DE N09A RF Power MOSFET
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- Job Stafford
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1 N-Channel Enhancement Mode Low Q g and R g High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings V DSS T J = C to 15 C 2 V V DGR T J = C to 15 C; R GS = 1 MΩ 2 V V GS Continuous ±2 V V GSM Transient ±3 V I D T c = C 9 A I DM T c = C, pulse width limited by T JM 54 A I AR T c = C 9. A E AR T c = C 7.5 mj V DSS = 2 V I D = 9 A R DS(on).3 Ω P DC = 75 W dv/dt I S I DM, di/dt A/µs, V DD V DSS, T j 15 C, R G =.2Ω 5 V/ns I S = >2 V/ns P DC 75 W P DHS T c = C Derate 4.4W/ C above C 5 W P DAMB T c = C 3.5 W R thjc 2 C/W R thjhs 3 C/W Symbol Test Conditions Characteristic Values T J = C unless otherwise specified min. typ. max. V DSS V GS = V, I D = 3 ma 2 V V GS(th) V DS = V GS, I D = µa V I GSS V GS = ±2 V DC, V DS = ± na I DSS V DS =.8 V DSS T J = C V GS = T J = 1 C R DS(on) V GS = 15 V, I D =.5I D Pulse test, t 3µS, duty cycle d 2% µa µa.3 Ω g fs V DS = 4 V, I D =.5I D, pulse test S T J C T JM 175 C T stg C T L 1.6mm (.63 in) from case for s 3 C Weight 2 g GATE SG1 Features SG2 Isolated Substrate high isolation voltage (>V) excellent thermal transfer Increased temperature and power cycling capability IXYS advanced low Q g process Low gate charge and capacitances easier to drive faster switching Low R DS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages SD1 SD2 DRAIN Optimized for RF and high speed switching at frequencies to >MHz Easy to mount no insulators needed High power density
2 Symbol Test Conditions Characteristic Values (T J = C unless otherwise specified) min. typ. max. R G 5 Ω C iss 5 pf C oss V GS = V, V DS =.8 V DSS(max), f = 1 MHz 6 pf C rss 11 pf C stray Back Metal to any Pin 16 pf T d(on) 4 ns T on V GS = 15 V, V DS =.8 V DSS 4 ns I D =.5 I DM T d(off) R G =.2 Ω (External) 4 ns T off 4 ns Q g(on) 16 nc Q gs V GS = V, V DS =.5 V DSS I D =.5 I D, Ig = 3 ma 2.7 nc Q gd 7.5 nc -Drain Diode Characteristic Values (T J = C unless otherwise specified) Symbol Test Conditions min. typ. max. I S V GS = V 9. A I SM Repetitive; pulse width limited by T JM 9 A V SD I F = I S, V GS = V, Pulse test, t 3 µs, duty cycle 2% 1.4 V T rr 45 ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the Device Installation & Mounting Instructions technical note on the IXYSRF web site at; IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,86,72 4,881,6 4,891,686 4,931,844 5,17,58 5,34,796 5,49,961 5,63,37 5,187,117 5,237,481 5,486,715 5,381, 5,64,45
3 Fig. 1 Typical Transfer Characteristics Fig. 2 V DS = 4V, PW = 2µS 4 3 Typical Output Characteristics ID, Drain Current (A) ID, Drain Currnet (A) V 7V 6.5V 6V 5.5V 5V 4.5V V GS, Gate-to- Voltage (V) V DS, Drain-to- Voltage (V) Fig. 3 Fig. 4 Gate-to- Voltage (V) Gate Charge vs. Gate-to- Voltage Gate Charge (nc) Capacitance (pf) 1 V DS vs. Capacitance Ciss Coss Crss V DS Voltage (V) Fig. 5 Maximum Transient Thermal Impedance ZTH(JC) C/W Pulse Time - Seconds
4 Fig. 6 Package drawing Gate Drain
5 21N9A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms L G, L S and L D. Rd is the R DS(ON) of the device, Rds is the resistive leakage term. The output capacitance, C OSS, and reverse transfer capacitance, C RSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 7 DE-SERIES SPICE Model Net List: *SYM=POWMOSN.SUBCKT 21N9 2 3 * TERMINALS: D G S * 2 Volt 9 Amp.3 ohm N-Channel Power MOSFET M DMOS L=1U W=1U RON DON 6 2 D1 ROF DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3.5N RD DCOS 3 1 D3 RDS MEG LS 3 3.1N LD 4 1N LG 2 5 1N.MODEL DMOS NMOS (LEVEL=3 VTO=3. KP=2.7).MODEL D1 D (IS=.5F CJO=1P BV= M=.5 VJ=.6 TT=1N).MODEL D2 D (IS=.5F CJO=1P BV=2 M=.5 VJ=.6 TT=1N RS=M).MODEL D3 D (IS=.5F CJO=3P BV=2 M=.3 VJ=.4 TT=4N RS=M).ENDS Doc # Rev IXYS RF An IXYS Company 169 Oakridge Dr., Suite Fort Collins, CO USA Fax: sales@ixyscolorado.com Web:
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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