TRA_120_002 Radar Front End 120-GHz Highly Integrated IQ Transceiver with Antennas on Chip in Silicon Germanium Technology

Transcription

1 Silicon Radar GmbH Im Technologiepark Frankfurt (Oder) Germany fon fax TRA_120_002 Radar Front End 120-GHz Highly Integrated IQ Transceiver with Antennas on Chip in Silicon Germanium Technology Preliminary Data Sheet Status: Date: Author: Filename: preliminary Silicon Radar GmbH Datasheet_TRA_120_002_V0.6 Version: Product number: Package: Marking: Page: 0.6 TRA_120_002 QFN32, 5 5 mm² TRA002 YYWW 1 of 17 1

2 120-GHz MMIC IQ Transceiver TRA_120_002 Data Sheet MPW samples, preliminary Version Control Version Changed section Description of change Reason for change 0.5 template added sections version control and document release controlled document 0.6 specification spec data revised routinely revision 2

3 Table of Contents Version Control Features Overview Applications Block Diagram Pin Configuration Pin Assignment Pin Description Specification Absolute Maximum Ratings Operating Range Thermal Resistance Electrical Characteristics Packaging Outline Dimensions Package Code Antenna position Application Application Circuit Evaluation Boards Input / Output Stages Measurement Results DC Current Consumption Measurements Conversion Gain Measurements Transmitter Frequency Measurements Transmitter Power Measurements Disclaimer Document release... Fehler! Textmarke nicht definiert. List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 List of Figures Pin Description... 6 Absolute Maximum Ratings... 7 Operating Range... 7 Thermal Resistance... 7 Electrical Characteristics... 8 Figure 1 TRA_120_002 block diagram... 5 Figure 2 TRA_120_002 pin assignment (QFN32, top view)... 6 Figure 3 Outline dimensions of QFN32 package with exposed pad... 9 Figure 4 Antenna position (top view)... 9 Figure 5 TRA_120_002 Application Circuit Figure 6 Equivalent I/O circuits Figure 7 Power consumption vs. temperature (preliminary) Figure 8 Conversion gain of the receiver (preliminary) Figure 9 VCO tuning curves (preliminary) Figure 10 Full bandwidth VCO tuning (preliminary) Figure 11 VCO pushing (preliminary) Figure 12 VCO pushing - Full bandwidth operation (preliminary) Figure 13 Phase noise of the integrated oscillator at divider output (1.89GHz) (preliminary) Figure 14 Output frequency vs. temperature (preliminary) Figure 15 Output power vs. temperature (preliminary)

4 1.1 Features Radar frontend (RFE) with antennas on chip for 122 GHz ISM band Single supply voltage of 3.3 V Fully ESD protected device Low power consumption of 380 mw Integrated low phase noise push-push VCO Receiver with homodyne quadrature mixer RX and TX dipole antennas Large bandwidth of up to 7 GHz QFN32 leadless plastic package 5 5 mm² Pb-free, RoHS compliant package IC is available as bare die as well 1.2 Overview The RFE is an integrated transceiver circuit for the 122 GHz ISM band with antennas on chip. It includes a low-noise amplifier (LNA), quadrature mixers, poly-phase filter, voltage controlled oscillator with digital band switching, divide by 32 outputs, and transmit and receive antennas (see Figure 1). The RF-signal from oscillator is directed to RX path via buffer circuits. The RX signal is amplified by LNA and converted to baseband in two mixers with quadrature LO. The 120 GHz oscillator has three analog coarse tuning inputs and one analog fine tuning input. The tuning inputs can be combined to obtain large tuning range and large bandwidth. The analog tuning inputs together with integrated frequency divider and external fractional-n PLL can be used for frequency modulated continuous wave (FMCW) radar operation. With fixed oscillator frequency it can be used in continuous wave (CW) mode. Other modulation schemes are possible as well by utilizing analog tuning inputs. The IC is fabricated in IHP SG13S SiGe BiCMOS technology of IHP. 1.3 Applications Main application field of the 120 GHz transceiver radar frontend (RFE) is in short range radar systems. With the use of dielectric lenses, the range can be increased considerably. The RFE can be used in FMCW mode as well in CW-mode. Although the chip is intended for use in ISM band 122 GHz GHz, it is also possible to extend bandwidth to the full tuning range of almost 7 GHz. 4

5 2 Block Diagram Figure 1 TRA_120_002 block diagram 5

6 3 Pin Configuration 3.1 Pin Assignment Figure 2 TRA_120_002 pin assignment (QFN32, top view) 3.2 Pin Description Table 1 Pin Description Pin No. Name Description 2 VCC Supply voltage (3.3 V) 3 IF_Qn Quadrature IF I output, negative terminal (DC coupled) 4 IF_Qp Quadrature IF I output, positive terminal (DC coupled) 5 IF_In Quadrature IF Q output, negative terminal (DC coupled) 6 IF_Ip Quadrature IF Q output, positive terminal (DC coupled) 7 RXen Receiver enable input, low-active CMOS input with internal 70-kΩ pull-down resistor 18 Vt0 VCO tuning input 0 (0 V CC ) 19 Vt1 VCO tuning input 1 (0 V CC ) 20 Vt2 VCO tuning input 2 (0 V CC ) 21 Vt3 VCO tuning input 3 (0 V CC ) 22 divn Divider output, neg. terminal. 50 Ω, DC coupled, external decoupling cap. required 23 divp Divider output, pos. terminal. 50 Ω, DC coupled, external decoupling cap. required 24 DIVen Divider enable input, low-active CMOS input with internal 100-kΩ pull-down resistor 9-16, NC Not connected. These pins may be connected to ground. Performance will not be affected. 1,8, 17 GND Ground pins (33) GND Exposed die attach pad of the QFN package, must be soldered to ground 6

7 4 Specification 4.1 Absolute Maximum Ratings Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Table 2 Absolute Maximum Ratings Parameter Symbol Min Max Unit Condition / Remark Supply voltage V CC 3.6 V to GND DC voltage at tuning inputs V VT -0.3 V CC V Inputs Vt0, Vt1, Vt2, Vt3 DC voltage at control inputs V CTL -0.3 V CC V Inputs DIVen, RXen Junction temperature T J C Storage temperature range T STG C ESD robustness V ESD 1.2 kv Human body model, HBM 1) 1) CLASS 1C according to ESDA/JEDEC Joint Standard for Electrostatic Discharge Sensitivity Testing, Human Body Model Component Level, ANSI/ESDA/JEDEC JS Operating Range Table 3 Operating Range Parameter Symbol Min Max Unit Condition / Remark Ambient temperature T A C Supply voltage V CC V (3.3V ± 5%) DC voltage at tuning inputs V VT 0 V CC V Inputs Vt0 ~ Vt3 DC voltage at control inputs V CTL 0 V CC V Inputs DIVen, RXen 4.3 Thermal Resistance Table 4 Thermal Resistance Parameter Symbol Min Typ Max Unit Condition / Remark Thermal resistance from junction to soldering point R thjs - - tbd K/W 7

8 4.4 Electrical Characteristics T A = -40 C ~ +85 C unless otherwise noted. Typical values measured at T A = 25 C and V CC = 3.3 V. Table 5 Electrical Characteristics Parameter Symbol Min Typ Max Unit Condition / Remark DC Parameters Supply current consumption I CC ma RX, Divider enabled DIVen input voltage, low level DIVen input voltage, high level RXen input voltage, low level RXen input voltage, high level V DIVen_L 0 V DIVen_H 0.7 V CC V RXen_L 0 V RXen_H V CC V CC V Input DIVen V CC V Input DIVen 0.5 V CC V Input RXen V CC V Input RXen VCO tuning voltage V VT 0 V CC V Inputs Vt0 ~ Vt3 RF Parameters Start Frequency f TX GHz Vt0 = Vt1 = Vt2 = Vt3 = 0 Stop Frequency f TX GHz Vt0 = Vt1 = Vt2 = Vt3 = Vcc = 3.3 V VCO tuning bandwidth, Vt0 Δf TX-VT0 720 MHz Middle band slope 290 MHz/V VCO tuning bandwidth, Vt1 Δf TX-VT1 750 MHz Middle band slope 300 MHz/V VCO tuning bandwidth, Vt2 Δf TX-VT MHz Middle band slope 630 MHz/V VCO tuning bandwidth, Vt3 Δf TX-VT MHz Middle band slope 1380 MHz/V VCO tuning full bandwidth Δf TX GHz Vt0 ~ Vt3 interconnected Number adjustable frequency bands 8 Vt1 ~ Vt3 used for band switching Pushing VCO Δf TX / ΔV CC 27 MHz/V Phase noise P N dbc/hz at 1MHz offset Transmitter output power P TX dbm Measured without antennas Divider division ratio of TX N DIV 64 signal Divider output power 1) P DIV dbm Note 1 Divider output frequency f DIV GHz Receiver gain 8 10 db Measured without antennas IF frequency range f IF MHz IF output impedance Z OUT 500 Differential outputs IQ amplitude imbalance tbd db IQ phase imbalance +/-10 deg Noise figure (DSB) 8.7 db Simulated (double side band at f IF = 1 MHz) Input compression point 1dB ICP -20 dbm Measured without antennas 1) Measured single-ended. Divider output are loaded with 50, external decoupling capacitors are required. No 50- match is required in application. 8

9 5 Packaging 5.1 Outline Dimensions Figure 3 Outline dimensions of QFN32 package with exposed pad 5.2 Package Code Top-Side Markings TRA002 YYWW 5.3 Antenna position Figure 4 Antenna position (top view) 9

10 6 Application 6.1 Application Circuit Figure 5 TRA_120_002 Application Circuit 6.2 Evaluation Boards Silicon Radar GmbH has an experimental showcase system, SiRad Easy Evaluation Kit. It is designed as an evaluation board for Silicon Radar s different integrated IQ transceivers with antennas in package and on board. The evaluation kit is to demonstrate millimeter-wave sensors to measure the distance and velocity using RADAR principles. Both - frequency modulated continuous wave (FMCW) or continuous wave (CW) - principles are applied. For more information about the features of SiRad Easy see: 10

11 6.3 Input / Output Stages The following figures show the simplified circuits of the input and output stages. It is important that the voltage applied to the Vt0 Vt3, DIVen and RXen pins should never exceed VCC by more than 0.3V. Otherwise, the supply current may be sourced through the upper ESD protection diode connected at the pin. Figure 6 Equivalent I/O circuits 11

12 7 Measurement Results 7.1 DC Current Consumption Measurements Figure 7 Power consumption vs. temperature (preliminary) 7.2 Conversion Gain Measurements Figure 8 Conversion gain of the receiver (preliminary) 12

13 7.3 Transmitter Frequency Measurements Figure 9 VCO tuning curves (preliminary) Figure 10 Full bandwidth VCO tuning (preliminary) 13

14 Figure 11 VCO pushing (preliminary) Figure 12 VCO pushing - Full bandwidth operation (preliminary) 14

15 Figure 13 Phase noise of the integrated oscillator at divider output (1.89GHz) (preliminary) Figure 14 Output frequency vs. temperature (preliminary) 15

16 7.4 Transmitter Power Measurements Figure 15 Output power vs. temperature (preliminary) 16

17 8 Disclaimer Silicon Radar GmbH The information contained herein is subject to change at any time without notice. Silicon Radar GmbH assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a Silicon Radar GmbH product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by Silicon Radar GmbH under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. Disclaimer: Silicon Radar GmbH makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any Silicon Radar product and any product documentation. products sold by Silicon Radar are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SILICON RADAR GMBH'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. Silicon Radar GmbH owns all rights, title and interest to the intellectual property related to Silicon Radar GmbH's products, including any software, firmware, copyright, patent, or trademark. The sale of Silicon Radar GmbH products does not convey or imply any license under patent or other rights. Silicon Radar GmbH retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by Silicon Radar GmbH. Unless otherwise agreed to in writing by Silicon Radar GmbH, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. 17