CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Transcription

1 (G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. V 5 Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-7 Low Forward Voltage Drop Ula Low Leakage Current Low Tail Current RBSO and SCSO Rated High Freq. Switching to KHz G C C E G E IMUM RTINGS (IGBT) ll Ratings: TC = 5 C unless otherwise specified. (G) Parameter ES Collector-Emitter Voltage GR Collector-Gate Voltage (RGE = KΩ) VGE Gate Emitter Voltage ± Continuous Collector TC = 5 C 5 Continuous Collector TC = 5 C Pulsed Collector Current ILM RBSO Clamped Inductive Load RG = Ω TC = 5 C ES Single Pule valanche Energy PD Total Power Dissipation TJ,TSTG TL Volts TC = 5 C M Watts -55 to 5 Operating and Storage Junction Temperature Range C Max. Lead Temp. for Soldering:.6" from Case for Sec. STT ELECTRL CHRCTERISTS (IGBT) VGE(TH) E(ON) I CES I GES Collector-Emitter On Voltage (VGE = 5V, I C = 5, Tj = 5 C).7. Collector-Emitter On Voltage (VGE = 5V, I C = 5, Tj = 5 C)..9 Collector-Emitter Breakdown Voltage (VGE = V, I C =.5m) Gate Threshold Voltage (E = VGE, I C = 7µ, Tj = 5 C).5 Collector Cut-off Current (E = ES, VGE = V, Tj = 5 C).5 Collector Cut-off Current (E = ES, VGE = V, Tj = 5 C) 5. Gate-Emitter Leakage Current (VGE = ±V, E = V) ± CUTION: These Devices are Seitive to Elecostatic Discharge. Proper Handling Procedures Should Be Followed. PT Website - Volts m n - BES Characteristic / Test Conditio 5-6 Rev D

2 (G) DYNM CHRCTERISTS (IGBT) Test Conditio Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Trafer Capacitance Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge Capacitance VGE = V E = 5V f = MHz Gate Charge VGE = 5V 7 I C = I C Resistive Switching (5 C) VGE = 5V 5 I C = I C 5 Inductive Switching (5 C) LMP(Peak) =.66ES VGE = 5V 7 I C = I C. Turn-off Switching Energy TJ = +5 C. Ets Total Switching Losses R G = Ω 5 RG =Ω Turn-on Switching Energy nc 7 pf 9 C =.5ES 55 C =.ES Inductive Switching (5 C) LMP(Peak) =.66ES 65 VGE = 5V 9 I C = I C R G = Ω 7 Ets Total Switching Losses TJ = +5 C 5. gfe Forward Traconductance.5 S E = V, I C = 5 THERML ND MECHNL CHRCTERISTS (IGBT and FRED) RΘJC Junction to Case RΘJ Junction to mbient - WT 5-6 Rev D Characteristic. C/W Package Weight Repetitive Rating: Pulse width limited by maximum junction temperature. =, C = 5V, RGE = 5Ω, L = µh, Tj = 5 C See MIL-STD-75 Method 7 PT Reserves the right to change, without notice, the specificatio and information contained herein.. oz 5.9 gm

3 V VGE=7, 5 & V V V 9V V 7V TC=-55 C TC=+5 C TC=+5 C Cies C, CPCITNCE (pf), f = MHz Coes Cres... 5 Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage V V 9V V 7V LIMITED BY E (ST) µs ms TC =+5 C TJ =+5 C SINGLE PULSE ms Figure, Maximum Forward Safe Operating rea VGE, GTE-TO-EMITTER VOLTGE (VOLTS) 6 Figure, Typical Output VGE = 5V, VGE=7, 5 & V 6 Figure, Typical Output Characteristics (TJ = 5 C) OPERTION V 6 Figure, Typical Output Characteristics (TJ = 5 C) 5µSec. Pulse Test VGE = 5V (G) = TJ = +5 C 6 E=V E=V E =9V Qg, TOTL GTE CHRGE (nc) Figure 6, Gate Charges vs Gate-To-Emitter Voltage D= t SINGLE PULSE. -5 t - Duty Factor D = t/t Peak TJ = PDM x ZθJC + TC RECTNGULR PULSE DURTION (SECONDS) Figure 7, Maximum Effective Traient Thermal Impedance, Junction-To-Case vs Pulse Duration 5-6 Rev D. - Note:. PDM ZθJC, THERML IMPEDNCE ( C/W).5

4 Figure, Breakdown Voltage vs Junction Temperature.5 C =.66 ES VGE = +5V RG = Ω 5 C =.66 ES VGE = +5V TJ = +5 C = RG, GTE RESISTNCE (OHMS) Figure, Typical Switching Energy Losses vs Gate Resistance SWITCHING ENERGY LOSSES () TC, CSE TEMPERTURE ( C) Figure 9, Maximum Collector Current vs Case Temperature 6 SWITCHING ENERGY LOSSES () BES, COLLECTOR-TO-EMITTER BREKDOWN VOLTGE (NORMLIZED) Figure, Typical E(ST) Voltage vs Junction Temperature... TOTL SWITCHING ENERGY LOSSES () (G) E(ST), COLLECTOR-TO-EMITTER STURTION VOLTGE (VOLTS) 5. C =.66 ES VGE = +5V TJ = +5 C RG = Ω Figure, Typical Switching Energy Losses vs. Junction Temperature Figure, Typical Switching Energy Losses vs Collector Current 5-6 Rev D - For Both: Duty Cycle = 5% TJ = +5 C Tsink = +9 C Gate drive as specified Power dissapation = W ILOD = IRMS of fundamental.. F, FREQUENCY (KHz) Figure,Typical Load Current vs Frequency

5 (G) HRGE *DRIVER SME E S C =.66 ES Et s = E on + E off 9% B % B t d (on) t d(off) uh 9% E (ST) DRIVER* % RG V CLMP 9% % E on t=us E off Figure 5, Switching Loss Test Circuit and Waveforms E(off) VGE(on) V CC 9%.5 ES RL = I C % VGE(off) t d(off) Figure 6, Resistive Switching Time Test Circuit and Waveforms T-7 Package Outline.69 (.5) 5. (.9).9 (.59).9 (.9) e SC: Tin, Silver, Copper 5.9 (.) 6.6 (.6) 6.5 (.) BSC 5. (.) 6. (.). (.9).6 (.5).5 (.). (.5).5 (.77) Max..65 (.65). (.) 9. (.7). (.). (.). (.55). (.7).59 (.) 5.5 (.5) BSC -Plcs. Dimeio in Millimeters and (Inches) Gate Collector Emitter -. (.6).79 (.).7 (.). (.) 5-6 Rev D t d (on) Collector From Gate Drive Circuiy E(on) RG