CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

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1 MITSUBISHI HIGBT MODULES CM4HG-66H rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules CM4HG-66H IC...4 CES... High Insulated Type -element in a Pack ISiC Baseplate PPLICTION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRWING & CIRCUIT DIGRM Dimensions in mm ±. ±. -M8 NUTS C () C ±. G E 44 ±. 4 ±. 4 ±. E () >PET+PBT< CIRCUIT DIGRM EG C >PET+PBT< TB #. T =. ±. 4-φ MOUNTING HOLES.6 ±..9 ±. 4.4 ±. ±. LBEL 4 ±..4 ±..8 ±. depth min. 4.8 ±. 6. ±. 6. ±. ±. screwing depth min HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules May 9

2 MITSUBISHI HIGBT MODULES CM4HG-66H rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules MXIMUM RTINGS Symbol Item Conditions Ratings Unit CES GES IC ICM IE IEM Pc iso e Tj Top Tstg tpsc Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note ) Maximum power dissipation (Note ) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width GE =, Tj = C CE =, Tj = C DC, Tc = 9 C Pulse (Note ) DC Pulse (Note ) Tc = C, IGBT part RMS, sinusoidal, f = 6Hz, t = min. RMS, sinusoidal, f = 6Hz, QPD pc CC =, CE CES, GE =, Tj = C ± ~ + 4 ~ + 4 ~ + W C C C ELECTRICL Symbol Item Conditions Min Limits Typ Max Unit ICES GE(th) IGES Cies Coes Cres Qg CE(sat) td(on) tr Eon(%) td(off) tf Eoff(%) EC trr Qrr Erec(%) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note ) Turn-off delay time Turn-off fall time Turn-off switching energy (Note ) Emitter-collector voltage (Note ) Reverse recovery time (Note ) Reverse recovery charge (Note ) Reverse recovery energy (Note ), (Note ) CE = CES, GE = CE =, IC = 4 m, Tj = C GE = GES, CE =, Tj = C CE =, GE =, f = khz, Tj = C Tj = C Tj = C CC = 6, IC = 4, GE = ±, Tj = C IC = 4 (Note 4) Tj = C GE = Tj = C CC = 6, IC = 4, GE = ± RG = Ω, Tj = C, Ls = nh CC = 6, IC = 4, GE = ± RG = Ω, Tj = C, Ls = nh IE = 4 (Note 4) GE = CC = 6, IE = 4, GE = ± RG = Ω, Tj = C, Ls = nh Tj = C Tj = C m µ nf nf nf µc J/P J/P µc J/P HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules May 9

3 MITSUBISHI HIGBT MODULES CM4HG-66H rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules THERML Symbol Item Conditions Min Limits Typ Max Unit Rth(j-c)Q Rth(j-c)R Rth(c-f) Thermal resistance Thermal resistance Contact thermal resistance Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = W/m K, D(c-f) = µm 8... K/kW K/kW K/kW MECHNICL Symbol Item Conditions Min Limits Typ Max Unit Mt Ms Mt m CTI da ds LP CE RCC +EE Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance M8: Main terminals screw M6: Mounting screw M4: uxiliary terminals screw Tc = C N m N m N m kg mm mm nh mω Note. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating ( C).. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).. Junction temperature (Tj) should not exceed Tjmax rating ( C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.. Eon(%) / Eoff(%) / Erec(%) are the integral of.ce x.ic x dt. HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules May 9

4 MITSUBISHI HIGBT MODULES rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules CM4HG-66H PERFORMNCE CURES 8 Tj = C OUTPUT 8 TRNSFER CE = GE = 6 4 GE = GE = GE = GE = COLLECTOR-EMITTER OLTGE () Tj = C Tj = C GTE-EMITTER OLTGE () 8 COLLECTOR-EMITTER STURTION OLTGE GE = 8 FREE-WHEEL DIODE FORWRD 6 4 EMITTER CURRENT () 6 4 Tj = C Tj = C 4 6 Tj = C Tj = C 4 6 COLLECTOR-EMITTER STURTION OLTGE () EMITTER-COLLECTOR OLTGE () HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules May 9 4

5 MITSUBISHI HIGBT MODULES rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules CM4HG-66H CPCITNCE GTE CHRGE CE = 6, IC = 4 Tj = C CPCITNCE (nf) GE =, Tj = C f = khz Cies Coes Cres - - GTE-EMITTER OLTGE () COLLECTOR-EMITTER OLTGE () GTE CHRGE (µc). HLF-BRIDGE SWITCHING ENERGY CC = 6, GE = ± RG = Ω, Tj = C HLF-BRIDGE SWITCHING ENERGY CC = 6, IC = 4 GE = ±, Tj = C SWITCHING ENERGIES (J/P). Eon Eoff Erec SWITCHING ENERGIES (J/P) Eon Eoff Erec 4 6 GTE RESISTOR (Ω) HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules May 9

6 MITSUBISHI HIGBT MODULES rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules CM4HG-66H SWITCHING TIMES () HLF-BRIDGE SWITCHING TIME CC = 6, GE = ± RG = Ω, Tj = C td(off) tf td(on) - tr REERSE RECOERY TIME () FREE-WHEEL DIODE REERSE RECOERY CC = 6, GE = ± RG = Ω, Tj = C lrr trr REERSE RECOERY CURRENT () EMITTER CURRENT () NORMLIZED TRNSIENT THERML IMPEDNCE TRNSIENT THERML IMPEDNCE Rth(j c)q = K/kW Rth(j c)r =.K/kW Z th( j c ) ( t ) = Σ n Ri [K/kW] τi [sec] i= Ri exp ti t TIME (s) HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules May 9 6

7 MITSUBISHI HIGBT MODULES rd-ersion HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules CM4HG-66H REERSE BIS SFE OPERTING RE (RBSO) CC, GE = ± Tj = C, RG Ω 6 SHORT CIRCUIT SFE OPERTING RE (SCSO) CC, GE = ± Tj = C, RG Ω COLLECTOR-EMITTER OLTGE () 4 COLLECTOR-EMITTER OLTGE () FREE-WHEEL DIODE REERSE RECOERY SFE OPERTING RE (RRSO) CC, di/dt 8/ Tj = C REERSE RECOERY CURRENT () COLLECTOR-EMITTER OLTGE () HIGBT (High oltage Insulated Gate Bipolar Transistor) Modules May 9