FEATURES DESCRIPTIO APPLICATIO S. LT1101 Precision, Micropower, Single Supply Instrumentation Amplifier (Fixed Gain = 10 or 100) TYPICAL APPLICATIO

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1 FEATUES Gain Error:.% Max Gain Nonlinearity:.% (ppm) Max Gain Drift: ppm/ C Max Supply Current: µa Max Offset Voltage: µv Max Offset Voltage Drift:.µV/ C Typ Offset Current: pa Max CM, G = : db Min.Hz to Hz Noise:.9µVp-p Typ.pAp-p Typ Gain Bandwidth Product: khz Min Single or Dual Supply Operation Surface Mount Package Available APPLICATIO S U Differential Signal Amplification in Presence of Common Mode Voltage Micropower Bridge Transducer Amplifier Thermocouples Strain Gauges Thermistors Differential Voltage-to-Current Converter Transformer Coupled Amplifier ma to ma Bridge Transmitter, LTC and LT are registered trademarks of Linear Technology Corporation. LT Precision, Micropower, Single Supply Instrumentation Amplifier (Fixed Gain = or ) DESCIPTIO U The LT establishes the following milestones: () It is the first micropower instrumentation amplifier, () It is the first single supply instrumentation amplifier, () It is the first instrumentation amplifier to feature fixed gains of and/or in low cost, space-saving -lead packages. The LT is completely self-contained: no external gain setting resistor is required. The LT combines its micropower operation (µa supply current) with a gain error of.%, gain linearity of ppm, gain drift of ppm/ C. The output is guaranteed to drive a k load to ±V with excellent gain accuracy. Other precision specifications are also outstanding: µv input offset voltage, pa input offset current, and low drift (.µv/ C and.pa/ C). In addition, unlike other instrumentation amplifiers, there is no output offset voltage contribution to total error. A full set of specifications are provided with ±V dual supplies and for single V supply operation. The LT can be operated from a single lithium cell or two Ni-Cad batteries. Battery voltage can drop as low as.v, yet the LT still maintains its gain accuracy. In single supply applications, both input and output voltages swing to within a few millivolts of ground. The output sinks current while swinging to ground no external, power consuming pull down resistors are needed. TYPICAL APPLICATIO U Gain Error Distribution GOUND (EF) SHOT TO, G = N.C. G = INVETING INPUT V 9 9 A 9.k 9 GOUND PIN, PUT AT PIN G = : NO ADDITIONAL CONNECTIONS G = : SHOT PIN TO PIN, SHOT PIN TO PIN B 9 PUT SHOT TO G = N.C. G = NONINVETING INPUT V LT TA PECENT OF UNITS. G = L = k T A = C 9 UNITS TESTED IN ALL PACKAGES GAIN EO (%) LT TA fa

2 LT ABSOLUTE AXI U ATI GS W W W Supply Voltage... ±V Differential Input Voltage... ±V Input Voltage... Equal to Positive Supply Voltage...V Below Negative Supply Voltage Output Short Circuit Duration... Indefinite U U W PACKAGE/ODE I FO ATIO GOUND (EF) EF G = IN 9 9 TOP VIEW PUT 9 V (CASE) G = 9 H PACKAGE -LEAD TO- METAL CAN V IN T JMAX = C, θ JA = C/W, θ JC = C/W U GOUND (EF) EF G = IN V (Note ) 9 9 TOP VIEW 9.k Operating Temperature ange LTAM/LTM (OBSOLETE)... C to C LTAI/LTI... C to C LTAC/LTC... C to C Storage Temperature ange... C to C Lead Temperature (Soldering, sec)... C 9 9 N PACKAGE -LEAD PDIP T JMAX = C, θ JA = C/W J PACKAGE -LEAD CEDIP T JMAX = C, θ JA = C/W PUT G = IN V NC GND (EF) NC EF G = IN NC V NC 9 9 TOP VIEW 9.k 9 9 SW PACKAGE -LEAD PLASTIC SO T JMAX = C, θ JA = C/W NC PUT NC G = IN NC V 9 NC ODE PAT NUMBE ODE PAT NUMBE ODE PAT NUMBE LTAMH LTMH LTACH LTCH OBSOLETE PACKAGES Consider the N as an Alternate Source LTAMJ LTMJ LTACJ LTCJ Consult LTC Marketing for parts specified with wider operating temperature ranges. LTAIN LTIN LTACN LTCN LTSW LTISW ELECTICAL CHAACTEISTICS otherwise noted. (Note ) LTOAM/AI/AC LTM/I/C SYMBOL PAAMETE CONDITIONS MIN TYP MAX MIN TYP MAX UNITS G E Gain Error G =, V =.V to.v, L = k.... % G =, V =.V to.v, L = k 9... % G NL Gain Nonlinearity G =, L = k ppm G =, L = k (Note ) ppm V OS Input Offset Voltage µv LTSW µv l OS Input Offset Current....9 na I B Input Bias Current na I S Supply Current µa V S = V, V, V CM =.V, V EF(PIN ) =.V, G = or, T A = C, unless fa

3 LT ELECTICAL CHAACTEISTICS otherwise noted. (Note ) V S = V, V, V CM =.V, V EF(PIN ) =.V, G = or, T A = C, unless LTOAM/AI/AC LTM/I/C SYMBOL PAAMETE CONDITIONS MIN TYP MAX MIN TYP MAX UNITS CM Common Mode k Source Imbalance ejection atio G =, V CM =.V to.v 9 9 db G =, V CM =.V to.v 99 db Minimum Supply Voltage (Note ).... V V O Maximum utput Output High, k to GND.... V Voltage Swing Output High, k to GND V Output Low, V EF =, No Load.. mv Output Low, V EF =, k to GND.. mv Output Low, V EF =, l SINK = µa 9 9 mv BW Bandwidth G = (Note ).... khz G = (Note ) khz S Slew ate (Note ).... V/µs V S = ±V, V CM = V, T A = C, Gain = or, unless otherwise noted. LTAM/AI/AC LTM/I/C SYMBOL PAAMETE CONDITIONS MIN TYP MAX MIN TYP MAX UNITS G E Gain Error G =, V O = ±V, L = k...9. % G =, V O = ±V, L = k.... % G =, V O = ±V, L = k or k...9. % G NL Gain Nonlinearity G =, L = k ppm G =, L = k ppm G =, L = k or k 9 ppm V OS Input Offset Voltage µv LTSW µv l OS Input Offset Current....9 na I B Input Bias Current na Input esistance Common Mode (Note ) GΩ Differential Mode (Note ) GΩ e n Input Noise Voltage.Hz to Hz (Note ).9..9 µvp-p Input Noise Voltage f O = Hz (Note ) nv/ Hz Density f O = Hz (Note ) nv/ Hz i n Input Noise Current.Hz to Hz (Note )... pap-p Input Noise Current f O =Hz (Note )... pa/ Hz Density f O = Hz.. pa/ Hz lnput Voltage ange G =.... V.... V G =.... V.... V CM Common Mode k Source Imbalance ejection atio G =, Over CM ange 9 db G =, Over CM ange 99 db PS Power Supply V S =.V,.V to ±V db ejection atio I S Supply Current 9 9 µa fa

4 LT ELECTICAL CHAACTEISTICS V S = ±V, V CM = V, T A = C, Gain = or, unless otherwise noted. LTAM/AI LTM/I SYMBOL PAAMETE CONDITIONS MIN TYP MAX MIN TYP MAX UNITS V O Maximum utput L = k.... V Voltage Swing L = k.... V BW Bandwidth G = (Note ).... khz G = (Note ) khz S Slew ate.... V/µs ELECTICAL CHAACTEISTICS VS = ±V, V CM = V, Gain = or, C T A C for AM/M grades, C T A C for AI/I grades, unless otherwise noted. LTAM/AI LTM/I SYMBOL PAAMETE CONDITIONS MIN TYP MAX MIN TYP MAX UNITS G E Gain Error G =, V O = ±V, L = k.... % G =, V O = ±V, L = k.... % G =, V O = ±V, L = k or k.... % TCG E Gain Error Drift G =, L = k ppm/ C (Note ) G =, L = k ppm/ C G =, L = k or k ppm/ C G NL Gain Nonlinearity G =, L = k 9 ppm G =, L = k ppm G =, L = k ppm G =, L = k ppm V OS Input Offset Voltage 9 µv LTISW 9 µv V OS / T Input Offset Voltage Drift (Note ).... µv/ C LTISW.. mv/ C l OS Input Offset Current...9. na l OS / T Input Offset Current Drift (Note ).... pa/ C I B Input Bias Current na I B / T Input Bias Current Drift (Note ) pa/ C CM Common Mode G =, V CM =.V to V 9 9 db ejection atio G =, V CM = V to.v 99 9 db PS Power Supply V S =.,.V to ±V 9 9 db ejection atio I S Supply Current 9 µa V O Maximum utput L = k.... V Voltage Swing L = k.... V fa

5 ELECTICAL CHAACTEISTICS VS = ±V, V CM = V, Gain = or, C T A C, unless otherwise noted. LT LTAC LTC/S SYMBOL PAAMETE CONDITIONS MIN TYP MAX MIN TYP MAX UNITS G E Gain Error G =, V O = ±V, L = k.... % G =, V O = ±V, L = k.... % G =, V O = ±V, L = k or k.9... % TCG E Gain Error Drift G =, L = k ppm/ C (Note ) G =, L = k 9 ppm/ C G =, L = k or k ppm/ C G NL Gain Nonlinearity G =, L = k 9 ppm G =, L = k ppm G =, L = k or k ppm V OS Input Offset Voltage µv LTSW µv V OS / T Input Offset Voltage Drift (Note ).... µv/ C LTSW.. µv/ C l OS Input Offset Current.... na I OS / T Input Offset Current Drift (Note ).... pa/ C I B Input Bias Current 9 na I B / T Input Bias Current Drift (Note ) pa/ C CM Common Mode G =, V CM =.V to V 9 9 db ejection atio G =, V CM = V to.v 99 db PS Power Supply V S =.,.V to ±V 9 db ejection atio I S Supply Current 9 µa V O Maximum utput L = k ±. ±. ±. ±. V Voltage Swing L = k ±. ±. ±. ±. V fa

6 LT ELECTICAL CHAACTEISTICS V S = V, V, V CM =.V, V EF(PIN ) =.V, Gain = or, C T A C for AI/I grades, unless otherwise noted (Note ). LTAM/AI LTM/I SYMBOL PAAMETE CONDITIONS MIN TYP MAX MIN TYP MAX UNITS G E Gain Error G =, V =.V to.v, L = k.... % G =, V CM =., L = k.... % TCG E Gain Error Drift L = k (Note ) ppm/ C G NL Gain Nonlinearity G =, L = k ppm G =, L = k (Note ) ppm V OS Input Offset Voltage 9 µv LTISW 9 µv V OS / T Input Offset Voltage Drift (Note ).... µv/ C LTISW.. µv/ C l OS Input Offset Current...9. na V OS / T Input Offset Current Drift (Note ).... pa/ C I B Input Bias Current na I B / T Input Bias Current Drift (Note ) pa/ C CM Common Mode G =, V CM =.V to.v 9 db ejection atio G =, V CM =.V to.9v, V EF =.V 9 9 db I S Supply Current 9 µa V Maximum utput Output High, k to GND.... V Voltage Swing Output High, k to GND.... V Output Low, V EF =, No Load.. mv Output Low, V EF =, k to GND.... mv Output Low, V EF =, I SINK = µa mv fa

7 ELECTICAL CHAACTEISTICS C T A C, unless otherwise noted (Note ). V S = V, V, V CM =.V, V EF(PIN ) =.V, Gain = or, LT LTAC LTC/S SYMBOL PAAMETE CONDITIONS MIN TYP MAX MIN TYP MAX UNITS G E Gain Error G =, V O =.V to.v, L = k....9 % G =, V CM =.V, L = k.... % TCG E Gain Error Drift L = k (Note ) ppm/ C G NL Gain Nonlinearity G =, L = k ppm G =, L = k (Note ) ppm V OS Input Offset Voltage µv LTSW µv V OS / T Input Offset Voltage Drift (Note ).... µv/ C LTSW.. µv/ C l OS Input Offset Current.... na I OS / T Input Offset Current Drift (Note )... pa/ C I B Input Bias Current 9 na I B / T Input Bias Current Drift (Note ) pa/ C CM Common Mode G =, V CM =.V to.v 9 9 db ejection atio G =, V CM =.V to V, V EF =.V 99 9 db I S Supply Current µa V O Maximum utput Output High, k to GND.... V Voltage Swing Output High, k to GND.... V Output Low, V EF =, No Load mv Output Low, V EF =, k to GND.... mv Output Low, V EF =, I SINK = µa mv Note : Absolute Maximum atings are those values beyond which the life of a device may be impaired. Note : This parameter is not tested. It is guaranteed by design and by inference from other tests. Note : This parameter is tested on a sample basis only. Note : These test conditions are equivalent to V S =.9V,.V, V CM = V, V EF(PIN) = V. Note : Minimum supply voltage is guaranteed by the power supply rejection test. The LT actually works at.v supply with minimal degradation in performance. fa

8 LT TYPICAL PEFO A CE CHAACTEISTICS UW PECENT OF UNITS Gain = Nonlinearity Distribution V S = ± V T A = C L kω UNITS TESTED IN ALL PACKAGES PECENT OF UNITS Gain = Nonlinearity Distribution V S = ± V T A = C L kω UNITS TESTED IN ALL PACKAGES GAIN EO (%) Gain vs Frequency G =... G =.. V S = ± V T A = C GAIN (db) GAIN NONLINEAITY (PPM) LT TPC GAIN NONLINEAITY (PPM) LT TPC. k k k M FEQUENCY (Hz) LT TPC GAIN EO (%)..... Gain Error Over Temperature G =, V S = ± V, L = k G =, V S = ± V, L = k G =, V S = ± V, L = k G =, V S = V, V, L = k G =, V S = ± V, L = k G =, V S = ± V, L = k G =, V S = ± V or V, V, L = k VOLTAGE GAIN NONLINEAITY (PPM) Gain Nonlinearity Temperature SEE GAIN VS T FO DEFINITIONS PECENT OF UNITS Input Offset Voltage Distribution T A = C UNITS MEASUED IN ALL PACKAGES EACH UNIT MEASUED AT V S = V, V AND AT V S = ±V TEMPEATUE ( C) TEMPEATUE ( C) INPUT OFFSET VOLTAGE (µv) LT TPC LT TPC LT TPC SUPPLY CUENT (µa) 9 Supply Current vs Temperature V S = ±V V S = V, V TEMPEATUE ( C) LT TPC OFFSET CUENT (pa) BIAS CUENT (na) Input Bias and Offset Currents vs Temperature V S = V, V TO ±V I OS I B TEMPEATUE ( C) LT TPC INPUT BIAS CUENT (na) Input Bias Current vs Common Mode Voltage V S = V, V T A = C T A = C T A = C COMMON MODE VOLTAGE (V) LT TPC9 fa

9 LT TYPICAL PEFO A CE CHAACTEISTICS UW COMMON MODE EJECTION ATIO (db) Common Mode ejection atio vs Frequency. G = V S = ± V T A = C G = C = pf PIN TO PIN G = k k k FEQUENCY (Hz) LT TPC COMMON MODE ANGE (V) V V V V V V V Common Mode ange vs Supply Voltage G = ALL TEMPEATUES C C G = C G = G = C C C ± ± ± ± ± ± ± ± ± SUPPLY VOLTAGE (V) LT TPC POWE SUPPLY EJECTION ATIO (db) Power Supply ejection atio vs Frequency NEGATIVE SUPPLY T A = C POSITIVE SUPPLY k k k FEQUENCY (Hz) LT TPC SATUATION VOLTAGE (mv) OVESHOOT (%) Output Saturation vs Temperature vs Sink Current V S = V, V. V S = ±.V TO ± V T A = C I SINK = ma I SINK = ma I SINK = µa I SINK = µa I SINK = µa NO LOAD L = k TO GOUND TEMPEATUE ( C) Capacitive Load Handling G = G = LT TPC CAPACITIVE LOAD (nf) LT TPC PUT VOLTAGE SWING (V) PEAK-TO-PEAK PUT SWING, V S = ± V (V) V V V V V Output Voltage Swing vs Load Current C C C C C V C.. SOUCING O SINKING LOAD CUENT (ma) Undistorted Output Swing vs Frequency V S = V, V, L k V S = ±V L k LT TPC T A = C LOAD, L, TO GOUND V S = V, V, L k V S = ±V L k k k FEQUENCY (Hz) PEAK-TO-PEAK PUT SWING, V S = V, V (V) SHOT-CICUIT CUENT (ma) SINKING SOUCING PUT IMPEDANCE (Ω) Short-Circuit Current vs Time TIME FOM PUT SHOT TO GOUND (MINUTES) k. T A = C, V S = V, V T A = C, V S = ± V T A = C, V S = V, V T A = C, V S = ± V T A = C, V S = ± V T A = C, V S = ± V Output Impedance vs Frequency G = G = k k k FEQUENCY (Hz) LT TPC LT TPC LT TPC fa 9

LT TYPICAL PEFO A CE CHAACTEISTICS UW Noise Spectrum Warm-Up Drift

(nv/ Hz) VOLTAGE NOISE DENSITY (fa/ Hz). CUENT NOISE /f CONE.

V TO ± V T A = C VOLTAGE NOISE FEQUENCY (Hz) CHANGE IN OFFSET VOLTAGE

LOW TIME AFTE POWE ON (MINUTES) V/DIV µs/div PUT FOM V TO.

LT TPC9 LT TPC Large Signal Transient esponse G =, V S = V Large

G =, V S = V, V V/DIV V/DIV V/DIV µs/div NO LOAD LT TPC.

Small Signal Transient esponse G =, V S = V, V Small Signal Transient

10 LT TYPICAL PEFO A CE CHAACTEISTICS UW Noise Spectrum Warm-Up Drift Large Signal Transient esponse G =, V S = V, V VOLTAGE NOISE DENSITY (nv/ Hz) VOLTAGE NOISE DENSITY (fa/ Hz). CUENT NOISE /f CONE.Hz V S = ±.V TO ± V T A = C VOLTAGE NOISE FEQUENCY (Hz) CHANGE IN OFFSET VOLTAGE (µv).... V S = ± V T A = C WAM UP DIFT AT V S = V, V IS IMMEASUABLY LOW TIME AFTE POWE ON (MINUTES) V/DIV µs/div PUT FOM V TO.V, NO LOAD LT TPC. LT TPC9 LT TPC Large Signal Transient esponse G =, V S = V Large Signal Transient esponse G =, V S = ±V Large Signal Transient esponse G =, V S = V, V V/DIV V/DIV V/DIV µs/div NO LOAD LT TPC. µs/div NO LOAD LT TPC. µs/div PUT FOM V TO.V, NO LOAD LT TPC. Small Signal Transient esponse G =, V S = V, V Small Signal Transient esponse G =, V S = ±V Small Signal Transient esponse G =, V S = V, V mv/div mv/div V/DIV µs/div PUT FOM.V TO.V, NO LOAD LT TPC. µs/div LT TPC. µs/div PUT FOM.V TO.V, NO LOAD (ESPONSE WITH V S = ±V, G = IS IDENTICAL) LT TPC. fa

11 LT TYPICAL PEFO A CE CHAACTEISTICS UW Single Supply: Minimum Common Mode Voltage vs Output Voltage Single Supply: Minimum Output Voltage vs Common Mode Voltage Minimum Supply Voltage vs Temperature MINIMUM COMMON MODE VOLTAGE (V) C G = C C C C C G = V =.V TO V V = OV PUT VOLTAGE (V) COMMON MODE VOLTAGE (V) 9 V =.V TO V V = OV NO LOAD G = C C C C G = 9 MINIMUM PUT VOLTAGE (mv) C C MINIMUM SUPPLY, PUT SWING, COMMON MODE ANGE (V)..... COMMON-MODE ANGE AT MINIMUM SUPPLY V = V MINIMUM PUT SWING SUPPLY VOLTAGE AT MINIMUM SUPPLY TEMPEATUE ( C) LT TPC LT TPC LT TPC APPLICATIO S I FO ATIO Single Supply Applications U W U U The LT is the first instrumentation amplifier which is fully specified for single supply operation, (i.e. when the negative supply is V). Both the input common mode range and the output swing are within a few millivolts of ground. Probably the most common application for instrumentation amplifiers is amplifying a differential signal from a transducer or sensor resistance bridge. All competitive instrumentation amplifiers have a minimum required common mode voltage which is V to V above the negative supply. This means that the voltage across the bridge has to be V to V or dual supplies have to be used (i.e., micropower) single battery usage is not attainable on competitive devices. The minimum output voltage obtainable on the LT is a function of the input common mode voltage. When the common mode voltage is high and the output is low, current will flow from the output of amplifier A into the output of amplifier B. See the Minimum Output Voltage vs Common Mode Voltage plot. Similarly, the Single Supply Minimum Common Mode Voltage vs Output Voltage plot specifies the expected common mode range. When the output is high and input common mode is low, the output of amplifier A has to sink current coming from the output of amplifier B. Since amplifier A is effectively in unity gain, its input is limited by its output. Common Mode ejection vs Frequency The common mode rejection ratio (CM) of the LT starts to roll off at a relatively low frequency. However, as shown on the Common Mode ejection atio vs Frequency plot, CM can be enhanced significantly by connecting an pf capacitor between pins and. This improvement is only available in the gain configuration, and it is in excess of db at Hz. Offset Nulling The LT is not equipped with dedicated offset null terminals. In many bridge transducer or sensor applications, calibrating the bridge simultaneously eliminates the instrumentation amplifier s offset as a source of error. For example, in the Micropower emote Temperature Sensor Application shown, one adjustment removes the offset errors due to the temperature sensor, voltage reference and the LT. fa

12 LT APPLICATIO S I FO ATIO U W U U A simple resistive offset adjust procedure is shown below. If = Ω for G =, and = Ω for G =, then the effect of on gain error is approximately.%. Unfortunately, about µa has to flow through to bias the reference terminal (Pin ) and to null out the worstcase offset voltage. The total current through the resistor network can exceed ma, and the micropower advantage of the LT is lost. V LT V LT AI Another offset adjust scheme uses the LT micropower op amp to drive the reference Pin. Gain error and common mode rejection are unaffected, the total current increase is µa. The offset of the LT is trimmed and amplified to match and cancel the offset voltage of the LT. Output offset null range is ±mv. LT k k k k POT k.v TO V LT k.k Gains Between and Gains between and can be achieved by connecting two equal resistors (= x ) between Pins and and Pins and. x Gain = x /9 The nominal value of is 9.kΩ. The usefulness of this method is limited by the fact that is not controlled to better than ±% absolute accuracy in production. However, on any specific unit, 9 can be measured between Pins and. Input Protection Instrumentation amplifiers are often used in harsh environments where overload conditions can occur. The LT employs PNP input transistors, consequently the differential input voltage can be ±V (with ±V supplies, ±V with ±V supplies) without an increase in input bias current. Competitive instrumentation amplifiers have NPN inputs which are protected by back-to-back diodes. When the differential input voltage exceeds ±.V on these competitive devices, input current increases to the milliampere level; more than ±V differential voltage can cause permanent damage. When the LT s inputs are pulled above the positive supply, the inputs will clamp a diode voltage above the positive supply. No damage will occur if the input current is limited to ma. Ω resistors in series with the inputs protect the LT when the inputs are pulled as much as V below the negative supply..v TO V LT AI fa

13 APPLICATIO S I FO ATIO U W U U LT Micropower, Battery Operated emote Temperature Sensor ma to ma Loop eceiver EMOTE TEMP SENSO V V 9k LM- k LT-. k Ω Ω LT-. na K k POT k k LT G = k mv/ C I LOOP.Ω k k ma TO ma IN OV TO V TIM PUT TO V AT ma IN LT LT AI PUT TIM PUT TO mv AT C TEMPEATUE ANGE =. C TO C ACCUACY = ±. C LT AI Instrumentation Amplifier with ±ma Output Current Voltage Controlled Current Source V = V LT k LT V IN.V 9V LT I V = V GAIN =, DEGADED BY.% DUE TO LT PUT = ±V INTO Ω (TO.kHz) DIVES ANY CAPACITIVE LOAD SINGLE SUPPLY APPLICATION (V = V, V = OV): V MIN = mv, V MAX =.V LT AI V I IN = I = ma TO ma VOLTAGE COMPLIANCE =.V ( Ω) L LT AI fa

14 LT APPLICATIO S I FO ATIO U W U U Differential Voltage Amplification from a esistance Bridge V TANSDUCE O SENSO ESISTANCE BIDGE LT G = SHIELD MINIMUM VOLTAGE ACOSS BIDGE = mv MINIMUM SUPPLY VOLTAGE =.V LT AI Gain =, or Instrumentation Amplifier Differential Output Single Ended Output IN LT LT LT IN LT GAIN =, AS SHOWN GAIN =, SHOT PIN TO PIN, PIN TO PIN ON BOTH DEVICES GAIN =, SHOT PIN TO PIN, PIN TO PIN ON ONE DEVICE, NOT ON THE OTHE INPUT EFEED NOISE IS EDUCED BY (G = O ) LT AI fa

15 LT PACKAGE DESCIPTIO U H Package -Lead TO- Metal Can (. Inch PCD) (eference LTC DWG # --) SEATING PLANE..* (..).. (.9 9.9) DIA.. (..9). (.) MAX. (.) MAX.. (.9.99)..** (..) GAUGE PLANE.. (. 9.) EFEENCE PLANE TYP.. (..).. (..) PIN. (.) TYP.. (.9.) INSULATING STANDOFF * LEAD DIAMETE IS UNCONTOLLED BETWEEN THE EFEENCE PLANE AND THE SEATING PLANE.. ** FO SOLDE DIP LEAD FINISH, LEAD DIAMETE IS (..) H(TO-). PCD J Package -Lead CEDIP (Narrow. Inch, Hermetic) (eference LTC DWG # --).. (..) FULL LEAD OPTION. BSC (. BSC) CONE LEADS OPTION ( PLCS).. (..) HALF LEAD OPTION. (.) MIN. (.) AD TYP. (.) MAX.. (..). (.) MAX.. (..).. (..) NOTE: LEAD DIMENSIONS APPLY TO SOLDE DIP/PLATE O TIN PLATE LEADS.. (..).. (..) OBSOLETE PACKAGES. (.) BSC.. MIN J Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. fa

16 LT PACKAGE DESCIPTIO U N Package -Lead PDIP (Narrow. Inch) (eference LTC DWG # --).. (..).. (..). ±. (. ±.).* (.) MAX.9. (.9.) ( ). (.) TYP. (.) BSC. (.) MIN. ±. (. ±.). (.) MIN N. ±.* (. ±.) NOTE: INCHES. DIMENSIONS AE MILLIMETES *THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH O POTUSIONS. MOLD FLASH O POTUSIONS SHALL NOT EXCEED. INCH (.mm) SW Package -Lead Plastic Small Outline (Wide. Inch) (eference LTC DWG # --). ±. TYP N. BSC. ±..9. (.9.9) NOTE 9 N. MIN. ±. NOTE.9.9 (..) N/ N/ ECOMMENDED SOLDE PAD LAY. (.) AD MIN.9.99 (.9.9) NOTE..9 (..) TYP.9. (..).. (.9.)..9. (.) (.9.) NOTE BSC..9.. (..) (..) TYP NOTE: INCHES. DIMENSIONS IN (MILLIMETES). DAWING NOT TO SCALE. PIN IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES AE THE MANUFACTUING OPTIONS. THE PAT MAY BE SUPPLIED WITH O WITH ANY OF THE OPTIONS. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH O POTUSIONS. MOLD FLASH O POTUSIONS SHALL NOT EXCEED." (.mm).. (..) S (WIDE) Linear Technology Corporation McCarthy Blvd., Milpitas, CA 9- () -9 FAX: () - fa LW/TP K EV A PINTED IN USA LINEA TECHNOLOGY COPOATION 99

FEATURES APPLICATIO S TYPICAL APPLICATIO. LT1102 High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100) DESCRIPTIO

FEATURES APPLICATIO S TYPICAL APPLICATIO. LT1102 High Speed, Precision, JFET Input Instrumentation Amplifier (Fixed Gain = 10 or 100) DESCRIPTIO FEATRES Slew Rate: V/μs Gain-Bandwidth Product: MHz Settling Time (.%): μs Overdrive Recovery:.μs Gain Error:.% Max Gain Drift: ppm/ C Gain Nonlinearity: ppm Max Offset Voltage (Input Output): μv Max Drift