7,7,8,8,

3 IXGHN6AU IXGHN6AUS Fig. Saturation Characteristics Fig. Output Characterstics - Amperes = C = V V V 9V 7V - Amperes 7 = C = V V V 9V 7V Vots - Vots - Vots Fig. Coector-Emitter Votage Fig. Temperature Dependence vs. Gate-Emitter Votage of Output Saturation Votage = C I C = A = A = A (sat) - Normaized.6 = V = A... = A.8 = A Vots - Degrees C - Amperes Fig. Input Admittance = V = C = - C BV / (th) - Normaized Fig. 6 Temperature Dependence of Breakdown and Threshod Votage BS = µa (th) = µa Vots GN6p.JNB - Degrees C 997 IXYS Corporation. A rights reserved.

4 IXGHN6AU IXGHN6AUS Fig.7 Turn-Off Energy per Puse and Fa Time on Coector Current R G = Ω Fig.8 Dependence of Turn-Off Energy Per Puse and Fa Time on R G = A - nanoseconds - miijoues - nanoseconds - miijoues - Amperes 6 8 RG - Ohms Fig.9 Gate Charge Characteristic Curve Fig. Turn-Off Safe Operating Area - Vots 9 6 = A = V - Amperes R G = Ω dv/dt < V/ns. 7 Q g - nanocouombs GN6P.JNB. 6 - Vots Fig. Transient Therma Impedance D=. D=. Z thjc (K/W). D=. D=. D=. D = Duty Cyce D=. Singe Puse..... Puse Width - seconds IXYS reserves the right to change imits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the foowing U.S. patents:,8,9,88,6,7,8,9,96,87,7,86,7,8,7,9,8,,796,6,7,7,8,8,

5 IXGHN6AU IXGHN6AUS Fig. Maximum Forward Votage Drop Fig. Peak Forward Votage V FR and Forward Recovery Time t FR Current - Amperes 8 6 = C = C = C V FR - Vots = 7A V FR 8 6 t fr - nanoseconds t fr..... Votage Drop - Vots Fig. Junction Temperature Dependence 6 Fig. Reverse Recovery Chargee off I RM and Q r Normaized I RM /Q r I RM Q r Q r - nanocouombs = C = V typ. = 6A = A = A = A max Degrees C Fig.6 Peak Reverse Recovery Current Fig.7 Reverse Recovery Time I RM - Amperes = C = V typ. = 6A = A = A = A max. t rr - nanoseconds = A max. typ. = 6A = A = A = C = V IXYS Corporation. A rights reserved.

6 IXGHN6AU IXGHN6AUS Fig.7 Diode Transient Therma resistance junction to case. R thjc - K/W..... Puse Width - Seconds IXYS reserves the right to change imits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the foowing U.S. patents:,8,9,88,6,7,8,9,96,87,7,86,7,8,7,9,8,,796,6,7,7,8,8,