KHB1D9N60I SEMICONDUCTOR TECHNICAL DATA. General Description IPAK(1)

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1 SEMICONDUCTOR TECHNIC DT KHB1D9N6D/I N CHNNE MOS FIED EFFECT TRNSISTOR eneral Description KHB1D9N6D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FETURES S = 6V, I D = 1.9 Drain-Source ON Resistance : R DS(ON) S = 1V Qg(typ.) = 1.9nC M C F F D B E K H J N DIM MIIMETERS 6.6 +_.2 B 6.1 +_.2 C _.3 D.7 +_.2 E 2.7 +_.2 F 2.3 +_.2.96 MX H 2.3 +_.1 J.5 +_.1 K 1.2 +_.2.5 +_.1 M.8 +_.2 N.55 MIN MXIMUM RTIN (Tc=25 ) CHRCTERISTIC RTIN SYMBO KHB1D9N6D KHB1D9N6I Drain-Source Voltage S 6 V ate-source Voltage V SS 3 V UNIT C DPK (1) KHB1D9N6I H J Drain Current Single Pulsed valanche Energy (Note 2) Repetitive valanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power C =25 I D 1.9 C = Pulsed (Note1) I DP * E S 12 mj E R 4.4 mj dv/dt 4.5 V/ns Tc=25 P D W Derate above W/ Maximum Junction Temperature T j 15 M N F F K E B D P DIM B C D E F H J K M N P MIIMETERS 6.6 +_ _ _.3.7 +_ _ _ _ _.1.5 +_ _.2.5 +_ _.1.96 MX 1.2 +_.3 Storage Temperature Range T stg Thermal Characteristics Thermal Resistance, Junction-to-Case R thjc /W Thermal Resistance, Case-to-Sink R thcs 5 5 /W IPK(1) Thermal Resistance, Junction-to- mbient R thj 11 /W D * : Drain current limited by maximum junction temperature. S 1/6

2 EECTRIC CHRCTERISTICS (Tc=25 ) CHRCTERISTIC SYMBO TEST CONDITION MIN. TYP. MX. UNIT Static Drain-Source Breakdown Voltage BS I D =25, V S =V V Breakdown Voltage Temperature Coefficient BS / T j I D =25, Referenced to V/ Drain Cut-off Current I DSS =6V, V S =V, ate Threshold Voltage V th =V S, I D = V ate eakage Current I SS V S = 3V, =V n Drain-Source ON Resistance R DS(ON) V S =1V, I D = Dynamic Total ate Charge Q g =48V, I D =1.9 ate-source Charge Q gs V S =1V (Note4,5) nc ate-drain Charge Q gd Turn-on Delay time t d(on) V Turn-on Rise time t DD=3V r R =158 Turn-off Delay time t d(off) R =25 (Note4,5) ns Turn-off Fall time t f Input Capacitance C iss Reverse Transfer Capacitance C rss VDS=25V, =V, f=1.mhz pf Output Capacitance C oss Source-Drain Diode Ratings Continuous Source Current I S V S <V th Pulsed Source Current I SP Diode Forward Voltage V SD I S =1.9, V S =V V Reverse Recovery Time t rr IS =1.9, V S =V, ns Reverse Recovery Charge Q rr dis/dt=1/ s C Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) = 36.9mH, I S =1.9, V DD =5V, R = 25, Starting T j =25. Note 3) I S 1.9, di/dt 1/, V DD BS, Starting T j =25. Note 4) Pulse Test : Pulse width 3, Duty Cycle 2%. Note 5) Essentially independent of operating temperature. 2/6

3 I D - I D - V S Drain Current I D () 1-1 V S TOP : 15. V 1. V 8. V 7. V 6. V 5.5 V 5. V Bottom : 4.5V Drain Current I D () 15 C 25 C -55 C Drain - Source Voltage (V) ate - Source Voltage V S (V) BS - Tj R DS(ON) - I D Normalized Breakdown Voltage BS V S = V I DS = On - Resistance R DS(ON) (Ω) V S = 1V V S = 2V Junction Temperature Tj ( ) C Drain Current I D () I S - V SD R DS(ON) - Tj Reverse Drain Current I S () 15 C 25 C Normalized On Resistance V S = 1V I DS = Source - Drain Voltage V SD (V) Junction Temperture Tj ( C) 3/6

4 C - Qg - V S Capacitance (pf) 7 6 C iss 5 4 C oss 3 2 C rss Frequency = 1MHz ate - Source Voltage (V) I D =1.9 = 12V = 3V = 48V Drain - Source Voltage (V) ate - Charge Qg (nc) Safe Operation rea I D - T j Drain Current ID () 1-1 Operation in this area is limited by R DS(ON) 1µs T c = 25 C T j = 15 C Single nonrepetitive pulse µs 1µs DC Drain Current I D () Drain - Source Voltage (V) Junction Temperature Tj ( C) R th Normalized Transient Thermal Resistance Duty= Single Pulse - Duty Factor, D= t 1 /t 2 T j(max) - T c - R thjc = P D P DM t 1 t 2 Square Wave Pulse Duration (sec) 4/6

5 - ate Charge ID Fast Recovery Diode 1 V.8 S ID 1. m Qgs Qgd Qg Q - Single Pulsed valanche Energy 1 E S = I 2 2 S BS BS - V DD BS I S.5 S 25Ω I D (t) 1 V V DD (t) t p Time - Resistive oad Switching 9% R.5 S V 1% S 25 Ω t d(on) t r t d(off) t f 1V t on t off 5/6

6 - Source - Drain Diode Reverse Recovery and dv /dt IF DUT VDS I SD (DUT) Body Diode Forword Current di/dt IRM IS Body Diode Reverse Current.8 x S driver VDS (DUT) V SD Body Diode Recovery dv/dt VDD 1V Body Diode Forword Voltage drop 6/6