DESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATION. LT1004 Micropower Voltage Reference
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- Albert O’Brien’
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1 LT Micropower Voltage eference FEATES Guaranteed ±mv Initial Accuracy LT-. Guaranteed ±mv Accuracy LT-.5 Guaranteed µa Operating Current Guaranteed Temperature Performance Operates up to ma Very Low Dynamic Impedance APPLICATIONS Portable Meter eferences Portable Test Instruments Battery-Operated Systems Current Loop Instrumentation DESCIPTION The LT Micropower Voltage eference is a -terminal bandgap reference diode designed to provide high accuracy and excellent temperature characteristics at very low operating currents. Optimization of the key parameters in the design, processing and testing of the device results in accuracy specifications previously attainable only with selected units. Below is a distribution plot of reference voltage for a typical lot of LT-.. Virtually all of the units fall well within the prescribed limits of ±mv. The LT is a pin-for-pin replacement for the LM5/LM5 series of references with improved accuracy specifications. More important, the LT is an attractive device for use in systems where accuracy was previously obtained at the expense of power consumption and trimming. For a low drift micropower reference with guaranteed temperature coefficient, see the LT data sheet., LTC and LT are registered trademarks of Linear Technology Corporation. TYPICAL APPLICATION Micropower Cold Junction Compensation for Thermocouples Typical Distribution of eference Voltage (LT-.) k * PATS T A = 5 C V LITHIM LT-. THEMOCOPLE TYPE J K T S k 99k k.m Ω Ω.k 5k AT 5 C * QIESCENT CENT 5µA YELLOW SPINGS INST. CO. PAT # COMPENSATES WITHIN ± C FOM C TO C TA NMBE OF PATS TA
2 LT ABSOLTE MAXIMM ATINGS (Note ) W W W everse Breakdown Current... ma Forward Current... ma Operating Temperature ange LTM C to 5 C LTI... C to 5 C LTC... C to C Storage Temperature ange... 5 C to 5 C Lead Temperature (Soldering, sec.)... C PACKAGE/ODE INFOMATION BOTTOM VIEW H PACKAGE -LEAD TO- METAL CAN BOTTOM VIEW Z PACKAGE -LEAD PLASTIC TO-9 T JMAX = 5 C θ JA = C/ W θ JC = C/ W T JMAX = C θ JA = C/ W W ODE PAT NMBE LTMH-. LTMH-.5 LTCH-. LTCH-.5 LTCZ-. LTCZ-.5 LTIZ-. LTIZ-.5 NC NC NC GND TOP VIEW S PACKAGE -LEAD PLASTIC SO T JMAX = C, θ JA = 5 C/ W V OT NC V OT 5 NC (DO NOT SE) LTCS-. LTCS-.5 LTIS-. LTIS-.5 S PAT MAKING I 5 5I ELECTICAL CHAACTEISTICS (Note ) LT-. LT-.5 SYMBOL PAAMETE CONDITIONS MIN TYP MAX MIN TYP MAX NITS V Z everse Breakdown Voltage I = µa V LTM: 55 C T A 5 C V LTC: C T A C V LTI: C T A 5 C V V Z Average Temperature Coefficient I MIN I ma (Note ) 5 5 ppm/ C Temp I MIN Minimum Operating Current µa V Z everse Breakdown Voltage I MIN I ma.. mv I Change with Current.5.5 mv ma I ma mv mv r Z everse Dynamic Impedance I = µa.... Ω.5.5 Ω e n Wide Band Noise (MS) I = µa Hz f khz µv V Z Long Term Stability I = µa Time T A = 5 C ±. C ppm/khr The denotes the specifications which apply over the full operating temperature range. Note : Absolute Maximum atings are those values beyond which the life of a device may be impaired. Note : All specifications are for T A = 5 C unless otherwise noted. Note : Selected devices with guaranteed maximum temperature coefficient are available upon request. For MIL-STD components, please refer to LTC C data sheet for test listing and parameters.
3 LT TYPICAL PEFOMANCE CHAACTEISTICS W (.V) everse Characteristics 55 C TO 5 C everse Voltage Change 55 C TO 5 C Forward Characteristics. T A = 5 C EVESE CENT (µa) OTPT VOLTAGE CHANGE (mv) FOWAD VOLTAGE (V) EVESE VOLTAGE (V).. EVESE CENT (ma).. FOWAD CENT (ma) G G G EVESE VOLTAGE (V) Temperature Drift DYNAMIC IMPEDANCE (Ω) everse Dynamic Impedance 55 C TO 5 C f = 5Hz DYNAMIC IMPEDANCE (Ω) k k everse Dynamic Impedance T A = 5 C I = µa TEMPEATE ( C)... EVESE CENT (ma). k k k M FEQENCY (Hz) G G5 G NOISE (nv/ Hz) 5 Noise Voltage I = µa T A = 5 C NOISE (nv/ Hz) Filtered Output Noise I = µa C LOW PASS µa 5 C VOLTAGE (V) eponse Time.5 OTPT. k.5 V OT k k k FEQENCY (Hz) k k k FEQENCY (Hz) INPT 5 TIME (µs) G G G9
4 LT TYPICAL PEFOMANCE CHAACTEISTICS W (.) everse Characteristics 55 C TO 5 C Forward Characteristics. T A = 5 C EVESE CENT (µa) FOWAD VOLTAGE (V) EVESE VOLTAGE (V).5... FOWAD CENT (ma) G G EFEENCE VOLTAGE (V) Temperature Drift TEMPEATE ( C) G DYNAMIC IMPEDANCE (Ω) everse Dynamic Impedance f = 5Hz 55 C TO 5 C... EVESE CENT (ma) G DYNAMIC IMPEDANCE (Ω) k k. everse Dynamic Impedance T A = 5 C I = µa k k k M FEQENCY (Hz) G NOISE (nv/ Hz) Noise Voltage I = µa k k k FEQENCY (Hz) INTEGATED NOISE (µv) Filtered Output Noise I = µa µa C LOW PASS C k k k CTOFF FEQENCY (Hz) VOLTAGE (V) eponse Time OTPT k VOT INPT TIME (µs) 5 G5 G G
5 LT TYPICAL APPLICATIONS High Stability egulator Variable Output Supply LTA LTA V µf IN OT ADJ LT-.5 Ω % µf ADJ V OT Ω µf V OT LT-. Ω % TA V V.5 V k TA Constant Gain Amplifier Over Temperature Micropower eference 5k 5k V LM 9V to INPT N9 OTPT LT-. 5.k LM5 M 5pF.M % V OT k LT-. k V TA M % TA Lead Acid Low Battery Detector Ground eferenced Current Source % k % M LT -. SETS TIP POINT,.k PE CELL FO.V/CELL LM5 M V BATTEY OTPT LO = BATTEY LOW TA I OT k* LTC I OT =.5 V I OT µa LT-. TA * MAY BE INCEASED FO SMALL OTPT CENTS 5
6 LT TYPICAL APPLICATIONS SCHE ATIC DIAGA W VPP Generator for Eproms No Trim equired.v eference from. Battery V k k LT-. k TTL INPT 5k N9.5µF pf LMA V µs C PE INTEL SPEC.9k*.5k* OT V.* k LT-. * OTPT EGLATES DOWN TO. FO I OT =. TA * % METAL FILM ESISTOS TA5 Micropower eference from 9V Battery. eference Low Noise eference 9V 5k 5k µa.. Ω OTPT LT-. LT-.5 LT-. 5µF TA TA TA9 SW LT-. LT-.5.5k Q.5k Q Q Q Q Q Q Q pf pf k Q Q k 5k k Q Q pf pf k Q Q k 5k k 5k Q5 Q9 Q Q5 Q9 Q Q Q Q Q 5k 5k 5Ω k -. SD 5k 5Ω k -.5 SD
7 PACKAGE DESCIPTION Dimensions in inches (millimeters) unless otherwise noted. LT H Package -Lead and -Lead TO- Metal Can (LTC DWG # 5--) Z Package -Lead Plastic TO-9 (Similar to TO-) (LTC DWG # 5--) EFEENCE PLANE.9.9 ( )..95 (.5.95).5 (.) MIN..9** (..) DIA.5.5 (.59.) *.5 (.5) MAX. ±.5 (.5±.) DIA. ±.5 (.5 ±.). ±.5 (.5 ±.).9 (.) NOM NOM. ±. (.5 ±.5). ±. (.55 ±.) Z (TO-9) 95.5 (.) TYP. (.5) TYP PIN.5 (.) TYP FO -LEAD PACKAGE ONLY.5 (.) MIN.5 NCONTOLLED (.)LEAD DIMENSION MAX 5 NOM.. (.9.) 5.. (..9) H/(TO-) 9 * LEAD DIAMETE IS NCONTOLLED BETWEEN THE EFEENCE PLANE AND.5" BELOW THE EFEENCE PLANE.. ** FO SOLDE DIP LEAD FINISH, LEAD DIAMETE IS (..).5 ±.5 (. ±.). ±. (. ±.).5 ±. (. ±.5) S Package -Lead Plastic Small Outline (Narrow.5) (LTC DWG # 5--).9.9* (. 5.).. (..5).. (.5.5) 5 TYP.5.9 (..5).. (..5) *DIMENSION DOES NOT INCLDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED." (.5mm) PE SIDE ** DIMENSION DOES NOT INCLDE INTELEAD FLASH. INTELEAD FLASH SHALL NOT EXCEED." (.5mm) PE SIDE..9 (.55.).5 (.) TYP.. (5.9.9).5.5** (..9) SO 99 Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
8 LT TYPICAL APPLICATIONS C to C Linear Output Thermometer NETWOK DETAIL YSI.k 5% LT-. k.% T NETWOK YSI / LT k.% 5Ω.% GN / LT k.% 5Ω.k BN ED V OT V TOV C TO C TA5.Ω.% Low Temperature Coefficient -Terminal Current Source LM.k 5k LT-. I OT.V TA ELATED PATS PAT NMBE DESCIPTION COMMENTS LT Micropower Precision Shunt eference µa Operating Current, ppm/ C Maximum Drift,.5% Initial Accuracy LTS-.5 Micropower Series eference in SOT- µa Operating Current, ppm/ C Maximum Drift,.% Initial Accuracy Linear Technology Corporation McCarthy Blvd., Milpitas, CA 955- ()-9 FAX: () -5 fa LT/TP 9 EV A K PINTED IN SA LINEA TECHNOLOGY COPOATION 95
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