Low Losses. Soft Recovery Characteristics. = 126 C, Duty Cycle = 0.5) Amps I FSM. = 45 C, 8.3ms) I F = 60A = 120A = 60A, T J = 125 C V R = V R
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1 V 6A APT6DB APT6DS APT6DBG* APT6DSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode -Motor Controllers -Converters -Inverters Snubber Diode PFC PRODUCT FEATURES Ultrafast Recovery Times Soft Recovery Characteristics Popular TO-47 Package or Surface Mount D 3 PAK Package Low Forward Voltage Low Leakage Current PRODUCT BENEFITS Low Losses Low Noise Switching Cooler Operation Higher Reliability Systems Increased System Power Deity T O-47 D 3 PAK - - Anode Back of Case - MAXIMUM RATINGS All Ratings: T C = 5 C unless otherwise specified. Characteristic / Test Conditio APT6DB(G)_S(G) Maximum D.C. Reverse Voltage RM Maximum Peak Repetitive Reverse Voltage Volts WM Maximum Working Peak Reverse Voltage (AV) Maximum Average Forward Current (T C = 6 C, Duty Cycle =.5) 6 (RMS) RMS Forward Current (Square wave, 5% duty) 5 SM Non-Repetitive Forward Surge Current ( = 45 C, 8.3ms) 54,T STG T L Operating and StorageTemperature Range Lead Temperature for Sec. -55 to 75 3 C STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditio = 6A..5 V F Forward Voltage = A.3 Volts = 6A,.8 I RM C T = Rated Maximum Reverse Leakage Current = Rated, Junction Capacitance, = V Microsemi Website µa pf 53- Rev F 5-5
2 DYNAMIC CHARACTERISTICS APT6DB(G)_S(G) Characteristic Test Conditio = A, di F /dt = -A/µs, = 3V, = 5 C = 6A, di F /dt = -A/µs = 8V, T C = 5 C = 6A, di F /dt = -A/µs = 8V, T C = 6A, di F /dt = -A/µs = 8V, T C THERMAL AND MECHANICAL CHARACTERISTICS Characteristic / Test Conditio R θjc R θja Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance.3 4 C/W W T Package Weight. 5.9 oz g Torque Maximum Mounting Torque. lb in N m Microsemi reserves the right to change, without notice, the specificatio and information contained herein..35 Z θjc, THERMAL IMPEDANCE ( C/W) SINGLE PULSE Duty Factor D = t /t Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (seconds) FIGURE a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Note: P DM t t Junction temp ( C) RC MODEL.5 C/W.436 J/ C 53- Rev F 5-5 Power (watts) Case temperature ( C).3 C/W.65 C/W.5 J/ C.7 J/ C FIGURE b, TRANSIENT THERMAL IMPEDANCE MODEL
3 TYPICAL PERFORMANCE CURVES, REVERSE RECOVERY CHARGE, FORWARD CURRENT () (A) = 5 C = 5 C = -55 C APT6DB(G)_S(G) = 8V V F, ANODE-TO-CATHODE VOLTAGE (V) /dt, CURRENT RATE OF CHANGE(A/µs) Figure. Forward Current vs. Forward Voltage Figure 3. vs. Current Rate of Change = 8V A 3A 6A, REVERSE RECOVERY CURRENT, REVERSE RECOVERY TIME (A) () = 8V A A 3A 6A 6A 3A /dt, CURRENT RATE OF CHANGE (A/µs) /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change C J, JUNCTION CAPACITANCE K f, DYNAMIC PARAMETERS (pf) (Normalized to A/µs) Duty cycle =.5 = 75 C , JUNCTION TEMPERATURE ( C) Case Temperature ( C) Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature , REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage (AV) (A) 53- Rev F 5-5
4 APT6DB(G)_S(G) V r +8V di F /dt Adjus t V D.U.T. 3µH / Waveform PEARSON 878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit Forward Conduction Current di F /dt - Rate of Diode Current Change Through Zero Crossing. Zer o - - measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through and.5, passes through zero. 5 - Area Under the Curve Defined by and t RR. Figure. Diode Reverse Recovery Waveform Definition TO-47 Package Outline e SAC: Tin, Silver, Copper D 3 PAK Outline e3 % Sn 4.69 (.85) 5.3 (.9).49 (.59).49 (.98) 6.5 (.4) BSC 5.49 (.6) 6.6 (.64) 5.38 (.) 6. (.44) (Heat Sink) 4.9 (.93) 5. (.).45 (.57).6 (.63) 5.85 (.64) 6.5(.63). (.39).5(.45) 3.3 (.54) 3.6(.535).8 (.89).46 (.845) 3.5 (.38) 3.8 (.5) 8.7 (.736) 9. (.75).4 (.488).7 (.5) 53- Rev F (.6).79 (.3). (.87).59 (.) 4.5 (.77) Max. 9.8 (.78).3 (.8). (.4).4 (.55).9 (.43) BSC Dimeio in Millimeters and (Inches).65 (.65).3 (.84) Anode.4 (.6).65 (.6). (.).5 (.).7 (.6).9 (.4).5 (.45).45 (.57).9 (.75). (.83) 5.45 (.5) BSC ( Plcs. ). (.47).4 (.55) Anode Dimeio in Millimeters (Inches).4 (.94).7 (.6) (Base of Lead) Heat Sink () and Leads are Plated
5 APT6DB(G)_S(G) Disclaimer: The information contained in the document (unless it is publicly available on the Web without access restrictio) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, tramitted, distributed or disclosed or used without the express duly signed written coent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No licee under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any licee under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applicatio. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specificatio believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specificatio or parameters provided by Microsemi. It is the customer s and user s respoibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided AS IS, WHERE IS and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for coequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditio which can be located on the web at Rev F 5-5
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