Design and Implementation of Power Efficient RF-Frontends for Short Range Radio Systems
|
|
- Timothy Morris
- 5 years ago
- Views:
Transcription
1 Design and Implementation of Power Efficient RF-Frontends for Short Range Radio Systems Dr.-Ing. Lei Liao Infineon Technologies AG
2 Outline Introduction Challenges of Low Power Hardware Design The LPRF Project System Concept Hardware Demonstration Prototype of LPRF V.1 Implementation and characterization Prototype of LPRF V.2 Design and post-layout verification Investigation of Passive Sliding IF Mixer Topologies Conclusions Page 2
3 Introduction Wireless Radio System Page 3
4 Challenges of Low Power Hardware Design Compliance of most suitable standards IEEE /6 group: WPAN/Zigbee, SUN, Bluetooth etc. Ultra-low power consumption P=UI U I => P Low cost Using time, System power efficiency, Circuit robustness, PMU design effort High integration rate, Die area, External elements, Process R&D Page 4
5 The LPRF Project LPRF V.1 Fulfill the Bluetooth low energy standard Minimize RX power consumption Product orientated Investigate the circuit robustness LPRF V.2 Support multi-band multi-standard application System-level energy efficient Product orientated Highly integrated Page 5
6 System Concept of RX LPRF V.1 -f RF 0 f RF 0 Analog Digital Bandselect Filter 0 90 A D DSP LO LNA LPF VGA (a) Zero IF Receiver A D -f RF 0 f RF 0 IF Bandselect Filter LO LNA 0 90 BPF VGA (b) Low IF Receiver Analog Digital A D A D Low IF receiver: Less DC offset Less Flicker noise Power DSP Target Spec BTLE NF : ~11dB 29dB RX Gain: >40dB RX IIP3: -31dBm -35dBm f RFin GHz BW BB 1.3MHz Pdiss: <5mW Page 6
7 Hardware Implementation of LPRF V.1 PLL out 3W Bus data input Demod data output VDD PLL VDD ADC PLL 3W-Interface MODEM VDD RFFED VDD Digital A D RFin 0 :2 90 A D I bias I mess BIAS LNA Mixer PPF Low power design! LO ext BBI/Q mess & BBI/Q ext ΣΔADC out Page 7
8 Hardware Implementation of LPRF V.1 Capacitive Cross-Coupled CG-LNA under Low Power condition R u n s VDD L load µ = db σ = db N = 500 T = µ = 3. 2 db σ = db N = 500 T = 27 RF out RF outx V bias,casc M1 M3 M2 I 1 I 2 RF in C c,casc C V c,casc bias,in Gain [ db ] RF inx C c,in C c,in L s M4 I1[mA] Runs NF [ db ] Standard deviation: σ Gain 2.88 db, σ NF 1.27 db Not robust enough due to DC current variations! Page 8
9 Hardware Implementation of LPRF V.1 Improvement of Cross-Coupled CG-LNA VDD L load RF out RF outx V bias,casc M1 M2 I 1 I 2 C V bias,in c,casc C c,casc M3 M4 I bias I1[mA] µ=22.77 db σ=0.602 db N=500 T=27 Runs w/o current bias /w current bias Standard deviation: σ Gain db, σ NF 0.083dB Significantly improved! µ=2.925 db σ=83.7 mdb N=500 T=27 RF in RF inx C c,in C c,in Runs Current bias <1:32> M5 L s M6 Gain [db] LNA NF [db] Page 9
10 Hardware Implementation of LPRF V.1 Baseband Circuit BW/IF Tuning (900 khz -2 MHz) I - path Q - path V trim 4 C m C m Cross coupling resistors V CM LO + R 4 R 5 R Q C 0 C 0 R 1 R 2 R 3 C 0 LNA out LO - V CM LO + Passive mixer Baseband filter 6x Low power opamp Page 10
11 Hardware Implementation of LPRF V.1 Chip & PCB PLL out 3W Bus data input PLL & TX Digtal Demodulator & 3Wire Bus CLK ref LNA Mixer Baseband Filter BIAS Measurement driver ΣΔ ADC RFin BBI/Qmess & BBI/Qext 1200um 800um LNA Mixer Baseband Filter M e a s u r e m e n t D r i v e r LO ext 130 nm CMOS 1.2 V supply LNA 0.36x0.8 mm² BB filter 0.55x0.76 mm² QFN 48 package FR4 substrate Page 11
12 Hardware Implementation of LPRF V.1 Measurement Results -15 Simulated Measured extr. sim Measured S11 [db] -25 RX NF [db] Frequency [GHz] Frequency [MHz] 50 extr. sim Measured RX Gain [db] RX Gain [db] Pout [dbm] Frequency [MHz] st 3rd IIP3=-21.7dBm BER [%] Frequency [MHz] BER@ 2.403GHz 2.423GHz 2.443GHz 2.463GHz 2.483GHz Spec P in [dbm] Input power [dbm] Page 12
13 Hardware Implementation of LPRF V.1 Discussion Receiver frontend meets desired requirement Optimized circuit robustness P RX < 3.5 mw (w/o. LO drivers) Testchip fulfills BTLE/BT standard First time right design LO path dissipate more than 2 mw An improvement is needed! Page 13
14 Hardware Implementation of LPRF V.2 Low Band (Low IF RX) 800 MHz receiver frontend Sub-GHz FB-LNA Passive I/Q mixer Analog baseband RF 800M : RX mode selector Multi-mode PPF BBI Passive SIF mixer RF 2.4G 2.4GHz CG LNA : BBQ LO ext /LO PLL High Band (Passive SIF RX) 1.6GHz LO path 2.4GHz receiver frontend Bandgap/bias 3-wire bus interface Page 14
15 Hardware Implementation of LPRF V.2 RF 800M 800 MHz receiver frontend Sub-GHz FB-LNA Passive I/Q mixer : RX mode selector Analog baseband Multi-mode PPF BBI M1 M0 b2 b1 Multi-mode PPF b0 Passive SIF mixer RF 2.4G 2.4GHz CG LNA : BBQ Vhgain Vhgain VLLIF R2 R5 Cω R4 Cω LO ext /LO PLL VDD 1.6GHz LO path 2.4GHz receiver frontend High Band LNA Bandgap/bias Low Band LNA 3-wire bus interface VLLIF VBBI IN VBBI INX R1 R3 Cω R6 RCC1 RCC2 RCC2 VBBI outx VBBI out RFout Lload RFoutx CFB Vbias,casc AVDD CFB AVDD VBBQ IN VBBQ outx 1st stage 2nd stage VBBQ INX VBBQ out M1 M2 R1 R2 R3 R4 I1 Cc,casc Vbias,in Cc,casc I2 RX800in RX800outx RX800out Vhgain Vhgain VLLIF RX800inx Ibias M3 M4 RCM RCM M1 M2 M3 M4 RFin Ibias25u ICM25u I= 1.2 ma I= 1 ma b0 Cc,in Cc,in M5 M6 b1 RFinx Ls AVSS b2 Current bias <1:32> M5 M6 M0 M1 Page 15
16 Hardware Implementation of LPRF V.2 Top-Level Implementation DC bias block RF in 2nd stage C fb LB RX Supply ring ESD LB- LNA Passive I/Q Mixer Baseband filter PAD PAD PAD 90 µm R L,1st 1st Mixer RF in 2nd Mixer DC bias resistors DC bias resistors 1st stage 260 µm 100 µm MIM cap MIM cap BBI out BBQ out LO 1.6G input RF out LO800MHz 0 LO800MHz µm Frequency divider R L,2nd HB LNA Sliding IF Mixer PLL RF-Frontend 2.4 GHz RX Baseband filter Digital Baseband ADC Switched capacitors Filter Opamps Switched capacitors Resistors TX 560 µm I path Q path 620 µm Page 16
17 Hardware Implementation of LPRF V.2 RX Performance V.2 vs V.1 Integration of sub-gigahertz band Flexible bandwidth Reduced power consumption of LO path (V.1:2.6mW, V.2: 0.6mW) Total power consumption of RF frontend reduced (V.1: HB< 3.5mW, V.2: HB<3mW, LB<4.5mW) Improvement of all performance NF, gain, linearity Active area of RF frontend increased 5% Integration of bias and reference circuit Page 17
18 Investigation of Passive Sliding IF Mixer Topology Regular passive SIF M A2 Lower LO frequency Power efficient A1 Gain/NF sensitive to LO 0.5S 0.5A1 0.5A2 0.25S 0.25S 0.25S 0.125S * * * * -f LO1 -f LO2 f LO2 f S LO1 f RF 0.5S Extra phase control circuit Sensitive to parasitic -0.5A2 Fully quadrature SIF approach M A 2 A 1 Sensitive to Layout Lower LO frequency Power efficient 0.5S 0.5A 1 0.5A S * * * * 0.5S 0.5S -f LO1 -f -0.25S LO2 f LO2 f LO1-0.5A 1-0.5A 2 f RF 0.5S Better Gain/NF NOT sensitive to parasitic Less layout effort How should this circuit looks like? Page 18
19 Conclusion Investigation of low power receiver frontend structure Implementation of multi-mode,band receiver Investigation and improvement of RF frontend under ultra-low power condition Investigation of various passive SIF mixer topologies Development of accurate mathematical model for analyzing SIF mixer Implementation of worldwide first double quadrature passive sliding IF mixer Page 19
20 Thank you! Page 20
EECS 290C: Advanced circuit design for wireless Class Final Project Due: Thu May/02/2019
EECS 290C: Advanced circuit design for wireless Class Final Project Due: Thu May/02/2019 Project: A fully integrated 2.4-2.5GHz Bluetooth receiver. The receiver has LNA, RF mixer, baseband complex filter,
More informationADI 2006 RF Seminar. Chapter II RF/IF Components and Specifications for Receivers
ADI 2006 RF Seminar Chapter II RF/IF Components and Specifications for Receivers 1 RF/IF Components and Specifications for Receivers Fixed Gain and Variable Gain Amplifiers IQ Demodulators Analog-to-Digital
More informationAnalog and RF circuit techniques in nanometer CMOS
Analog and RF circuit techniques in nanometer CMOS Bram Nauta University of Twente The Netherlands http://icd.ewi.utwente.nl b.nauta@utwente.nl UNIVERSITY OF TWENTE. Outline Introduction Balun-LNA-Mixer
More informationA 1.7-to-2.2GHz Full-Duplex Transceiver System with >50dB Self-Interference Cancellation over 42MHz Bandwidth
A 1.7-to-2.2GHz Full-Duplex Transceiver System with >50dB Self-Interference Cancellation Tong Zhang, Ali Najafi, Chenxin Su, Jacques C. Rudell University of Washington, Seattle Feb. 8, 2017 International
More information24 GHz ISM Band Integrated Transceiver Preliminary Technical Documentation MAIC
FEATURES Millimeter-wave (mmw) integrated transceiver Direct up and down conversion architecture 24 GHz ISM band 23.5-25.5 GHz frequency of operation 1.5 Volt operation, low-power consumption LO Quadrature
More informationResearch and Development Activities in RF and Analog IC Design. RFIC Building Blocks. Single-Chip Transceiver Systems (I) Howard Luong
Research and Development Activities in RF and Analog IC Design Howard Luong Analog Research Laboratory Department of Electrical and Electronic Engineering Hong Kong University of Science and Technology
More informationECEN620: Network Theory Broadband Circuit Design Fall 2014
ECEN60: Network Theory Broadband Circuit Design Fall 014 Lecture 13: Frequency Synthesizer Examples Sam Palermo Analog & Mixed-Signal Center Texas A&M University Agenda Frequency Synthesizer Examples Design
More informationAn All CMOS, 2.4 GHz, Fully Adaptive, Scalable, Frequency Hopped Transceiver
An All CMOS, 2.4 GHz, Fully Adaptive, Scalable, Frequency Hopped Transceiver Farbod Behbahani John Leete Alexandre Kral Shahrzad Tadjpour Karapet Khanoyan Paul J. Chang Hooman Darabi Maryam Rofougaran
More informationFD-SOI FOR RF IC DESIGN. SITRI LETI Workshop Mercier Eric 08 september 2016
FD-SOI FOR RF IC DESIGN SITRI LETI Workshop Mercier Eric 08 september 2016 UTBB 28 nm FD-SOI : RF DIRECT BENEFITS (1/2) 3 back-end options available Routing possible on the AluCap level no restriction
More informationChapter 6. Case Study: 2.4-GHz Direct Conversion Receiver. 6.1 Receiver Front-End Design
Chapter 6 Case Study: 2.4-GHz Direct Conversion Receiver The chapter presents a 0.25-µm CMOS receiver front-end designed for 2.4-GHz direct conversion RF transceiver and demonstrates the necessity and
More information5.4: A 5GHz CMOS Transceiver for IEEE a Wireless LAN
5.4: A 5GHz CMOS Transceiver for IEEE 802.11a Wireless LAN David Su, Masoud Zargari, Patrick Yue, Shahriar Rabii, David Weber, Brian Kaczynski, Srenik Mehta, Kalwant Singh, Sunetra Mendis, and Bruce Wooley
More informationISSCC 2003 / SESSION 20 / WIRELESS LOCAL AREA NETWORKING / PAPER 20.2
ISSCC 2003 / SESSION 20 / WIRELESS LOCAL AREA NETWORKING / PAPER 20.2 20.2 A Digitally Calibrated 5.15-5.825GHz Transceiver for 802.11a Wireless LANs in 0.18µm CMOS I. Bouras 1, S. Bouras 1, T. Georgantas
More informationFrequency Synthesizers for RF Transceivers. Domine Leenaerts Philips Research Labs.
Frequency Synthesizers for RF Transceivers Domine Leenaerts Philips Research Labs. Purpose Overview of synthesizer architectures for RF transceivers Discuss the most challenging RF building blocks Technology
More informationRFIC Design for Wireless Communications
RFIC Design for Wireless Communications VLSI Design & Test Seminar, April 19, 2006 Foster Dai 1. An MIMO Multimode WLAN RFIC 2. A Σ Direct Digital Synthesizer IC Foster Dai, April, 2006 1 1. Dave An MIMO
More informationCMOS RFIC Design for Direct Conversion Receivers. Zhaofeng ZHANG Supervisor: Dr. Jack Lau
CMOS RFIC Design for Direct Conversion Receivers Zhaofeng ZHANG Supervisor: Dr. Jack Lau Outline of Presentation Background Introduction Thesis Contributions Design Issues and Solutions A Direct Conversion
More informationReceiver Architecture
Receiver Architecture Receiver basics Channel selection why not at RF? BPF first or LNA first? Direct digitization of RF signal Receiver architectures Sub-sampling receiver noise problem Heterodyne receiver
More informationA low-if 2.4 GHz Integrated RF Receiver for Bluetooth Applications Lai Jiang a, Shaohua Liu b, Hang Yu c and Yan Li d
Applied Mechanics and Materials Online: 2013-06-27 ISSN: 1662-7482, Vol. 329, pp 416-420 doi:10.4028/www.scientific.net/amm.329.416 2013 Trans Tech Publications, Switzerland A low-if 2.4 GHz Integrated
More informationA GSM Band Low-Power LNA 1. LNA Schematic
A GSM Band Low-Power LNA 1. LNA Schematic Fig1.1 Schematic of the Designed LNA 2. Design Summary Specification Required Simulation Results Peak S21 (Gain) > 10dB >11 db 3dB Bandwidth > 200MHz (
More informationEffects of Mismatch on CMOS Monolithic Mixers Image Rejection
Effects of Mismatch on CMOS Monolithic Mixers Image Rejection Fernando Azevedo, M. João Rosário, J. Costa Freire Instituto Superior de Engenharia de Lisboa, Instituto Superior Técnico,,3 Instituto de Telecomunicações,
More informationHot Topics and Cool Ideas in Scaled CMOS Analog Design
Engineering Insights 2006 Hot Topics and Cool Ideas in Scaled CMOS Analog Design C. Patrick Yue ECE, UCSB October 27, 2006 Slide 1 Our Research Focus High-speed analog and RF circuits Device modeling,
More informationPassive Device Characterization for 60-GHz CMOS Power Amplifiers
Passive Device Characterization for 60-GHz CMOS Power Amplifiers Kenichi Okada, Kota Matsushita, Naoki Takayama, Shogo Ito, Ning Li, and Akira Tokyo Institute of Technology, Japan 2009/4/20 Motivation
More informationFEATURES DESCRIPTION BENEFITS APPLICATIONS. Preliminary PT4501 Sub-1 GHz Wideband FSK Transceiver
Preliminary PT4501 Sub-1 GHz Wideband FSK Transceiver DESCRIPTION The PT4501 is a highly integrated wideband FSK multi-channel half-duplex transceiver operating in sub-1 GHz license-free ISM bands. The
More informationRadar System Design Considerations -- System Modeling Findings (MOS-AK Conference Hangzhou 2017)
Radar System Design Considerations -- System Modeling Findings (MOS-AK Conference Hangzhou 2017) Silicon Radar GmbH Im Technologiepark 1 15236 Frankfurt (Oder) Germany Outline 1 Introduction to Short Distance
More informationLow-Voltage IF Transceiver with Limiter/RSSI and Quadrature Modulator
19-1296; Rev 2; 1/1 EVALUATION KIT MANUAL FOLLOWS DATA SHEET Low-Voltage IF Transceiver with General Description The is a highly integrated IF transceiver for digital wireless applications. It operates
More informationDesign Considerations for 5G mm-wave Receivers. Stefan Andersson, Lars Sundström, and Sven Mattisson
Design Considerations for 5G mm-wave Receivers Stefan Andersson, Lars Sundström, and Sven Mattisson Outline Introduction to 5G @ mm-waves mm-wave on-chip frequency generation mm-wave analog front-end design
More informationBluetooth Receiver. Ryan Rogel, Kevin Owen I. INTRODUCTION
1 Bluetooth Receiver Ryan Rogel, Kevin Owen Abstract A Bluetooth radio front end is developed and each block is characterized. Bits are generated in MATLAB, GFSK endcoded, and used as the input to this
More informationDual-Frequency GNSS Front-End ASIC Design
Dual-Frequency GNSS Front-End ASIC Design Ed. 01 15/06/11 In the last years Acorde has been involved in the design of ASIC prototypes for several EU-funded projects in the fields of FM-UWB communications
More informationA 5 GHz CMOS Low Power Down-conversion Mixer for Wireless LAN Applications
Proceedings of the 5th WSEAS Int. Conf. on CIRCUITS, SYSTES, ELECTRONICS, CONTROL & SIGNAL PROCESSING, Dallas, USA, November 1-, 2006 26 A 5 GHz COS Low Power Down-conversion ixer for Wireless LAN Applications
More informationSession 3. CMOS RF IC Design Principles
Session 3 CMOS RF IC Design Principles Session Delivered by: D. Varun 1 Session Topics Standards RF wireless communications Multi standard RF transceivers RF front end architectures Frequency down conversion
More informationA 1MHz-64MHz Active RC TI-LPF with Variable Gain for SDR Receiver in 65-nm CMOS
2017 5th International Conference on Computer, Automation and Power Electronics (CAPE 2017) A 1MHz-64MHz Active RC TI-LPF with Variable Gain for SDR Receiver in 65-nm CMOS Chaoxuan Zhang1, a, *, Xunping
More informationA 2.4-GHz 24-dBm SOI CMOS Power Amplifier with Fully Integrated Output Balun and Switched Capacitors for Load Line Adaptation
A 2.4-GHz 24-dBm SOI CMOS Power Amplifier with Fully Integrated Output Balun and Switched Capacitors for Load Line Adaptation Francesco Carrara 1, Calogero D. Presti 2,1, Fausto Pappalardo 1, and Giuseppe
More information22. VLSI in Communications
22. VLSI in Communications State-of-the-art RF Design, Communications and DSP Algorithms Design VLSI Design Isolated goals results in: - higher implementation costs - long transition time between system
More informationA Digitally-Calibrated 20-Gb/s 60-GHz Direct-Conversion Transceiver in 65-nm CMOS
A Digitally-Calibrated 20-Gb/s 60-GHz Direct-Conversion Transceiver in 65-nm CMOS Seitaro Kawai, Ryo Minami, Yuki Tsukui, Yasuaki Takeuchi, Hiroki Asada, Ahmed Musa, Rui Murakami, Takahiro Sato, Qinghong
More informationT. Taris, H. Kraïmia, JB. Begueret, Y. Deval. Bordeaux, France. 12/15-16, 2011 Lauzanne, Switzerland
1 MOSFET Modeling for Ultra Low-Power RF Design T. Taris, H. Kraïmia, JB. Begueret, Y. Deval Bordeaux, France 2 Context More services in Environment survey Energy management Process optimisation Aging
More informationEuropean Conference on Nanoelectronics and Embedded Systems for Electric Mobility
European Conference on Nanoelectronics and Embedded Systems for Electric Mobility ecocity emotion 24-25 th September 2014, Erlangen, Germany Low Power Consideration in Transceiver Design for Internet of
More informationRDA1845 SINGLE CHIP TRANSCEIVER FOR WALKIE TALKIE. 1. General Description. Rev.1.0 Feb.2008
RDA1845 SINGLE CHIP TRANSCEIVER FOR WALKIE TALKIE Rev.1.0 Feb.2008 1. General Description The RDA1845 is a single-chip transceiver for Walkie Talkie with fully integrated synthesizer, IF selectivity and
More informationFeatures. = +25 C, Vdd = +4V, Idd = 90 ma [2]
v.91 HMCLCB AMPLIFIER, 1-27 GHz Typical Applications This HMCLCB is ideal for: Features Noise Figure: 2.2 db @ 2 GHz Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation
More informationFEATURES APPLICATIO S. LT GHz to 1.4GHz High Linearity Upconverting Mixer DESCRIPTIO TYPICAL APPLICATIO
FEATURES Wide RF Frequency Range:.7GHz to.ghz 7.dBm Typical Input IP at GHz On-Chip RF Output Transformer On-Chip 5Ω Matched LO and RF Ports Single-Ended LO and RF Operation Integrated LO Buffer: 5dBm
More informationRadio Research Directions. Behzad Razavi Communication Circuits Laboratory Electrical Engineering Department University of California, Los Angeles
Radio Research Directions Behzad Razavi Communication Circuits Laboratory Electrical Engineering Department University of California, Los Angeles Outline Introduction Millimeter-Wave Transceivers - Applications
More informationChallenges in Designing CMOS Wireless System-on-a-chip
Challenges in Designing CMOS Wireless System-on-a-chip David Su Atheros Communications Santa Clara, California IEEE Fort Collins, March 2008 Introduction Outline Analog/RF: CMOS Transceiver Building Blocks
More informationDESCRIPTIO APPLICATIO S. LTC5531 Precision 300MHz to 7GHz RF Detector with Shutdown and Offset Adjustment FEATURES TYPICAL APPLICATIO
LTC553 Precision 3MHz to 7GHz RF Detector with Shutdown and Offset Adjustment FEATURES Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 3MHz to 7GHz* Wide Input Power
More informationA CMOS Frequency Synthesizer with an Injection-Locked Frequency Divider for a 5 GHz Wireless LAN Receiver. Hamid Rategh
A CMOS Frequency Synthesizer with an Injection-Locked Frequency Divider for a 5 GHz Wireless LAN Receiver Hamid Rategh Center for Integrated Systems Stanford University OUTLINE Motivation Introduction
More informationInsights Into Circuits for Frequency Synthesis at mm-waves Andrea Mazzanti Università di Pavia, Italy
RFIC2014, Tampa Bay June 1-3, 2014 Insights Into Circuits for Frequency Synthesis at mm-waves Andrea Mazzanti Università di Pavia, Italy High data rate wireless networks MAN / LAN PAN ~7GHz of unlicensed
More informationMillimeter-Wave Amplifiers for E- and V-band Wireless Backhaul Erik Öjefors Sivers IMA AB
Millimeter-Wave Amplifiers for E- and V-band Wireless Backhaul Erik Öjefors Sivers IMA AB THz-Workshop: Millimeter- and Sub-Millimeter-Wave circuit design and characterization 26 September 2014, Venice
More informationIncluding the proper parasitics in a nonlinear
Effects of Parasitics in Circuit Simulations Simulation accuracy can be improved by including parasitic inductances and capacitances By Robin Croston California Eastern Laboratories Including the proper
More informationConstructing Complete Radio Frequency Receiver for LTE TDD Transceiver
Constructing Complete Radio Frequency Receiver for LTE TDD Transceiver Dalia Sadek Ain shams university Cairo - Egypt Heba A. Shawkey Electronics Research Institute (ERI) Giza Egypt Abdelhalim Zekry Ain
More informationSignal Integrity Design of TSV-Based 3D IC
Signal Integrity Design of TSV-Based 3D IC October 24, 21 Joungho Kim at KAIST joungho@ee.kaist.ac.kr http://tera.kaist.ac.kr 1 Contents 1) Driving Forces of TSV based 3D IC 2) Signal Integrity Issues
More informationLow-Noise Amplifiers
007/Oct 4, 31 1 General Considerations Noise Figure Low-Noise Amplifiers Table 6.1 Typical LNA characteristics in heterodyne systems. NF IIP 3 db 10 dbm Gain 15 db Input and Output Impedance 50 Ω Input
More informationELEN 701 RF & Microwave Systems Engineering. Lecture 2 September 27, 2006 Dr. Michael Thorburn Santa Clara University
ELEN 701 RF & Microwave Systems Engineering Lecture 2 September 27, 2006 Dr. Michael Thorburn Santa Clara University Lecture 2 Radio Architecture and Design Considerations, Part I Architecture Superheterodyne
More informationA 3-6 Ghz Current Reuse Noise Cancelling Low Noise Amplifier For WLAN And WPAN Application
RESEARCH ARTICLE OPEN ACCESS A 3-6 Ghz Current Reuse Noise Cancelling Low Noise Amplifier For WLAN And WPAN Application Shivabhakt Mhalasakant Hanamant [1], Dr.S.D.Shirbahadurakar [2] M.E Student [1],
More informationAL2230S Single Chip Transceiver for 2.4GHz b/g Applications (AIROHA)
AL2230S Single Chip Transceiver for 2.4GHz 802.11b/g Applications (AIROHA) AL2230S Datasheet MP v1.00-1 - This document is commercially confidential and must NOT be disclosed to third parties without prior
More informationDESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM
Progress In Electromagnetics Research C, Vol. 9, 25 34, 2009 DESIGN OF 3 TO 5 GHz CMOS LOW NOISE AMPLIFIER FOR ULTRA-WIDEBAND (UWB) SYSTEM S.-K. Wong and F. Kung Faculty of Engineering Multimedia University
More informationMeasurement and Modeling of CMOS Devices in Short Millimeter Wave. Minoru Fujishima
Measurement and Modeling of CMOS Devices in Short Millimeter Wave Minoru Fujishima Our position We are circuit designers. Our final target is not device modeling, but chip demonstration. Provided device
More information20 GHz Low Power QVCO and De-skew Techniques in 0.13µm Digital CMOS. Masum Hossain & Tony Chan Carusone University of Toronto
20 GHz Low Power QVCO and De-skew Techniques in 0.13µm Digital CMOS Masum Hossain & Tony Chan Carusone University of Toronto masum@eecg.utoronto.ca Motivation Data Rx3 Rx2 D-FF D-FF Rx1 D-FF Clock Clock
More informationLow-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity
Low-Power RF Integrated Circuit Design Techniques for Short-Range Wireless Connectivity Marvin Onabajo Assistant Professor Analog and Mixed-Signal Integrated Circuits (AMSIC) Research Laboratory Dept.
More information5.5: A 3.2 to 4GHz, 0.25µm CMOS Frequency Synthesizer for IEEE a/b/g WLAN
5.5: A 3.2 to 4GHz, 0.25µm CMOS Frequency Synthesizer for IEEE 802.11a/b/g WLAN Manolis Terrovitis, Michael Mack, Kalwant Singh, and Masoud Zargari 1 Atheros Communications, Sunnyvale, California 1 Atheros
More informationISSCC 2006 / SESSION 33 / MOBILE TV / 33.4
33.4 A Dual-Channel Direct-Conversion CMOS Receiver for Mobile Multimedia Broadcasting Vincenzo Peluso, Yang Xu, Peter Gazzerro, Yiwu Tang, Li Liu, Zhenbiao Li, Wei Xiong, Charles Persico Qualcomm, San
More informationKeywords: GPS, receiver, GPS receiver, MAX2769, 2769, 1575MHz, Integrated GPS Receiver, Global Positioning System
Maxim > Design Support > Technical Documents > User Guides > APP 3910 Keywords: GPS, receiver, GPS receiver, MAX2769, 2769, 1575MHz, Integrated GPS Receiver, Global Positioning System USER GUIDE 3910 User's
More informationDemo board DC365A Quick Start Guide.
August 02, 2001. Demo board DC365A Quick Start Guide. I. Introduction The DC365A demo board is intended to demonstrate the capabilities of the LT5503 RF transmitter IC. This IC incorporates a 1.2 GHz to
More informationFlexible CMOS Frequency Translation Circuits
Flexible CMOS Frequency Translation Circuits Eric Klumperink Zhiyu Ru, Michiel Soer, Bram Nauta 1 Outline Intro Analog Front Ends for SDR Interferer robust SDR Receiver analog part Interferer robust SDR
More informationA 24-GHz Quadrature Receiver Front-end in 90-nm CMOS
A 24GHz Quadrature Receiver Frontend in 90nm CMOS Törmänen, Markus; Sjöland, Henrik Published in: Proc. 2009 IEEE Asia Pacific Microwave Conference Published: 20090101 Link to publication Citation for
More informationDESCRIPTIO APPLICATIO S. LTC5530 Precision 300MHz to 7GHz RF Detector with Shutdown and Gain Adjustment FEATURES TYPICAL APPLICATIO
Precision 3MHz to 7GHz RF Detector with Shutdown and Gain Adjustment FEATURES Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 3MHz to 7GHz* Wide Input Power Range:
More informationReconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS
Reconfigurable and Simultaneous Dual Band Galileo/GPS Front-end Receiver in 0.13µm RFCMOS A. Pizzarulli 1, G. Montagna 2, M. Pini 3, S. Salerno 4, N.Lofu 2 and G. Sensalari 1 (1) Fondazione Torino Wireless,
More informationFeatures. The Hmc6001LP711E is ideal for: OBSOLETE
Millimeterwave Receiver Typical Applications Features The Hmc61LP711E is ideal for: WiGig Single Carrier Modulations 6 GHz ISM Band Data Transmitter Multi-Gbps Data Communications High Definition Video
More informationmm-wave Transceiver Challenges for the 5G and 60GHz Standards Prof. Emanuel Cohen Technion
mm-wave Transceiver Challenges for the 5G and 60GHz Standards Prof. Emanuel Cohen Technion November 11, 11, 2015 2015 1 mm-wave advantage Why is mm-wave interesting now? Available Spectrum 7 GHz of virtually
More informationRF2418 LOW CURRENT LNA/MIXER
LOW CURRENT LNA/MIXER RoHS Compliant & Pb-Free Product Package Style: SOIC-14 Features Single 3V to 6.V Power Supply High Dynamic Range Low Current Drain High LO Isolation LNA Power Down Mode for Large
More informationA Low Power 900MHz Superheterodyne Compressive Sensing Receiver for Sparse Frequency Signal Detection
A Low Power 900MHz Superheterodyne Compressive Sensing Receiver for Sparse Frequency Signal Detection Hamid Nejati and Mahmood Barangi 4/14/2010 Outline Introduction System level block diagram Compressive
More informationSiNANO-NEREID Workshop:
SiNANO-NEREID Workshop: Towards a new NanoElectronics Roadmap for Europe Leuven, September 11 th, 2017 WP3/Task 3.2 Connectivity RF and mmw Design Outline Connectivity, what connectivity? High data rates
More informationWireless Energy for Battery-less Sensors
Wireless Energy for Battery-less Sensors Hao Gao Mixed-Signal Microelectronics Outline System of Wireless Power Transfer (WPT) RF Wireless Power Transfer RF Wireless Power Transfer Ultra Low Power sions
More information65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers
65-GHz Receiver in SiGe BiCMOS Using Monolithic Inductors and Transformers Michael Gordon, Terry Yao, Sorin P. Voinigescu University of Toronto March 10 2006, UBC, Vancouver Outline Motivation mm-wave
More informationLTC5585 Wideband IQ Demodulator with IIP2 and DC Offset Control. Applications. Typical Application
Features n 7MHz to 3GHz Operating Frequency n High IIP3: 8.7dBm at 7MHz,.7dBm at 1.9GHz n High IIP: 7dBm at 7MHz, 6dBm at 1.9GHz n User Adjustable IIP Up to 8dBm n User Adjustable DC Offset Null n High
More informationISSCC 2006 / SESSION 20 / WLAN/WPAN / 20.5
20.5 An Ultra-Low Power 2.4GHz RF Transceiver for Wireless Sensor Networks in 0.13µm CMOS with 400mV Supply and an Integrated Passive RX Front-End Ben W. Cook, Axel D. Berny, Alyosha Molnar, Steven Lanzisera,
More information20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS
Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software
More informationSynthesis of Optimal On-Chip Baluns
Synthesis of Optimal On-Chip Baluns Sharad Kapur, David E. Long and Robert C. Frye Integrand Software, Inc. Berkeley Heights, New Jersey Yu-Chia Chen, Ming-Hsiang Cho, Huai-Wen Chang, Jun-Hong Ou and Bigchoug
More informationPackaged mm-wave GaN, GaAs and Si ICs for 5G and automotive radar
Packaged mm-wave GaN, GaAs and Si ICs for 5G and automotive radar Eric Leclerc UMS 1 st Nov 2018 Outline Why heterogenous integration? About UMS Technology portfolio Design tooling: Cadence / GoldenGate
More informationDESCRIPTIO FEATURES APPLICATIO S. LT GHz to 2.7GHz Receiver Front End TYPICAL APPLICATIO
1.GHz to 2.GHz Receiver Front End FEATURES 1.V to 5.25V Supply Dual LNA Gain Setting: +13.5dB/ db at Double-Balanced Mixer Internal LO Buffer LNA Input Internally Matched Low Supply Current: 23mA Low Shutdown
More information95GHz Receiver with Fundamental Frequency VCO and Static Frequency Divider in 65nm Digital CMOS
95GHz Receiver with Fundamental Frequency VCO and Static Frequency Divider in 65nm Digital CMOS Ekaterina Laskin, Mehdi Khanpour, Ricardo Aroca, Keith W. Tang, Patrice Garcia 1, Sorin P. Voinigescu University
More informationFeatures OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
More informationFeatures. = +25 C, IF = 100 MHz, LO = +13 dbm, LSB [1]
v1.6 3.5 - GHz Typical Applications The HMC21BMSGE is ideal for: Base stations, Repeaters & Access Points WiMAX, WiBro & Fixed Wireless Portables & Subscribers PLMR, Public Safety & Telematics Functional
More informationSYSTEM LEVEL ANALYSIS OF A DIRECT-CONVERSION WIMAX RECEIVER AT 5.3 GHZ AND CORRESPONDING MIXER DESIGN
SYSTEM LEVEL ANALYSIS OF A DIRECT-CONVERSION WIMAX RECEIVER AT 5.3 GHZ AND CORRESPONDING MIXER DESIGN A. ANTONOPOULOS, N. MAVREDAKIS, N. MAKRIS, M. BUCHER TECHNICAL UNIVERSITY OF CRETE, GREECE KEYWORDS:
More informationTANK+ VRLO TANK- GND MAX2104 CPG2 CPG1 RFOUT IDC+ XTLOUT TQFP. Maxim Integrated Products 1
19-1431; Rev 4; 6/05 Direct-Conversion Tuner IC for General Description The low-cost direct-conversion tuner IC is designed for use in digital direct-broadcast satellite (DBS) television set-top box units.
More informationA 0.7 V-to-1.0 V 10.1 dbm-to-13.2 dbm 60-GHz Power Amplifier Using Digitally- Assisted LDO Considering HCI Issues
A 0.7 V-to-1.0 V 10.1 dbm-to-13.2 dbm 60-GHz Power Amplifier Using Digitally- Assisted LDO Considering HCI Issues Rui Wu, Yuuki Tsukui, Ryo Minami, Kenichi Okada, and Akira Matsuzawa Tokyo Institute of
More informationLOW COST PHASED ARRAY ANTENNA TRANSCEIVER FOR WPAN APPLICATIONS
LOW COST PHASED ARRAY ANTENNA TRANSCEIVER FOR WPAN APPLICATIONS Introduction WPAN (Wireless Personal Area Network) transceivers are being designed to operate in the 60 GHz frequency band and will mainly
More informationFeatures. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
v2.917 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multipoint Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram High Output IP3: +28 dbm Single
More informationPulse-Based Ultra-Wideband Transmitters for Digital Communication
Pulse-Based Ultra-Wideband Transmitters for Digital Communication Ph.D. Thesis Defense David Wentzloff Thesis Committee: Prof. Anantha Chandrakasan (Advisor) Prof. Joel Dawson Prof. Charles Sodini Ultra-Wideband
More informationPower Amplifier Linearization using RF Pre-Distortion JUNE, 2012
Power Amplifier Linearization using RF Pre-Distortion JUNE, 2012 1 PA Linearization Overview General principles Overview/Block Diagram of DPD and RFPD RFPAL System architecture & Implementation Predistortion
More informationFrequency Domain UWB Multi-carrier Receiver
Frequency Domain UWB Multi-carrier Receiver Long Bu, Joanne DeGroat, Steve Bibyk Electrical & Computer Engineering Ohio State University Research Purpose Explore UWB multi-carrier receiver architectures
More informationUHF BAND LOW NOISE AMPLIFIER GaAs MMIC
NJGHA UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJGHA is a low noise amplifier GaAs MMIC designed for mobile digital TV application (~ MHz). This IC features good gain flatness, and low
More informationTRA_120_002 Radar Front End 120-GHz Highly Integrated IQ Transceiver with Antennas on Chip in Silicon Germanium Technology
Silicon Radar GmbH Im Technologiepark 1 15236 Frankfurt (Oder) Germany fon +49.335.557 17 60 fax +49.335.557 10 50 http://www.siliconradar.com TRA_120_002 Radar Front End 120-GHz Highly Integrated IQ Transceiver
More informationVariable-gain amplifier design (VGA) a.k.a Programmable-gain amplifier (PGA)
1 ariable-gain amplifier design (GA) a.k.a Programmable-gain amplifier (PGA) 2 GA/PGA design why a GA/PGA is needed? Important GA/PGA specs Commonly used GA/PGA topologies Linear db/ AGC control References
More informationCMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC
CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC Description 17 1 2 3 4 TXRX VDD VDD D 16 15 14 13 12 11 10 ANT 9 The is a fully integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit)
More informationTechnology Trend of Ultra-High Data Rate Wireless CMOS Transceivers
2017.07.03 Technology Trend of Ultra-High Data Rate Wireless CMOS Transceivers Akira Matsuzawa and Kenichi Okada Tokyo Institute of Technology Contents 1 Demand for high speed data transfer Developed high
More informationISSCC 2003 / SESSION 20 / WIRELESS LOCAL AREA NETWORKING / PAPER 20.5
ISSCC 2003 / SESSION 20 / WIRELESS LOCAL AREA NETWORKING / PAPER 20.5 20.5 A 2.4GHz CMOS Transceiver and Baseband Processor Chipset for 802.11b Wireless LAN Application George Chien, Weishi Feng, Yungping
More informationAspemyr, Lars; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik; Ferndal, Mattias; Carchon, G
A 15 GHz and a 2 GHz low noise amplifier in 9 nm RF CMOS Aspemyr, Lars; Jacobsson, Harald; Bao, Mingquan; Sjöland, Henrik; Ferndal, Mattias; Carchon, G Published in: Topical Meeting on Silicon Monolithic
More informationDigitally Enhanced Inter-modulation Distortion Compensation in Wideband Spectrum Sensing. Han Yan and Prof. Danijela Cabric Nov.
Digitally Enhanced Inter-modulation Distortion Compensation in Wideband Spectrum Sensing Han Yan and Prof. Danijela Cabric Nov.9 th 016 1 Challenges of Wideband Spectrum Sensing Rx Signal LNA LO Front-end
More informationA 3 8 GHz Broadband Low Power Mixer
PIERS ONLINE, VOL. 4, NO. 3, 8 361 A 3 8 GHz Broadband Low Power Mixer Chih-Hau Chen and Christina F. Jou Institute of Communication Engineering, National Chiao Tung University, Hsinchu, Taiwan Abstract
More informationmmw to THz ultra high data rate radio access technologies
mmw to THz ultra high data rate radio access technologies Dr. Laurent HERAULT VP Europe, CEA LETI Pierre Vincent Head of RF IC design Lab, CEA LETI Outline mmw communication use cases and standards mmw
More informationAM Tuner Chipset
AM90- Tuner Chipset AM90- is a set of surface mount QFN components that can be integrated to provide a complete high dynamic range miniature tuner covering the 2-MHz to 6-GHz frequency range. The receive
More informationELEN 701 RF & Microwave Systems Engineering. Lecture 4 October 11, 2006 Dr. Michael Thorburn Santa Clara University
ELEN 7 RF & Microwave Systems Engineering Lecture 4 October, 26 Dr. Michael Thorburn Santa Clara University Lecture 5 Receiver System Analysis and Design, Part II Key Parameters Intermodulation Characteristics
More informationIntegrated receivers for mid-band SKA. Suzy Jackson Engineer, Australia Telescope National Facility
Integrated receivers for mid-band SKA Suzy Jackson Engineer, Australia Telescope National Facility ASKAP/SKA Special Technical Brief 23 rd October, 2009 Talk overview Mid band SKA receiver challenges ASKAP
More information