APT34N80B2C3G APT34N80LC3G

Transcription

1 APT3NB2C3G APT3NLC3G *G Denotes RoHS Compliant, Pb Free Terminal Finish. V 3A.15Ω Super Junction MOSFET T-MAX COOLMOS TO-26 Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Popular T-MAX or TO-26 Package D G S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS Symbol All Ratings: TC = C unless otherwise specified. Parameter APT3NB2C3G_LC3G -Source Voltage ID Continuous TC = C 3 IDM Pulsed Current VGS Gate-Source Voltage Continuous ±2 VGSM Gate-Source Voltage Transient ±3 Total Power TC = C 17 Watts Linear Derating Factor 3.33 W/ C VDSS PD TJ,TSTG TL dv/ to 15 Operating and Storage Junction Temperature Range C Lead Temperature:.63" from Case for 1 Sec. 3 -Source Voltage slope (VDS = 6V, ID = 3A, TJ = 1 C) 5 V/ns IAR Repetitive Avalanche Current 7 17 EAR Repetitive Avalanche Energy 7.5 EAS Single Pulse Avalanche Energy mj 67 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN BVDSS -Source Breakdown Voltage (VGS = V, ID = 5µA) RDS(on) -Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 1V, ID = 22A) Zero Gate Voltage Current (VDS = V, VGS = V) TYP Gate-Source Leakage Current (VGS = ±2V, VDS = V) 2.1 Zero Gate Voltage Current (VDS = V, VGS = V, TJ = 15 C) Gate Threshold Voltage (VDS = VGS, ID = 2mA) MAX 3 Ohms µa ±2 na 3.9 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - "COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" Rev G Symbol

2 DYNAMIC CHARACTERISTICS Symbol Characteristic C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Q g Total Gate Charge 3 Q gs Gate-Source Charge Q gd Gate- ("Miller") Charge t d(on) Turn-on Delay Time t r Rise Time t d(off) Turn-off Delay Time t f Fall Time E on Turn-on Switching Energy 6 E off Turn-off Switching Energy E on Turn-on Switching Energy 6 E off Turn-off Switching Energy Test Conditions = V = V f = 1 MHz = 1V = V = C RESISTIVE SWITCHING = 1V = V = 1 C = 2.5Ω INDUCTIVE C = 533V, = 15V = 3A, INDUCTIVE 1 C = 533V, = 15V = 3A, APT3NB2C3G _LC3G 51 pf nc ns µj 67 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions I S Continuous Source Current (Body Diode) I Pulsed Source Current 1 SM (Body Diode) V Diode Forward Voltage 2 SD ( = V, I S = -3A) t rr Reverse Recovery Time (I S = -3A, dl S / = 1A/µs, V R = V) Q rr Reverse Recovery Charge (I S = -3A, dl S / = 1A/µs, V R = V) dv / Peak Diode Recovery dv / 5 THERMAL CHARACTERISTICS Symbol Characteristic R θjc Junction to Case R θja Junction to Ambient ns µc V/ns C/W 1 Repetitive Rating: Pulse wih limited by maximum junction temperature 2 Pulse Test: Pulse wih < 3 µs, Duty Cycle < 2% 3 See MIL-STD- Method 371 Microsemi reserves the right to change, without notice, the specifications and information contained herein..35 Starting T j = + C, L = mH, = Ω, Peak I L = 3.A 5 I S = -3A di / = 1A/µs V R = V T J = 1 C 6 Eon includes diode reverse recovery. See figures 1, 2. 7 Repetitve avalanche causes additional power losses that can be calculated as P AV =E AR *f Rev G Z θjc, THERMAL IMPEDANCE ( C/W) t 1 t Duty Factor D = t 1/t 2.5 SINGLE PULSE Peak T J = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Note: P DM

3 Typical Performance Curves TC ( C).13 ZEXT.117 Dissipated Power (Watts).2.17 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. TJ ( C) VDS> ID (ON) x RDS (ON)MAX. µsec. PULSE <.5 % DUTY CYCLE TJ = -55 C TJ = + C 2 TJ = +1 C 5.5V 3 5V 2.5V 1 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1. NORMALIZED TO V = 17A GS VGS=1V VGS=2V.9. FIGURE, TRANSFER CHARACTERISTICS I V 2.5 D = 17A GS = 1V TJ, JUNCTION TEMPERATURE ( C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) TC, CASE TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 3. 6 FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) TJ, JUNCTION TEMPERATURE ( C) FIGURE, ON-RESISTANCE vs. TEMPERATURE TC, CASE TEMPERATURE ( C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE Rev G V 6V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 9 VGS =15 & 1V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 1 APT3NB2C3G _LC3G 5

4 5-717 Rev G Typical Performance Curves, GATE-TO-SOURCE VOLTAGE (VOLTS), DRAIN CURRENT (AMPERES) SWITCHING ENERGY (µj) t d(on) and t d(off) (ns), DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 1, MAXIMUM SAFE OPERATING AREA = 3A = V = 16V = 6V APT3NB2C3G _LC3G Ciss Coss Crss , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE t d(off) R, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pf) 2, 1, V = 533V DD R G T = 1 C J L = 1µH T J =+15 C T J =+ C 2 2 t d(on) 1 t r (A) (A) FIGURE 1, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT = 533V T J = 1 C L = 1µH = 533V T J = 1 C L = 1µH E ON includes diode reverse recovery. E on Graph removed E off (A), GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE SWITCHING ENERGY (µj) t r and t f (ns) V = 533V DD I = 3A D T = 1 C J L = 1µH E ON includes diode reverse recovery. t f E on E off

5 APT3NB2C3G _LC3G Gate Voltage 1 % 9% Gate Voltage t T = 1 C J d(off) td(on) T = 1 C J 9% Voltage Current 9% 5% t f tr 5% 1% Voltage 1 % Switching Energy Current Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 1, Turn-on Switching Waveforms and Definitions APT15DF1 V CE IC G D.U.T. Figure 2, Inductive Switching Test Circuit T-MAXTM (B2) Package Outline TO-26 (L) Package Outline e1 SAC: Tin, Silver, Copper.69 (.15) 5.31 (.29) 1.9 (.59) 2.9 (.9) e1 SAC: Tin, Silver, Copper.6 (.11) 5.21 (.) 1. (.71) 2.1 (.79) 15.9 (.61) (.6) (.76) 2.5 (.7) 3.1 (.122) 3. (.137) 5.3 (.212) 6.2 (.2) 5.79 (.22) 6.2 (.2).5 (.177) Max.. (.16).79 (.31) 2.21 (.7) 2.59 (.12) 19.1 (.7) 2.32 (.). (1.3) 26.9 (1.3) 2.7 (.113) 3.12 (.123) 2.29 (.9) 2.69 (.16) 1.65 (.65) 2.13 (.) 1.1 (.) 1. (.55) 5.5 (.215) BSC 2-Plcs. These dimensions are equal to the TO-27 without the mounting hole. Dimensions in Millimeters and (Inches) 19.1 (.7) (.2) Gate Source. (.19). (.33) 2.59 (.12) 3. (.11).76 (.3) 1.3 (.51) 2.79 (.11) 3.1 (.1) 5.5 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.9) 2.69 (.16) Gate Source Rev G (.19) 21.6 (.5)