A 64-QAM 60GHz CMOS Transceiver with 4-Channel Bonding

Transcription

1 A 64-QAM 6GHz CMOS Transceiver with 4-Channel Bonding Kenichi Okada, Ryo Minami, Yuuki Tsukui, Seitaro Kawai, Yuuki Seo, Shinji Sato, Satoshi Kondo, Tomohiro Ueno, Yasuaki Takeuchi, Tatsuya Yamaguchi, Ahmed Musa, Rui Wu, Masaya Miyahara, and Akira Matsuzawa Tokyo Institute of Technology, Japan of 28

2 Outline Motivation Transmitter Mixer-first transmitter Receiver Open-loop FVF-based amp. Measurement and Comparison Conclusion 1 of 28

3 6GHz-Band Capability QPSK 3.52Gbps/ch 16QAM 7.4Gbps/ch Channel Low Freq. Center Freq. High Freq. Nyquist BW 64QAM Number (GHz) 1.56Gbps/ch (GHz) (not (GHz) reported (GHz) yet) Roll-Off Factor A QAM 2-ch A2 bonding Gbps ch A3 bonding Gbps 63.72(not reported yet) 4-ch A4 bonding Gbps 65.88(not reported yet) 24 MHz 2.16 GHz 1.76 GHz MHz from IEEE82.11ad/WiGig 2 of 28 f GHz

4 Design Considerations Wideband gain characteristics RF: 57-66GHz BB: 1.2GHz(1ch), 5GHz(4-ch bonding) Wide dynamic range Linearity & Sensitivity RX SNDR >4dB Low phase noise (performance limiter)* (64QAM) I/Q mismatch & LO leakage** Image rejection ratio <-4dBc *K. Okada, et al., JSSC 213 **S. Kawai, et al., RFIC of 28

5 Block Diagram TX RX 6GHz 2GHz PLL 6GHz *K. Okada, et al., ISSCC 211 6GHz QILO* Control Logic BB BB Direct-conversion TX Mixer-first topology RX FVF BB amp. Current-bleeding mixer LO Injection-lock 6GHz QILO* +2GHz PLL 4 of 28

6 TX Design Considerations Previous work* <3GHz This work 5W input -29mW 4x 6x +15dB +13mW -29mW *K. Okada, et al., ISSCC 212 <3GHz OIP3-15dB 5 of 28

7 Mixer-First Transmitter Mixer-first receiver*, ** BBout RFin Mixer-first transmitter This work RFout BBin LO PA LO 1MHz up-converted** 2GHz (2MHz-BW) *M. Soer, et al., ISSCC 29 **C. Andrews, et al., ISSCC GHz (9GHz-BW) 4.5GHz down-converted even for Z in 6 of 28

8 Matching network Input Impedance and Leakage Cancel Rf LO+ RSW 5W To PA ZRF LO- RSW RSW 2W Zin BB input Rf ZRF LO+ RSW 2W Zin Z in ω BB = 2Ω / R sw + 4 π 2 Z RF ω BB + ω LO + Z RF ω BB ω LO Wideband Z RF is realized by R f -feedback. *C. Andrews, et al., ISSCC 21 7 of 28

9 Gain [db] TX Measurement Result Lower-side-band gain including RF path LO=61.56GHz Frequency [GHz] 8 of 28

10 Normalized Power [dbc] Image Rejection & LO Leakage I/Q mismatch calibration* is applied. RF VGA & QILO phase adjustment dBc <-47dBc *S. Kawai, et al., RFIC Frequency [GHz] 9 of 28

11 EVM [db] TX EVM Measurement ch.3 with 7.4Gb/s 16QAM Average output power [dbm] 1 of 28

12 RX Mixer BBout+ Ibleed BBout- Current-bleeding to reduce LO power CCC at RF input Iswitch LO+ Itail M4 LO- M5 LO+ Pdc: 11mW CG: -7dB f low :.27MHz f high : >4GHz RF+ RF- 11 of 28

13 RX Baseband Amplifier Wide bandwidth (>5GHz) High gain and high linearity Low power consumption Open-loop FVF-based amplifier vout vin M1 M3 A V g ds3 g m3 Flipped Voltage Follower* (FVF) *R. Carvajal, et al., TCAS-I of 28

14 RX Baseband Amplifier (Cont.) vin M1 M9 RL + - Vref RL M1 vout M3 Rs Vload Sleep A V 1 g m3 R S modified FVF OUT+ IN+ M5 M1 Rs Rs M2 M6 OUT- IN- A V g m7 g m3 R L R S by 6mW g m7 R L M3 Cs Cs M4 1 g m3 R S //(1/jωC S ) 13 of 28 M7 M8

15 Gain [db] RX Measurement Result Lower-side-band gain including RF path LO=61.56GHz Frequency [GHz] 14 of 28

16 6GHz LO Considerations for 64QAM 6GHz Quadrature Injection Locked Oscillator* Channel bonding 7 carrier frequencies 4ch-bond 2ch-bond Ch.1 Ch.2 Ch.3 Ch f [GHz] *K. Okada, et al., JSSC of 28

17 6GHz Quadrature LO Design 36/4MHz ref. 2GHz PLL 2 PFD CP LPF *K. Okada, et al., ISSCC 211 6GHz QILO* (54,55,56,57 58,59,6) 16 of GHz PLL: 64mW 6GHz QILO: 18mW(TX)&15mW(RX) QILO frequency range: 58-66GHz GHz 59.4GHz 6.48GHz 61.56GHz 62.64GHz 63.72GHz 64.8GHz Phase noise improvement by injection locking* 1MHz at 61.56GHz

18 Detailed Block Diagram I Q RF amp. Control Logic TX Output PA Psat=1.3dBm RX Input LNA NF=4.2dB RF amp. I Mixer I Mixer I Q Mixer Q Mixer LO buf. 6GHz QILO LO buf. 2GHz PLL 6GHz QILO 17 of 28 Q BB amp. (FVF-FVF-SF)

19 RX in TX out 65nm CMOS I MIXER Die Photo LO BUF. 4.2mm TX BB in Q.OSC. PA LNA Q MIXER I MIXER & RF amp LO BUF. LO BUF. PLL RX BB out Q.OSC. Logic Q MIXER & RF amp TX: 186mW CMOS 65nm, 1Al+11Cu TX: 186mW RX: 155mW 155mW PLL: 64mW PLL: 64mW LO BUF. 18 of 28 Area TX 1.3mm 2 RX 1.25mm 2 PLL.9mm 2 Logic.67mm 2

20 Measurement Setup Power supply Power supply Arbitrary Waveform Generator Oscilloscope RF board (TX mode) RF board (RX mode) 25-GS/s AWG 1-GS/s oscilloscope (33GHz BW) 14-dBi horn antennas 19 of 28

21 Setup for TX-to-RX Measurement Arbitrary Waveform Generator Tektronix AWG72A (25GS/s) Power supply Control signals 36MHz ref. Oscilloscope Tektronix DSA7334D (33-GHz BW, 1GS/s) 36MHz ref. RF board (TX mode) 14 dbi Control signals RF board (RX mode) Power supply Symbol rate: 1.76GS/s (1ch), 7.4GS/s (4ch bonding) Roll-off factor: 25% for WiGig spectrum mask A maximum distance is defined within a SNR of 9.8dB(QPSK), 16.5dB(16QAM), and 22.5dB(64QAM) for a theoretical BER of of 28

22 Channel/ Carrier freq. 1.56Gb/s 64QAM 64QAM with 1.56Gb/s is achieved for the full 4 channels. ch GHz ch GHz ch GHz ch GHz Modulation 64QAM Data rate 1.56Gb/s 1.56Gb/s 1.56Gb/s 1.56Gb/s Constellation Spectrum TX EVM -27.1dB -27.5dB -28.dB -28.8dB TX-to-RX EVM -24.6dB -23.9dB -24.4dB -26.3dB Distance.8m.8m.13m.6m 21 of 28

23 7.4Gb/s 16QAM (max 28.16Gb/s) 28.16Gb/s is achieved by using 4-bonded channel. Channel/ Carrier freq. ch GHz ch GHz ch GHz ch GHz ch.1-ch.4 Channel bond Modulation 16QAM Data rate 7.4Gb/s 7.4Gb/s 7.4Gb/s 7.4Gb/s 28.16Gb/s Constellation Spectrum TX EVM -27.8dB -27.6dB -28.4dB -28.8dB -2.dB TX-to-RX EVM -24.6dB -24.1dB -24.6dB -27.dB -17.2dB Distance.7m.6m.8m.4m.7m 22 of 28

24 3.52Gb/s QPSK (max 14.8Gb/s) 14.8Gb/s is achieved by using 4-bonded channel. Channel/ Carrier freq. ch GHz ch GHz ch GHz ch GHz ch.1-ch.4 Channel bond Modulation QPSK Data rate 3.52Gb/s 3.52Gb/s 3.52Gb/s 3.52Gb/s 14.8Gb/s Constellation Spectrum TX EVM -28.1dB -27.7dB -29.dB -29.7dB -2.1dB TX-to-RX EVM -25.3dB db -24.5dB -26.6dB -17.9dB Distance 2.4m 2.m 2.6m.9m.3m 23 of 28

25 Performance Comparison of 6GHz TRX Data rate / Modulation TX-to- RX EVM SiBeam [3] 7.14Gb/s(16QAM) -19dB Tokyo Tech [4, 5] 16Gb/s(16QAM) 2Gb/s(16QAM)[5] -21dB IMEC [6] 7Gb/s(16QAM) -18dB Panasonic [9] This work 2.5Gb/s(QPSK) -22dB 1.56Gb/s(64QAM) 28.16Gb/s(16QAM) -26dB Power consumption TX: 1,82mW RX: 1,25mW TX: 319mW RX: 223mW TX: 167mW RX: 112mW TX: 347mW RX: 274mW TX: 251mW RX: 22mW 24 of 28

26 Measurement for IEEE82.11ad/WiGig MCS Modulation Data rate [Mb/s] TX EVM [db] Spec. Meas. 9 QPSK SC QAM SC QAM OFDM MCS9 MCS12 MCS24 Measured by Agilent AWG + Osc. + VSA A in ch.3 25 of 28

27 Data rate [Gb/s] 6GHz CMOS Transceiver First 64QAM 16QAM(4ch bonding) Tokyo Tech Univ. of Toronto UCB NEC SiBeam, CEA-LETI Panasonic Toshiba Year UCB IMEC Broadcom 26 of 28

28 Conclusion A 6GHz direct-conversion transceiver in 65nm CMOS The first 64QAM transceiver (1.56Gbps/ch) IEEE82.11ad/WiGig conformance: MCS1- MCS24(64QAM/OFDM) The first transceiver capable of 4-channel bonding (28.16Gbps by 16QAM) realized by Mixer-first transmitter Open-loop FVF-based baseband amplifier Quadrature injection-locked oscillator 27 of 28

29 Acknowledgement This work was partially supported by MIC, SCOPE, MEXT, STARC, Canon Foundation, and VDEC in collaboration with Cadence Design Systems, Inc., and Agilent Technologies Japan, Ltd. The authors thank Dr. Hirose, Dr. Suzuki, Dr. Sato, and Dr. Kawano of Fujitsu Laboratories, Ltd., and Prof. Ando of Tokyo Institute of Technology for their valuable discussions and technical supports. 28 of 28

30 References [1] K. Okada, et al., A 6GHz 16QAM/8PSK/QPSK/BPSK Direct-Conversion Transceiver for IEEE c, IEEE ISSCC, pp , Feb [2] A. Siligaris, et al., A 65nm CMOS Fully Integrated Transceiver Module for 6GHz Wireless HD Applications, IEEE ISSCC, pp , Feb [3] S. Emami, et al., A 6GHz CMOS Phased-Array Transceiver Pair for Multi-Gb/s Wireless Communications, IEEE ISSCC, pp , Feb [4] K. Okada, et al., A Full 4-Channel 6.3Gb/s 6GHz Direct-Conversion Transceiver with Low-Power Analog and Digital Baseband Circuitry, IEEE ISSCC, pp , Feb [5] S. Kawai, et al., A Digitally-Calibrated 2Gb/s 6GHz Direct-Conversion Transceiver in 65-nm CMOS, IEEE RFIC Symp., pp , June 213. [6] V. Vidojkovic, et al., A Low-Power 57-to-66GHz Transceiver in 4nm LP CMOS with - 17dB EVM at 7Gb/s, IEEE ISSCC, pp , Feb [7] T. Mitomo, et al., A 2Gb/s-Throughput CMOS Transceiver Chipset with In-Package Antenna for 6GHz Short-Range Wireless Communication, IEEE ISSCC, pp , Feb [8] V. Vidojkovic, et al., A Low-Power Radio Chipset in 4nm LP CMOS with Beamforming for 6GHz High-Data-Rate Wireless Communication, IEEE ISSCC, pp , Feb of 28

31 References [9] T. Tsukizawa, et al., A Fully Integrated 6GHz CMOS Transceiver Chipset Based on WiGig/IEEE82.11ad with Built-in Self-Calibration for Mobile Applications, IEEE ISSCC, pp , Feb [1] M. Soer, et al., "A.2-to-2.GHz 65nm CMOS Receiver Without LNA Achieving >11dBm IIP3 and <6.5dB NF," IEEE ISSCC, pp , Feb. 29. [11] C. Andrews, and A.C. Molnar, "A Passive-Mixer-First Receiver with Baseband- Controlled RF Impedance Matching, < 6dB NF, and > 27dBm Wideband IIP3," IEEE ISSCC, pp , Feb 21. [12] R. Carvajal, et al., The Flipped Voltage Follower: A Useful Cell for Low-Voltage Low- Power Circuit Design, IEEE Trans. CAS-I, Vol. 52, No. 7, pp , July 25. [13] K. Okada, et al., Full Four-Channel 6.3-Gb/s 6-GHz CMOS Transceiver with Low- Power Analog and Digital Baseband Circuitry, IEEE JSSC, Vol. 48, No. 1, pp.46-65, Jan of 28

32 Backup slides 31 of 28

33 Setup for TX Measurement Power supply Signal Generator Agilent E8257D Oscilloscope Tektronix DSA7334D (33-GHz BW, 1GS/s) Arbitrary Waveform Generator Tektronix AWG72A (25GS/s) Control signals 36MHz ref. RF board (TX mode) f LO -6GHz (e.g GHz) Attenuator Isolator ATT 6GHz Pre-amplifier B&Z BZP14UD1 (.1GHz-4GHz) Millitech Mixer MXP-15-RFSFL Divider Spectrum Analyzer Agilent E4448A Symbol rate: 1.76GS/s (1ch), 7.4GS/s (4ch bonding) Roll-off factor: 25% for WiGig spectrum mask 32 of 28

34 P out [dbm], CG [db] SNDR [db] P out, IM3, Noise Floor [dbm] CG [db] CG [db] Measurement Results ch. 1 ch. 2 ch. 3 ch Frequency [GHz] Conversion gain of Tx CG P out P in [dbm] Output power of Tx Frequency [GHz] Conversion gain of Rx 33 of ch. 1 ch. 2 ch. 3 ch. 4 SNDR P out Noise Floor IM P in [dbm] Output power of Rx