APT37F50B APT37F50S. N-Channel FREDFET TYPICAL APPLICATIONS FEATURES. 500V, 37A, 0.15Ω Max, trr, 250ns. Absolute Maximum Ratings

Size: px
Start display at page:

Download "APT37F50B APT37F50S. N-Channel FREDFET TYPICAL APPLICATIONS FEATURES. 500V, 37A, 0.15Ω Max, trr, 250ns. Absolute Maximum Ratings"

Transcription

1 PT37F5B PT37F5 5, 37,.15Ω Max, trr, 25ns N-Channel FREDFET Power MO 8 is a high speed, high voltage N-channel switch-mode power MOFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in Z phase shifted bridge and other circuits through reduced t rr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C rss /C iss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. TO-247 D 3 PK PT37F5B PT37F5 ingle die FREDFET G D FETURE Fast switching with low EMI Low t rr for high reliability Ultra low C rss for improved noise immunity Low gate charge valanche energy rated RoH compliant TYPICL PPLICTION Z phase shifted and other full bridge Half bridge PFC and other boost converter Buck converter ingle and two switch forward Flyback bsolute Maximum Ratings ymbol Parameter Ratings Continuous Drain T C Continuous Drain T C = 1 C M Pulsed Drain Current Gate-ource oltage ±3 E ingle Pulse valanche Energy 2 78 mj I R valanche Current, Repetitive or Non-Repetitive 18 Thermal and Mechanical Characteristics ymbol Characteristic Min Typ Max P D Total Power T C 52 W R θjc R θc Junction to Case Thermal Resistance Case to ink Thermal Resistance, Flat, Greased urface C/W,T TG T L Operating and torage Junction Temperature Range oldering Temperature for 1 econds (1.6mm from case) C W T Torque Package Weight Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website oz g in lbf N m Rev D 8-211

2 tatic Characteristics unless otherwise specified PT37F5B_ ymbol BR(D) BR(D) / R D(on) (th) (th) / I G Parameter Drain-ource Breakdown oltage Breakdown oltage Temperature Coeffi cient Drain-ource On Resistance 3 Test Conditions =, = 25μ Reference to 25 C, = 25μ = 1, Min 5 Typ.6.13 Max.15 / C Ω Gate-ource Threshold oltage =, = 1m Threshold oltage Temperature Coeffi cient -1 m/ C Zero Gate oltage Drain Current = 6 25 = 1 μ Gate-ource Leakage Current = ±3 ±1 n Dynamic Characteristics ymbol Parameter g fs Forward Transconductance C iss Input Capacitance C rss Reverse Transfer Capacitance Output Capacitance C oss C o(cr) 4 C o(er) 5 Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related unless otherwise specified Test Conditions Min Typ Max = 5, =, = f = 1MHz 615 =, = to pf Q g Q gs Q gd t d(on) t r t d(off) t f Total Gate Charge Gate-ource Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time = to 1,, = 25 Resistive witching DD = 333, R G = 4.7Ω 6, GG = nc ns ource-drain Diode Characteristics ymbol Parameter Test Conditions Min Typ Max I I M D t rr Q rr I rrm dv/dt Continuous ource Current (Body Diode) Pulsed ource Current (Body Diode) 1 Diode Forward oltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt MOFET symbol showing the integral reverse p-n junction diode (body diode),, = 3 di D /dt = 1/μs DD = 1 18, di/dt 1/μs, DD = 333, G D ns μc /ns Rev D Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 tarting at, L = 4.81mH, R G = 25Ω, I. 3 Pulse test: Pulse Width < 38μs, duty cycle < 2%. 4 C o(cr) is defi ned as a fi xed capacitance with the same stored charge as C O with = 67% of (BR)D. 5 C o(er) is defined as a fixed capacitance with the same stored energy as C O with = 67% of (BR)D. To calculate C o(er) for any value of less than (BR)D, use this equation: C o(er) = -1.33E-7/^ E-8/ E R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein.

3 , GTE-TO-OURCE OLTGE () g fs, TRNCONDUCTNCE R D(ON), DRIN-TO-OURCE ON REITNCE = 1 = 12 = 3 = -55 C = 48 = -55 C = 15 C, REERE DRIN CURRENT () C, CPCITNCE (pf), DRIN CURRENT () > (ON) x R D(ON) MX. 25μEC. PULE <.5 % DUTY CYCLE = 15 C = 7 &, (ON) Figure 1, Output Characteristics Figure 2, Output Characteristics 2.5 NORMLIZED TO = = -55 C , JUNCTION TEMPERTURE ( C), GTE-TO-OURCE OLTGE () Figure 3, R D(ON) vs Junction Temperature Figure 4, Transfer Characteristics Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-ource oltage Q g, TOTL GTE CHRGE (nc) D, OURCE-TO-DRIN OLTGE () Figure 7, Gate Charge vs Gate-to-ource oltage Figure 8, Reverse Drain Current vs ource-to-drain oltage , C iss C oss C rss PT37F5B_ Rev D 8-211

4 PT37F5B_ M M R ds(on) μs 13μs 1μs 1ms 1 R 1μs 1ms ds(on) 1ms = 15 C 1 1ms 1ms T C DC line caling for Different Case & Junction T 1ms Temperatures: J T DC line = (TC ) *( - T C )/125 C = 75 C Figure 9, Forward afe Operating rea Figure 1, Maximum Forward afe Operating rea.25 D =.9 Z θjc, THERML IMPEDNCE ( C/W) INGLE PULE Note: P DM t 1 t 2 t 1 = Pulse Duration Duty Factor D = t1 /t 2 Peak = P DM x Z θjc + T C RECTNGULR PULE DURTION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration TO-247 (B) Package Outline e1 C: Tin, ilver, Copper D 3 PK Package Outline e3 1% n Plated Rev D (.185) 5.31 (.29) 1.49 (.59) 2.49 (.98).4 (.16) 1.16(.4) 2.21 (.87) 2.59 (.12) 2.8 (.819) (.845) 6.15 (.242) BC 4.5 (.177) Max (.78) 2.32 (.8) 1.1 (.4) 1.4 (.55) 5.45 (.215) BC 2-Plcs. Dimensions in Millimeters (Inches) (.61) (.64) 5.38 (.212) 6.2 (.244) 3.5 (.138) 3.81 (.15) 2.87 (.113) 3.12 (.123) 1.65 (.65) 2.13 (.84) Gate ource (Heat ink) 4.98 (.196) 5.8 (.2) 1.47 (.58) 1.57 (.62).46 (.18) {3 Plcs}.56 (.22).2 (.1).178 (.7) 2.67 (.15) 2.84 (.112) 1.22 (.48) 1.32 (.52) (.628) 16.5(.632) Revised 4/18/ (.5) 1.4 (.55) 1.98 (.78) 2.8 (.82) 5.45 (.215) BC {2 Plcs. } 1.4 (.41) 1.15(.45) (.543) 13.99(.551) ource Gate Dimensions in Millimeters (Inches) (.528) 13.51(.532) Revised 8/29/ (.15) 4.6 (.16) (Base of Lead) Heat ink (Drain) and Leads are Plated (.453) (.457)

5 Mouser Electronics uthorized Distributor Click to iew Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: PT37F5

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) APTGSBRDQ(G) APTGSSRDQ(G) V, A, (ON) =.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar

More information

TO-261 G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 500 V. Symbol Parameter Max SLB830S SLI830S R θjc

TO-261 G D S. T C = 25 C unless otherwise noted. Drain-Source Voltage 500 V. Symbol Parameter Max SLB830S SLI830S R θjc LB830 / LI830 500V N-Channel MOFET eneral Description This Power MOFET is produced using Maple semi s advanced planar stripe DMO technology. This advanced technology has been especially tailored to minimize

More information

Power MOSFET FEATURES. IRFB11N50APbF SiHFB11N50A-E3 IRFB11N50A SiHFB11N50A

Power MOSFET FEATURES. IRFB11N50APbF SiHFB11N50A-E3 IRFB11N50A SiHFB11N50A Power MOSFET IRFBN50, SiHFBN50 PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = V 0.52 Q g (Max.) (nc) 52 Q gs (nc) 3 Q gd (nc) 8 Configuration Single FETURES Low Gate Charge Q g Results in Simple Drive

More information

provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40

provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40 APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off

More information

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D I DM. Watts P D Linear Derating Factor W/ C T J. Amps E AR E AS UNIT BV DSS = 0V, I D

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D I DM. Watts P D Linear Derating Factor W/ C T J. Amps E AR E AS UNIT BV DSS = 0V, I D APTM35JVFR V A.35Ω POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density

More information

Power MOSFET. IRFP450APbF SiHFP450A-E3 IRFP450A SiHFP450A

Power MOSFET. IRFP450APbF SiHFP450A-E3 IRFP450A SiHFP450A IRFP450, SiHFP450 Power MOSFET PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 64 Q gs (nc) 16 Q gd (nc) 26 Configuration Single D FETURES Low Gate Charge Q g Results in Simple

More information

Power MOSFET FEATURES. IRFP064PbF SiHFP064-E3 IRFP064 SiHFP064 T C = 25 C

Power MOSFET FEATURES. IRFP064PbF SiHFP064-E3 IRFP064 SiHFP064 T C = 25 C Power MOFET PRODUCT UMMRY (V) 60 R D(on) (Ω) V G = 10 V 0.009 Q g (Max.) (nc) 190 Q gs (nc) 55 Q gd (nc) 90 Configuration ingle TO-27C G D ORDERING INFORMTION Package Lead (Pb)-free npb G D N-Channel MOFET

More information

HFI50N06A / HFW50N06A 60V N-Channel MOSFET

HFI50N06A / HFW50N06A 60V N-Channel MOSFET HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche

More information

Absolute Maximum Ratings

Absolute Maximum Ratings l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth

More information

IRF6215PbF HEXFET Power MOSFET

IRF6215PbF HEXFET Power MOSFET dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChannel Fully valanche Rated LeadFree Description Fifth Generation HEXFETs from International Rectifier utilize

More information

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V 40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge

More information

GP2M020A050H GP2M020A050F

GP2M020A050H GP2M020A050F Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP2M2A5H N-channel MOSFET BS R DS(on) 5V 18A

More information

Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR33) l Straight Lead (IRLU33) l dvanced Process Technology l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth Generation

More information

Power MOSFET FEATURES. IRFP240PbF SiHFP240-E3 IRFP240 SiHFP240

Power MOSFET FEATURES. IRFP240PbF SiHFP240-E3 IRFP240 SiHFP240 Power MOSFET PRODUCT SUMMRY V DS (V) 200 R DS(on) ( ) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO-247C S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb G

More information

Power MOSFET FEATURES. IRFP064PbF SiHFP064-E3 IRFP064 SiHFP064 T C = 25 C

Power MOSFET FEATURES. IRFP064PbF SiHFP064-E3 IRFP064 SiHFP064 T C = 25 C Power MOFET PRODUCT UMMRY (V) 60 R D(on) (Ω) V G = 10 V 0.009 Q g (Max.) (nc) 190 Q gs (nc) 55 Q gd (nc) 90 Configuration ingle TO-247C G D ORDERING INFORMTION Package Lead (Pb)-free npb G D N-Channel

More information

MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27Ω

MDQ18N50G N-Channel MOSFET 500V, 20.0A, 0.27Ω MDQ18N5 N-Channel MOFET 5V MDQ18N5 N-Channel MOFET 5V, 2.A,.27Ω. eneral Description These N-channel MOFET are produced using advanced MagnaChip s MOFET Technology, which provides low onstate resistance,

More information

Power MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A

Power MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A IRFP460, SiHFP460 Power MOSFET PRODUCT SUMMRY (V) 500 R DS(on) (Ω) = 0 V 0.27 Q g (Max.) (nc) 05 Q gs (nc) 26 Q gd (nc) 42 Configuration Single TO-247 S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier

More information

Super Junction MOSFET

Super Junction MOSFET 65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche

More information

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

HFP4N65F / HFS4N65F 650V N-Channel MOSFET HFP4N65F / HFS4N65F 650V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Key Parameters May 2016

More information

HCD80R1K4E 800V N-Channel Super Junction MOSFET

HCD80R1K4E 800V N-Channel Super Junction MOSFET HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power

More information

Power MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A

Power MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A IRFP60, SiHFP60 Power MOSFET PRODUCT SUMMRY (V) 500 R DS(on) (Ω) = 0 V 0.27 Q g (Max.) (nc) 05 Q gs (nc) 26 Q gd (nc) 2 Configuration Single TO-27 S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l dvanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated l LeadFree Description Fifth Generation HEXFETs from International Rectifier

More information

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS

More information

HCD80R650E 800V N-Channel Super Junction MOSFET

HCD80R650E 800V N-Channel Super Junction MOSFET HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

Super Junction MOSFET

Super Junction MOSFET APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv

More information

Power MOSFET FEATURES. Motor Drive. IRFPS40N60KPbF SiHFPS40N60K-E3 IRFPS40N60K SiHFPS40N60K T C = 25 C

Power MOSFET FEATURES. Motor Drive. IRFPS40N60KPbF SiHFPS40N60K-E3 IRFPS40N60K SiHFPS40N60K T C = 25 C Power MOSFET PRODUCT SUMMRY (V) 600 R DS(on) ( ) V GS = V 0. Q g (Max.) (nc) 330 Q gs (nc) 84 Q gd (nc) 50 Configuration Single D FETURES Low Gate Charge Q g Results in Simple Drive Requirement Improved

More information

HCA80R250T 800V N-Channel Super Junction MOSFET

HCA80R250T 800V N-Channel Super Junction MOSFET HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

GP1M018A020CG GP1M018A020PG

GP1M018A020CG GP1M018A020PG Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification GP1M18A2CG N-channel MOSFET BS R DS(on) MAX 2V 18A

More information

Power MOSFET FEATURES. IRFB20N50KPbF SiHFB20N50K-E3 IRFB20N50K SiHFB20N50K

Power MOSFET FEATURES. IRFB20N50KPbF SiHFB20N50K-E3 IRFB20N50K SiHFB20N50K Power MOSFET IRFB20N50K, SiHFB20N50K PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 0 V 0.2 Q g (Max.) (nc) 0 Q gs (nc) 33 Q gd (nc) 54 Configuration Single D TO-220 G G DS S FETURES Low Gate Charge Q

More information

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested

More information

Power MOSFET FEATURES. IRFP22N50APbF SiHFP22N50A-E3 IRFP22N50A SiHFP22N50A

Power MOSFET FEATURES. IRFP22N50APbF SiHFP22N50A-E3 IRFP22N50A SiHFP22N50A Power MOSFET IRFP22N50, SiHFP22N50 PRODUCT SUMMRY (V) 500 R DS(on) ( ) V GS = 10 V 0.23 Q g (Max.) (nc) 120 Q gs (nc) 32 Q gd (nc) 52 Configuration Single D TO-27C G FETURES Low Gate Charge Q g Results

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET

More information

AOT428 N-Channel Enhancement Mode Field Effect Transistor

AOT428 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor General Description The OT uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for

More information

AOD4132 N-Channel Enhancement Mode Field Effect Transistor

AOD4132 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor General Description The OD3 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is ideally

More information

GP2M005A050CG GP2M005A050PG

GP2M005A050CG GP2M005A050PG Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance N-channel MOSFET BS R DS(on) 5V.5A < 1.5W D-PAK I-PAK

More information

N-Channel 150-V (D-S) 175 C MOSFET

N-Channel 150-V (D-S) 175 C MOSFET N-Channel 5-V (D-S) 75 C MOSFET SUM4N5-38 PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D ().38 at V GS = V 4 5.42 at V GS = 6 V 38 FETURES TrenchFET Power MOSFETs 75 C Junction Temperature New Low Thermal Resistance

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l Logic-Level Gate Drive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully valanche Rated l Lead-Free Description Fifth Generation

More information

N-Channel Power MOSFET 900V, 4A, 4.0Ω

N-Channel Power MOSFET 900V, 4A, 4.0Ω N-Channel Power MOSFET 900V, 4A, 4.0Ω FEATURES Low R DS(ON) 4Ω (Max.) Low gate charge typical @ 25nC (Typ.) Improve dv/dt capability APPLICATION High efficiency switch mode power Supply Lighting KEY PERFORMANCE

More information

IRF530N PD HEXFET Power MOSFET V DSS = 100V. R DS(on) = 0.11Ω I D = 15A PRELIMINARY

IRF530N PD HEXFET Power MOSFET V DSS = 100V. R DS(on) = 0.11Ω I D = 15A PRELIMINARY HEXFET Power MOSFET dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD - 9.35 IRF530N V DSS = 00V R DS(on) = 0.Ω Description Fifth

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified WFW11N90 900V N-Channel MOSFET BS = 900 V R DS(on) typ = 0.93 Ω = 11 A FEATURES TO-3P Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances

More information

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω

MDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,

More information

TO-220FM. Not Recommended for. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500

TO-220FM. Not Recommended for. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500 R5005CNX Nch 500V 5A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 1.6Ω I D ±5A P D 40W lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS ) guaranteed to be ±30V.

More information

TO-220FM. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500

TO-220FM. lapplication Tape width (mm) - Type Switching Power Supply Basic ordering unit (pcs) 500 R5016ANX Nch 500V 16A Power MOSFET Datasheet V DSS 500V R DS(on) (Max.) 0.27Ω I D ±16A P D 50W loutline TO-220FM lfeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (V GSS )

More information

HCS80R1K4E 800V N-Channel Super Junction MOSFET

HCS80R1K4E 800V N-Channel Super Junction MOSFET HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power

More information

HCI70R500E 700V N-Channel Super Junction MOSFET

HCI70R500E 700V N-Channel Super Junction MOSFET HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C

Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S

More information

Power MOSFET FEATURES. IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N

Power MOSFET FEATURES. IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.24 Q g (Max.) (nc) 24 Q gs (nc) 40 Q gd (nc) 57 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D

More information

Base part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF

Base part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R

More information

Power MOSFET. IRFP450APbF SiHFP450A-E3 IRFP450A SiHFP450A

Power MOSFET. IRFP450APbF SiHFP450A-E3 IRFP450A SiHFP450A IRFP450, SiHFP450 Power MOSFET PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 64 Q gs (nc) 16 Q gd (nc) 26 Configuration Single D FETURES Low Gate Charge Q g Results in Simple

More information

Power MOSFET FEATURES APPLICATIONS. IRFS9N60APbF IRFS9N60ATRRPbF a IRFS9N60ATRLPbF a SiHFS9N60A-E3 SiHFS9N60ATR-E3 a SiHFS9N60ATL-E3 a

Power MOSFET FEATURES APPLICATIONS. IRFS9N60APbF IRFS9N60ATRRPbF a IRFS9N60ATRLPbF a SiHFS9N60A-E3 SiHFS9N60ATR-E3 a SiHFS9N60ATL-E3 a Power MOSFET IRFS9N60, SiHFS9N60 PRODUCT SUMMRY V DS (V) 600 R DS(on) () V GS = 0 V 0.75 Q g max. (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single D D 2 PK (TO-263) G FETURES Low gate charge Q g results

More information

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET Automotive P-Channel 4 V (D-) 75 C MOFET QJ45EP 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 2 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of

More information

Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )

Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize

More information

HCS80R380R 800V N-Channel Super Junction MOSFET

HCS80R380R 800V N-Channel Super Junction MOSFET HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply

More information

IRFP450LC PD HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.40Ω I D = 14A

IRFP450LC PD HEXFET Power MOSFET V DSS = 500V. R DS(on) = 0.40Ω I D = 14A HEXFET Power MOSFET PD - 9.23 IRFP450LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, C oss, C rss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive

More information

AOI472 N-Channel Enhancement Mode Field Effect Transistor

AOI472 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor General Description Features The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable

More information

PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) dvanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD 9.383 IRFP064N HEXFET Power MOSFET V DSS = 55V R DS(on)

More information

N-Channel 20-V (D-S) 175 C MOSFET

N-Channel 20-V (D-S) 175 C MOSFET N-Channel 2-V (D-S) 75 C MOSFET SUM6N2-3m9P PRODUCT SUMMRY V (BR)DSS (V) r DS(on) (Ω) I D () a.39 at V GS = V 6 2.52 at V GS = 4.5 V 6 FETURES TrenchFET Power MOSFET 75 C Junction Temperature % R g Tested

More information

IRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω

IRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International

More information

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUP/SUB85N- PRODUCT SUMMARY V (BR)DSS (V) r DS(on) (Ω) (A).5 at V GS = V.2 at V GS = 4.5 V 85 a FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature Available

More information

PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD 9.278B PRELIMINRY IRFN dvanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated HEXFET Power MOSFET V DSS = 55V R DS(on) = 0.02Ω I D = 72 Description

More information

Operating Junction and 55 to +175 C Storage Temperature Range

Operating Junction and 55 to +175 C Storage Temperature Range Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage

More information

HCS70R1K6 700V N-Channel Super Junction MOSFET

HCS70R1K6 700V N-Channel Super Junction MOSFET HCS70RK6 700 NChannel Super Junction MOSFET Features ery Low FOM (R DS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 00% valanche Tested Builtin ESD Diode pplication Switch

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche

More information

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.4 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.4 R JA Junction-to-Ambient ( PCB Mount) 50 C/W Features dvanced Planar Technology Low On-Resistance P-Channel Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS

More information

Power MOSFET FEATURES. IRFP27N60KPbF SiHFP27N60K-E3 IRFP27N60K SiHFP27N60K

Power MOSFET FEATURES. IRFP27N60KPbF SiHFP27N60K-E3 IRFP27N60K SiHFP27N60K Power MOSFET IRFP27N60K, SiHFP27N60K PRODUCT SUMMRY V DS (V) 600 R DS(on) ( ) V GS = V 8 Q g (Max.) (nc) 80 Q gs (nc) 56 Q gd (nc) 86 Configuration Single TO-27C S G D ORDERING INFORMTION Package Lead

More information

HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET

HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe

More information

Power MOSFET FEATURES DESCRIPTION. IRF720PbF SiHF720-E3 IRF720 SiHF720 T C = 25 C

Power MOSFET FEATURES DESCRIPTION. IRF720PbF SiHF720-E3 IRF720 SiHF720 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in) Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

More information

APT30M30B2FLL APT30M30LFLL

APT30M30B2FLL APT30M30LFLL POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

More information

TO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

TO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth

More information

Power MOSFET FEATURES DESCRIPTION. IRF840PbF SiHF840-E3 IRF840 SiHF840 T C = 25 C

Power MOSFET FEATURES DESCRIPTION. IRF840PbF SiHF840-E3 IRF840 SiHF840 T C = 25 C Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) () = 0.85 Q g max. (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single D TO-220AB G G DS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free

More information

IRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits

IRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l

More information

APT8052BLL APT8052SLL

APT8052BLL APT8052SLL APT82BLL APT82SLL 8V A.2Ω Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly

More information

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,

More information

HCD80R600R 800V N-Channel Super Junction MOSFET

HCD80R600R 800V N-Channel Super Junction MOSFET HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω

More information

HCS70R350E 700V N-Channel Super Junction MOSFET

HCS70R350E 700V N-Channel Super Junction MOSFET HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application

More information

HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET

HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested

More information

SMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF

SMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

More information

4N60 Series. N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION FEATURES. RoHS. Nell High Power Products. Page 1 of 10 PRODUCT SUMMARY

4N60 Series. N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION FEATURES. RoHS. Nell High Power Products.  Page 1 of 10 PRODUCT SUMMARY N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage

More information

P-Channel 100-V (D-S) MOSFET

P-Channel 100-V (D-S) MOSFET SUM9P-9L P-Channel -V (D-S) MOSFET PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D () Q g (Typ.).9 at V GS = - V - 9 -.2 at V GS = - 4.5 V - 85 97 nc FETURES TrenchFET Power MOSFET Compliant to RoHS Directive

More information

Power MOSFET FEATURES. IRL530PbF SiHL530-E3 IRL530 SiHL530 T C = 25 C. V GS at 5.0 V

Power MOSFET FEATURES. IRL530PbF SiHL530-E3 IRL530 SiHL530 T C = 25 C. V GS at 5.0 V Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.16 Q g (Max.) (nc) 28 Q gs (nc) 3.8 Q gd (nc) 14 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D

More information

Power MOSFET FEATURES. IRF740LCPbF SiHF740LC-E3 IRF740LC SiHF740LC T C = 25 C. V GS at 10 V

Power MOSFET FEATURES. IRF740LCPbF SiHF740LC-E3 IRF740LC SiHF740LC T C = 25 C. V GS at 10 V Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = V 0.55 Q g (Max.) (nc) 39 Q gs (nc) Q gd (nc) 19 Configuration Single FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V Rating

More information

MDS9652E Complementary N-P Channel Trench MOSFET

MDS9652E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,

More information

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

I, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A)

I, Drain-to-Source Current (A) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) I, Drain-to-Source Current (A) l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize

More information

Characteristic Value Units

Characteristic Value Units dvanced Power MOSFET SFP9630 FETURES valanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating rea Lower Leakage Current : -10 µ (Max.)

More information

Power MOSFET. IRFIB7N50APbF SiHFIB7N50A-E3 IRFIB7N50A SiHFIB7N50A T C = 25 C

Power MOSFET. IRFIB7N50APbF SiHFIB7N50A-E3 IRFIB7N50A SiHFIB7N50A T C = 25 C Power MOSFET IRFIB7N50, SiHFIB7N50 PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 0 V 0.52 Q g (Max.) (nc) 52 Q gs (nc) 3 Q gd (nc) 8 Configuration Single FETURES Low Gate Charge Q g Results in Simple

More information

IRL3102. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013Ω I D = 61A PRELIMINARY

IRL3102. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013Ω I D = 61A PRELIMINARY l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands

More information

T C =25 unless otherwise specified

T C =25 unless otherwise specified 800V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate

More information

KHB1D9N60I SEMICONDUCTOR TECHNICAL DATA. General Description IPAK(1)

KHB1D9N60I SEMICONDUCTOR TECHNICAL DATA. General Description IPAK(1) SEMICONDUCTOR TECHNIC DT KHB1D9N6D/I N CHNNE MOS FIED EFFECT TRNSISTOR eneral Description KHB1D9N6D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

More information

Base Part Number Package Type Standard Pack Orderable Part Number

Base Part Number Package Type Standard Pack Orderable Part Number V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits

More information

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C

FREDFET FAST RECOVERY BODY DIODE UNIT V DSS. Volts I D W/ C T J. Amps E AR = 0V, I D = 10V, I D = 88A) = 200V, V GS = 0V) = 160V, V GS = 0V, T C APT2M11JFLL 2V A.11Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to

More information

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices

More information

Power MOSFET FEATURES. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Power MOSFET FEATURES. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20 Power MOSFET PRODUCT SUMMARY V DS (V) 100 R DS(on) (Ω) = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated 175 C Operating

More information