Watts T J,T STG. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

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1 APT6GT6BR_SR APT6GT6SR 6V Thunderbolt IGBT (B) TO-47 D 3 PAK The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop Low Tail Current Avalanche Rated MAXIMUM RATINGS High Freq. Switching to 5KHz Ultra Low Leakage Current RBSOA and SCSOA Rated G C E All Ratings: T C = 5 C unless otherwise specified. G G C E (S) C E Parameter APT6GT6BR_SR ES -Emitter Voltage 6 GR -Gate Voltage (R GE = KΩ) 6 Volts V GE Gate Emitter Voltage ± Continuous T C = 5 C 4 M Continuous T C = 5 C Pulsed T C = 5 C 6 36 Amps I LM RBSOA Clamped Inductive Load Current R G = Ω T C = 5 C 36 E AS Single Pule Avalanche Energy 65 P D Total Power Dissipation 5 Watts T J,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.63" from Case for Sec. -55 to 5 3 C STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditio BES -Emitter Breakdown Voltage (V GE = V, =.5mA) V GE (TH) Gate Threshold Voltage (E = V GE, = 5µA, T j = 5 C) E (ON) -Emitter On Voltage (V GE = 5V,, T j = 5 C) -Emitter On Voltage (V GE = 5V,, T j = 5 C) ES Cut-off Current (E = ES, V GE = V, T j = 5 C) Cut-off Current (E = ES, V GE = V, T j = 5 C) I GES Gate-Emitter Leakage Current (V GE = ±V, E = V) ± Volts µa na CAUTION: These Devices are Seitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website Rev C -5

2 DYNAMIC CHARACTERISTICS APT6GT6BR_SR Characteristic Test Conditio C ies C oes C res Q g Q ge Q gc Input Capacitance Output Capacitance Reverse Trafer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate- ("Miller") Charge Capacitance V GE = V E = 5V f = MHz Gate Charge V GE = 5V C =.5ES pf nc Resistive Switching (5 C) V GE = 5V C =.5ES R G = Ω Turn-on Switching Energy Turn-off Switching Energy Inductive Switching (5 C) LAMP (Peak) =.66ES V GE = 5V R G = Ω T J = +5 C E ts Total Switching Losses E ts Total Switching Losses Inductive Switching (5 C) LAMP (Peak) =.66ES V GE = 5V R G = Ω gfe Forward Traconductance E = V, 4 S THERMAL AND MECHANICAL CHARACTERISTICS Characteristic R ΘJC R ΘJA Junction to Case Junction to Ambient.5 4 C/W W T Package Weight. 6. oz gm Torque Mounting Torque (using a 6-3 or 3mm Binding Head Machine Screw). lb in N m 5-63 Rev C -5 Repetitive Rating: Pulse width limited by maximum junction temperature. IC =, R GE = 5Ω, L = 36µH, T j = 5 C 3 See MIL-STD-75 Method The maximum current is limited by lead temperature. APT Reserves the right to change, without notice, the specificatio and information contained herein.

3 C, CAPACITANCE (pf), COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES) APT6GT6BR_SR 6V 6V 5V Figure, Typical Output Characteristics (T J = 5 C) Figure, Typical Output Characteristics (T J = 5 C) Figure 3, Typical Output V GE = 5V Figure 4, Maximum Forward Safe Operating Area,, T C =+5 C T C =-55 C f = MHz 9V 8V 7V C ies C oes C res Q g, TOTAL GATE CHARGE (nc) Figure 5, Typical Capacitance vs -To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage.5 5 µsec. Pulse Test V GE = 5V V GE =7, 5, 3, & V T C =+5 C V GE, GATE-TO-EMITTER VOLTAGE (VOLTS), COLLECTOR CURRENT (AMPERES), COLLECTOR CURRENT (AMPERES) OPERATION LIMITED BY E (SAT) T C =+5 C T J =+5 C SINGLE PULSE E =3V V GE =7, 5, 3, & V E =V 9V 8V 7V E =48V µs ms ms Z θjc, THERMAL IMPEDANCE ( C/W)..5 D=.5.. Note:.5. t.5. t. Duty Factor D = t /t SINGLE PULSE Peak T J = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Traient Thermal Impedance, Junction-To-Case vs Pulse Duration P DM 5-63 Rev C -5

4 5-63 Rev C -5, COLLECTOR CURRENT (AMPERES) TOTAL SWITCHING ENERGY LOSSES () BES, COLLECTOR-TO-EMITTER BREAKDOWN E (SAT), COLLECTOR-TO-EMITTER VOLTAGE (NORMALIZED) SATURATION VOLTAGE (VOLTS) C =.66 ES V GE = +5V R G = Ω.5.5 SWITCHING ENERGY LOSSES () SWITCHING ENERGY LOSSES (), COLLECTOR CURRENT (AMPERES) C =.66 ES V GE = +5V C =.66 ES V GE = +5V R G = Ω APT6GT6BR_SR T C, CASE TEMPERATURE ( C) Figure 8, Typical E (SAT) Voltage vs Junction Temperature Figure 9, Maximum Current vs Case Temperature R G, GATE RESISTANCE (OHMS) Figure, Breakdown Voltage vs Junction Temperature Figure, Typical Switching Energy Losses vs Gate Resistance , COLLECTOR CURRENT (AMPERES) Figure, Typical Switching Energy Losses vs. Junction Temperature Figure 3, Typical Switching Energy Losses vs Current.. F, FREQUENCY (KHz) Figure 4,Typical Load Current vs Frequency For Both: Duty Cycle = 5% T sink = +9 C Gate drive as specified Power dissapation = 4W I LOAD = I RMS of fundamental

5 A HARGE APT6GT6BR_SR *DRIVER SAME TYPE AS C =.66 ES E ts = + B 9% % 9% 9% uh A LAMP B R G % E (SAT) % A DRIVER* t=us Figure 5, Switching Loss Test Circuit and Waveforms E (off) 9% V GE (on) C R L =.5 ES % V GE (off) E (on) From Gate Drive Circuitry R G Figure 6, Resistive Switching Time Test Circuit and Waveforms TO-47 Package Outline D 3 PAK Package Outline 4.69 (.85) 5.3 (.9).49 (.59).49 (.98).4 (.6).79 (.3).8 (.89).46 (.845) 6.5 (.4) BSC 4.5 (.77) Max. 9.8 (.78).3 (.8). (.4).4 (.55). (.87).59 (.) 5.45 (.5) BSC -Plcs. Dimeio in Millimeters and (Inches) 5.49 (.6) 6.6 (.64) 5.38 (.) 6. (.44) 3.5 (.38) 3.8 (.5).87 (.3) 3. (.3).65 (.65).3 (.84) Gate Emitter (Heat Sink) 4.98 (.96) 5.8 (.).47 (.58).57 (.6).46 (.8) {3 Plcs}.56 (.). (.).78 (.7).67 (.5).84 (.). (.48).3 (.5) 5.95 (.68) 6.5(.63).7 (.5).4 (.55).98 (.78).8 (.8) 5.45 (.5) BSC { Plcs.}.4 (.4).5(.45) 3.79 (.543) 3.99(.55) Emitter Gate Dimeio in Millimeters (Inches) APT s products are covered by one or more of U.S.patents 4,895,8 5,45,93 5,89,434 5,8,34 5,9,5 5,6,336 6,53,786 5,56,583 4,748,3 5,83, 5,3,474 5,434,95 5,58,58 and foreign patents. US and Foreign patents pending. All Rights Reserved. Revised 4/8/ (.58) 3.5(.53) Revised 8/9/ (.5) 4.6 (.6) (Base of Lead).5 (.453).6 (.457) Heat Sink () and Leads are Plated 5-63 Rev C -5