4N60 Series. N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION FEATURES. RoHS. Nell High Power Products. Page 1 of 10 PRODUCT SUMMARY

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1 N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. D D S TO-25 (I-PAK) (4N60F) D S TO-252 (D-PAK) (4N60) FEATURES D R DS(ON) = 2.5Ω@ = V Ultra low gate charge(20nc max.) Low reverse transfer capacitance (C = 8pF typical) RSS Fast switching capability % avalanche energy specified Improved dv/dt capability 50 C operation temperature D DS S TO-220AB (4 N60A) TO-220F (4N60AF) D (Drain) PRODUCT SUMMARY I (A) D 4 S (V) 600 R DS(ON) (Ω) Q (nc) max. V = V S 20 (ate) S (Source) Page of

2 ABSOLUTE MAXIMUM RATINS (T = 25 C unless otherwise specified) C SYMBOL S V DR Drain to Source voltage Drain to ate voltage PARAMETER TEST CONDITIONS T =25 C to 50 C J R S=20KΩ VALUE UNIT V ate to Source voltage ±30 I D I DM Continous Drain Current Pulsed Drain current(note ) T =25 C C T = C C A I AR Avalanche current(note ) 4 E AR Repetitive avalanche energy(note ) I AR=4A, R S=50Ω, =V E AS Single pulse avalanche energy (Note 2) I AS=4A, L = 30mH mj dv/dt Peak diode recovery dv/dt(note 3) 4.5 V /ns TO-25/ TO (0.39) P D Total power dissipation (Derate above 25 C) T =25 C C TO-220AB (0.8) W(W/ C) TO-220F 36 (0.26) T J Operation junction temperature -55 to 50 T ST Storage temperature -55 to 50 ºC T L Maximum soldering temperature, for seconds.6mm from case Mounting torque, #6-32 or M3 screw (.) lbf in (N m).repetitive rating: pulse width limited by junction temperature. 2.I AS = 4A, V DD = 50V, L = 30mH, R S = 25Ω, starting T J=25 C. 3.I SD 4A, di/dt 200A/µs, V DD V (BR)DSS, starting T J=25 C. THERMAL RESISTANCE SYMBOL PARAMETER Min. Typ. Max. UNIT TO-25/ TO R th(j-c) Thermal resistance, junction to case TO-220AB.2 TO-220F TO-25/TO ºC/W R th(j-a) Thermal resistance, junction to ambient TO-220AB 62.5 TO-220F Page 2 of

3 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) C SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT OFF CHARACTERISTICS V (BR)DSS V (BR)DSS/ I DSS T J Drain to source breakdown voltage Breakdown voltage temperature coefficient Drain to source leakage current I D = 250µA, = 0V I D = 250µA, = VS =600V, =0V T C = 25 C =480V, =0V T =25 C C V V/ºC μa I SS ate to source forward leakage current ate to source reverse leakage current = 30V, = 0V = -30V, = 0V - na ON CHARACTERISTICS R DS(ON) Static drain to source on-state resistance I D = 2A, = V (TH) ate threshold voltage =, I D=250μA g FS Forward transconductance =40V, l D=2A DYNAMIC CHARACTERISTICS Ω 4.0 V 4.7 S C ISS Input capacitance C OSS Output capacitance = 25V, = 0V, f =MHz pf C RSS Reverse transfer capacitance 8.0 SWITCHIN CHARACTERISTICS t d(on) Turn-on delay time 3 35 t r t d(off) Rise time Turn-off delay time V DD = 300V, = V, I D = 4A, R S = 25Ω(Note, 2) ns t f Fall time Q Total gate charge 5 Q S ate to source charge V DD = 480V, = V, I D = 4A (Note, 2) 3.5 Q D ate to drain charge (Miller charge) nc SOURCE TO DRAIN DIODE RATINS AND CHARACTERISTICS (T C = 25 C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT V SD Is (IsD) Diode forward voltage Continous source to drain current I SD = 4A, = 0V Integral reverse P-N junction diode in the MOSFET D (Drain).4 4 V I SM Pulsed source current (ate) 6 A S (Source) t rr Q rr Reverse recovery time Reverse recovery charge I SD = 4A, = 0V, di F/dt = A/µs ns μc. Pulse test: Pulse width 300µs, duty cycle 2%. 2. Essentially independent of operating temperature. Page 3 of

4 ORDERIN INFORMATION SCHEME 4 N 60 A Current rating, I D 4 = 4A MOSFET series N = N-Channel Voltage rating, 60 = 600V Package type A = TO-220AB AF = TO-220F F = TO-25(I-PAK) = TO-252(D-PAK) TEST CIRCUITS AND WAVEFORMS Fig.A Peak diode recovery dv/dt test circuit Fig.B Peak diode recovery dv/dt waverforms + - D.U.T. + - L (Driver) l SD (D.U.T) P.W. Period D= l FM, Body Diode forward current P.W. Period di/dt V =V S l RM R Same Type as D.U.T. Driver * dv/dt controlled by R * lsd controlled by pulse period * D.U.T.-Device under test VDD (D.U.T) Body Diode Reverse Current Body Diode Recovery dv/dt V DD Body Diode Forward Voltage Drop Page 4 of

5 TEST CIRCUITS AND WAVEFORMS(Cont.) Fig.2A Switching test circuit Fig.2B Switching Waveforms R L 90% R D.U.T. V DD % V t d(on) t R t d(off) Pulse Width µs Duty Factor % t F Fig.3A ate charge test circuit Fig.3B ate charge waveform 2V 0.2µF 50kΩ 0.3µF Same Type as D.U.T. V Q Q S Q D D.U.T. 3mA Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L BS l AS R V DD l D(t) V D.U.T. V DD (t) t p Time t p Page 5 of

6 TYPICAL CHARACTERISTICS.2 Fig. Breakdown voltage variation vs. Temperature 3.0 Fig.2 On-Resistance variation vs. junction vs. temperature Drain-Source Breakdown voltage, BS (Normalized)(V) VS = 0V 2. ld = 250µA Drain-Source On-Resistance, R DS(ON) (Normalized) VS = V 2. ld = 2A Junction temperature, T j ( C) Junction-Temperature, T J ( C) Fig.3- Maximum Safe operating area (for 4N60A) Fig.3-2 Maximum Safe operating area (for 4N60AF) Operation in This Area is Limited by R DS(ON) Operation in This Area is Limited by R DS(ON) Drain Current, l D (A) µs ms ms 0 DC. TJ = 25 C 2. TJ = 50 C 3. Single Pulse 2 3 Drain Current, l D (A) 0 DC µs ms ms ms. TJ = 25 C 2. TJ = 50 C 3. Single Pulse Drain-Source voltage, (V) Drain-Source voltage, (V) Fig.3-3 Maximum Safe operating area (for 4N60F/4N60) Fig.4 Maximum drain current vs. Case temperature 5 Operation in This Area is Limited by R DS(ON) Drain Current, l D (A) 0 ms ms DC µ s µs. TJ = 25 C 2. TJ = 50 C 3. Single Pulse Drain current, l D (A) Drain-Source voltage, (V) Case temperature, T ( C) C Page 6 of

7 TYPICAL CHARACTERISTICS Fig.5 On-State characteristics Fig.6 Transfer characteristics Drain Current, l D (A) Top: V 9V 8V 7V 6V 5.5V Bottorm: 5.0V V 8V 6V 5V. 250µs Pulse Test 2. TC = 25 C Drain current, l D (A) 50 C 25 C. = 50V µs Pulse Test Drain-to-Source voltage, V (V) DS ate-source voltage, V (V) S Fig.7 On-Resistance variation vs drain current and gate voltage Fig.8 Body diode forward voltage variation vs. source current and temperature Drain-Source On-Resistance, R DS(ON) (Ω) T C = 25 C V = V S V = 20V S Reverse drain current, l DR (A) 50ºC 25ºC VS = 0V µs Test Drain current, I (A) D Source-Drain voltage, V (V) SD Fig.9 Capacitance characteristics (Non-Repetitive) Fig. ate charge characteristics 200 C iss = C gs +Cgd ( C ds = shorted ) C oss = C ds +Cgd C rss = C gd 2 Capacitance (pf) C iss C oss C rss 0. VS = 0V 2. f = MHz ate-source voltage, (V) = 20V = 300V = 480V 2. l D = 4A Drain-Source voltage, V (V) DS Total gate charge, Q (nc) Page 7 of

8 TYPICAL CHARACTERISTICS Fig.- Transient thermal response curve for 4N60A Thermal response, R th(j-c) (t) D = Single pulse -3-2 P DM Notes: t t 2. Rth(j-c) (t) =.20 C/W Max. 2. Duty factor, D = t / t 2 3. T JM - T C = P DM * R th(j-c) (t) Square wave pulse duration, t (sec) Fig.-2 Transient thermal response curve for 4N60AF Thermal response, R th(j-c) (t) D = Single pulse -3-2 P DM Notes: t t 2. Rth(j-c) (t) = 3.50 C/W Max. 2. Duty factor, D = t / t 2 3. T JM - T C = P DW * R th(j-c) (t) Square wave pulse duration, t (sec) Fig.-3 Transient thermal response curve (for 4N60F/4N60) Thermal response, R th(j-c) (t) 0 D = Single pulse P DM Notes: t t 2. Rth(j-c) (t) = 2.5 C/W Max. 2. Duty factor, D = t / t 2 3. T JM - T C = P DW * R th(j-c) (t) Square wave pulse duration, t (sec) Page 8 of

9 TYPICAL CHARACTERISTICS Case Style TO-25 (I-PAK) 5.4(0.22) 5.2(0.204) 6.6(0.26) 6.4(0.52).5(0.059).37(0.054) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.09) 6.2(0.244) 6(0.236) 6.3(0.64) 5.9(0.626).9(0.075).8(0.07) 9.4(0.37) 9(0.354) 0.85(0.033) 0.76(0.03) 4.6(8) 4.4(73) 0.65(0.026) 0.55(0.02) 0.62(0.024) 0.45(0.07) TO-252 (D-PAK) 6.6(0.259) 6.4(0.25) 2.4(0.095) 2.2(0.086) 5.4(0.22) 5.2(0.204).5(0.059).37(0.054) 0.62(0.024) 0.48(0.09) (0.368) (0.397) 6.2(0.244) 6(0.236).4(0.045) 0.76(0.030) 2.28(0.090) 0.89(0.035) 0.64(0.025) 4.57(80) 0.62(0.024) 0.45(0.07) TO-220AB.54 (0.45) MAX (0.370) 9.4 (0.360) 3.9 (54) 3.74 (48) 2.87 (3) 2.62 (03) 4.70 (85) 4.44 ( 754).39 (0.055).4 (0.045) 4.06 (60) 3.56 (40).45 (0.057).4 (0.045) 2.67 (05) 2.4 (0.095) PIN (0.635) 5.87 (0.625) 0.90 (0.035) 0.70 (0.028) 2.65 (04) 2.45 (0.096) 5.20 (0.205) 4.95 (95) 3.68 (45) 3.43 (35) 8.89 (0.350) 8.38 (0.330) 29.6 (.48) (.8) 4.22 (0.560) 3.46 (0.530) 0.56 (0.022) 0.36 (0.04) 5.32 (0.603) 4.55 (0.573) 2.79 () 2.54 (0.) (ate) D (Drain) S (Source) All dimensions in millimeters(inches) Page 9 of

10 Case Style TO-220F TYP TYP D (Drain) (ate) All dimensions in millimeters S (Source) Page of