= 25 C = 110 C = 150 C. Watts T J = 0V, I C. = 1mA, T j = 25 C) = 25 C) = 35A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)

Transcription

1 V APT3GP1BDQ APT3GP1BDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applicatio and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss RBSOA Rated Low Gate Charge Ultrafast Tail Current shutoff C G E MAXIMUM RATINGS All Ratings: T C unless otherwise specified. Parameter S Collector-Emitter Voltage Gate-Emitter Voltage ± Volts 1 Continuous Collector T C 96 Continuous Collector T C = 1 C 46 M Pulsed Collector Current 1 RBSOA Reverse Bias Safe Operating = 1 C 9V P D Total Power Dissipation 43 Watts,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.63" from Case for Sec. - to 1 C STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditio Units V (BR)CES Collector-Emitter Breakdown Voltage ( = V, = 3µA) (TH) (ON) ES I GES Gate Threshold Voltage ( =, = 1mA, T j ) Collector-Emitter On Voltage (,, T j ) Collector-Emitter On Voltage (,, T j = 1 C) Collector Cut-off Current ( = V, = V, T j ) Collector Cut-off Current ( = V, = V, T j = 1 C) Gate-Emitter Leakage Current ( = ±V) ± CAUTION: These Devices are Seitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - Volts µa na

2 DYNAMIC CHARACTERISTICS Characteristic Test Conditio C ies C oes C res P Q g Q ge Q gc Input Capacitance Output Capacitance Reverse Trafer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Capacitance = V, = V f = 1 MHz Gate Charge pf V nc RBSOA Reverse Bias Safe Operating Area = 1 C,, = 1V, L = µh, = 9V A t d(on) t r t d(off) t f E on1 E on E off t d(on) t r t d(off) t f E on1 E on E off Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 Inductive Switching ( C) V CC = + C Inductive Switching (1 C) V CC = +1 C µj µj THERMAL AND MECHANICAL CHARACTERISTICS Characteristic R θjc R θjc W T Junction to Case (IGBT) Junction to Case (DIODE) Package Weight C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-7 Method E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 1, but with a Silicon Carbide diode. E on is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 1,.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD4-1. (See Figures 1, 3.) APT Reserves the right to change, without notice, the specificatio and information contained h

3 BS, COLLECTOR-TO-EMITTER BREAKDOWN, COLLECTOR-TO-EMITTER VOLTAGE (V), COLLECTOR CURRENT (A), COLLECTOR CURRENT (A) VOLTAGE (NORMALIZED) , COLLECTER-TO-EMITTER VOLTAGE (V), COLLECTER-TO-EMITTER VOLTAGE (V) 1 µs PULSE TEST<. % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nc) µs PULSE TEST <. % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V), Junction Temperature ( C) FIGURE, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature = 1 C FIGURE 1, Output Characteristics( ) = 1 C = - C FIGURE 3, Trafer Characteristics = 7A. µs PULSE TEST <. % DUTY CYCLE = 17.A , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature, DC COLLECTOR CURRENT(A), COLLECTOR-TO-EMITTER VOLTAGE (V), GATE-TO-EMITTER VOLTAGE (V), COLLECTOR CURRENT (A) = 1 C FIGURE, Output Characteristics ( = 1 C) = 7A = V FIGURE 4, Gate Charge Lead Temperature Limited = 9V = 17.A

4 1 SWITCHING ENERGY LOSSES (µj) E ON, TURN ON ENERGY LOSS (µj) t r, RISE TIME () t d(on), TURN-ON DELAY TIME () 1 E FIGURE 9, Turn-On Delay Time vs Collector Current or 1 C L = µh, L = µh, E FIGURE 11, Current Rise Time vs Collector Current = +1V E FIGURE 13, Turn-On Energy Loss vs Collector Current 7, GATE RESISTANCE (OHMS) FIGURE 1, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µj) E OFF, TURN OFF ENERGY LOSS (µj) t f, FALL TIME () t d (OFF), TURN-OFF DELAY TIME () L = µh =1V, =1 C =1V, = C 7 7 = or 1 C, 1 1 E FIGURE, Turn-Off Delay Time vs Collector Current E FIGURE 1, Current Fall Time vs Collector Current E FIGURE 14, Turn Off Energy Loss vs Collector Current = +1V 7 7 = +1V = 1 C = 1 C 7A E on, 7A E on, 3A 3A E on, 17.A 17.A, L = µh, = +1V 7A 3A = 1 C,, = 1 C E on, 7A 17.A E on, 3A E on, 17.A 7 1, JUNCTION TEMPERATURE ( C) FIGURE 16, Switching Energy Losses vs Junction Temperature

5 , 1 C, CAPACITANCE ( P F) 1, C ies C oes, COLLECTOR CURRENT (A) 1 C res 7 9, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS), COLLECTOR TO EMITTER VOLTAGE Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area. Z θjc, THERMAL IMPEDANCE ( C/W)..1.. D = SINGLE PULSE Duty Factor D = t1 /t. Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Traient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t 1 t 1 Junction temp. ( ºC) Power (Watts) Case temperature RC MODEL FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL F MAX, OPERATING FREQUENCY (khz) = 1 C T C = 7 C D = % = V = Ω 7 7, COLLECTOR CURRENT (A) Figure, Operating Frequency vs Collector Current F max = min (f max, f max ). f max1 = td(on) + t r + t d(off) + t f f max = P diss = P diss - P cond E on + E off - T C R θjc

6 Gate Voltage APTDQ1 % = 1 C t d(on) t r V CC 9% Collector Current % % % Collector Voltage A Switching Energy D.U.T. Figure 1, Inductive Switching Test Circuit Figure, Turn-on Switching Waveforms and Definitio 9% t d(off) 9% Gate Voltage = 1 C t f Collector Voltage % Switching Energy Collector Current Figure 3, Turn-off Switching Waveforms and Definitio

7 ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS All Ratings: T C unless otherwise specified. Characteristic / Test Conditio (AV) (RMS) SM Maximum Average Forward Current (T C = 11 C, Duty Cycle =.) RMS Forward Current (Square wave, % duty) Non-Repetitive Forward Surge Current ( = 4 C, 8.3ms) 63 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditio V F Forward Voltage = 7A, = 1 C Volts DYNAMIC CHARACTERISTICS Characteristic Test Conditio Reverse Recovery Time = 1A, di F /dt = -A/µs, = V, Reverse Recovery Time I Reverse Recovery Charge F = A, di F /dt = -A/µs = V, T C Maximum Reverse Recovery Current nc Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current = A, di F /dt = -A/µs = V, T C = 1 C nc Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current = A, di F /dt = -A/µs = V, T C = 1 C nc.7 Z θjc, THERMAL IMPEDANCE ( C/W)..... D = Duty Factor D = t1 /t.1 Peak T SINGLE PULSE J = P DM x Z θjc +. T C RECTANGULAR PULSE DURATION (seconds) FIGURE 4a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp ( C) Note: P DM t 1 t Power (watts) Case temperature ( C) FIGURE 4b, TRANSIENT THERMAL IMPEDANCE MODEL

8 , REVERSE RECOVERY CHARGE, FORWARD CURRENT (nc) (A) = 1 C = V A A V F, ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/µs) Figure. Forward Current vs. Forward Voltage Figure 6. Reverse Recovery Time vs. Current Rate of Change -di F /dt, CURRENT RATE OF CHANGE (A/µs) -di F /dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Charge vs. Current Rate of Change Figure 8. Reverse Recovery Current vs. Current Rate of Change C J, JUNCTION CAPACITANCE K f, DYNAMIC PARAMETERS (pf) (Normalized to A/µs) = 1 C = V A = 1 C = 17 C A = - C A A Duty cycle =. = 17 C , JUNCTION TEMPERATURE ( C) Case Temperature ( C) Figure 9. Dynamic Parameters vs. Junction Temperature Figure. Maximum Average Forward Current vs. CaseTemperature 1 1, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage, REVERSE RECOVERY CURRENT, REVERSE RECOVERY TIME (A) () (AV) (A) = 1 C = V A A A

9 V r +18V di F /dt Adjust APT3LLL V D.U.T. µh / Waveform PEARSON 878 CURRENT TRANSFORMER Figure 3. Diode Test Circuit Forward Conduction Current di F /dt - Rate of Diode Current Change Through Zero Crossing. - Maximum Reverse Recovery Current. Zero - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through and. passes through zero Area Under the Curve Defined by and. Figure 33, Diode Reverse Recovery Waveform and Definitio T-MAX (B) Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.18).31 (.9) 1.49 (.9).49 (.98) 1.49 (.6) 16.6 (.6).38 (.1) 6. (.44) Collector. (.819) 1.46 (.84). (.16).79 (.31) (.7).3 (.) 4. (.177) Max. 1.1 (.) 1. (.).1 (.87).9 (.).4 (.1) BSC -Plcs. Dimeio in Millimeters and (Inches) APT s products are covered by one or more of U.S.patents 4,89,8,4,93,89,434,18,34,19,.87 (.113) 3.1 (.13) 1.6 (.6).13 (.84) Gate Collector Emitte,6,336 6,3,786,6,83 4,748,3,83,,31,474,434,9,8,8 and foreign patents. US and Foreign patents pending. All Rights Reserved.