CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

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1 V 3 Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-47 Low Forward Voltage Drop Low Tail Current valanche Rated High Freq. Switching to KHz Ultra Low Leakage Current RBSO and SCSO Rated G C E G C MXIMUM RTINGS E ll Ratings: T C = 5 C unless otherwise specified. Parameter ES Collector-Emitter Voltage GR Collector-Gate Voltage (R GE = KW) Volts V GE Gate-Emitter Voltage ± Continuous Collector T C = 5 C 3 M Continuous Collector T C = 9 C Pulsed Collector T C = 5 C 64 mps I LM RBSO Clamped Inductive Load R g = W T C = 5 C E S Single Pulse valanche Energy P D Total Power Dissipation Watts T J,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.63" from Case for Sec. -55 to C STTIC ELECTRICL CHRCTERISTICS Characteristic / Test Conditio MIN TYP MX BES Collector-Emitter Breakdown Voltage (V GE = V, = m) V GE (TH) Gate Threshold Voltage (E = V GE, = 3µ, T j = 5 C) Volts E (ON) ES Collector-Emitter On Voltage (, = 5, T j = 5 C) Collector Cut-off Current (E = ES, V GE = V, T j = 5 C).7 3. Collector-Emitter On Voltage (, = 5, T j = 5 C) Collector Cut-off Current (E = ES, V GE = V, T j = 5 C) m I GES Gate-Emitter Leakage Current (V GE = ±V, E = V) ± n CUTION: These Devices are Seitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. PT Website - US 5 S.W. Columbia Street Bend, Oregon Phone: (54) FX: (54) EUROPE Chemin de Magret F-337 Merignac - France Phone: (33) FX: (33) Rev B -

2 DYNMIC CHRCTERISTICS Characteristic Test Conditio MIN TYP MX C ies C oes C res Q g Q ge Q gc Input Capacitance Output Capacitance Reverse Trafer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Capacitance V GE = V E = 5V f = MHz Gate Charge C =.5ES = pf nc Resistive Switching (5 C) C =.5ES = Turn-on Switching Energy Turn-off Switching Energy Inductive Switching ( C) LMP (Peak) =.66ES = T J = + C E ts Total Switching Losses.7 E ts Total Switching Losses Inductive Switching (5 C) LMP (Peak) =.66ES = gfe Forward Traconductance E = V, = S THERML ND MECHNICL CHRCTERISTICS Characteristic MIN TYP MX R QJC R QJ Junction to Case Junction to mbient.63 C/W W T Package Weight. 6. oz gm Torque Mounting Torque (using a 6-3 or 3mm Binding Head Machine Screw). lb in N m 5-64 Rev B - Repetitive Rating: Pulse width limited by maximum junction temperature. IC =, R GE = 5W, L = µh, T j = 5 C 3 See MIL-STD-7 Method 347 PT Reserves the right to change, without notice, the specificatio and information contained herein.

3 C, CPCITNCE (pf), COLLECTOR CURRENT (MPERES), COLLECTOR CURRENT (MPERES) µsec. Pulse Test f = MHz V GE =7 & 5V 3V V 9V C ies C res V GE, GTE-TO-EMITTER VOLTGE (VOLTS), COLLECTOR CURRENT (MPERES), COLLECTOR CURRENT (MPERES) T C =+5 C T J =+ C SINGLE PULSE = V GE =7 & 5V 3V 7V 7V Figure, Typical Output Characteristics (T J = 5 C) Figure, Typical Output Characteristics (T J = C) 6 T C =-55 C T C =+5 C T C =+ C C oes OPERTION LIMITED BY E (ST) Figure 3, Typical Output Figure 4, Maximum Forward Safe Operating rea,, Q g, TOTL GTE CHRGE (nc) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage E =V E =6V V 9V µs ms ms Z qjc, THERML IMPEDNCE ( C/W) D= SINGLE PULSE Note: P DM t t Duty Factor D = t /t Peak T J = P DM x Z θjc + T C RECTNGULR PULSE DURTION (SECONDS) Figure 7, Maximum Effective Traient Thermal Impedance, Junction-To-Case vs Pulse Duration 5-64 Rev B -

4 5-64 Rev B -, COLLECTOR CURRENT (MPERES) TOTL SWITCHING ENERGY LOSSES () BES, COLLECTOR-TO-EMITTER BREKDOWN E (ST), COLLECTOR-TO-EMITTER VOLTGE (NORMLIZED) STURTION VOLTGE (VOLTS) T C, CSE TEMPERTURE ( C) Figure 8, Typical E (ST) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature R G, GTE RESISTNCE (OHMS) Figure, Breakdown Voltage vs Junction Temperature Figure, Typical Switching Energy Losses vs Gate Resistance , COLLECTOR CURRENT (MPERES) Figure, Typical Switching Energy Losses vs. Junction Temperature Figure 3, Typical Switching Energy Losses vs Collector Current C =.66 ES V GE = +5V R G = W.5.5 C =.66 ES V GE = +5V = C =.66 ES V GE = +5V T J = +5 C R G = W.. F, FREQUENCY (KHz) Figure 4,Typical Load Current vs Frequency SWITCHING ENERGY LOSSES () SWITCHING ENERGY LOSSES (), COLLECTOR CURRENT (MPERES) For Both: Duty Cycle = % T J = +5 C T sink = +9 C Gate drive as specified Power dissapation = 56W I LOD = I RMS of fundamental

5 HRGE *DRIVER SME TYPE S C =.66 ES E ts = + B 9% % 9% 9% uh LMP B R G % E (ST) % DRIVER* t=us Figure 5, Switching Loss Test Circuit and Waveforms E (off) 9% V GE (on) C R L =.5 ES % V GE (off) E (on) From Gate Drive Circuitry R G Figure 6, Resistive Switching Time Test Circuit and Waveforms 4.69 (.85) 5.3 (.9).49 (.59).49 (.98) T-47 Package Outline 6.5 (.4) BSC 5.49 (.6) 6.6 (.6) 5.38 (.) 6. (.44) Collector.8 (.89).46 (.845) 3. (.38) 3.8 (.) 4. (.77) Max..87 (.3) 3. (.3). (.6).79 (.3) 9.8 (.78).3 (.8). (.). (.55). (.87).59 (.) 5.45 (.5) BSC -Plcs. Dimeio in Millimeters and (Inches).65 (.65).3 (.84) Gate Collector Emitter PT's devices are covered by one or more of the following U.S.patents: 4,895,8 5,45,93 5,89,434 5,8,34 5,9,5 5,6,336 5,56,583 4,748,3 5,83, 5,3,474 5,434,95 5,58, Rev B -

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