LM2904 LOW POWER DUAL OPERATIONAL AMPLIFIERS. INTERNALLY FREQUENCY COMPENSATED LARGE DC VOLTAGE GAIN : 100dB

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1 LOW POWE DUAL OPEATIONAL AMPLIFIES INTENALLY FEQUENCY COMPENSATED LAGE DC VOLTAGE GAIN : 1dB WIDE BANDWIDTH (unity gain) : 11MHz (temperature compensated) VEY LOW SUPPLY CUENT/AMPLI (5µA) - ESSENTIALLY INDEPENDENT OF SUPPLY VOLTAGE LOW INPUT BIAS CUENT : 2nA (temperature compensated) LOW INPUT OFFSET CUENT : 2nA INPUT COMMON-MODE VOLTAGE ANGE INCLUDES GOUND DIFFEENTIAL INPUT VOLTAGE ANGE EQUAL TO THE POWE SUPPLY VOLTAGE LAGE OUTPUT VOLTAGE SWING V TO (VCC 15V) N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) ODE CODES DESCIPTION This circuit consists of two independent, high gain, internally frequency compensated which were designed specifically to operate from a single power supply overa wide range of voltagesthelow power supply drain is independent of the magnitude of the power supply voltage Application areas include transducer amplifiers, dc gain blocks and all the conventionalop-amp circuits which now can be more easilyimplemented in single power supply systems For example, these circuits canbe directly operatedoff the standard+ 5V power supply voltage which is used in logic systems and will easily provide the required interface electronics without requiring any additional power supply In the linear mode the input common-mode voltage range includes ground and the output voltage can also swing to ground, even though operated from only a single power supply voltage The gain-bandwidth product is temperature compensated Part Temperature Package Number ange N D 4 o C, +125 o C Example : D PIN CONNECTIONS (top views) Output Inverting input Non-inverting input 1 4-VCC Non-inverting input Inverting input Ouput 2 8-V CC TBL 294-1EPS October /11

2 SCHEMATIC DIAGAM ( ) V CC 6µA 4µA 1µA Q5 C C Q6 Inverting input Q1 Q2 Q3 Q4 Q7 SC Non-inverting input Q11 Output Q13 Q1 Q12 Q8 Q9 5µA GND 294-2EPS ABSOLUTE MAXIMUM ATINGS Symbol Parameter Value Unit V CC Supply Voltage +32 V Vi Input Voltage 3 to +32 V V id Differential Input Voltage +32 V Output Short-circuit Duration - (note 2) Infinite Ptot Power Dissipation 5 mw I in Input Current - (note 1) 5 ma T oper Operating Free-air Temperature ange 4 to +125 Tstg Storage Temperature ange 65 to +15 o C o C 294-2TBL 2/11

3 ELECTICAL CHAACTEISTICS V CC + = +5V, V CC = Ground, V O = 14V, (unless otherwise specified) Symbol Parameter Min Typ Max Unit V io Input Offset Voltage - (note 3) T min T amb T max Iio Input Offset Current Tamb =25 o C Tmin Tamb Tmax I ib Input Bias Current - (note 4) Tamb =25 o C Tmin Tamb Tmax A vd SV I CC Vicm CM IO Isink V OPP Large Signal Voltage Gain (V CC = +15V, L =2kΩ,V O = 14V to 114V) Tamb =25 o C Tmin Tamb Tmax Supply Voltage ejection atio (S = 1kΩ) (V CC + = 5 to 3V) Tmin Tamb Tmax Supply Current, all Amp, no Load V CC = +5V, T min T amb T max VCC = +3V, Tmin Tamb Tmax Input Common Mode Voltage ange (VCC = +3V) - (note 6) T min T amb T max Common-mode ejection atio (S = 1kΩ) T min T amb T max V CC + 15 V CC + 2 Output Short Circuit Current (VCC = +15V, Vo = 2V, Vid = +1V) Output Current Sink (Vid = -1V) V CC = +15V, V O =2V VCC = +15V, VO = +2V Output Voltage Swing ( L =2kΩ) T min T amb T max VOH High Level Output Voltage (VCC + = 3V) Tamb =25 o C L =2kΩ Tmin Tamb Tmax L = 1kΩ T min T amb T max V OL S GBP THD V CC + 15 V CC + 2 Low Level Output Voltage ( L = 1kΩ) 5 2 T min T amb T max 2 Slew ate (VCC = 15V, VI = 5 to 3V, L =2kΩ, CL= 1pF, Tamb =25 o C, unity gain) 3 6 Gain Bandwidth Product (V CC = 3V, f = 1kHz,, Vin = 1mV, L =2kΩ,CL= 1pF) 7 11 Total Harmonic Distortion (f = 1kHz, A v = 2dB, L =2kΩ,V CC = 3V, 2 C L = 1pF,, V O =2 PP ) mv na na V/mV db ma V db ma ma µa V V mv V/µs MHz % 294-3TBL 3/11

4 ELECTICAL CHAACTEISTICS (continued) Symbol Parameter Min Typ Max Unit DV io Input Offset Voltage Drift 7 3 µv/ o C DI io Input Offset Current Drift 1 3 pa/ o C V O1 /V O2 Channel Separation (note 5) 1kHz f 2kHz 12 db Notes : 1 This input current only exist when the voltage at any of the input leads is driven negative It is due to the collector-base junction of the input PNP transistor becoming forward biased and thereby acting as input diode clamps In addition to this diode action, there is also NPN parasitic action on the IC chip This transistor action can cause the output voltages of the Op-amps to go to the VCC voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative This is not destructive and normal output will set up again for input voltage higher than 3V 2 Short-circuits from the output to VCC can cause excessive heating if VCC + > 15V The maximum output current is approximatively 4mA independent of the magnitude of V CC Destructive dissipation can result from simultaneous short-circuits on all amplifiers 3 V O = 14V, S =Ω,5V<V + CC < 3V, < V ic < V + CC 15V 4 The direction of the input current is out of the IC This current is essentially constant, independent of the state of the output so no loading change exists on the input lines 5 Due to the proximity of external components insure that coupling is not originating via stray capacitance between these external parts This typically can be detected as this type of capacitance increases at higher frequences 6 The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 3V The upper end of the common-mode voltage range is V + CC 15V But either or both inputs can go to +32V without damage 294-3EPS 294-4TBL 4/11

5 294-4EPS 5/11

6 16 1 VOLTAGEGAIN(dB) L= 2k Ω =2kΩ L INPUTCUENT (na) T amb =+25 C VOLTAGEGAIN(dB) POSITIVESUPPLY VOLTAGE(V) 8 4 L=2k Ω =2kΩ L POSITIVE SUPPLY VOLTAGE (V) 294-5EPS 294-7EPS GAINBANDWIDTHPODUCT(MHz) POSITIVESUPPLY VOLTAGE (V) V CC = 15V TEMPEATUE ( C) 294-6EPS 294-8EPS POWESUPPLYEJECTION ATIO(dB) SV TEMPEATUE( C) 294-9EPS COMMONMODEEJECTION ATIO(dB) TEMPEATUE ( C) 294-1EPS 6/11

7 TYPICAL APPLICATIONS (single supply voltage) V CC =+5V DC AC COUPLED INVETING AMPLIFIE AC COUPLED NON-INVETING AMPLIFIE e I ~ C I 1kΩ VCC f 62kΩ B 3 A =- f V (as shown A V = -1) C o e o 2V PP 1kΩ L C1 1µF e I ~ C I 3 1MΩ 1MΩ 62kΩ B 4 A V=1+ (asshowna V =11) C o 2V PP e o 1kΩ L C1 1µF C2 1µF V CC EPS EPS NON-INVETING DC AMPLIFIE DC SUMMING AMPLIFIE e 1 1kΩ e O +5V A V =1+ (As shown = 11) A V e 2 e O 1kΩ 1MΩ e O (V) e 3 e I (mv) e EPS e o =e 1 +e 2 -e 3 -e 4 where (e 1 +e 2 ) (e 3 +e 4 ) to keep eo V EPS 7/11

8 HIGH INPUT Z, DC DIFFEENTIAL AMPLIFIE USING SYMMETICAL AMPLIFIES TO EDUCE INPUT CUENT I I e o 4 3 +V1 Vo +V2 if 1 = 5 and 3 = 4 = 6 = 7 e o =[ ] (e 2 e 1 ) As shown e o = 11 (e 2 -e 1 ) e I 15MΩ 2N929 3MΩ 1µF Input current compensation EPS EPS HIGH INPUT Z ADJUSTABLE GAIN DC INSTUMENTATION AMPLIFIE LOW DIFT PEAK DETECTO e 2 e 1 2kΩ Gain adjust e O e I Z I 1µF C 2 2 1MΩ 2N929 1µF 3 3MΩ Z o e o Input current compensation if =5 and 3 =4 =6= 7 e o = [ ] (e 2 e 1 ) As shown eo = 11 (e2 -e1) EPS EPS 8/11

9 ACTIVE BAND-PASS FILTE +V1 3 F o = 1kHz Q=5 A V = 1 (4dB) 4 1MΩ C2 33pF 6 47kΩ 8 C1 33pF C3 1µF 5 47kΩ 7 Vo V CC EPS 9/11

10 a1 I PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP O CEDIP e4 L b B B1 e E Z e3 Z D 8 5 F A b1 1 4 PM-DIP8EPS Dimensions Millimeters Inches Min Typ Max Min Typ Max A a B b b D E e e e F i 58 2 L Z DIP8TBL 1/11

11 F PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICOPACKAGE (SO) L C c1 a2 A a3 b e s a1 b1 e3 E D M PM-SO8EPS Dimensions Millimeters Inches Min Typ Max Min Typ Max A a a a b b C c1 45 o (typ) D E e e F L M 6 24 S 8 o (max) SO8TBL Information furnished is believed to be accurate and reliable However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics 1994 SGS-THOMSON Microelectronics - All ights eserved SGS-THOMSON Microelectronics GOUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA ODECODE : 11/11

LM2904 LOW POWER DUAL OPERATIONAL AMPLIFIERS. INTERNALLY FREQUENCY COMPENSATED LARGE DC VOLTAGE GAIN : 100dB

LM2904 LOW POWER DUAL OPERATIONAL AMPLIFIERS. INTERNALLY FREQUENCY COMPENSATED LARGE DC VOLTAGE GAIN : 100dB LOW POWE DUAL OPEATIONAL AMPLIFIES. INTENALLY FEQUENCY COMPENSATED LAGE DC VOLTAGE GAIN : 1dB. WIDE BANDWIDTH (unity gain) : 1.1MHz (temperature compensated) VEY LOW SUPPLY CUENT/OP (5µA). ESSENTIALLY