Power MOSFET FEATURES. IRFP27N60KPbF SiHFP27N60K-E3 IRFP27N60K SiHFP27N60K
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1 Power MOSFET IRFP27N60K, SiHFP27N60K PRODUCT SUMMRY V DS (V) 600 R DS(on) ( ) V GS = V 8 Q g (Max.) (nc) 80 Q gs (nc) 56 Q gd (nc) 86 Configuration Single TO-27C S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb G D S N-Channel MOSFET FETURES Low Gate Charge Q g Results in Simple Drive Requirement Improved Gate, valanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and valanche Voltage and Current Enhanced Body Diode dv/dt Capability Compliant to RoHS Directive 2002/95/EC PPLICTIONS Hard Switching Primary or PFC Switch Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Motor Drive TO-27C IRFP27N60KPbF SiHFP27N60K-E3 IRFP27N60K SiHFP27N60K vailable RoHS* COMPLINT BSOLUTE MXIMUM RTINGS (T C = 25 C, unless otherwise noted) PRMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 Continuous Drain Current V GS at V T C = 25 C 27 I D T C = 0 C 8 Pulsed Drain Current a I DM Linear Derating Factor.0 W/ C Single Pulse valanche Energy b E S 530 mj Repetitive valanche Current a I R 27 Repetitive valanche Energy a E R 50 mj Maximum Power Dissipation T C = 25 C P D 500 W Peak Diode Recovery dv/dt c dv/dt 3 V/ns Operating Junction and Storage Temperature Range T J, T stg - 55 to 50 Soldering Recommendations (Peak Temperature) for s 300 d C Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Starting T J = 25 C, L =. mh, R g = 25, I S = 27, dv/dt = 3 V/ns (see fig. 2). c. I SD 27, di/dt 390 /μs, V DD V DS, T J 50 C. d..6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply lbf in. N m Document Number: S-087-Rev. C, 2-Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
2 IRFP27N60K, SiHFP27N60K THERML RESISTNCE RTINGS PRMETER SYMBOL TYP. MX. UNIT Maximum Junction-to-mbient R thj - 0 Case-to-Sink, Flat, Greased Surface R thcs C/W Maximum Junction-to-Case (Drain) R thjc SPECIFICTIONS (T J = 25 C, unless otherwise noted) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 μ V V DS Temperature Coefficient V DS /T J Reference to 25 C, I D = m mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250 μ V Gate-Source Leakage I GSS V GS = ± 30 V - - ± 0 n V DS = 600 V, V GS = 0 V Zero Gate Voltage Drain Current I DSS V DS = 80 V, V GS = 0 V, T J = 25 C μ Drain-Source On-State Resistance R DS(on) V GS = V I D = 6 b Forward Transconductance g fs V DS = 50 V, I D = S Dynamic Input Capacitance C iss V GS = 0 V Output Capacitance C oss V DS = 25 V Reverse Transfer Capacitance C rss f =.0 MHz, see fig pf V GS = 0 V V DS =.0 V, f =.0 MHz Output Capacitance C oss V GS = 0 V V DS = 80 V, f =.0 MHz Effective Output Capacitance C oss eff. V GS = 0 V V DS = 0 V to 80 V Total Gate Charge Q g I D = 27, V DS = 80 V Gate-Source Charge Q gs V GS = V nc see fig. 6 and 3 b Gate-Drain Charge Q gd Turn-On Delay Time t d(on) Rise Time t r V DD = 300 V, I D = Turn-Off Delay Time t d(off) R g =.3, V GS = V, see fig. b ns Fall Time t f Drain-Source Body Diode Characteristics D Continuous Source-Drain Diode Current I S MOSFET symbol showing the G integral reverse Pulsed Diode Forward Current a I SM S p - n junction diode - - T b J Body Diode Voltage V SD T J = 25 C, I S = 27, V GS = 0 V b V Body Diode Reverse Recovery Time t rr ns Body Diode Reverse Recovery Charge Q rr = 25 C, I F = 27, di/dt = 0 /μs - 6 μc Reverse Recovery Current I RRM Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 300 μs; duty cycle 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 % to 80% V DS. Document Number: S-087-Rev. C, 2-Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
3 I D, Drain-to-Source Current () I D, Drain-to-Source Current () I D, Drain-to-Source Current (Α ) IRFP27N60K, SiHFP27N60K TYPICL CHRCTERISTICS (25 C, unless otherwise noted) 00 0 VGS TOP 5V 2V V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V T J = 50 C V 20µs PULSE WIDTH Tj = 25 C 0 V DS, Drain-to-Source Voltage (V) Fig. - Typical Output Characteristics.00 T J = 25 C 0. V DS = 0V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics 0 VGS TOP 5V 2V V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 5.0V 20µs PULSE WIDTH Tj = 50 C 0 V DS, Drain-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 3.5 I D = V GS = V T J, Junction Temperature ( C) Fig. 2 - Typical Output Characteristics Fig. - Normalized On-Resistance vs. Temperature Document Number: S-087-Rev. C, 2-Mar- 3 THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
4 I D, Drain-to-Source Current () IRFP27N60K, SiHFP27N60K 0000 V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED 00 C rss = C gd C, Capacitance(pF) C oss = C ds C gd Ciss Coss Crss I SD, Reverse Drain Current () 0 T J= 50 C T J= 25 C 0 00 V DS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage V GS= 0 V V SD,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage V GS, Gate-to-Source Voltage (V) I D = 28 V DS = 80V V DS = 300V V DS = 20V Q G, Total Gate Charge (nc) 00 0 OPERTION IN THIS RE LIMITED BY R DS (on) 0µsec msec Tc = 25 C Tj = 50 C msec Single Pulse V DS, Drain-toSource Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating rea Document Number: 929 S-087-Rev. C, 2-Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
5 IRFP27N60K, SiHFP27N60K 30 V DS R D 25 R G V GS D.U.T. - V DD I D, Drain Current () 20 5 V Pulse width µs Duty factor % Fig. a - Switching Time Test Circuit 5 V DS 90 % T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. b - Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERML RESPONSE) P DM t t 2 Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc T C t, Rectangular Pulse Duration (s) Fig. - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: S-087-Rev. C, 2-Mar- 5 THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
6 IRFP27N60K, SiHFP27N60K V DS 5 V t p V DS L Driver R G D.U.T - V DD I S 20 V I t p Ω S Fig. 2a - Unclamped Inductive Test Circuit Fig. 2b - Unclamped Inductive Waveforms TOP BOTTOM I D E S, Single Pulse valanche Energy (mj) Starting Tj, Junction Temperature ( C) Fig. 2c - Maximum valanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 50 kω V GS 2 V 0.2 µf 0.3 µf Q GS Q GD D.U.T. V - DS V G V GS Charge Fig. 3a - Basic Gate Charge Waveform 3 m Fig. 3b - Gate Charge Test Circuit I G I D Current sampling resistors Document Number: S-087-Rev. C, 2-Mar- THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
7 IRFP27N60K, SiHFP27N60K Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period V GS = V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. V DS waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. - For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: S-087-Rev. C, 2-Mar- 7 THE PRODUCT DESCRIBED HEREIN ND THIS DTSHEET RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
8 TO-27C (High Voltage) Package Information 3 B R/2 Q E E/2 S 2 7 ØP (Datum B) Ø k M D B M ØP D2 2 x R (2) D D 2 3 D Thermal pad 5 L C 2 x b2 3 x b 0. M C M b Lead ssignments. Gate 2. Drain 3. Source. Drain 2 x e L See view B C DDE (b, b2, b) () Section C - C, D - D, E - E MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX D E E b e 5.6 BSC 0.25 BSC b Ø k b L b L b N 7.62 BSC BSC b Ø P c Ø P c Q D R D S 5.5 BSC 0.27 BSC ECN: X3-03-Rev. D, 0-Jul-3 DWG: 597 Notes. Dimensioning and tolerancing per SME Y.5M Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 27 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions D and E. 5. Lead finish uncontrolled in L. 6. Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (5"). 7. Outline conforms to JEDEC outline TO-27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E M D B M View - (b, b3, b5) Base metal c Revision: 0-Jul-3 Document Number: 9360 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T
9 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 207 VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 900
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 150 Q gs (nc) 20 Q gd (nc) 80 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) ( ) = 0 V. Q g (Max.) (nc) 38 Q gs (nc).0 Q gd (nc) Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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D Series Power MOSFET SiHG25ND PRODUCT SUMMRY (V) at T J max. 5 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO27C S G D ORDERING INFORMTION Package
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N-Channel 2-V (D-S) 75 C MOSFET SUM6N2-3m9P PRODUCT SUMMRY V (BR)DSS (V) r DS(on) (Ω) I D () a.39 at V GS = V 6 2.52 at V GS = 4.5 V 6 FETURES TrenchFET Power MOSFET 75 C Junction Temperature % R g Tested
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Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
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P-Channel 6-V (D-S) 75 C MOSFET SUMP6-7L PRODUCT SUMMRY V DS (V) r DS(on) (Ω) I D () d.69 at V GS = - V - - 6.88 at V GS = - 4.5 V - FETURES TrenchFET Power MOSFET Package with Low Thermal Resistance vailable
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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E Series Power MOSFET SiHG73N6E PRODUCT SUMMRY (V) at T J max. 65 R DS(on) max. at 25 C (Ω) V GS = V.39 Q g max. (nc) 362 Q gs (nc) 8 Q gd (nc) 98 Configuration Single TO27C S G D ORDERING INFORMTION Package
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 3.0 Q g (Max.) (nc) 4 Q gs (nc) 3.3 Q gd (nc) 13 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.26 Q g (Max.) (nc) 20 Q gs (nc) 34 Q gd (nc) 54 Configuration Single D TO220 G G DS S NChannel MOSFET ORDERING INFORMATION Package Lead
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Power MOFET PRODUCT UMMRY (V) 60 R D(on) (Ω) V G = 10 V 0.009 Q g (Max.) (nc) 190 Q gs (nc) 55 Q gd (nc) 90 Configuration ingle TO-27C G D ORDERING INFORMTION Package Lead (Pb)-free npb G D N-Channel MOFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 0.27 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
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D Series Power MOSFET SiHGN5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V. Q g (Max.) (nc) 58 Q gs (nc) 8 Q gd (nc) Configuration Single TO27C S G D ORDERING INFORMTION Package
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SUM5P-42 P-Channel V (D-S) MOSFET PRODUCT SUMMRY V DS (V) R DS(on) ( ) Max. I D () Q g (Typ.) -.42 at V GS = - V - 36.47 at V GS = - 4.5 V - 29 54 TO-263 FETURES TrenchFET Power MOSFET % R g and UIS Tested
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SUM25P-38 P-Channel V (D-S) MOSFET PRODUCT SUMMRY V DS (V) R DS(on) ( ) Max. I D () c Q g (Typ.).38 at V GS = - V - 6.3 -.4 at V GS = - 7.5 V - 6. 24 nc.42 at V GS = - 6 V - 6. FETURES TrenchFET Power
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D Series Power MOSFET IRFP6B, SiHG6B PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C () V GS = V.25 Q g max. (nc) 7 Q gs (nc) Q gd (nc) 28 Configuration Single TO27C S G D ORDERING INFORMTION Package
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Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) () = 10 V 1. Q g max. (nc) 39 Q gs (nc) 10 Q gd (nc) 19 Configuration Single D TO0AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) () V GS = 10 V 11 Q g max. (nc) 38 Q gs (nc) 4.9 Q gd (nc) 22 Configuration Single D TO220AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.3 Q g max. (nc) 25 Q gs (nc) 23 Q gd (nc) 37 Configuration Single Super247 S D G ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) ( ) = 3.6 Q g (Max.) (nc) 17 Q gs (nc) 3.4 Q gd (nc) 8.5 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) max. () = 10 V 0.80 Q g max. (nc) 9 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single S TO0AB G G DS D PChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
More informationPower MOSFET FEATURES. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY V DS (V) 100 R DS(on) (Ω) = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated 175 C Operating
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.10 Q g max. (nc) 25 Q gs (nc) 5.8 Q gd (nc) 11 Configuration Single D FEATURES Dynamic dv/dt rating 175 C operating temperature Fast switching
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Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) (Ω) V GS = V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single TO220 G D S ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
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EF Series Power MOSFET with Fast Body Diode SiHG7N6EF PRODUCT SUMMRY (V) at T J max. 65 R DS(on) typ. at 25 C () V GS = 1 V.33 Q g (Max.) (nc) 38 Q gs (nc) 62 Q gd (nc) 12 Configuration Single TO27C S
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) = 10 V 0.14 Q g (Max.) (nc) 34 Q gs (nc) 9.9 Q gd (nc) 16 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) () = 10 V 0.50 Q g max. (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single S TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
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IRF961, SiHF961 Power MOSFET PRODUCT SUMMARY (V) R DS(on) (Ω) = 1 V 3. Q g (Max.) (nc) 11 Q gs (nc) 7. Q gd (nc) 4. Configuration Single TO G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.16 Q g (Max.) (nc) 6 Q gs (nc) 5.5 Q gd (nc) 11 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single D HVMDIP G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead
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EF Series Power MOSFET with Fast Body Diode SiHG7N6EF PRODUCT SUMMRY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = 1 V.65 Q g max. (nc) 228 Q gs (nc) 32 Q gd (nc) 62 Configuration Single TO27C S G
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Power MOSFET, 90 A VSFB90SA0 SOT227 PRIMARY CHARACTERISTICS V DSS 00 V I D DC 90 A R DS(on) 6.5 m Type Modules MOSFET Package SOT227 FEATURES Fully isolated package Very low onresistance Fully avalanche
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Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) (Ω) V GS = 10 V 3.5 Q g (Max.) (nc) 120 Q gs (nc) 16 Q gd (nc) 65 Configuration Single TO247AC S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
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Power MOSFET PRODUCT SUMMARY (V) 900 R DS(on) ( ) V GS = 10 V 3.7 Q g (Max.) (nc) 78 Q gs (nc) 10 Q gd (nc) 42 Configuration Single D D 2 PAK (TO263) G G D S ORDERING INFORMATION Package Lead (Pb)free
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 1.5 Q g (Max.) (nc) 38 Q gs (nc) 5.0 Q gd (nc) 22 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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D Series Power MOSFET SiHG32N5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.5 Q g max. (nc) 96 Q gs (nc) 8 Q gd (nc) 29 Configuration Single TO247C S G D ORDERING INFORMTION Package
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D Series Power MOSFET TO22 FULLPAK D G S G D S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.28 Q g max. (nc) 76 Q gs (nc) Q gd (nc) 7 Configuration Single ORDERING
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D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V 3.2 Q g max. (nc) 2 Q gs (nc) 2 Q gd (nc) 3 Configuration Single DPAK (TO252) D G ORDERING INFORMATION
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Power MOSFET PRODUCT SUMMARY V DS (V) 60 R DS(on) (Ω) V GS = 10 V 0.8 Q g (Max.) (nc) 7 Q gs (nc) 2 Q gd (nc) 7 Configuration Single D HVMDIP FEATURES For Automatic Insertion Compact Plastic Package End
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Max.) (Ω) = 0.80 Q g (Max.) (nc) 29 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY V DS (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO-220 G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) () V GS = 10 V 0.55 Q g max. (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single D TO220 FULLPAK G S G D S NChannel MOSFET ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 0 V 0.85 Q g (Max.) (nc) 38 Q gs (nc) 9.0 Q gd (nc) 8 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 5 V 0.20 Q g (Max.) (nc) 8.4 Q gs (nc) 2.6 Q gd (nc) 6.4 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating For Automatic Insertion End Stackable
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY (V) 800 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 24 Q gd (nc) 110 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
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S Series Power MOSFET PRODUCT SUMMARY at T J max. (V) 65 R DS(on) max. at 25 C (Ω) = V.9 Q g max. (nc) 98 Q gs (nc) 7 Q gd (nc) 25 Configuration Single D D 2 PAK (TO263) FEATURES Generation one High E
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 0.55 Q g (Max.) (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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