TL082 TL082A - TL082B

Transcription

1 TL82 TL82A TL82B GENERAL PURPOSE DUAL JFET OPERATIONAL AMPLIFIERS. LOW POWER CONSUMPTION WIDE COMMONMODE (UP TO VCC + ) AND DIFFERENTIAL VOLTAGE RANGE. LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORTCIRCUIT PROTECTION HIGH INPUT IMPEDANCE J FET INPUT STAGE INTERNAL FREQUENCY COMPENSATION. LATCH UP FREE OPERATION HIGH SLEW RATE : 6V/µs (typ) N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) DESCRIPTION The TL82, TL82A and TL82B are high speed J FET input dual operational amplifiers incorporating well matched, high voltage J FET and bipolar transistors in a monolithic integrated circuit. The devicesfeaturehigh slew rates, low input bias and offset current, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view) ORDER CODES Temperature Package Part Number Range N D TL82M/AM/BM o C, + o C TL82I/AI/BI o C, + o C TL82C/AC/BC o C, +7 o C Examples : TL82CD, TL82IN 82.TBL Output 2 Inverting input 3 Noninverting input Noninverting input 2 6 Inverting input 2 7 Output April 99 /9

2 TL82 TL82A TL82B SCHEMATIC DIAGRAM Noninverting input Inverting input Ω 2Ω Output 3k Ω /2 TL82 8.2k.3k 3k.3k 3k Ω 823.EPS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage (note ) ±8 V Vi Input Voltage (note 3) ± V Vid Differential Input Voltage (note 2) ±3 V Ptot Power Dissipation 68 mw Output Shortcircuit Duration (note ) Infinite Toper Operating Free Air Temperature Range TL82C,AC,BC TL82I,AI,BI TL82M,AM,BM Notes : to7 to to Tstg Storage Temperature Range 6 to. All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between VCC + and VCC. 2. Differential voltages are at the noninverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or volts, whichever is less.. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the dissipation rating is not exceeded. o C o C 822.TBL 2/9

3 TL82 TL82A TL82B ELECTRICAL CHARACTERISTICS VCC = ±V, Tamb =2 o C (unless otherwise specified) Symbol Parameter Vio Input Offset Voltage (RS = Ω) Tamb =2 o C Tmin. Tamb Tmax. TL82BC,BI,BM TL82BC,BI,BM TL82I,M,AC,AI, TL82C AM,BC,BI,BM Min. Typ. Max. Min. Typ. Max DVio Input Offset Voltage Drift µv/ o C I io Input Offset Current * T amb =2 o C Tmin. Tamb Tmax. Iib Input Bias Current * T amb =2 o C 2 2 T min. T amb T max. 2 A vd SVR ICC Large Signal Voltage Gain (R L =2kΩ,V O =±V) T amb =2 o C T min. T amb T max. 2 Supply Voltage Rejection Ratio (R S =Ω) T amb =2 o C 8 T min. T amb T max Supply Current, per Amp, no Load T amb =2 o C. 2. T min. T amb T max. 2. Vicm Input Common Mode Voltage Range ± + CMR Common Mode Rejection Ratio (RS = Ω) Tamb =2 o C Tmin. Tamb Tmax. Ios Output Shortcircuit Current T amb =2 o C Tmin. Tamb Tmax. ±V OPP Output Voltage Swing T amb =2 o C R L = 2kΩ R L = kω Tmin. Tamb Tmax. RL = 2kΩ RL = kω ± SR Slew Rate (V in = V, R L =2kΩ, C L = pf, V/µs T amb =2 o C, unity gain) t r Rise Time (V in = 2mV, R L =2kΩ,C L = pf, µs Tamb =2 o C, unity gain).. KOV Overshoot (Vin = 2mV, RL = 2kΩ, CL = pf, T amb =2 o C, unity gain) % GBP Gain Bandwidth Product (f = khz, MHz Tamb =2 o C, Vin = mv, RL =2kΩ,CL = pf) R i Input Resistance Ω THD Total Harmonic Distortion (f = khz, A V = 2dB, RL =2kΩ,CL= pf, Tamb =2 o C, VO =2VPP).. % en Equivalent Input Noise Voltage nv (f = khz, Rs = Ω) Hz m Phase Margin Degrees VO/VO2 Channel Separation (Av = ) db * The input bias currents are junction leakage currents which approximately double for every o C increase in the junction temperature. 3. Unit mv pa na pa na V/mV db ma V db ma V 823.TBL 3/9

4 TL82 TL82A TL82B VOLTAGE VERSUS FREQUENCY VOLTAGE VERSUS FREQUENCY MAXIMUM PEAKTOPEAKOUTPUT = V = V = V R L = 2kΩ T amb =+2 C SeeFigure2 K K K M M MAXIMUM PEAKTOPEAKOUTPUT = = = V V V R L = kω T am b =+2 C Se e Figure 2 K K K M M 82.EPS 82.EPS VOLTAGE VERSUS FREQUENCY VOLTAGE VERSUS FREE AIR TEMP. 3 T amb = +2 C V = V CC 2 R L =2kΩ 2 See Figure 2 T amb = C T amb = + C k k k k M M M 826.EPS MAXIMUM PEAKTOPEAKOUTPUT = V See Figure R L = kω R L =2kΩ 827.EPS VOLTAGE VERSUS LOAD RESISTANCE VOLTAGE VERSUS SUPPLY VOLTAGE = V T amb =+2 C See Figure LOAD RESISTANCE (k Ω) 828.EPS MAXIMUM PEAKTOPEAKOUTPUT R L =kω T amb = +2 C SUPPLY VOLTAGE ( V) 829.EPS /9

5 TL82 TL82A TL82B INPUT BIAS CURRENT VERSUS FREE AIR TEMPERATURE LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION VERSUS FREE AIR TEMPERATURE INPUT BIAS CURRENT(nA) = V TEMPERATURE( C) 82.EPS DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) 2 2 = V V O = V 2 R =2kΩ L EPS LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT VERSUS FREQUENCY TOTAL POWER DISSIPATION VERSUS FREE AIR TEMPERATURE DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) PHASE SHIFT (right scale) = V to V R L =2kΩ T amb = +2 C DIFFERENTIAL VOLTAGE AMPLIFICATION (left scale) 8 k k k M M EPS TOTAL POWER DISSIPATION (mw) 2 22 = V 2 7 No signal No load EPS SUPPLY CURRENT PER AMPLIFIER VERSUS FREE AIR TEMPERATURE SUPPLY CURRENT PER AMPLIFIER VERSUS SUPPLY VOLTAGE SUPPLY CURRENT (ma) 2..8 = V.6. No signal No load EPS SUPPLY CURRENT (ma) T amb = +2 C No signal No load SUPPLY VOLTAGE ( V) 82.EPS /9

6 TL82 TL82A TL82B COMMON MODE REJECTION RATIO VERSUS FREE AIR TEMPERATURE VOLTAGE FOLLOWER LARGE SIGNAL PULSE RESPONSE COMMON MODE MODE REJECTION RATIO (db) R L =kω = V EPS INPUT AND OUTPUT VOLTAGES (V) OUTPUT INPUT = V R L =2kΩ C L =pf T amb =+2 C TIME (µs) 827.EPS OUTPUT VOLTAGE VERSUS ELAPSED TIME EQUIVALENT INPUT NOISE VOLTAGE VERSUS FREQUENCY OUTPUT VOLTAGE (mv) OVERSHOOT % 9% t r = V R L =2kΩ T amb = +2 C TIME (µs) 828.EPS EQUIVALENT INPUT NOISE VOLTAGE (nv/vhz) = V A V = R S = Ω T amb = +2 C k k k k k 829.EPS TOTAL HARMONIC DISTORTION VERSUS FREQUENCY TOTAL HARMONIC DISTORTION (%)... V = CC = V V AAV V = = VV O(rms) O(rms) =6V =6V T amb T amb = = +2 C +2 C... k k k k k 822.EPS 6/9

7 TL82 TL82A TL82B PARAMETER MEASUREMENT INFORMATION Figure : Voltage Follower Figure 2 : Gainof Inverting Amplifier k Ω /2 TL82 e o e I k Ω /2 TL82 e o e I C L = pf R = 2kΩ L R L C L = pf 822.EPS 8222.EPS TYPICAL APPLICATION KHz QUADRUPLE OSCILLATOR N 8 8k Ω * V 8pF 8pF k Ω 88.k Ω /2 TL82 8pF 6sinωt 88.k Ω /2 TL82 k Ω 6 cos ω t 88.k Ω N 8 8k Ω * +V * These resistor values may be adjusted for a symmetrical output 8223.EPS 7/9

8 a I TL82 TL82A TL82B PACKAGE MECHANICAL DATA 8 PINS PLASTIC DIP e L b B B e E Z e3 Z D 8 F A b PMDIP8.EPS Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A a..2 B b b D.92.3 E e 2.. e e F i.8.2 L Z.2.6 DIP8.TBL 8/9

9 F TL82 TL82A TL82B PACKAGE MECHANICAL DATA 8 PINS PLASTIC MICROPACKAGE (SO) L C c a2 A a3 b e s a b e3 E D M 8 PMSO8.EPS Dimensions Millimeters Inches Min. Typ. Max. Min. Typ. Max. A.7.69 a..2.. a2.6.6 a b b C c o (typ.) D E e.27. e F L M.6.2 S 8 o (max.) SO8.TBL Information furnished is believed to be accurate and reliable. However, SGSTHOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGSTHOMSON Microelectronics. Specifications mentioned in this publicationare subject to change without notice. This publication supersedes and replaces all information previously supplied. SGSTHOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGSTHOMSON Microelectronics. 99 SGSTHOMSON Microelectronics All Rights Reserved SGSTHOMSON Microelectronics GROUP OF COMPANIES Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. ORDER CODE : 9/9