MOSFET = 0V, I D. Volts R DS(on) (V GS = 10V, 17.5A) = 500V, V GS = 0V) = 0V, T C = 400V, V GS = 0V) = ±30V, V DS. = 1mA)
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1 APT14BLL(G) APT14SLL(G) V A.14 *G Denotes RoHS Compliant, Pb Free Terminal Finish. Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q g. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS Symbol Parameter S M M P D,T STG T L I AR E AR E AS POWER MOS 7 R Drain-Source Voltage Increased Power Dissipation Easier To Drive Continuous Drain T C = 2 C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power T C = 2 C Linear Derating Factor MOSFET TO-247 or Surface Mount D 3 PAK Package Operating and Storage Junction Temperature Range Lead Temperature:.63" from Case for 1 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 STATIC ELECTRICAL CHARACTERISTICS TO-247 D 3 PAK All Ratings: T C = 2 C unless otherwise specified. APT14BLL-SLL(G) 14 ±3 ± to G Watts W/ C C mj D S Symbol Characteristic / Test Conditions BS Drain-Source Breakdown Voltage ( = V, = 2µA) R DS(on) Drain-Source On-State Resistance 2 ( = 1V, 17.A).14 Ohms SS Zero Gate Voltage Drain Current ( = V, = V) Zero Gate Voltage Drain Current ( = 4V, = V, T C = 12 C) 1 µa I GSS Gate-Source Leakage Current ( = ±3V, = V) ±1 na (th) Gate Threshold Voltage ( =, = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
2 DYNAMIC CHARACTERISTICS Symbol Characteristic C iss C oss C rss Q g Q gs Q gd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions = V = 2V f= 1 MHz = 1V = 2V = 2 C RESISTIVE SWITCHING =1V =2V = 2 C R G =1.6 INDUCTIVE 2 C =333V, = 1V =A, R G = INDUCTIVE 12 C =333V, = 1V =A, R G = APT14 APT14 BLL BLL - SLL(G) pf 72 2 nc ns µj 288 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions I S I SM V SD r Q rr dv / dt Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 ( = V, I S = -A) Reverse Recovery Time (I S = -A, dl S /dt = 1A/µs) Reverse Recovery Charge (I S = -A, dl S /dt = 1A/µs) Peak Diode Recovery dv / dt THERMAL CHARACTERISTICS Symbol Characteristic R JC R JA Junction to Case Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 38 µs, Duty Cycle < 2% 3 See MIL-STD-7 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein ns µc V/ns 4 Starting T j = +2 C, L = 2.12mH, R G =2, Peak I L = A dv / dt numbers reflect the limitations of the test circuiather than the device itself. I S -A di / dt 7A/µs V R V 1 C 6 Eon includes diode reverse recovery. See figures 18, C/W Note:.1.3 t SINGLE PULSE t 2 Duty Factor D = t 1/t 2 Peak = P DM x Z JC + T C RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
3 1 1 &1V APT14 BLL BLL_SLL - SLL(G) 8V 8 RC MODEL Junction temp. ( C) 6 7V Power (watts).119.1f 2 6.V F Case temperature. ( C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL V.V V FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS NORMALIZED TO = 17.A =1V 1. 4 = +12 C 1. =2V 2 = +2 C.9 = - C , GATE-TO-SOURCE VOLTAGE (VOLTS), DRAIN CURRENT (AMPERES) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE, R DS (ON) vs DRAIN CURRENT T C, CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE I = 17.A D V = , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4 14 OPERATION HERE LIMITED BY R DS (ON) 1, APT14 BLL BLL_SLL - SLL(G) Ciss 1µS 1, Coss 1 1mS 1 Crss T C =+2 C =+1 C 1mS SINGLE PULSE FIGURE 1, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE = A =2V =1V =4V 1 =+1 C =+2 C Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE T = 12 C 3 J L = 1µH T = 12 C J L = 1µH (A) (A) FIGURE 14, DELAY TIMES vs CURRENT FIGURE 1, RISE AND FALL TIMES vs CURRENT T = 12 C J L = 1µH E ON includes diode reverse recovery I = A D E T = 12 C off J L = 1µH E ON includes diode reverse recovery (A) R G, GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
5 APT14 BLL_SLL(G) Gate Voltage 1 % = 12 C 9% Gate Voltage = 12 C 9% Drain Current 9% Drain Voltage % 1 % 1% Drain Current Drain Voltage Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT3DF6 G D.U.T. Figure 2, Inductive Switching Test Circuit TO-247 Package Outline e1 SAC: Tin, Silver, Copper D 3 PAK Package Outline e3 1% Sn Plated.31 (.29) 2.49 (.98) (.64) 6.1 (.242) BSC 6.2 (.244) (.84) 3.81 (.1) 4. (.177) Max (.123).79 (.31) 2.32 (.8) 1.4 (.) 2.13 (.84) Gate Drain Source 2.9 (.12).4 (.21) BSC 2-Plcs. Dimensions in Millimeters and (Inches)
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V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
More informationMDF13N65B N-Channel MOSFET 650V, 14A, 0.46Ω
MDF13N65B N-Channel MOSFET 65V, 14A,.46Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance
More informationMDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω
MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationT C =25 unless otherwise specified
800V N-Channel MOSFET BS = 800 V R DS(on) typ = 3.0 A Dec 2005 FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent
More informationMDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω
General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,
More informationUNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers
More informationN-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
More informationMDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ
MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationIRF130, IRF131, IRF132, IRF133
October 1997 SEMICONDUCTOR IRF13, IRF131, IRF132, IRF133 12A and 14A, 8V and 1V,.16 and.23 Ohm, N-Channel Power MOSFETs Features Description 12A and 14A, 8V and 1V r DS(ON) =.16Ω and.23ω Single Pulse Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationUNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220 The UTC 10N50 is an N-channel mode power MOSFET using UTC s advanced technology to provide
More informationMDP1930 Single N-channel Trench MOSFET 80V, 120A, 2.5mΩ
General Description The MDP193 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP193 is suitable
More informationMDU1511 Single N-channel Trench MOSFET 30V, 100.0A, 2.4mΩ
MDU1511 Single N-Channel Trench MOSFET 3V ㅊ MDU1511 Single N-channel Trench MOSFET 3V, 1.A, 2.mΩ General Description Features The MDU1511 uses advanced MagnaChip s MOSFET Technology, which provides high
More informationMDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω
MDP15N6G / MDF15N6G N-Channel MOSFET 6V MDP15N6G / MDF15N6G N-Channel MOSFET 6V, 15A,.4Ω General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides
More informationCharacteristics Symbol Rating Unit. T C=70 o C T A=25 o C 30.4 (3) T A=70 o C 24.2 (3) Pulsed Drain Current I DM 100 A 69.4.
General Description MDU1512 Single N-channel Trench MOSFET 3V, 1.A, 3.4mΩ The MDU1512 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationUNISONIC TECHNOLOGIES CO., LTD UTT52N15H
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
More informationIRF7700GPbF. HEXFET Power MOSFET V DSS R DS(on) max I D
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationMDF11N60 N-Channel MOSFET 600V, 11A, 0.55Ω
MDF11N6 N-channel MOSFET 6V MDF11N6 N-Channel MOSFET 6V, 11A,.55Ω General Description The MDF11N6 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GSS ±20 V T C=25 o C (Silicon Limited)
General Description The MDU4N uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU4N is suitable device
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
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