MMIX1T132N50P3 V DSS

Transcription

1 Polar3 TM Power MOSFET Current & Temperature Sensing Advance Technical Information V DSS = 5V I D25 = 63A R DS(on) 43m (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated CC CS A A2 S GR G Symbol Test Conditions Maximum Ratings V DSS T J = 25 C to 5 C 5 V V DGR T J = 25 C to 5 C, R GS = M 5 V S Continuous 3 V M Transient V I D25 = 25 C 63 A I DM = 25 C, Pulse Width Limited by T JM 33 A I A = 25 C 66 A E AS = 25 C 2 J dv/dt I S I DM, V DD V DSS, T J 5 C 35 V/ns P D = 25 C 5 W T J C T JM 5 C T stg C T L Maximum Lead Temperature for Soldering 3 C T SOLD Plastic Body for s 2 C V ISOL 5/ Hz, Minute 25 V~ F C Mounting Force 5.. /..45 N/lb. Weight 8 g Symbol Test Conditions Characteristic Values (T J = 25 C Unless Otherwise Specified) Min. Typ. Max. BV DSS = V, I D = 3mA 5 V (th) V DS =, I D = 8mA V I GSS = 3V, V DS = V na I DSS V DS = V DSS, = V 5 A Note 2, T J = 25 C 3 ma R DS(on) = V, I D = 66A, Note 43 m G CS GR S A A2 CC D Features Silicon Chip on Direct-Copper-Bond Substrate - High Power Dissipation - Isolated Mounting Surface - 25V~ Electrical Isolation Avalanche Rated Low Package Inductance Current Mirror for MOSFET Source & Sensing Integrated Diodes for Sensing MOSFET Temperature Low R DS(on) Advantages Easy to Mount Space Savings Applications Isolated Tab D D CSCC G GR - Gate - Current Sense - Gate Return - Source - Sense Current Return - Anode - Anode 2 - Common Cathode - Drain DC-DC Converters AC-DC Converters PFC Connect / Disconnect Load Inrush Current Control S A2A 6 IXYS CORPORATION, All Rights Reserved DS695(/6)

2 Symbol Test Conditions Characteristic Values (T J = 25 C Unless Otherwise Specified) Min. Typ. Max. g fs V DS = V, I D = 66A, Note 68 S C iss 8.6 nf C oss = V, V DS = 25V, f = MHz 7 pf C rss 2 pf R Gi Gate Input Resistance.6 t d(on) 42 ns Resistive Switching Times t r 9 ns = V, V DS =.5 V DSS, I D = 66A t d(off) 9 ns R t G = (External) f 5 ns Q g(on) 267 nc Q gs = V, V DS =.5 V DSS, I D = 66A 95 nc Q gd 63 nc R thjc.24 C/W R thcs.5 C/W R thja 3 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25 C Unless Otherwise Specified) Min. Typ. Max. I S = V 32 A I SM Repetitive, Pulse Width Limited by T JM 53 A V SD I F = A, = V, Note.5 V t rr I ns F = 66A, -di/dt = A/ s Q RM 2 C V I R = V, = V RM A Notes:. Pulse test, t 3μs, duty cycle, d 2%. 2. Part must be heatsunk for high-temp I DSS measurement. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,4,65 B 6,683,344 6,727,585 7,5,734 B2 7,57,338B2 by one or more of the following U.S. patents: 4,8,72 5,7,58 5,63,37 5,38,25 6,259,23 B 6,534,343 6,7,5 B2 6,759,692 7,63,975 B2 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728 B 6,583,55 6,7,463 6,77,478 B2 7,7,537

3 Fig.. Output T J = 25ºC = V 8V 7V 25 Fig. 2. Extended Output T J = 25ºC = V 8V 5 7V V 5V 5 6V 5V Fig. 3. Output 3.2 Fig. 4. R DS(on) Normalized to Value vs. Junction Temperature = V 2.8 = V 7V 6V RDS(on) - Normalized I D = 32A 5V Fig. 5. R DS(on) Normalized to Value vs. Drain Current 7 Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 = V RDS(on) - Normalized T J = 25ºC I D - Amperes Degrees Centigrade 6 IXYS CORPORATION, All Rights Reserved

4 Fig. 7. Input Admittance Fig. 8. Transconductance T J = - ºC 25ºC - ºC g f s - Siemens 25ºC 25ºC Volts I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig.. Gate Charge 3 9 V DS = 25V 25 8 I G = ma 7 IS - Amperes 5 T J = 25ºC VGS - Volts V SD - Volts 2 2 Q G - NanoCoulombs, Fig.. Capacitance Fig. 2. Forward-Bias Safe Operating Area C iss R DS(on) Limit Capacitance - PicoFarads,, Coss f = MHz C rss T J = 5ºC = 25ºC Single Pulse µs, ms IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

5 Fig. 3. Maximum Transient Thermal Impedance. Z(th)JC - K / W Pulse Width - Seconds 28 Fig. 4. Resistive Turn-on Rise Time vs. Junction Temperature 3 Fig. 5. Resistive Turn-on Rise Time vs. Drain Current t r - Nanoseconds R G = Ω, = V V DS = 25V I D = A t r - Nanoseconds R G = Ω, = V V DS = 25V T J = 25ºC I D - Amperes 3 Fig. 6. Resistive Turn-on Switching Times vs. Gate Resistance 24 Fig. 7. Resistive Turn-off Switching Times vs. Junction Temperature 5 25 t r t d(on) , = V 22 t f t d(off) R G = Ω, = V t r - Nanoseconds 5 V DS = 25V I D = A t d ( o n ) - Nanoseconds t f - Nanoseconds V DS = 25V I D = A t d ( o f f ) - Nanoseconds R G - Ohms IXYS CORPORATION, All Rights Reserved

6 35 Fig. 8. Resistive Turn-off Switching Times vs. Drain Current 3 3 Fig. 9. Resistive Turn-off Switching Times vs. Gate Resistance 4 t f t d(off) t f t d(off) t f - Nanoseconds R G = Ω, = V V DS = 25V T J = 25ºC 9 t d ( o f f ) - Nanoseconds t f - Nanoseconds 25 5, = V V DS = 25V I D = A 3 2 t d ( o f f ) - Nanoseconds I D - Amperes R G - Ohms Fig.. Forward Current vs. Forward Voltage of Temp. Sensing Diode. Fig. 2. Forward Voltage of Temp. Sensing Diode vs. Junction Temperature 9 IF - MilliAmperes T J = 75ºC 5ºC 25ºC ºC 75ºC 5ºC 25ºC ºC - 25ºC - 5ºC VF - Volts I F = ma I F = ma V F - Volts Fig. 22. Delta Forward Voltage of Temp. Sensing Diode vs. Junction Temperature Fig. 23. Current Mirror vs. Source Current dvf - MilliVolts di F = ma - ma Current Mirror - MilliAmperes T J = - 5ºC ºC 5ºC R CS = Ω I S - Amperes IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: MMIX_32N5P3(K9) -8-6-A

7 G CS GR S A A2 CC D - Gate - Current Sense - Gate Return - Source - Sense Current Return - Anode - Anode 2 - Common Cathode - Drain 6 IXYS CORPORATION, All Rights Reserved

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